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The ability to molecularly engineer luminescent metal-organic frameworks is a powerful tool for the design of better performing rational temperature sensors. Lanthanide based MOF stand out as luminescent temperature sensors due to the high luminescence intensity and sharp emission lines of the lanthanides. The use of two different lanthanide cations incorporated into the same MOF structure is supposed to allow for a rational, that is self-referencing, temperature sensing. Here, we present series of mixed EuxTb(1-x)BTC, which were designed as nanoparticles. The EuxTb(1-x)BTC series shows controllable luminescent properties, which depend on the solvation of the lanthanide. The two MOFs in the series with the lowest Eu content, i.e. Eu0.04Tb0.96BTC and Eu0.02Tb0.98BTC, are suitable candidates for rational temperature sensing in the range between 200 and 270 K and above 300 K.

Structural defects in transition metal dichalcogenide (TMDC) monolayers (ML) play a significant role in determining their (opto)electronic properties, triggering numerous efforts to control defect densities during material growth or by post-growth treatments. Various types of TMDC have been successfully deposited by MOCVD (metal-organic chemical vapor deposition), which is a wafer-scale deposition technique with excellent uniformity and controllability. However, so far there are no findings on the extent to which the incorporation of defects can be controlled by growth parameters during MOCVD processes of TMDC. In this work, we investigate the effect of growth temperature and precursor ratio during MOCVD of tungsten diselenide (WSe2) on the growth of ML domains and their impact on the density of defects. The aim is to find parameter windows that enable the deposition of WSe2 ML with high crystal quality, i.e. a low density of defects. Our findings confirm that the growth temperature has a large influence on the crystal quality of TMDC, significantly stronger than found for the W to Se precursor ratio. Raising the growth temperatures in the range of 688 °C to 791 °C leads to an increase of the number of defects, dominating photoluminescence (PL) at low temperatures (5.6 K). In contrast, an increase of the molar precursor ratio (DiPSe/WCO) from 1000 up to 100 000 leads to less defect-related PL at low temperatures.

Quantum-confined nanostructures of CsPbBr3 with luminescence quantum efficiencies approaching unity have shown tremendous potential for lighting and quantum light applications. In contrast to CsPbBr3 quantum dots, where the fine structure of the emissive exciton state has been intensely discussed, the relationship among lattice orientation, shape anisotropy, and exciton fine structure in lead halide nanoplatelets has not yet been established. In this work, we investigate the fine structure of the bright triplet exciton of individual CsPbBr3 nanoplatelets by polarization-resolved micro- and magnetophotoluminescence spectroscopy at liquid helium temperature and find a large zero-field splitting of up to 2.5 meV. A unique relation between the crystal structure and the photoluminescence emission confirms the existence of two distinct crystal configurations in such nanoplatelets with different alignments of the crystal axes with respect to the nanoplatelet facets. Polarization-resolved experiments eventually allow us to determine the absolute orientation of an individual nanoplatelet on the substrate purely by optical means.

The polarization of photoluminescence emitted from anisotropic nanocrystals directly reflects the symmetry of the eigenstates involved in the recombination process and can thus be considered as a characteristic feature of a nanocrystal. We performed polarization resolved magneto-photoluminescence spectroscopy on single colloidal Mn2+:CdSe/CdS core-shell quantum dots of wurtzite crystal symmetry. At zero magnetic field, a distinct linear polarization pattern is observed, while applying a magnetic field enforces circularly polarized emission with a characteristic saturation value below 100%. These polarization features are shown to act as a specific fingerprint of each individual nanocrystal. A model considering the orientation of the crystal c axis with respect to the optical axis and the magnetic field and taking into account the impact of magnetic doping is introduced and quantitatively explains our findings. We demonstrate that a careful analysis of the polarization state of single nanocrystal emission using the full set of Stokes parameters allows for identification of the complete three-dimensional orientation of the crystal anisotropy axis of an individual nanoobject in lab coordinates.

