125 results on '"Gogova, Daniela"'
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2. Long-lived excitons in thermally annealed hydrothermal ZnO
3. Ion implantation in \b{eta}-Ga2O3: physics and technology
4. Low Al-content n-type Al[formula omitted]Ga[formula omitted]N layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
5. Comparative Study of Ion-Induced Damage Formation in GaN and beta-Ga2O3
6. Molecular Effect in Damage Formation in β-Ga2O3
7. A new plasma-based approach to hydrogen intercalation of graphene
8. Plasma-chemical purification of iodine
9. Ag/PVP/PAN nanocomposites with triangular nanoprisms of silver synthesized by UV-induced polymerization: Morphology manipulation and optical properties tuning
10. Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
11. Surface roughness evolution in a solid-on-solid model of epitaxial growth
12. Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD
13. A novel plasma-based method for synthesis of As-Se-Te films: Impact of plasma parameters on the structure, composition, and optical properties
14. A novel method for synthesis of arsenic sulfide films employing conversion of arsenic monosulfide in a plasma discharge
15. Infrared and Raman spectroscopy study of As[sbnd]S chalcogenide films prepared by plasma-enhanced chemical vapor deposition
16. Investigation of the composition-structure-property relationship of AsxTe100 − x films prepared by plasma deposition
17. Optical emission of two-dimensional arsenic sulfide prepared by plasma
18. Synthesis of gallium oxide via interaction of gallium with iodide pentoxide in plasma
19. Structural and optical properties of arsenic sulfide films synthesized by a novel PECVD-based approach
20. A new method for synthesis of As-Te chalcogenide films
21. Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
22. Surface roughness evolution in a solid-on-solid model of epitaxial growth
23. The role of NH3 and hydrocarbon mixtures in GaN pseudo-halide CVD: a quantum chemical study
24. Ion-beam modification of metastable gallium oxide polymorphs
25. Point defects in a two-dimensional ZnSnN₂ nanosheet : a first-principles study on the electronic and magnetic properties
26. ZnSnN 2 in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap
27. Ion implantation in β-Ga2O3: Physics and technology
28. Epitaxial growth of β-Ga2O3 by hot-wall MOCVD.
29. Semiconducting Chalcogenide Alloys Based on the (Ge, Sn, Pb) (S, Se, Te) Formula with Outstanding Properties: A First-Principles Calculation Study
30. Impact of Cr2O3 additives on the gas-sensitive properties of β-Ga2O3 thin films to oxygen, hydrogen, carbon monoxide, and toluene vapors
31. Electronic and optical properties of two-dimensional heterostructures and heterojunctions between doped-graphene and C- and N-containing materials
32. Corrigendum to “A novel plasma-based method for synthesis of As–Se–Te films: Impact of plasma parameters on the structure, composition, and optical properties” [Superlattice Microstruct. 128 (2019) 334–341]
33. Gallium Oxide Films Prepared by Oxidation of Gallium in Oxygen-Hydrogen Plasma
34. High frequency electromagnetic field processing of amorphous silicon layers containing nanoclusters produced by implantation of metal ions in Si(1 0 0) matrix
35. ZnSnN2 in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap.
36. Synthesis of Gallium Oxide from the Elements at RF Plasma Discharge in the Argon-Oxygen Mixture
37. A Method for Deep Purification of Iodine for Semiconductor Applications
38. Infrared and Raman spectroscopy study of As S chalcogenide films prepared by plasma-enhanced chemical vapor deposition
39. Investigation of the composition-structure-property relationship of AsxTe100x films prepared by plasma deposition
40. Homoepitaxial growth of beta-Ga2O3 layers by metal-organic vapor phase epitaxy
41. InN nanopillars grown from In-rich conditions by migration enhanced afterglow technique
42. Reactive magnetron sputtering of Nb-doped TiO2 films: Relationships between structure, composition and electrical properties
43. Epitaxial stabilization of pseudomorphic α-Ga2O3on sapphire (0001)
44. Surface roughness evolution in a solid-on-solid model of epitaxial growth
45. Initial results for epitaxial growth of InN on gallium oxide and improved Migration-Enhanced Afterglow Epitaxy growth on gallium nitride
46. Correction to Gas-Phase Reactions Regarding GaN Crystal Growth in a Carbon-Based Transport System: A Quantum Chemical Study
47. Homoepitaxial growth of β-Ga2O3layers by metal-organic vapor phase epitaxy
48. Gas-Phase Reactions Regarding GaN Crystal Growth in a Carbon-Based Transport System: A Quantum Chemical Study
49. The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
50. A new approach to free-standing GaN using β-Ga2O3 as a substrate
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