25 results on '"Golshani, Negin"'
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2. Sub-1 dB Loss SiN-to-Polymer Waveguide Coupling: an Enabler for Co-Packaged Optics
3. Collective die-to-wafer bonding enabling low-loss evanescent coupling for optically interconnected System-on-Wafer
4. Imec silicon photonics platforms: performance overview and roadmap
5. PureB multi-guard ring structures for detector applications
6. Manufacturing uniform field silicon drift detector using double boron layer
7. High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications
8. Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding with sub-300nm Alignment Precision
9. Low-loss, low-temperature PVD SiN waveguides
10. Wafer-Scale Hybrid Integration of InP DFB Lasers on Si Photonics by Flip-Chip Bonding With sub-300 nm Alignment Precision
11. Silicon Photonics for 56G NRZ Optical Interconnects
12. Corrigendum to “High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications” [Solid State Electron. 105 (2015) 6–11]
13. Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility
14. Research Update: Reactively sputtered nanometer-thin ZrN film as a diffusion barrier between Al and boron layers for radiation detector applications
15. Single-Grain Si Thin-Film Transistors for Monolithic 3D-ICs and Flexible Electronics
16. VUV/Low-Energy Electron Si Photodiodes With Postmetal 400 $^{\circ}{\rm C}$ PureB Deposition
17. High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers
18. Monolithic 3D-ICs with single grain Si thin film transistors
19. Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes
20. Monolithic 3-D Integration of SRAM and Image Sensor Using Two Layers of Single-Grain Silicon
21. Monolithic 3D-ICs with single grain Si thin film transistors
22. Monolithic 3D integration of SRAM and image sensor using two layers of single grain silicon
23. High Speed Six-Transistor Static Random Access Memory Cells Using Single Grain Thin Film Transistors Fabricated at Low Temperature Process
24. A novel silicon interposer for measuring devices requiring complex two-sided contacting.
25. VUV/Low-Energy Electron Si Photodiodes With Postmetal 400^\circC PureB Deposition.
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