Journal of materials research 36(9), 1813-1823 (2021). doi:10.1557/s43578-021-00239-w special issue: "Focus section: Multifunctional halide perovskites; Biomedical materials, regenerative medicine and drug delivery; Electronic, photonic and magnetic materials", Published by Springer, Berlin

A promising strategy toward ultrathin, sensitive photodetectors is the combination of a photoactive semiconducting transition-metal dichalcogenide (TMDC) monolayer like MoS

The escalated photocatalytic (PC) efficiency of the visible light absorber Ba-doped BiFe0.95Mn0.05O3 (BFM) nanoparticles (NPs) as compared to BiFeO3 (BFO) NPs is reported for the degradation of the organic pollutants rhodamine B and methyl orange. 1 mol% Ba-doped-BFM NPs degrade both dyes within 60 and 25 minutes under UV + visible illumination, respectively. The Ba and Mn co-doping up to 5 mol% in BFO NPs increases the specific surface area, energy of d–d transitions, and PC efficiency of the BFO NPs. The maximum PC efficiency found in 1 mol% Ba doped BFM NPs is attributed to a cooperative effect of factors like its increased light absorption ability, large surface area, active surface, reduced recombination of charge carriers, and spontaneous polarization to induce charge carrier separation. The 1 mol% Ba and 5 mol% Mn co-incorporation is found to be the optimum dopant concentration for photocatalytic applications. These properties of co-doped BFO NPs can, e.g., be exploited in the field of water splitting.

Most publications on (opto)electronic devices based on 2D materials rely on single monolayers embedded in classical 3D semiconductors, dielectrics and metals. However, heterostructures of different 2D materials can be employed to tailor the performance of the 2D components by reduced defect densities, carrier or exciton transfer processes and improved stability. This translates to additional and unique degrees of freedom for novel device design. The nearly infinite number of potential combinations of 2D layers allows for many fascinating applications. Unlike mechanical stacking, metal-organic vapour phase epitaxy (MOVPE) can potentially provide large-scale highly homogeneous 2D layer stacks with clean and sharp interfaces. Here, we demonstrate the direct successive MOVPE of MoS2/WS2 and WS2/MoS2 heterostructures on 2” sapphire (0001) substrates. Furthermore, the first deposition of large-scale MoS2/graphene and WS2/graphene heterostructures using only MOVPE is presented and the influence of growth time on nucleation of WS2 on graphene is analysed.

Transition metal dichalcogenide (TMDC) monolayers with their direct band gap in the visible to near-infrared spectral range have emerged over the past years as highly promising semiconducting materials for optoelectronic applications. Progress in scalable fabrication methods for TMDCs like metal-organic chemical vapor deposition (MOCVD) and the ambition to exploit specific material properties, such as mechanical flexibility or high transparency, highlight the importance of suitable device concepts and processing techniques. In this work, we make use of the high transparency of TMDC monolayers to fabricate transparent light-emitting devices (LEDs). MOCVD-grown WS2 is embedded as the active material in a scalable vertical device architecture and combined with a silver nanowire (AgNW) network as a transparent top electrode. The AgNW network was deposited onto the device by a spin-coating process, providing contacts with a sheet resistance below 10 Ω sq−1 and a transmittance of nearly 80%. As an electron transport layer we employed a continuous 40 nm thick zinc oxide (ZnO) layer, which was grown by atmospheric pressure spatial atomic layer deposition (AP-SALD), a precise tool for scalable deposition of oxides with defined thickness. With this, LEDs with an average transmittance over 60% in the visible spectral range, emissive areas of several mm2 and a turn-on voltage of around 3 V are obtained.

A Fano resonance, as often observed in scattering, absorption, or transmission experiments, arises from quantum interference between a discrete optical transition and a continuous background. Here, we present a temperature-dependent study on Fano resonances observed in photoluminescence from flakes of the layered semiconductor antiferromagnet chromium thiophosphate (CrPS

OA Förderung 2022 LEDs based on planar InGaN/GaN heterostructures define an important standard for solid-state lighting. However, one drawback is the polarization field of the wurtzite heterostructure impacting both electron–hole overlap and emission energy. Three-dimensional core–shell microrods offer field-free sidewalls, thus improving radiative recombination rates while simultaneously increasing the light-emitting area per substrate size. Despite those promises, microrods have still not replaced planar devices. In this review, we discuss the progress in device processing and analysis of microrod LEDs and emphasize the perspectives related to the 3D device architecture from an applications point of view.

