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Leveraging nanoscale field-effect transistors (FETs) in integrated circuits depends heavily on its transfer characteristics and low-frequency noise (LFN) properties. Here, we report the transfer characteristics and LFN in FETs fabricated with molybdenum disulfide (MoS2) with different layer (L) counts. 4L to 6L devices showed highest ION-IOFF ratio (108) whereas LFN was maximum for 1L device with normalized power spectral density (PSD) 1.5 × 10-5 Hz-1. For devices with L≈6, PSD was minimum (2 × 10-8 Hz-1). Further, LFN for single and few layer devices satisfied carrier number fluctuation (CNF) model in both weak and strong accumulation regimes while thicker devices followed Hooge's mobility fluctuation model in the weak accumulation regime and CNF model in strong accumulation regime, respectively. Transfer-characteristics and LFN experimental data are explained with the help of model incorporating Thomas-Fermi charge screening and inter-layer resistance coupling. [ABSTRACT FROM AUTHOR]