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In order to develop an efficient metal-free solar energy harvester, we herein performed the electronic structure calculation, followed by the hot carrier relaxation dynamics of two dimensional (2D) aza-covalent organic framework by time domain density functional calculations in conjunction with non-adiabatic molecular dynamics (NAMD) simulation. The electronic structure calculation shows that the aza-covalent organic framework (COF) is a direct bandgap semiconductor with acute charge separation and effective optical absorption in the UV-visible region. Our study of non-adiabatic molecular dynamics simulation predicts the sufficiently prolonged electron–hole recombination process (6.8 nanoseconds) and the comparatively faster electron (22.48 ps) and hole relaxation (0.51 ps) dynamics in this two-dimensional aza-COF. According to our theoretical analysis, strong electron–phonon coupling is responsible for the rapid charge relaxation, whereas the electron–hole recombination process is slowed down by relatively weak electron–phonon coupling, relatively lower non-adiabatic coupling, and quick decoherence time. We do hope that our results of NAMD simulation on exciton relaxation dynamics will be helpful for designing photovoltaic devices based on this two dimensional aza-COF. [ABSTRACT FROM AUTHOR]

Herein, we have investigated the unexplored thermoelectric properties of Zintl-phase KCaBi using firstprinciples calculation and the solution of the Boltzmann transport equation. KCaBi shows intrinsically very low lattice thermal conductivities (kl) along the (x(y), and z)-directions of (1.78, 0.68) and (1.15, 0.43) W m-1 K-1 at 300 and 800 K, respectively. Along with the effect of very low kl, the high figure of merit (ZT) for p-type KCaBi results from the high Seebeck coefficients (S) and optimal electrical conductivities (s), which originate from the high and steep total density of state (TDOS) at the valence band edge and the less dispersed multi-valley nature of the valence band edge in the band structure. On the other hand, large ZT for n-type KCaBi results from moderate S and high s caused by the sloped TDOS at the conduction band edge and the highly dispersed nature of the conduction band edge in the band structure, and very low values of kl. The highest ZT of KCaBi that we obtained at 800 K along the (x(y), and z)-directions was (1.83, 0.80) for the p-type case at a hole concentration of 1021 cm-3 and (1.36, 1.22) for the n-type case at electron concentration 7 x 1018 cm-3. Our study demonstrates that both ptype and n-type KCaBi have the potential to be promising thermoelectric materials. [ABSTRACT FROM AUTHOR]