Supported vanadium oxide species are tested for their capability to perform photocatalytic methyl orange degradation in the aqueous phase. Excitation is performed with a frequency-tripled (λ=270 nm) or frequency-doubled (λ=405 nm) Ti:sapphire laser in a newly designed 15 ml photoreactor. Photocatalytic activity in dye degradation is only observed at 270 nm excitation, indicating that larger vanadium oxide structures (V₂O₅ nanoparticles, decavanadates) are either not present in sufficient quantities, or not active in the reaction. Reference experiments exclude pure photodegradation of the dye. It is found that a major part of the supported vanadium oxide species becomes detached from the silica support, and a very small fraction detaches from alumina. Considerations of the aqueous phase chemistry of dissolved vanadate ions allow to identify the formed dissolved species to be predominantly H₂VO₄− ions. These doubly protonated monovanadates are the main active species in the photocatalytic reaction, together with small anchored species on alumina.

Quantum-confined nanostructures of CsPbBr

The lead-free double perovskite Cs2AgBiX6 (X = Br, Cl) has recently demonstrated great potential for applications in solar cells, photodetectors, and X-ray detectors. This material is characterized...

Transition metal dichalcogenides (TMDCs) represent a novel and sustainable material basis for ultrathin optoelectronic devices. Although various approaches toward light-emitting devices, e.g., base...

In this work the photoluminescence (PL) of Co

Advances in chemical synthesis enable the design of nanocrystals with targeted architecture, functionalized by transition metal doping. As a consequence of pronounced exchange interactions between charge carriers and dopants, this class of materials combines optical, electronic and magnetic activity even up to room temperature. Ensemble doping leads to collective spin phenomena like optically and electrically triggered magnetization as well as spin fluctuations, probed down to the level of single quantum dots. We found strong anisotropy effects paving the path towards directed magnetic polaron formation. Incorporation of single magnetic impurities yield unique discoveries like huge zero-field exchange splittings, which allows probing the spin state of an individual atom, or digital magnetic doping in magic size nanocluster.

The escalated photocatalytic (PC) efficiency of the visible light absorber Ba-doped BiFe

Nanocrystals with tailored shapes and compositions have been shown to form ‘superlattice’ arrays analogous to the ionic lattices of perovskite compounds. One such superlattice exhibits a phenomenon called superfluorescence. Superlattice geometry engineered by tailoring constituent nanoparticles.

2D Materials 8(4), 045015 (2021). doi:10.1088/2053-1583/ac186d, Published by IOP Publ., Bristol

CA Bacher In this work the photoluminescence (PL) of CoxFe3-xO4 spinel oxide nanoparticles under pulsed UV laser irradiation (λexc = 270 nm) is investigated for varying Co/Fe ratios (x = 0.4⋯2.5). A broad emission in the green spectral range is observed, exhibiting two maxima at around 506 nm, which is dominant for Fe-rich nanoparticles (x = 0.4, 0.9), and at around 530 nm, that is more pronounced for Co-rich nanoparticles (x > 1.6). As examinations in different atmospheres show that the observed emission reacts sensitively to the presence of water, it is proposed that the emission is mainly caused by OH groups with terminal or bridging metal-O bonds on the CoxFe3-xO4 surface. Raman spectroscopy supports that the emission maximum at 506 nm corresponds to terminal OH groups bound to metal cations on tetrahedral sites (i.e., Fe3+), while the maximum around 530 nm corresponds to terminal OH groups bound to metal cations on octahedral sites (i.e., Co3+). Photoinduced dehydroxylation shows that OH groups can be removed on Fe-rich nanoparticles more easily, leading to a conversion process and the formation of new OH groups with different bonds to the surface. As such behavior is not observed for CoxFe3-xO4 with x > 1.6, we conclude that the OH groups are more stable against dehydroxylation on Co-rich nanoparticles. The higher OH stability is expected to lead to a higher catalytic activity of Co-rich cobalt ferrites in the electrochemical generation of oxygen.

