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1. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

Author: Y. El Gmili, M. Abid, David Troadec, Konstantinos Pantzas, Simon Gautier, Frédéric Genty, Joel Jacquet, Paul L. Voss, S. Suresh, Tarik Moudakir, Abdallah Ougazzaden, Gilles Patriarche, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL) more...
Subjects: 010302 applied physics, Materials science, business.industry, High reflectivity, Phase (waves), Algan gan, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Reflectivity, Organic vapor, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Optoelectronics, Wafer, Metalorganic vapour phase epitaxy, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack generation and achieve high reflectivity with an optimum number of periods a simple approach has been investigated. Using this approach, a coherently strained 20-pair Al 0.27 Ga 0.73 N/GaN (42 nm/36 nm) DBR has been designed and grown. No cracks were observed over 2” wafer. Around 90% reflectivity at 384 nm and a stop-bandwidth of 18 nm was obtained by having good crystalline quality and abrupt and flat interfaces. more...
Published: 2013
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2. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Author: V. E. Sandana, Philippe Bove, Y. El Gmili, Konstantinos Pantzas, Simon Gautier, Manijeh Razeghi, Tarik Moudakir, David Troadec, Gilles Patriarche, Suresh Sundaram, F. Hosseini Teherani, Paul L. Voss, Abdallah Ougazzaden, D. J. Rogers, T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Center for Quantum Devices [Evanston] (CQD), Northwestern University [Evanston], Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL) more...
Subjects: 010302 applied physics, Soda-lime glass, Materials science, business.industry, Wafer bonding, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Sapphire, Optoelectronics, Wafer, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure
Abstract: GaN thin films were grown on ZnO/c-Al 2 O 3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N 2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates after chemical lift-off from the sapphire substrates. X-Ray Diffraction, Scanning Electron Microscopy and Transmission Electron Microscopy confirmed the bonding of crack-free wurtzite GaN films onto a glass substrate with a very good quality of interface, i.e. continuous/uniform adherence and absence of voids or particle inclusions. Using this approach, (In) GaN based devices can be lifted-off expensive single crystal substrates and bonded onto supports with a better cost-performance profile. Moreover, the approach offers the possibility of reclaiming the expensive sapphire substrate so it can be utilized again for growth. more...
Published: 2013
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3. Semibulk InGaN: a Novel Approach for Thick, Single Phase, Epitaxial InGaN Layers Grown by MOVPE

Author: Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Bishop, C., Ahaitouf, A., Moudakir, T., Sundaram, S., Orsal, G., Voss, P.L., Ougazzaden, A., UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL) more...
Subjects: [PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2012

4. Wafer-scale GaN Growth on ZnO Buffered Sapphire and GaN Film Bonding on Glass Substrates

Author: Gautier, S., Moudakir, T., Rogers, D., Teherani, F. H., El Gmili, Y., Pantzas, K., Sundaram, S., Razeghi, M., Ougazzaden, A., T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Center for Quantum Devices [Evanston] (CQD), and Northwestern University [Evanston] more...
Subjects: [PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2012

5. Nondestructive mapping of chemical composition and Structural quality of Group III-Nitride nanowires using submicron beam synchrotron-based X-ray diffraction

Author: Bonanno, P.L., Gautier, S., El Gmili, Y., Moudakir, T., Sirenko, A.A., Kazimirov, A., Cai, Z.-H., Martin, J., Goh, W. H., Martinez, A., Ramdane, A., Le Gratiet, L., Maloufi, N., Assouar, M.B., Ougazzaden, A., T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) more...
Published: 2012

6. Novel approach for chemical lift-off and wafer bonding of InGaN besed devices using sacrificial ZnO template layers

Author: Ougazzaden, A., Rogers, D.J., Teherani, F. H., Gautier, S., Moudakir, T., Razeghi, M., UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), Center for Quantum Devices [Evanston] (CQD), and Northwestern University [Evanston] more...
Subjects: [PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2012

7. Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices

Author: Simon Gautier, Badreddine Assouar, Abdallah Ougazzaden, Tarik Moudakir, Hussein Srour, Jean-Paul Salvestrini, Ali Ahaitouf, T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de physique des milieux ionisés et applications (LPMIA), and Université Henri Poincaré - Nancy 1 (UHP)-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: Materials science, Photodetector, Optical power, Gallium nitride, 02 engineering and technology, medicine.disease_cause, 01 natural sciences, 7. Clean energy, chemistry.chemical_compound, Optics, 0103 physical sciences, medicine, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], business.industry, Nanosecond, 021001 nanoscience & nanotechnology, Cutoff frequency, Semiconductor, chemistry, Optoelectronics, 0210 nano-technology, business, Ultraviolet, Dark current
Abstract: Metal-semiconductor-metal solar blind ultraviolet photodetectors have been fabricated using both BGaN-GaN and BGaN-AlN superlattices as active layers. A high internal gain (up to 3 × 10 4 for optical power in the nW range) is obtained with a highly reduced dark current thanks to the boron incorporation. In the high optical power regime (W range), the time response is in the nanosecond range, which is much smaller than that of GaNand ZnO-based ultraviolet photodetectors. Moreover, the boron incorporation in GaN material allows the tuning of the cutoff wavelength. more...
Published: 2012

8. Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Author: Pantzas, K., Patriarche, G., Orsal, G., Gautier, S., Moudakir, T., Abid, M., Gorge, Vanessa, Djebbour, Zakaria, Voss, P.L., Ougazzaden, A., Laboratoire de Photonique et Nanostructure, CNRS, Route de Nozay, 91460 Marcoussis, France, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), SCM - Equipe Semiconducteurs en Couches Minces, and Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS) more...
Abstract: International audience; In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a stack of distinct InGaN layers. The driving mechanism is shown to be lateral fluctuations of the indium composition, that arise to accommodate the increasing strain energy of the InGaN layer. Three distinct stages of growth have been identified. First, a homogeneous, 2D InGaN layer forms, pseudomorphically strained on the underlying GaN. Then, at around 30 nm large lateral fluctuations of the indium composition are observed and a second pseudomorphic layer, composed of indium-rich and indium-poor clusters, is formed. Finally induces a 2D/3D transition at 60 nm and a 3D InGaN layer is formed. more...
Published: 2012
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9. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Author: Simon Gautier, Konstantinos Pantzas, Gilles Patriarche, Jeramy Dickerson, Olivia Mauguin, Y. El Gmili, Christian Tanguy, S. Suresh, Ali Ahaitouf, Abdallah Ougazzaden, Tarik Moudakir, T. Rivera, Chris Bishop, Paul L. Voss, Ludovic Largeau, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL), and Université de Lorraine (UL)-CentraleSupélec-Université de Lorraine (UL)-CentraleSupélec more...
Subjects: 010302 applied physics, Diffraction, Photoluminescence, Materials science, business.industry, Cathodoluminescence, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Inorganic Chemistry, 0103 physical sciences, Materials Chemistry, Optoelectronics, Metalorganic vapour phase epitaxy, Single phase, 0210 nano-technology, Absorption (electromagnetic radiation), business, Quantum tunnelling, ComputingMilieux_MISCELLANEOUS
Abstract: In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting ultra-thin GaN interlayers during InGaN growth. Measurements by HAADF-STEM, X-ray diffraction, cathodoluminescence and photoluminescence demonstrate the effective suppression of the three-dimensional sublayer that is shown to spontaneously form in control InGaN epilayers grown without this method. Simulation predicts that tunneling through the GaN barriers is efficient and that carrier transport through this semi-bulk InGaN/GaN structure is similar to that of bulk InGaN. Such structures may be useful for improving the efficiency of InGaN solar cells by allowing thicker, higher quality InGaN absorption layers. more...
Published: 2012
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10. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

Author: Christelle Pareige, Konstantinos Pantzas, G. Orsal, Abdallah Ougazzaden, Tarik Moudakir, Christophe Longeaud, Paul L. Voss, Vanessa Gorge, Simon Gautier, Z. Djebbour, Anne Migan-Dubois, SCM - Equipe Semiconducteurs en Couches Minces, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Georgia Institute of Technology [Lorraine, France]-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Ecole Nationale Supérieure des Arts et Metiers Metz-Université de Franche-Comté (UFC) more...
Subjects: 010302 applied physics, [PHYS]Physics [physics], Materials science, Physics and Astronomy (miscellaneous), Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Crystal, Absorbance, symbols.namesake, Crystallography, chemistry, Phase (matter), 0103 physical sciences, X-ray crystallography, symbols, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, Raman spectroscopy, Indium, ComputingMilieux_MISCELLANEOUS
Abstract: LGEP 2011 ID = 751; International audience; We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorbance, corresponding to contorted bonds, increases with increased In content. Above 10% of In, the presence of another defect, the concentration of which increases with In content, has been correlated with x-ray diffraction and Raman. We suggest that this defect corresponds to nitrogen vacancies, in agreement with a reported model for GaN. more...
Published: 2011
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11. Optimisation et étude de la résistance spécifique des contacts ohmiques sur les hétérostructures BGaN/AlN/GaN pour une application dans les photodétecteurs UV 'Solar Blind'

Author: Srour, H., Salvestrini, Jean-Paul, Assouar, B., Ahaitouf, A., Orsal, G., Gautier, S., Ougazzaden, A., Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Signaux Systèmes et Composants, Sidi Mohammed Ben Abdellah University, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), and Kauffmann, Thomas more...
Subjects: [PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS, [PHYS] Physics [physics]
Abstract: International audience
Published: 2011

12. B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

Author: Gautier, S., Abid, M., Moudakir, T., Orsal, G., Ravindran, V., Naciri, O., Migan-Dubois, A., Djebbour, Z., Troadec, D., Soltani, A., Patriarche, G., Ougazzaden, A., T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire de Physique des Milieux Denses (LPMD), Université Paul Verlaine - Metz (UPVM), Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Photonique et Nanostructure, CNRS, Route de Nozay, 91460 Marcoussis, France, Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: [PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2011

13. Accurate surface potential determination in Schottky diodes by use of correlated current and capacitance voltage measurements. Application to n-InP

Author: Ali Ahaitouf, Abdelaziz Ahaitouf, Hussein Srour, Jean Paul Salvestrini, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), T1, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL) more...
Subjects: Materials science, Schottky barrier, Analytical chemistry, Thermionic emission, 02 engineering and technology, 01 natural sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Equivalent series resistance, business.industry, Schottky diode, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Semiconductor, chemistry, Indium phosphide, Optoelectronics, Current (fluid), 0210 nano-technology, business, Voltage
Abstract: Based on current voltage (I—Vg) and capacitance voltage (C—Vg) measurements, a reliable procedure is proposed to determine the effective surface potential Vd(Vg) in Schottky diodes. In the framework of thermionic emission, our analysis includes both the effect of the series resistance and the ideality factor, even voltage dependent. This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C—Vg measurements. The study clearly shows that the depletion width and the flat band barrier height deduced from C—Vg, which are important parameters directly related to the surface potential in the semiconductor, should be estimated within our approach to obtain more reliable information. more...
Published: 2011
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14. MOVPE growth of BInGaN quaternary alloys and characterization of B content

Author: Gautier, S., Orsal, G., Moudakir, T., Maloufi, N., Jomard, F., Alnot, M., Djebbour, Z., Abid, M., Voss, P., Ougazzaden, A., T1, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS)-Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Groupe d'Etude de la Matière Condensée (GEMAC), and Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: [SPI]Engineering Sciences [physics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2010
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15. A sensor fusion framework for wearable sensor suites

