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1. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

2. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

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3. Semibulk InGaN: a Novel Approach for Thick, Single Phase, Epitaxial InGaN Layers Grown by MOVPE

4. Wafer-scale GaN Growth on ZnO Buffered Sapphire and GaN Film Bonding on Glass Substrates

5. Nondestructive mapping of chemical composition and Structural quality of Group III-Nitride nanowires using submicron beam synchrotron-based X-ray diffraction

6. Novel approach for chemical lift-off and wafer bonding of InGaN besed devices using sacrificial ZnO template layers

7. Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices

8. Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

9. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

10. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

11. Optimisation et étude de la résistance spécifique des contacts ohmiques sur les hétérostructures BGaN/AlN/GaN pour une application dans les photodétecteurs UV 'Solar Blind'

12. B(Al,Ga)N materials capability for advanced optic devices structures in the UV range

13. Accurate surface potential determination in Schottky diodes by use of correlated current and capacitance voltage measurements. Application to n-InP

14. MOVPE growth of BInGaN quaternary alloys and characterization of B content

15. A sensor fusion framework for wearable sensor suites

16. Design and manufacturing of a multi-zone phase-shifting coronagraph mask for extremely large telescopes

17. Stability of periodic progressive gravity wave solutions of the Whitham equation in the presence of vorticity

18. Transverse instability of gravity–capillary solitary waves on deep water in the presence of constant vorticity

19. A nonlinear Schr\'odinger equation for gravity-capillary water waves on arbitrary depth with constant vorticity: Part I

20. Synthesis and characterization of InN nanocrystals on glass substrate by plasma assisted reactive evaporation

21. Towards an Efficient CPU-GPU Code Hybridization: a Simple Guideline for Code Optimizations on Modern Architecture with OpenACC and CUDA

22. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

23. Nanoselective area growth of high quality thick InGaN/GaN on sacrificial ZnO templates

24. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

25. Simulation d’une cellule solaire à base d’InGaN : Structure dite Semibulk

26. GaN thin films on z‐ and x ‐cut LiNbO 3 substrates by MOVPE

27. Multilayered growth approach of high indium content InGaN layers for high efficiency photovoltaics

28. Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study

29. Characteristics of the surface microstructures in thick InGaN layers on GaN

30. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells

31. 1.5-μm DFB lasers with new current-induced gain gratings

32. DLTS investigations of carrier traps and interface states in large internal gain UV photodetectors based on BGaN wide band gap semiconductor

33. Electrical and optical characterizations of BGaN UV photodetectors

34. Amélioration des propriétés de transport dans les transistors HEMT composés de semi-conducteurs borés à larges bande interdite (III-B)-N

35. A study of BGaN back-barriers for AlGaN/GaN HEMTs

36. Optical Characterization Of Thick InGaN Layers For Solar Cell Applications

37. Ohmic and Schottky contacts for BGaN based UV photo- and α,β detectors

38. Exploitation of EDF scheduling in Wireless Sensor Networks

39. Investigation of the optical properties of diluted boron-based alloys B(Al,Ga)N and their applications on innovative UV Distributed Bragg Reflectors

40. Investigation of microstructural, optical and electrical properties of BGaN materials grown by MOVPE

41. EDF scheduler technique for wireless sensor networks: case study

42. Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

43. Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application

44. Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

45. Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures

46. Deep structural analysis of novel BGaN material layers grown by MOVPE

47. Demonstration of highly oriented InGaN MOVPE growth on ZnO-buffered silicon template substrate

48. Selective growth of GaN nanostructures on SIC by MOVPE and their strain relaxation study by submicron beam x-ray diffraction

49. Growth and characterisation of new BInGaN quaternary alloys

50. MOVPE growth of BGaN as barrier layer for threading dislocations