The 2D transition metal dichalcogenide (TMDC) tungsten disulfide (WS2) has attracted great interest due to its unique properties and prospects for future (opto)electronics. However, compared to molybdenum disulfide (MoS2), the development of a reproducible and scalable deposition process for 2D WS2 has not advanced very far yet. Here, we report on the systematic investigation of 2D WS2 growth on hydrogen (H2)-desorbed sapphire (0001) substrates using a hydrogen sulfide (H2S)-free metal-organic vapor phase epitaxy (MOVPE) process in a commercial AIXTRON planetary hot-wall reactor in 10 × 2” configuration. Tungsten hexacarbonyl (WCO, 99.9 %) and di-tert-butyl sulfide (DTBS, 99.9999 %) were used as MO sources, nitrogen (N2) was selected as carrier gas for the deposition processes (standard growth time 10 h). In an initial study, the impact of growth temperature on nucleation and growth was investigated and an optimal value of 820 °C was found. The influence of the WCO flow on lateral growth was investigated. The aim was to maximize the edge length of triangular crystals as well as the total surface coverage. Extending gradually the growth time up to 20 h at optimized WCO flow conditions yields fully coalesced WS2 samples without parasitic carbon-related Raman peaks and with only sparse bilayer nucleation. After substrate removal, a fully coalesced WS2 film was implemented into a light-emitting device showing intense red electroluminescence (EL).

One of the bottlenecks in the implementation of graphene as a transparent electrode in modern opto-electronic devices is the need for complicated and damaging transfer processes of high-quality graphene sheets onto the desired target substrates. Here, we study the direct, plasma-enhanced chemical vapor deposition (PECVD) growth of graphene on GaN-based light-emitting diodes (LEDs). By replacing the commonly used hydrogen (H2) process gas with nitrogen (N2), we were able to suppress GaN surface decomposition while simultaneously enabling graphene deposition at 4) flow and varying the growth time between 0.5 h and 8 h, the electro-optical properties of the graphene layers could be tuned to sheet resistances as low as ∼1 kΩ/□ with a maximum transparency loss of ∼12%. The resulting high-quality graphene electrodes show an enhanced current spreading effect and an increase of the emission area by a factor of ∼8 in operating LEDs.

The simple device architecture as well as the solution-based processing makes light-emitting electrochemical cells (LECs) a promising device concept for large-area flexible lighting solutions. The lack of deep-blue emitters, which are, at the same time, efficient, bright, and long-term stable, complementary to the wide variety of yellow-orange-emitting LECs, hampers the creation of white LECs. We present a hybrid device concept for the realization of white light emission by combining blue colloidal quantum dots (QDs) and an Ir-based ionic transition-metal complex (iTMC) LEC in a new type of white QD–LEC hybrid device (QLEC). By careful arrangement of the active layers, we yield light emission from both the blue QDs and the yellow iTMC emitter already at voltages below 3 V. The QLEC devices show homogeneous white light emission with high color rendering index (up to 80), luminance levels above 850 cd m–2, and a maximum external quantum efficiency greater than 0.2%.

Magic-sized clusters represent materials with unique properties at the border between molecules and solids and provide important insights into the nanocrystal formation process. However, synthesis, doping, and especially structural characterization become more and more challenging with decreasing cluster size. Herein, we report the successful introduction of Co2+ ions into extremely small-sized CdSe clusters with the intention of using internal ligand field transitions to obtain structural insights. Despite the huge mismatch between the radii of Cd2+ and Co2+ ions (>21%), CdSe clusters can be effectively synthesized with a high Co2+ doping concentration of ∼10%. Optical spectroscopy and mass spectrometry suggest that one or two Co2+ ions are substitutionally embedded into (CdSe)13 clusters, which is known as one of the smallest CdSe clusters. Using magnetic circular dichroism spectroscopy on the intrinsic ligand field transitions between the different 3d orbitals of the transition metal dopants, we demonstrate that the Co2+ dopants are embedded on pseudotetrahedral selenium coordinated sites despite the limited number of atoms in the clusters. A significant shortening of Co-Se bond lengths compared to bulk or nanocrystals is observed, which results in the metastability of Co2+ doping. Our results not only extend the doping chemistry of magic-sized semiconductor nanoclusters, but also suggest an effective method to characterize the local structure of these extremely small-sized clusters.