Author: Chahine, Georges, Vaidis, Maxime, Pomerleau, François, Pradalier, Cédric, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Institute of Technology [Atlanta], and Georgia Institute of Technology [Lorraine, France] more...
Subjects: [SPI]Engineering Sciences [physics], ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION
Abstract: International audience; We present a generalized mapping framework that can withstand the challenges incurred by working in unstructured outdoor environments, such as a snowy forest. The proposed method takes advantage of a sensor fusion scheme, where sensors such as cameras and lidars are used in order to reconstruct the surrounding natural environment. Although mapping techniques such as SLAM and ICP cannot themselves properly handle the complexity of natural scenes, they do have the potential to contribute to the global solution in a proposed sensor fusion scheme, based on a factor graph architecture. In this paper, we propose an innovative map registration scheme for visual maps, and show how it can improve the reconstruction quality after data fusion. We also analyze the behavior and sensitivity of factor graphs to uncertainties, by comparing the residual error with different parameter combinations such as variances, using an exhaustive grid search with ground truth comparison. Finally, we suggest an ICP-inferred loop closure, capable of compensating position and attitude drift. The experiments are carried out by recording in a snowy forest using a wearable sensor suite. In the experiments, ground truth was acquired using a millimeter-accurate total station. The proposed framework is shown to be robust and likewise capable of providing estimates that are otherwise unattainable using classic techniques, such as visual SLAM and ICP for lasers. Finally, a visible improvement in the map reconstruction quality is shown, and the proposed framework achieves a translation error of 0.36 meters. more...
Published: 2021

16. Design and manufacturing of a multi-zone phase-shifting coronagraph mask for extremely large telescopes

Author: Carole Gouvret, M. Belhadi, Olivier Preis, L. Abe, A. Caillat, S. Gautier, Justin Knight, T. Behaghel, Mamadou N'Diaye, Kjetil Dohlen, Mathilde Beaulieu, S. Tisserand, Olivier Guyon, Arthur Vigan, J. M. Le Duigou, Patrice Martinez, Alain Spang, V. Sauget, K. Barjot, A. Marcotto, J. Dejonghe, Joseph Louis LAGRANGE (LAGRANGE), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Institut national des sciences de l'Univers (INSU - CNRS)-Observatoire de la Côte d'Azur, COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA)-Université Côte d'Azur (UCA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Astrophysique de Marseille (LAM), Aix Marseille Université (AMU)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Observatoire de la Côte d'Azur, and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Université Côte d'Azur (UCA)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: Diffraction, Aperture, Context (language use), Astrophysics, 01 natural sciences, law.invention, 010309 optics, Optics, Apodization, law, instrumentation: high angular resolution, 0103 physical sciences, 010303 astronomy & astrophysics, Coronagraph, Wavefront, Physics, business.industry, Astrophysics::Instrumentation and Methods for Astrophysics, techniques: high angular resolution, Astronomy and Astrophysics, Starlight, Cardinal point, Space and Planetary Science, Astrophysics::Earth and Planetary Astrophysics, business, [PHYS.ASTR]Physics [physics]/Astrophysics [astro-ph]
Abstract: Context. High-contrast imaging of exoplanets around nearby stars with future large-segmented apertures requires starlight suppression systems optimized for complex aperture geometries. Future extremely large telescopes (ELTs) equipped with high-contrast instruments operating as close as possible to the diffraction limit will open a bulk of targets in the habitable zone around M-stars. In this context, the phase-induced amplitude apodization complex mask coronagraph (PIAACMC) is a promising concept for high-efficiency coronagraphic imaging at small angular separations with segmented telescopes. Aims. The complex focal plane mask of the PIAACMC is a multi-zone, phase-shifting mask comprised of tiled hexagons that vary in depth. The mask requires micro-fabrication techniques because it is generally made of hundreds micron-scale hexagonal zones with depths ranging over a few microns. We aim to demonstrate that the complex focal plane mask of a PIAACMC with a small inner working angle can be designed and manufactured for segmented apertures. Methods. We report on the numerical design, specifications, manufacturing, and characterization of a PIAACMC complex focal plane mask for the segmented pupil experiment for exoplanet detection facility. Results. Our PIAACMC design offers an inner working angle of 1.3 λ/D and is optimized for a 30% telescope-central-obscuration ratio including six secondary support structures (ESO/ELT design). The fabricated reflective focal plane mask is made of 499 hexagons, and the characteristic size of the mask features is 25 μm, with depths ranging over ±0.4 μm. The mask sag local deviation is measured to an average error of 3 nm and standard deviation of 6 nm rms. The metrological analysis of the mask using interferential microscopy gives access to an in-depth understanding of the component’s optical quality, including a complete mapping of the zone depth distribution zone-depth distribution. The amplitude of the errors in the fabricated mask are within the wavefront control dynamic range. Conclusions. We demonstrate the feasibility of fabricating and characterizing high-quality PIAA complex focal plane masks. more...
Published: 2020
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17. Stability of periodic progressive gravity wave solutions of the Whitham equation in the presence of vorticity

Author: John D. Carter, Henrik Kalisch, C. Kharif, Malek Abid, Institut de Recherche sur les Phénomènes Hors Equilibre (IRPHE), Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), and University of Bergen (UiB) more...
Subjects: Physics, Whitham equation, General Physics and Astronomy, Mechanics, Vorticity, Critical value, 01 natural sciences, 010305 fluids & plasmas, Physics::Fluid Dynamics, Nonlinear system, Wavelength, Modulational instability, 0103 physical sciences, Wavenumber, Gravity wave, [PHYS.MECA.MEFL]Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], 010306 general physics, ComputingMilieux_MISCELLANEOUS
Abstract: International audience; The modulational instability of two-dimensional nonlinear traveling-wave solutions of the Whitham equation in the presence of constant vorticity is considered. It is shown that vorticity has a significant effect on the growth rate of the perturbations and on the range of unstable wavenumbers. Waves with kh greater than a critical value, where k is the wavenumber of the solution and h is the fluid depth, are modulationally unstable. This critical value decreases as the vorticity increases. Additionally, it is found that waves with large enough amplitude are always unstable, regardless of wavelength, fluid depth, and strength of vorticity. Furthermore, these new results are in qualitative agreement with those obtained by considering fully nonlinear solutions of the water-wave equations. more...
Published: 2020
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18. Transverse instability of gravity–capillary solitary waves on deep water in the presence of constant vorticity

