1. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE
- Author
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Y. El Gmili, M. Abid, David Troadec, Konstantinos Pantzas, Simon Gautier, Frédéric Genty, Joel Jacquet, Paul L. Voss, S. Suresh, Tarik Moudakir, Abdallah Ougazzaden, Gilles Patriarche, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL) more...
- Subjects
010302 applied physics ,Materials science ,business.industry ,High reflectivity ,Phase (waves) ,Algan gan ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Epitaxy ,01 natural sciences ,Reflectivity ,Organic vapor ,Inorganic Chemistry ,0103 physical sciences ,Materials Chemistry ,Optoelectronics ,Wafer ,Metalorganic vapour phase epitaxy ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack generation and achieve high reflectivity with an optimum number of periods a simple approach has been investigated. Using this approach, a coherently strained 20-pair Al 0.27 Ga 0.73 N/GaN (42 nm/36 nm) DBR has been designed and grown. No cracks were observed over 2” wafer. Around 90% reflectivity at 384 nm and a stop-bandwidth of 18 nm was obtained by having good crystalline quality and abrupt and flat interfaces. more...
- Published
- 2013
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