We study the impact of excitation energy on the photostability of methylammonium lead triiodide (CH3NH3PbI3 or MAPI) perovskite thin films. Light soaking leads to a transient increase of the photoluminescence efficiency at excitation wavelengths longer than 520 nm, whereas light-induced degradation occurs when exciting the films with wavelengths shorter than 520 nm. X-ray diffraction and extinction measurements reveal the light-induced decomposition of CH3NH3PbI3 to lead iodide (PbI2) for the high-energy excitation regime. We propose a model explaining the energy dependence of the photostability that involves the photoexcitation of residual PbI2 species in the perovskite triggering the decomposition of CH3NH3PbI3.

The influence of the main growth parameters on the growth mechanism and film formation processes during metalorganic vapor-phase epitaxy (MOVPE) of two-dimensional MoS2 on sapphire (0001) have been investigated. Deposition was performed using molybdenum hexacarbonyl and di-tert-butyl sulfide as metalorganic precursors in a horizontal hot-wall MOVPE reactor from AIXTRON. The structural properties of the MoS2 films were analyzed by atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. It was found that a substrate prebake step prior to growth reduced the nucleation density of the polycrystalline film. Simultaneously, the size of the MoS2 domains increased and the formation of parasitic carbonaceous film was suppressed. Additionally, the influence of growth parameters such as reactor pressure and surface temperature is discussed. An upper limit for these parameters was found, beyond which strong parasitic deposition or incorporation of carbon into MoS2 took place. This carbon contamination became significant at reactor pressure above 100 hPa and temperature above 900°C.

Electrical spin manipulation remains a central challenge for the realization of diverse spin-based information processing technologies. Motivated by the demonstration of confinement-enhanced sp–d exchange interactions in colloidal diluted magnetic semiconductor (DMS) quantum dots (QDs), such materials are considered promising candidates for future spintronic or spin-photonic applications. Despite intense research into DMS QDs, electrical control of their magnetic and magneto-optical properties remains a daunting goal. Here, we report the first demonstration of electrically induced magnetic polaron formation in any DMS, achieved by embedding Mn2+-doped CdSe/CdS core/shell QDs as the active layer in an electrical light-emitting device. Tracing the electroluminescence from cryogenic to room temperatures reveals an anomalous energy shift that reflects current-induced magnetization of the Mn2+ spin sublattice, that is, excitonic magnetic polaron formation. These electrically induced magnetic polarons exhibit a...

Transition metal dichalcogenides (TMDC) have become attractive candidates for 2D electronics and optoelectronics. While several concepts for light emitting devices have been reported, many of them realized using exfoliated TMDC flakes of micrometer size, only few approaches tackle the challenge of upscaling to relevant device sizes. We demonstrate a light emitting diode based on WS2 monolayers in a scalable design. The devices are fabricated by combining two industrially relevant deposition processes in a vertical p-n architecture: Metal organic CVD (MOCVD) is used to realize the optically active WS2 monolayers, while ZnO deposited by spatial atomic layer deposition (sALD) is employed as an electron injection layer on the cathode side. Organic layers spin-coated on an ITO covered glass substrate provide hole injection and transport. The resulting devices exhibit rectifying behavior and red electroluminescence from an area of 6 mm2.

The integration of graphene into CMOS compatible Ge technology is in particular attractive for optoelectronic devices in the infrared spectral range. Since graphene transfer from metal substrates has detrimental effects on the electrical properties of the graphene film and moreover, leads to severe contamination issues, direct growth of graphene on Ge is highly desirable. In this work, we present recipes for a direct growth of graphene on Ge via thermal chemical vapor deposition (TCVD) and plasma-enhanced chemical vapor deposition (PECVD). We demonstrate that the growth temperature can be reduced by about 200 °C in PECVD with respect to TCVD, where usually growth occurs close to the melting point of Ge. For both, TCVD and PECVD, hexagonal and elongated morphology is observed on Ge(100) and Ge(110), respectively, indicating the dominant role of substrate orientation on the shape of graphene grains. Interestingly, Raman data indicate a compressive strain of ca. − 0.4% of the graphene film fabricated by TCVD, whereas a tensile strain of up to + 1.2% is determined for graphene synthesized via PECVD, regardless the substrate orientation. Supported by Kelvin probe force measurements, we suggest a mechanism that is responsible for graphene formation on Ge and the resulting strain in TCVD and PECVD.