Author: H. C. Hsu, Y. Y. Chen, Malek Abid, C. Kharif, Institut de Recherche sur les Phénomènes Hors Equilibre (IRPHE), Aix Marseille Université (AMU)-École Centrale de Marseille (ECM)-Centre National de la Recherche Scientifique (CNRS), National Sun Yat-Sen University (NSYSU), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Ecole Supérieure de Mécanique, and Université de la Méditerranée - Aix-Marseille 2 more...
Subjects: Capillary wave, 01 natural sciences, Instability, 010305 fluids & plasmas, Physics::Fluid Dynamics, 0103 physical sciences, Growth rate, [PHYS.MECA.MEFL]Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], gravity-capillary solitary waves, 010306 general physics, transverse instability, Nonlinear Sciences::Pattern Formation and Solitons, Bifurcation, ComputingMilieux_MISCELLANEOUS, vorticity, Physics, NLS equation, [PHYS.MECA.MEFL]Physics [physics]/Mechanics [physics]/Mechanics of the fluids [physics.class-ph], Mechanical Engineering, Mechanics, Vorticity, Condensed Matter Physics, Transverse plane, Mechanics of Materials, Group velocity, Phase velocity
Abstract: International audience; The bifurcation of two-dimensional gravity-capillary waves into solitary waves when the phase velocity and group velocity are nearly equal is investigated in the presence of constant vorticity. We found that gravity-capillary solitary waves with decaying oscillatory tails exist in deep water in the presence of vorticity. Furthermore we found that the presence of vorticity influences strongly (i) the solitary wave properties and (ii) the growth rate of unstable transverse perturbations. The growth rate and bandwidth instability are given numerically and analytically as a function of the vorticity. more...
Published: 2019
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19. A nonlinear Schr\'odinger equation for gravity-capillary water waves on arbitrary depth with constant vorticity: Part I

Author: Hsu, H. -C., Kharif, C., Abid, M., Chen, Y. -Y., Ecole Supérieure de Mécanique, Université de la Méditerranée - Aix-Marseille 2, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), and Abid, Malek more...
Subjects: NLS equation, Physics::Fluid Dynamics, modulational instability, surface tension, Condensed Matter::Superconductivity, Fluid Dynamics (physics.flu-dyn), FOS: Physical sciences, [PHYS.MECA.MEFL] Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], [PHYS.MECA.MEFL]Physics [physics]/Mechanics [physics]/Fluid mechanics [physics.class-ph], Physics - Fluid Dynamics, vorticity
Abstract: A nonlinear Schrödinger equation for the envelope of two-dimensional gravity-capillary waves propagating at the free surface of a vertically sheared current of constant vorticity is derived. In this paper we extend to gravity-capillary wave trains the results of Thomas et al. (2012) and complete the stability analysis and stability diagram of Djordjevic & Redekopp (1977) in the presence of vorticity. Vorticity effect on the modulational instability of weakly nonlinear gravity-capillary wave packets is investigated. It is shown that the vorticity modifies significantly the modulational instability of gravity-capillary wave trains, namely the growth rate and instability bandwidth. It is found that the rate of growth of modulational instability of short gravity waves influenced by surface tension behaves like pure gravity waves: (i) in infinite depth, the growth rate is reduced in the presence of positive vorticity and amplified in the presence of negative vorticity, (ii) in finite depth, it is reduced when the vorticity is positive and amplified and finally reduced when the vorticity is negative. The combined effect of vorticity and surface tension is to increase the rate of growth of modulational instability of short gravity waves influenced by surface tension, namely when the vorticity is negative. The rate of growth of modulational instability of capillary waves is amplified by negative vorticity and attenuated by positive vorticity. Stability diagrams are plotted and it is shown that they are significantly modified by the introduction of the vorticity. more...
Published: 2018

20. Synthesis and characterization of InN nanocrystals on glass substrate by plasma assisted reactive evaporation

Author: Boon Tong Goh, V. Ganesh, Saadah Abdul Rahman, K. M. Hakim, Mahdi Alizadeh, Ahmad Shuhaimi, S. Sundaram, Eindhoven University of Technology [Eindhoven] (TU/e), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: Diffraction, Renewable energy, Photoluminescence, Materials science, Nanotechnology, 02 engineering and technology, Substrate (electronics), 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, Hall effect, 0103 physical sciences, Energy dispersive X-ray spectroscopy, 010302 applied physics, Microscopy, Raman analysis, business.industry, 021001 nanoscience & nanotechnology, Evaporation (deposition), Nanocrystals, X-ray diffraction, Faceting, Nanocrystal, Optoelectronics, Glass, 0210 nano-technology, business, Stoichiometry
Abstract: International audience; InN nanocrystals were grown on glass substrate by plasma assisted reactive evaporation technique and the quality was compared with InN on Si (111) substrate. Single phase InN was confirmed by X-ray diffraction and micro Raman analysis on both the substrates. Agglomerated and Hexagonal faceting nanocrystals observed by field emission scanning electron microscopy. Energy dispersive X-ray analysis shows InN nanocrystals are nearly stochiometric. Photoluminescence reveals a broad emission near bandedge at 2 .04 eV and defect band at 1.07 eV. The Hall measurement on both the substrates reveals high electron carrier concentration. These encouraging results obtained suggested that high quality single crystalline InN can be obtained on glass substrate further optimizing the growth parameters. This novel growth of InN nanocrystals on glass substrate is an important step towards the development of monolithic, high efficiency low-cost InGaN-based renewable energy sources. more...
Published: 2017
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21. Towards an Efficient CPU-GPU Code Hybridization: a Simple Guideline for Code Optimizations on Modern Architecture with OpenACC and CUDA

