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The altermagnet candidate Mn5Si3 has attracted wide attention in the context of non-relativistic spin physics, due to its composition of light elements. However, the presumed structure of the altermagnetic phase had yet to be demonstrated. In this study, we demonstrate a hallmark of altermagnetism in Mn5Si3 thin films, namely the three options, or variants, for the checkerboard distribution of the magnetic Mn atoms. The magnetic symmetries were altered by field-rotation of the N\'eel vector along relevant crystal directions, resulting in anomalous Hall effect anisotropy. The experimental results in nanoscale devices were corroborated by a theoretical model involving atomic site dependent anisotropy and bulk Dzyaloshinskii-Moriya interaction for a single variant.

We consider a thin film of $d$-wave altermagnet bent in a stretching-free manner and demonstrate that gradients of the film curvature induce a local magnetization which is approximately tangential to the film. The magnetization amplitude directly reflects the altermagnetic symmetry and depends on the direction of bending. It is maximal for the bending along directions of the maximal altermagnetic splitting of the magnon bands. A periodically bent film of sinusoidal shape possesses a total magnetic moment per period $\propto\mathscr{A}^2q^4$ where $\mathscr{A}$ and $q$ are the bending amplitude and wave vector, respectively. The total magnetic moment is perpendicular to the plane of the unbent film and its direction (up or down) is determined by the bending direction. A film roll up to a nanotube possesses a toroidal moment directed along the tube $\propto \delta_r/r^2$ per one coil, where $r$ and $\delta_r$ are the coil radius and the pitch between coils. All these analytical predictions agree with numerical spin-lattice simulations.

Magnonic black holes-analogue event horizons for the spin-wave collective excitations of ordered magnets-can be used for fundamental research, for example for investigating Hawking radiation, but also for technological applications of spin waves. Here we show how to engineer a horizon for spin waves in antiferromagnets, which have the attractive feature of fast magnetization dynamics and linear dispersion relation. We propose a set-up with spatially varying exchange interaction with spin transfer torque to implement the horizon and a second set-up for the amplification of spin waves consisting of an antiferromagnet subject to a spatially varying external magnetic field that is driven by spin orbit torque. We compute the values of parameters needed to implement the horizon and to have amplification of spin waves. We develop the corresponding Klein-Gordon equation and quantify the amplification. Our work paves the way for investigation of Hawking radiation of spin waves and for antiferromagnet-based spin-waves amplifiers., Comment: 10 pages, 6 figures

Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative N\'eel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the N\'eel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material.

Chirality as internal degree of freedom of a mesoscopic domain wall inside a quasi-one-dimensional fixture can be controlled by spin-polarized current for ferro- as well as anti-ferro-magnetic domain walls. We show that the current density required for the chirality manipulation can be significantly reduced in the low-temperature regime where the chirality dynamics exhibits quantum effects. In this quantum regime, weak currents can excite Bloch oscillations of the domain wall angular rotation velocity, with the oscillation frequency proportional to the current, modulated by a much higher magnon-range frequency. In addition to that, the Wannier-Stark localization effects enable controlled switching between different chiral states, suppressing inertial effects characteristic for the classical regime. We also show that for recently discovered novel class of magnetic materials -- altermagnets -- chirality switching can be driven by the usual charge current (not spin-polarized)., Comment: 10 pages, 6 figures; (v2) updated discussion on the feasibility of experimental observation

Antiferromagnets offer much faster dynamics compared to their ferromagnetic counterparts but their order parameter is extremely difficult to detect and control. So far, controlling the N\'eel order parameter electrically is limited to only very few materials where N\'eel spin-orbit torques are allowed by symmetry. In this work, we show that coupling a thin ferromagnet (permalloy) layer on top of an antiferromagnet (Mn$_2$Au) solves a major roadblock -- the controlled reading, writing, and manipulation of antiferromagnetic domains. We confirm by atomistic spin dynamics simulations that the domain wall patterns in the Mn$_2$Au are imprinted on the permalloy, therefore allowing for indirect imaging of the N\'eel order parameter. Our simulations show that the coupled domain wall structures in Mn$_2$Au-Py bilayers can be manipulated by either acting on the N\'eel order parameter via N\'eel spin-orbit torques or by acting on the magnetisation (the ferromagnetic order parameter) via magnetic fields. In both cases, we predict ultra-high domain wall speeds on the order of 8.5 km/s. Thus, employing a thin ferromagnetic layer has the potential to easily control the N\'eel order parameter in antiferromagnets even where N\'eel spin-orbit torques are forbidden by symmetry. The controlled manipulation of the antiferromagnetic order parameter provides a promising basis for the development of high-density storage and efficient computing technologies working in the THz regime., Comment: 8 pages, 7 figures, 1 table

Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in polycrystalline materials. Here we show that in polycrystalline Mn3Zn0.5Ge0.5N with non-collinear antiferromagnetic order, changes in the diagonal and, rather unexpected, off-diagonal components of the resistivity tensor occur at low temperatures indicating subtle transitions between magnetic phases of different symmetry. This is supported by neutron scattering and explained within a phenomenological model which suggests that the phase transitions in magnetic field are associated with field induced topological orbital momenta. The fact that we observe transitions between spin phases in a polycrystal, where effects of crystalline anisotropy are cancelled suggests that they are only controlled by exchange interactions. The observation of an off-diagonal resistivity extends the possibilities for realising antiferromagnetic spintronics with polycrystalline materials., Comment: 4 figures, 1 table

Antiferromagnets have large potential for ultrafast coherent switching of magnetic order with minimum heat dissipation. In novel materials such as Mn$_2$Au and CuMnAs, electric rather than magnetic fields may control antiferromagnetic order by N\'eel spin-orbit torques (NSOTs), which have, however, not been observed on ultrafast time scales yet. Here, we excite Mn$_2$Au thin films with phase-locked single-cycle terahertz electromagnetic pulses and monitor the spin response with femtosecond magneto-optic probes. We observe signals whose symmetry, dynamics, terahertz-field scaling and dependence on sample structure are fully consistent with a uniform in-plane antiferromagnetic magnon driven by field-like terahertz NSOTs with a torkance of (150$\pm$50) cm$^2$/A s. At incident terahertz electric fields above 500 kV/cm, we find pronounced nonlinear dynamics with massive N\'eel-vector deflections by as much as 30{\deg}. Our data are in excellent agreement with a micromagnetic model which indicates that fully coherent N\'eel-vector switching by 90{\deg} within 1 ps is within close reach., Comment: 16 pages, 4 figures

Ferromagnets generate an anomalous Hall effect even without the presence of a magnetic field, something that conventional antiferromagnets cannot replicate but noncollinear antiferromagnets can. The anomalous Hall effect governed by the resistivity tensor plays a crucial role in determining the presence of time reversal symmetry and the topology present in the system. In this work we reveal the complex origin of the anomalous Hall effect arising in noncollinear antiferromagnets by performing Hall measurements with fields applied in selected directions in space with respect to the crystalline axes. Our coplanar magnetic field geometry goes beyond the conventional perpendicular field geometry used for ferromagnets and allows us to suppress any magnetic dipole contribution. It allows us to map the in-plane anomalous Hall contribution and we demonstrate a 120$^\circ$ symmetry which we find to be governed by the octupole moment at high fields. At low fields we subsequently discover a surprising topological Hall-like signature and, from a combination of theoretical techniques, we show that the spins can be recast into dipole, emergent octupole and noncoplanar effective magnetic moments. These co-existing orders enable magnetization dynamics unachievable in either ferromagnetic or conventional collinear antiferromagnetic materials.

Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the non-trivial interaction of magnetostriction, substrate clamping and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances, and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will pave the way towards realizing truly functional antiferromagnetic devices., Comment: 31 pages, 7 figures

We investigate magnetization dynamics of Mn$_{2}$Au/Py (Ni$_{80}$Fe$_{20}$) thin film bilayers using broadband ferromagnetic resonance (FMR) and Brillouin light scattering spectroscopy. Our bilayers exhibit two resonant modes with zero-field frequencies up to almost 40 GHz, far above the single-layer Py FMR. Our model calculations attribute these modes to the coupling of the Py FMR and the two antiferromagnetic resonance (AFMR) modes of Mn2Au. The coupling-strength is in the order of 1.6 T$\cdot$nm at room temperature for nm-thick Py. Our model reveals the dependence of the hybrid modes on the AFMR frequencies and interfacial coupling as well as the evanescent character of the spin waves that extend across the Mn$_{2}$Au/Py interface

In this paper, we develop the mathematical framework to describe the physical phenomenon behind the equilibrium configuration joining two antiferromagnetic domains. We firstly define the total energy of the system and deduce the governing equations by minimizing it with respect to the field variables. Then, we solve the resulting system of nonlinear PDEs together with proper initial and boundary conditions by varying the orientation of the 90$^{\circ}$ domain wall (DW) configuration along the sample. Finally, the angular dependence of elastic and magnetoelastic energies as well as of incompatibility-driven volume effects is computed.

