371 results on '"Ghibaudo, Gérard"'
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2. Threshold voltage in FD-SOI MOSFETs
3. p-type NiOx ultrathin film as highly efficient hole extraction layer in n-type PbS quantum dots based NIR photodiode
4. Chapter Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications
5. Detailed comparison of threshold voltage extraction methods in FD-SOI MOSFETs
6. The core-shell junctionless MOSFET
7. Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments
8. Breaking the subthreshold slope limit in MOSFETs
9. Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications
10. Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature
11. Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs
12. Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors
13. Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors
14. Channel width dependent subthreshold operation of tri-gate junctionless transistors
15. Modelling and analysis of gate leakage current and its wafer level variability in advanced FD-SOI MOSFETs
16. (Invited) Cryogenic Electronics for Quantum Computing ICs: What Can Bring FDSOI
17. Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements
18. Series resistance in different operation regime of junctionless transistors
19. Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology
20. HTGB and HCI stress induced variability in the nanowire Si MOSFETs
21. Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect
22. Impact of series resistance on the operation of junctionless transistors
23. Investigation on interface charges in SiN/AlxGa1−xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors.
24. Behavior of subthreshold conduction in junctionless transistors
25. P-Type Niox Ultra-Thin Film as Highly Efficient Holes Extraction Layer in N-Type Pbs Quantum Dots Based Nir Photodiode
26. Resistive memory variability: A simplified trap-assisted tunneling model
27. In depth characterization of electron transport in 14 nm FD-SOI CMOS devices
28. Dynamic variability in 14 nm FD-SOI MOSFETs and transient simulation methodology
29. Physically-based extraction methodology for accurate MOSFET degradation assessment
30. Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions
31. A comparative mismatch study of the 20 nm Gate-Last and 28 nm Gate-First bulk CMOS technologies
32. Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs
33. Device Physics and Electrical Performance of Bulk Silicon Mosfets
34. SOI MOSFETs
35. (Invited) Second Harmonic Generation: Non-Linear Optics for Characterization of Electrical Properties of Dielectric-on-Semiconductor Interfaces
36. Metal evaporation dependent charge injection in organic transistors
37. Impact of channel width on back biasing effect in tri-gate MOSFET
38. MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD tools
39. Low Frequency Noise in Double-Gate SOI CMOS Devices
40. CHARACTERIZATION AND MODELING OF DEFECTS IN HIGH-K MEASUREMENTS LAYERS THROUGH FAST ELECTRICAL TRANSIENT
41. Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors
42. Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances
43. Back biasing effects in tri-gate junctionless transistors
44. How small the contacts could be optimal for nanoscale organic transistors?
45. Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances
46. New parameter extraction method based on split C–V measurements in FDSOI MOSFETs
47. Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors
48. Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors
49. Low-temperature electrical characterization of junctionless transistors
50. Tunable contact resistance in double-gate organic field-effect transistors
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