Author: Oteski, Ludomir, Colin de Verdiere, Guillaume, Contassot-Vivier, Sylvain, Vialle, Stephane, Ryan, Juliette, Vialle, Stéphane, ONERA - The French Aerospace Lab [Palaiseau], ONERA-Université Paris Saclay (COmUE), DAM Île-de-France (DAM/DIF), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université de Lorraine (UL), SIMulating and Building IOT (SIMBIOT), Department of Networks, Systems and Services (LORIA - NSS), Laboratoire Lorrain de Recherche en Informatique et ses Applications (LORIA), Centre National de la Recherche Scientifique (CNRS)-Université de Lorraine (UL)-Institut National de Recherche en Informatique et en Automatique (Inria)-Centre National de la Recherche Scientifique (CNRS)-Université de Lorraine (UL)-Institut National de Recherche en Informatique et en Automatique (Inria)-Laboratoire Lorrain de Recherche en Informatique et ses Applications (LORIA), Centre National de la Recherche Scientifique (CNRS)-Université de Lorraine (UL)-Institut National de Recherche en Informatique et en Automatique (Inria)-Centre National de la Recherche Scientifique (CNRS)-Université de Lorraine (UL)-Institut National de Recherche en Informatique et en Automatique (Inria), Université Paris-Saclay, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Systèmes parallèles (LRI) (ParSys - LRI), Laboratoire de Recherche en Informatique (LRI), CentraleSupélec-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut National de Recherche en Informatique et en Automatique (Inria)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche en Informatique et en Automatique (Inria)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)-Laboratoire Lorrain de Recherche en Informatique et ses Applications (LORIA), Institut National de Recherche en Informatique et en Automatique (Inria)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche en Informatique et en Automatique (Inria)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: ACM: D.: Software/D.1: PROGRAMMING TECHNIQUES, ACM: D.: Software/D.1: PROGRAMMING TECHNIQUES/D.1.3: Concurrent Programming/D.1.3.0: Distributed programming, [INFO.INFO-DC] Computer Science [cs]/Distributed, Parallel, and Cluster Computing [cs.DC], ACM: D.: Software, ACM: D.: Software/D.1: PROGRAMMING TECHNIQUES/D.1.3: Concurrent Programming/D.1.3.1: Parallel programming, [INFO.INFO-DC]Computer Science [cs]/Distributed, Parallel, and Cluster Computing [cs.DC], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2017

22. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

Author: Suresh Sundaram, Renaud Puybaret, Konstantinos Pantzas, P. L. Bonanno, Jean-Paul Salvestrini, Xiaohang Li, Cédric Pradalier, Y. El Gmili, Paul L. Voss, Abdallah Ougazzaden, Gilles Patriarche, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL) more...
Subjects: Materials science, Nanostructure, Silicon, Nucleation, chemistry.chemical_element, Bioengineering, Nanotechnology, 02 engineering and technology, 01 natural sciences, 0103 physical sciences, General Materials Science, [INFO]Computer Science [cs], Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, Boron, 010302 applied physics, Mechanical Engineering, General Chemistry, 021001 nanoscience & nanotechnology, Template, chemistry, Mechanics of Materials, Material quality, 0210 nano-technology, Single crystal
Abstract: International audience; We report nano-selective area growth (NSAG) of BGaN by MOCVD on AlN/Si(111) and GaN templates resulting in 150 nm single crystalline nanopyramids. This is in contrast to unmasked or micro-selective area growth, which results in a multi-crystalline structure on both substrates. Various characterization techniques were used to evaluate NSAG as a viable technique to improve BGaN material quality on AlN/Si(111) using results of GaN NSAG and unmasked BGaN growth for comparison. Evaluation of BGaN nanopyramid quality, shape and size uniformity revealed that the growth mechanism is the same on both the templates. Further STEM analysis of BGaN nanopyramids on AlN/Si (111) templates confirmed that these are single-crystalline structures without any dislocations, likely due to single nucleation occurring in the 80 nm mask opening. CL results correspond to boron content between 1.7% and 2.0% in the nanopyramids. We conclude that NSAG is promising for growth of high-quality BGaN nanostructures and complex nano-heterostructures, especially for low-cost silicon substrates. more...
Published: 2016
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23. Nanoselective area growth of high quality thick InGaN/GaN on sacrificial ZnO templates

Author: Puybaret, Renaud, Sundaram, Suresh, Li, Xin, El Gmili, Youssef, Pantzas, Konstantinos, Troadec, David, Patriarche, Gilles, Rogers, David, Teherani, Ferechteh Hosseini, Sandana, Eric Vinod, Bove, Philippe, Voss, Paul L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Nanovation SARL, Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012), Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Georgia Institute of Technology [Lorraine, France]-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Ecole Nationale Supérieure des Arts et Metiers Metz-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Salvestrini, Jean Paul, Production renouvelable et gestion de l’électricité - Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium - - NOVAGAINS2012 - ANR-12-PRGE-0014 - PROGELEC - VALID, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2015

24. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

Author: Suresh, Sundaram, Puybaret, Renaud, Li, Xin, El Gmili, Youssef, Streque, Jérémy, Pantzas, Konstantinos, Orsal, Gaelle, Patriarche, Gilles, L. Voss, P., Salvestrini, Jean-Paul, Ougazzaden, Abdallah, Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2015
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25. Simulation d’une cellule solaire à base d’InGaN : Structure dite Semibulk

Author: Elhuni, W., Mignan-Dubois, A., Djebbour, Z., Sundaram, S., Pantzas, K., Salvestrini, Jean-Paul, Voss, P.L., Ougazzaden, A., Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Leblanc, Thierry, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), and Kauffmann, Thomas more...
Subjects: [PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS, [PHYS] Physics [physics]
Abstract: International audience
Published: 2014

