37 results on '"Gerrer, Louis"'
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2. TCAD-Based Design Technology Co-optimization for Variability in Nanoscale SOI FinFETs
3. RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study
4. From atoms to product reliability: toward a generalized multiscale simulation approach
5. Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulation
6. Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs
7. Insight Into Electron Traps and Their Energy Distribution Under Positive Bias Temperature Stress and Hot Carrier Aging
8. Physical simulation of Si-based resistive random-access memory devices
9. Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow
10. Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs
11. Experimental evidences and simulations of trap generation along a percolation path
12. Self-consistent physical modeling of SiOx-based RRAM structures
13. Reliability aware simulation flow: From TCAD calibration to circuit level analysis
14. Impact du claquage progressif de l'oxyde sur le fonctionnement des composants et circuits élémentaires MOS : caractérisation et modélisation
15. Impact of Oxide Soft BreakDown on MOS device and circuit operation : characterization and modeling
16. Inverse Scaling Trends for Charge-Trapping-Induced Degradation of FinFETs Performance
17. Progress in the simulation of time dependent statistical variability in nano CMOS transistors
18. Interplay Between Statistical Variability and Reliability in Contemporary pMOSFETs: Measurements Versus Simulations
19. Time-Dependent 3-D Statistical KMC Simulation of Reliability in Nanoscale MOSFETs
20. Modeling Carrier Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues
21. 3-D Statistical Simulation Comparison of Oxide Reliability of Planar MOSFETs and FinFET
22. 3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs
23. Physical simulation of Si-based resistive random-access memory devices.
24. Interplay between quantum mechanical effects and a discrete trap position in ultra-scaled FinFETs.
25. Reliability aware simulation flow: From TCAD calibration to circuit level analysis.
26. Self-consistent physical modeling of SiOx-based RRAM structures.
27. Investigation of the RTN Distribution of Nanoscale MOS Devices From Subthreshold to On-State
28. Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETs
29. Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETs
30. Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’ simulation
31. Statistical Study of Bias Temperature Instabilities by Means of 3D ˵Atomistic″ Simulation.
32. 3D dynamic RTN simulation of a 25nm MOSFET: The importance of variability in reliability evaluation of decananometer devices
33. Unified Compact Model of Soft Breakdown Oxide Degradation and Its Impact on CMOS Circuits Reliability
34. New Insights Into Oxide Breakdown Current Partitioning Analysis for MOS Devices
35. Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization.
36. Modelling of reliability of nanoscale MOSFETs within the discrete charge trapping paradigm.
37. Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale Flash memories.
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