One of the most prominent signatures of transition-metal doping in colloidal nanocrystals is the formation of charge carrier-induced magnetization of the dopant spin sublattice, called exciton magnetic polaron (EMP). Understanding the direction of EMP formation, however, is still a major obstacle. Here, we present a series of temperature-dependent photoluminescence studies on single colloidal Mn

Advanced optical materials 8(20), 2000694 (2020). doi:10.1002/adom.202000694, Published by Wiley-VCH, Weinheim

The intentional incorporation of transition metal impurities into colloidal semiconductor nanocrystals allows an extension of the host material's functionality. While dopant incorporation has been extensively investigated in zero-dimensional quantum dots, the substitutional replacement of atoms in two-dimensional (2D) nanostructures by magnetic dopants has been reported only recently. Here, we demonstrate the successful incorporation of Co

Red ionic iridium-based transition metal complex light-emitting electrochemical cells (iTMC-LECs) with emission centered at ca. 650 nm, maximum efficiency of 0.3%, maximum brightness above 650 cd m-2, and device lifetime well above 200 and 33 h at brightness levels of 10 and 210 cd m-2, respectively, are realized by the introduction of a p-type polymer interface to the standard design of [Ir(ppy)2(pbpy)]+[PF6]- (Hppy = 2-phenylpyridine, pbpy = 6-phenyl-2,2'-bipyridine) iTMC-LEC. The unexpected color shift from yellow to red is studied in detail with respect to operation conditions and material combination. The experimental data suggest that either exciplex formation or subordinate, usually suppressed optical transitions of the iTMC might become activated by the introduced interface, causing the pronounced red shift of the peak emission wavelength.

2D semiconductors represent an exciting new material class with great potential for optoelectronic devices. In particular, WS2 monolayers are promising candidates for light-emitting devices (LEDs) due to their direct band gap with efficient recombination in the red spectral range. Here, we present a novel LED architecture by embedding exfoliated WS2 monolayer flakes into a vertical p-n layout using organic p- and inorganic n-supporting layers. Laser lithography was applied to define the current path perpendicular to the WS2 flake. The devices exhibit rectifying behavior and emit room temperature electroluminescence with luminance up to 50 cd m-2 in the red spectral range.

In this work, we studied p-i-n InGaN/GaN core-shell microrod (μrod) LEDs using confocal microscopy with a spatial resolution below 500 nm in all three dimensions. At low excitation conditions, the devices emit in the red spectral range, while green and blue emissions become more prominent with increasing driving current. 3D photoluminescence (PL) maps demonstrate that the red emission originates from the apex of the tip area, while the green emission stems from the corners between m- and r-planes and the dominant blue emission from the m-plane. Analyzing individual μrods of the LED chip in a closed circuit configuration, a pronounced photocurrent is found for quasi-resonant laser excitation, indicating charge carrier tunneling losses out of the quantum well. This hypothesis is confirmed by applying an external voltage in the forward direction, where a characteristic blueshift of the single μrod PL signal is observed due to a modified band alignment, and a nonlinear increase in the PL intensity proves suppressed tunneling losses.

Light-emitting electrochemical cells (LECs) are attractive candidates for future low-cost lighting applications such as light-emitting smart tags, thanks to their simplicity, fully solution-based fabrication and flexibility. However, high brightness and efficiency in combination with satisfactory operation lifetimes need to be achieved for different emission colours bearing future device commercialization in mind. LECs emitting in the yellow-green spectral range, where the human eye is most sensitive are thereby particularly attractive. Here we present an improved hybrid LEC based on an Ir-iTMC, [Ir(4-Fppy)2(pbpy)][PF6] (4-Fppy = 2-(4-fluorophenyl)pyridinato, pbpy = 6-phenyl-2,2′-bipyridine) emitting at 557 nm. It features a luminance of 2400 cd m−2 when driven at a constant voltage of 4 V, and a lifetime of 271 h at a luminance of 1500 cd m−2 under pulsed current operation. The hybrid LEC shows an enhanced performance compared to a LEC solely based on the Ir-ITMC where operation lifetimes of 165 h at a luminance above 1200 cd m−2 under pulsed current operation conditions were observed. The performance improvement was achieved by addition of a solution-processed ZnO nanoparticle film on top.