26. GaN thin films on z‐ and x ‐cut LiNbO 3 substrates by MOVPE

Author: Simon Gautier, G. Orsal, Andrei Sirenko, T. Aggerstam, Abdallah Ougazzaden, Jean-Paul Salvestrini, Tarik Moudakir, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: 010302 applied physics, Diffraction, Materials science, business.industry, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, business
Abstract: International audience; We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thick- ness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coin- cides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the re- sidual compressive strain determined with respect to a free- standing GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively. more...
Published: 2008
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27. Multilayered growth approach of high indium content InGaN layers for high efficiency photovoltaics

Author: Salvestrini, J.P., Orsal, G., El Gmili, Y., Moudakir, T., Sundaram, S., Ahaitouf, A., Pantzas, K., Patriarche, G., Ougazzaden, A., Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), Université de Lorraine (UL)-CentraleSupélec, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Salvestrini, Jean Paul, and CentraleSupélec-Université de Lorraine (UL) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2013

28. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study

Author: El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaran, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A., UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012), and ANR-08-HABI-0020,NewPVonGlass,Nitrures iii-v deposes sur vErre pour un Watt PhotoVOltaique iNteGre a L'hAbitat baS cout et treS haut rendement(2008) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2013

29. Characteristics of the surface microstructures in thick InGaN layers on GaN

Author: David Troadec, G. Orsal, Abdallah Ougazzaden, Ali Ahaitouf, Tarik Moudakir, Simon Gautier, Gilles Patriarche, Y. El Gmili, Jean-Paul Salvestrini, Konstantinos Pantzas, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), ANR-12-PRGE-0014,NOVAGAINS,Nouvelles cellules photovoltaïques tandem à base de nitrures d'indium et de gallium sur oxyde de zinc sur silicium(2012), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC) more...
Subjects: 010302 applied physics, X-ray spectroscopy, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Scanning electron microscope, business.industry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Microstructure, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, X-ray crystallography, Optoelectronics, 0210 nano-technology, business, Luminescence, Layer (electronics), Indium, Visible spectrum
Abstract: International audience; This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM and EDX are used to characterize such defects. Furthermore, hyperspectral mapping, spot mode and depth-resolved CL measurements provided useful informations on the optical emission properties and microstructure. The main characteristic of Ic1 luminescence peak is a decrease in intensity and no obvious shift in the CL peak position when going from the outside to the middle of such defect. More interesting was Ic2 which is shown to be local 3D top surface In-rich InGaN domains embedded in an homogeneous InGaN matrix. In fact, this study pointed out that close to the interface GaN/InGaN, it exists a 30 nm thick fully strained InGaN layer with constant indium incorporation. As the growth proceeds spatial fluctuation of the In content is observed and local In-rich 3D domains are shown to emerge systematically around threading dislocations terminations. more...
Published: 2013
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30. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

Author: Z. Djebbour, Simon Gautier, Konstantinos Pantzas, Anne Migan-Dubois, Tarik Moudakir, S. Suresh, Abdallah Ougazzaden, V. Gorge, Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL)-CentraleSupélec, UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: Materials science, Gaussian, 02 engineering and technology, Classification of discontinuities, 01 natural sciences, 7. Clean energy, Standard deviation, law.invention, symbols.namesake, Position (vector), law, 0103 physical sciences, Solar cell, General Materials Science, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], InGaN, business.industry, Graded bandgap, Mechanical Engineering, Photovoltaic system, Modeling, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Mechanics of Materials, symbols, Optoelectronics, Defect, 0210 nano-technology, business, Layer (electronics), Voltage
Abstract: International audience; In this paper, we have used simulations to evaluate the impact of the distribution of electrically active defects on the photovoltaic performances of InGaN-based solar cell. The simulations were carried out using Silvaco's ATLAS software. We have modeled a P-GaN/Grad-InGaN/i-In0.53Ga0.47N/Grad-InGaN/N-ZnO where Grad-InGaN corresponds to an InGaN layer with a graded composition. This layer is inserted to eliminate the band discontinuities at the interface between InGaN and the GaN and ZnO layers. The defects were modeled through the introduction of band tails and a Gaussian distribution of defects in i-InGaN material. We have evaluated the influence of band tail widths as well as the parameters of the Gaussian distribution (i.e. defect density, mean position and standard deviation) on the short-circuit current, the open-circuit voltage and the fill-factor (efficiency) of the solar cell. These results have allowed us to identify key structural parameters useful for the optimization of InGaN solar cells, as well as to give realistic estimates of the performances of such cells. more...
Published: 2013
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31. 1.5-μm DFB lasers with new current-induced gain gratings

Author: A. Ougazzaden, M. Filoche, D. Robein, D. Mathoorasing, C. Kazmierski, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière condensée (LPMC), and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: Physics::Optics, 02 engineering and technology, [SDV.MHEP.PSR]Life Sciences [q-bio]/Human health and pathology/Pulmonology and respiratory tract, 01 natural sciences, Optical coupling, Semiconductor laser theory, law.invention, 020210 optoelectronics & photonics, Optics, Carrier modulation, law, Etching, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [PHYS.COND.CM-DS-NN]Physics [physics]/Condensed Matter [cond-mat]/Disordered Systems and Neural Networks [cond-mat.dis-nn], Physics::Atomic Physics, Electrical and Electronic Engineering, Diffraction grating, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Physics, business.industry, Laser, Atomic and Molecular Physics, and Optics, Coupling length, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Current (fluid), business, [PHYS.COND.CM-SCM]Physics [physics]/Condensed Matter [cond-mat]/Soft Condensed Matter [cond-mat.soft]
Abstract: We introduce a new concept for gratings, based on a spatial carrier modulation, induced by current for optoelectronic devices. The concept is experimentally tested on gain coupled lasers, showing predicted features as high-power, low-linewidth, and length-independent coupling length product. > more...
Published: 1995
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32. DLTS investigations of carrier traps and interface states in large internal gain UV photodetectors based on BGaN wide band gap semiconductor