Zinc sulfide has unique and easily modifiable photophysical properties and is a promising candidate for photocatalysis and optoelectronic devices. However, ZnS suffers from corrosive decomposition during excitation processes like UV irradiation, which drastically limits its field of potential applications. For the first time, complete photostabilization of individual ZnS particles by a dense, durable, and only 3-nm-thick Al₂O₃ layer, produced by rotary atomic layer deposition (ALD) is reported. In contrast to bare ZnS, the coated particles do not suffer from photocorrosive degradation even under long-term or high power UV irradiation. The presence of a protection layer covering the entire ZnS surface is additionally confirmed by microscopic and spectroscopic investigations of particle cross-sections. Further, complete inhibition of the reaction between Ag⁺ ions added as the analyte and the ZnS surface is observed. Durability tests of the as-prepared Al₂O₃ layer upon prolonged exposure to water reveal a significant decrease in the protection capability of the layer, which is ascribed to the hydrolysis of the amorphous Al₂O₃. A calcination step at 1000 °C after the ALD treatment, which leads to crystallization of the amorphous Al₂O₃ layer, successfully suppresses this hydrolysis and produces an insulating, dense, and inert protection layer.

The intentional incorporation of transition metal impurities into colloidal semiconductor nanocrystals allows an extension of the host material’s functionality. While dopant incorporation has been extensively investigated in zero-dimensional quantum dots, the substitutional replacement of atoms in two-dimensional (2D) nanostructures by magnetic dopants has been reported only recently. Here, we demonstrate the successful incorporation of Co2+ ions into the shell of CdSe/CdS core/shell nanoplatelets, using these ions (i) as microscopic probes for gaining distinct structural insights and (ii) to enhance the magneto-optical functionality of the host material. Analyzing interatomic Co2+ ligand field transitions, we conclude that Co2+ is incorporated into lattice sites of the CdS shell, and effects such as diffusion of dopants into the CdSe core or diffusion of the dopants out of the heterostructure causing self-purification play a minor role. Taking advantage of the absorption-based technique of magnetic circular dichroism, we directly prove the presence of sp-d exchange interactions between the dopants and the band charge carriers in CdSe/Co2+:CdS heteronanoplatelets. Thus, our study not only demonstrates magneto-optical functionality in 2D nanocrystals by Co2+ doping but also shows that a careful choice of the dopant type paves the way for a more detailed understanding of the impurity incorporation process into these novel 2D colloidal materials.

The flexibility of colloidal synthesis allows engineering size, shape, and composition - and thus electronic states - of semiconductor nanocrystals with a high degree of perfection. Intentional incorporation of transition metal impurities on lattice sites expands the nanocrystal functionality enabling an unprecedented adjustment of magnetic exchange interactions. Hereby, an enhanced control over spatial location and concentration of dopants down to the single atom level paves the way for tailoring giant magneto-optical effects through the precise adjustment of the wavefunction overlap between charge carriers in the host matrix and localized magnetic impurities. This chapter will review recent advances on giant magneto-optical effects in size and shape engineered colloidal II-VI nanostructures doped with Mn2+ impurities. Both, two-dimensional (2D) nanocrystals (i.e. nanoribbons, nanoplatelets) with well-defined valence band states, as well as zero-dimensional (0D) nanocrystals (quantum dots, magic-size cluster) exhibiting a complex valence band structure are considered. We will discuss how the magneto-optical response of higher excited states gives insight into fundamental properties of nano-scaled materials such as the nature of excited state transitions, valence band mixing or the presence of magneto-optically active and passive states. In addition, the chapter will include important advances in the field of solotronics, showing that magnetic functionality can be associated to the incorporation of single magnetic impurities into zero-dimensional colloidal nanostructures, yielding unique discoveries like huge zero-field exchange splittings or digital doping effects.