Author: Ahaitouf, A., Amor, S., Srour, H., Ougazzaden, A., Salvestrini, Jean-Paul, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), and Salvestrini, Jean Paul more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2012

33. Electrical and optical characterizations of BGaN UV photodetectors

Author: Amor, S., Ahaitouf, A., Srour, H., Es-Sbai, N., Ougazzaden, A., Salvestrini, J.P., UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), and Salvestrini, Jean Paul more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Published: 2012

34. Amélioration des propriétés de transport dans les transistors HEMT composés de semi-conducteurs borés à larges bande interdite (III-B)-N

Author: Ougazzaden, A., Poisson, M.A., Ravindran, V., Soltani, A., De Jaeger, J.C., UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS) more...
Abstract: n° de priorité : FR20110001167 20110414 ; également publié en tant que : WO2012140271 (A1) 2012-10-18 ; FR2974242 (B1) 2013-09-27
Published: 2012

35. A study of BGaN back-barriers for AlGaN/GaN HEMTs

Author: Paul L. Voss, Vinod Ravindran, Abdallah Ougazzaden, Tarik Moudakir, Jeramy Dickerson, Simon Gautier, UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: 010302 applied physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, business.industry, Transistor, Algan gan, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Polarization (waves), 01 natural sciences, Buffer (optical fiber), Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Fermi gas, Instrumentation, ComputingMilieux_MISCELLANEOUS
Abstract: We study the use of a BGaN back-barrier layer in the GaN buffer of Al y Ga1 −y N/GaN highelectron mobility transistors to improve confinement of carriers in the 2D electron gas region. Unlike InGaN back-barrier designs, whose polarization-induced sheet charges form an electrostatic barrier at the backbarrier/ buffer interface, BGaN back-barrier designs create an electrostatic barrier at the channel/backbarrier interface. This can result in carrier confinement to sub-15 nm thickness, even when the channel is 30 nm wide. Although polarization sheet charges due to the BGaN back-barrier form a secondary well at the back-barrier/buffer interface, increasing the thickness of the back-barrier may move the secondary well so that it no longer interacts with the primary channel. more...
Published: 2012
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36. Optical Characterization Of Thick InGaN Layers For Solar Cell Applications

Author: El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A., Salvestrini, Jean Paul, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), Université de Lorraine (UL)-CentraleSupélec, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2012

37. Ohmic and Schottky contacts for BGaN based UV photo- and α,β detectors

Author: Srour, H., Salvestrini, J.P., Assouar, B., Ould Saad Hamady, Sidi, Ahaitouf, A., Gautier, S., Moudakir, T., Ougazzaden, A., Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des milieux ionisés et applications (LPMIA), and Université Henri Poincaré - Nancy 1 (UHP)-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2011

38. Exploitation of EDF scheduling in Wireless Sensor Networks

Author: Cheour, R., Bilavarn, Sébastien, Abid, M., Laboratoire d'Electronique, Antennes et Télécommunications (LEAT), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: [INFO.INFO-ES]Computer Science [cs]/Embedded Systems, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2011

39. Investigation of the optical properties of diluted boron-based alloys B(Al,Ga)N and their applications on innovative UV Distributed Bragg Reflectors

Author: Abid, M., Moudakir, T., Gautier, S., Orsal, G., En Naciri, A., Djebbour, Z., Ryou, J.H., Patriarche, G., Kim, H.J., Lochner, Z., Pantzas, K., Alamarguy, D., Jomard, F., Salvestrini, J.P., D. Dupuis, R., Ougazzaden, A., Salvestrini, Jean Paul, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Photonique et Nanostructure, CNRS, Route de Nozay, 91460 Marcoussis, France, Groupe d'Etude de la Matière Condensée (GEMAC), and Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2011

40. Investigation of microstructural, optical and electrical properties of BGaN materials grown by MOVPE

Author: Abid, M., Gautier, S., Moudakir, T., Orsal, G., Ravindran, V., O. S. Hamady, S., Naciri, O., Migan-Dubois, A., Djebbour, Z., Troadec, D., Patriarche, G., Ougazzaden, A., UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de Photonique et Nanostructure, CNRS, Route de Nozay, 91460 Marcoussis, France, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Published: 2010

41. EDF scheduler technique for wireless sensor networks: case study

Author: Cheour, R., Bilavarn, Sébastien, Abid, M., Laboratoire d'Electronique, Antennes et Télécommunications (LEAT), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2010

42. Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Author: V. E. Sandana, Damien McGrouther, D. J. Rogers, Simon Gautier, François Jomard, Michael Molinari, Michel Troyon, Paul L. Voss, J. N. Chapman, G. Orsal, M. Abid, Tarik Moudakir, F. Hosseini Teherani, Abdallah Ougazzaden, Georgia Tech Lorraine [Metz], Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Nanovation SARL, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Microscopies et d'Etude de Nanostructures (lmen), Université de Reims Champagne-Ardenne (URCA), Department of Physics and Astronomy [Glasgow], UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Nanovation SARL (Nanovation), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), and Salvestrini, Jean Paul more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Indium nitride, Analytical chemistry, Cathodoluminescence, Gallium nitride, 02 engineering and technology, 010402 general chemistry, Epitaxy, Indium gallium nitride, 01 natural sciences, chemistry.chemical_compound, lift-off, Metalorganic vapour phase epitaxy, pulsed laser deposition, ComputingMilieux_MISCELLANEOUS, Wurtzite crystal structure, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], InGaN, Si substrate, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Secondary ion mass spectrometry, chemistry, metalorganic vapour phase epitaxy, ZnO, 0210 nano-technology
Abstract: International audience; InGaN/GaN layers were grown on ZnO-buffered Si (111) substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N2 as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate. more...
Published: 2010
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43. Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application

Author: Abid, M., Moudakir, T., Djebbour, Z., Orsal, G., Gautier, S., En Naciri, A., Migan-Dubois, A., Ougazzaden, A., Salvestrini, Jean Paul, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), and CentraleSupélec-Université de Lorraine (UL) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2010
Full Text: View/download PDF

44. Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Author: Nabila Maloufi, Konstantinos Pantzas, Ian T. Ferguson, M. Abid, G. Orsal, Simon Gautier, Andrei Sirenko, Paul L. Voss, M. Alnot, Abdallah Ougazzaden, Tarik Moudakir, F. Jomard, Zakaria Djebbour, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Georgia Institute of Technology [Lorraine, France]-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Ecole Nationale Supérieure des Arts et Metiers Metz-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire de génie électrique de Paris (LGEP), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'étude des textures et application aux matériaux (LETAM), Université Paul Verlaine - Metz (UPVM)-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des matériaux (LPM), and Université Henri Poincaré - Nancy 1 (UHP)-Institut National Polytechnique de Lorraine (INPL)-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: Indium nitride, Analytical chemistry, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, Epitaxy, 01 natural sciences, Inorganic Chemistry, chemistry.chemical_compound, X-ray photoelectron spectroscopy, 0103 physical sciences, Materials Chemistry, BInGaN, Metalorganic vapour phase epitaxy, Boron, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], InGaN, ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Metal-organic vapour phase epitaxy, Secondary ion mass spectrometry, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], InformationSystems_MISCELLANEOUS, 0210 nano-technology, Indium
Abstract: LGEP 2010 ID = 608; International audience; BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy (MOVPE). Epitaxial layer composition was determined by secondary ion mass spectroscopy (SIMS), and confirmed by X-ray photoelectron spectroscopy (XPS). Bandgap energies were measured using optical transmission and reflection spectroscopy. We find that boron incorporation in BInGaN reduces the bandgap, causing an effect similar to the increase of indium content in InGaN. However, adding boron has the advantage of decreasing the lattice mismatch with conventional GaN substrates. more...
Published: 2010
Full Text: View/download PDF

45. Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures

Author: Bonanno, P.L., Gautier, S., A. Sirenko, A., H. Cai, Z., Martin, J., H. Goh, W., Martinez, A., Ramdane, A., Le Gratiet, L., Moudakir, T., Maloufi, N., B. Assouar, M., Ougazzaden, A., Salvestrini, Jean Paul, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), Université de Lorraine (UL)-CentraleSupélec, Laboratoire d'étude des textures et application aux matériaux (LETAM), Université Paul Verlaine - Metz (UPVM)-Centre National de la Recherche Scientifique (CNRS), and CentraleSupélec-Université de Lorraine (UL) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2010

46. Deep structural analysis of novel BGaN material layers grown by MOVPE

Author: Simon Gautier, Gilles Patriarche, Konstantinos Pantzas, Tarik Moudakir, Ali Soltani, David Troadec, M. Abid, G. Orsal, Ludovic Largeau, Abdallah Ougazzaden, Olivia Mauguin, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de Photonique et Nanostructure, CNRS, Route de Nozay, 91460 Marcoussis, France, SUPELEC-Campus Metz, Ecole Supérieure d'Electricité - SUPELEC (FRANCE), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Photoluminescence, Materials science, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Inorganic Chemistry, chemistry, 0103 physical sciences, Scanning transmission electron microscopy, Materials Chemistry, Sapphire, Metalorganic vapour phase epitaxy, 0210 nano-technology, Boron, Ternary operation, Group 2 organometallic chemistry, Wurtzite crystal structure
Abstract: International audience; BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX. more...
Published: 2010
Full Text: View/download PDF

47. Demonstration of highly oriented InGaN MOVPE growth on ZnO-buffered silicon template substrate

Author: Orsal, G., Moudakir, T., Gautier, S., Maloufi, N., Rogers, D. J., Hosseini Teherani, F., Voss, P., Ougazzaden, A., Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), Université de Lorraine (UL)-CentraleSupélec, Nanovation SARL, UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Schreiber, Cécile, and CentraleSupélec-Université de Lorraine (UL) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Published: 2009

48. Selective growth of GaN nanostructures on SIC by MOVPE and their strain relaxation study by submicron beam x-ray diffraction

Author: Goh, W. H., Bonanno, P. L., Martin, J., Gautier, S., Maloufi, N., Sirenko, A.A., Kazimirov, A., Cai, Z.-H., Martinez, A., Ramdane, A., Gratiet, L.L., Patriarche, G., Assouar, M. B., Moudakir, T., Ougazzaden, A., Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Cornell University [New York], Laboratoire de physique des milieux ionisés et applications (LPMIA), Université Henri Poincaré - Nancy 1 (UHP)-Centre National de la Recherche Scientifique (CNRS), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL)-CentraleSupélec, and Schreiber, Cécile more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2009

49. Growth and characterisation of new BInGaN quaternary alloys

Author: Orsal, G., Moudakir, T., Maloufi, N., Gautier, S., Jomard, F., Alnot, M., Djebbour, Z., Abid, M., Ferguson, T., Voss, P.L., Ougazzaden, A., Schreiber, Cécile, Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des matériaux (LPM), Université Henri Poincaré - Nancy 1 (UHP)-Institut National Polytechnique de Lorraine (INPL)-Centre National de la Recherche Scientifique (CNRS), UMI GT CNRS, Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC) more...
Subjects: [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Published: 2009

50. MOVPE growth of BGaN as barrier layer for threading dislocations

Author: Maloufi, N., Orsal, G., Gautier, S., Alnot, M., Bouchaour, M., Soltani, A., Ougazzaden, A., Laboratoire d'étude des textures et application aux matériaux (LETAM), Université Paul Verlaine - Metz (UPVM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Laboratoire de physique des matériaux (LPM), Université Henri Poincaré - Nancy 1 (UHP)-Institut National Polytechnique de Lorraine (INPL)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), UMI GT CNRS, and Georgia Institute of Technology [Atlanta]-Centre National de la Recherche Scientifique (CNRS) more...
Subjects: stomatognathic diseases, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Abstract: oral
Published: 2008

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