Magnon eigenmodes in easy-plane antiferromagnetic insulators are linearly polarized and are not expected to carry any net spin angular momentum. Motivated by recent nonlocal spin transport experiments in the easy-plane phase of hematite, we perform a series of micromagnetic simulations in a nonlocal geometry at finite temperatures. We show that by tuning an external magnetic field, we can control the magnon eigenmodes and the polarization of the spin transport signal in these systems. We argue that a coherent beating oscillation between two orthogonal linearly polarized magnon eigenmodes is the mechanism responsible for finite spin transport in easy-plane antiferromagnetic insulators. The sign of the detected spin signal is also naturally explained by the proposed coherent beating mechanism. Our finding opens a path for on-demand control of the spin signal in a large class of easy-plane antiferromagnetic insulators.

Antiferromagnets have recently been propelled to the forefront of spintronics by their high potential for revolutionizing memory technologies. For this, understanding the formation and driving mechanisms of the domain structure is paramount. In this work, we investigate the domain structure in a thin-film canted antiferromagnet $\alpha$-Fe$_2$O$_3$. We find that the internal destressing fields driving the formation of domains do not follow the crystal symmetry of $\alpha$-Fe$_2$O$_3$, but fluctuate due to substrate clamping. This leads to an overall isotropic distribution of the N\'eel order with locally varying effective anisotropy in antiferromagnetic thin films. Furthermore, we show that the weak ferromagnetic nature of $\alpha$-Fe$_2$O$_3$ leads to a qualitatively different dependence on magnetic field compared to collinear antiferromagnets such as NiO. The insights gained from our work serve as a foundation for further studies of electrical and optical manipulation of the domain structure of antiferromagnetic thin films., Comment: 9 pages, 5 figures

We report the ultrafast, (sub)picosecond reduction of the antiferromagnetic order of the insulating NiO thin film in a Pt/NiO bilayer. This reduction of the antiferromagnetic order is not present in pure NiO thin films after a strong optical excitation. This ultrafast phenomenon is attributed to an ultrafast and highly efficient energy transfer from the optically excited electron system of the Pt layer into the NiO spin system. We propose that this energy transfer is mediated by a stochastic exchange scattering of hot Pt electrons at the Pt/NiO interface., Comment: 12 pages, 6 figures

We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets.

We propose a concept of non-collinear spin current, whose spin polarization varies in space even in non-magnetic crystals. While it is commonly assumed that the spin polarization of the spin Hall current is uniform, asymmetric local crystal potential generally allows the spin polarization to be non-collinear in space. Based on microscopic considerations we demonstrate that such non-collinear spin Hall currents can be observed for example in layered Kagome Mn$_3$X (X = Ge, Sn) compounds. Moreover, by referring to atomistic spin dynamics simulations we show that non-collinear spin currents can be used to switch the chiral spin texture of Mn$_3$X in a deterministic way even in the absence of an external magnetic field. Our theoretical prediction can be readily tested in experiments, which will open a novel route toward electric control of complex spin structures in non-collinear antiferromagnets.

Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.

We theoretically describe the behavior of a terahertz nano-oscillator based on an anisotropic antiferromagnetic dynamical element driven by spin torque. We consider the situation when the polarization of the spin-current is perpendicular to the external magnetic field applied along the anisotropy easy-axis. We determine the domain of the parametric space (field, current) where the oscillator demonstrates chaotic dynamics. Characteristics of the chaotic regimes are analyzed using conventional techniques such as spectra of the Lyapunov exponents. We show that the threshold current of the chaos appearance is particularly low in the vicinity of the spin-flop transition. In this regime, we consider the mechanism of the chaos appearance in detail when the field is fixed and the current density increases. We show that the appearance of chaos is preceded by a regime of quasiperiodic dynamics on the surface of a two-frequency torus arising in phase space as a result of the Neimark-Sacker bifurcation., Comment: 12 pages, 9 figures

We report room temperature long-distance spin transport of magnons in antiferromagnetic thin film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 {\mu}m, and magnetic domain governed decay lengths of 175 nm for the low frequency magnons, through electrical transport measurements demonstrating that the introduction of non-magnetic dopants does not strongly reduce the transport length scale showing that the magnetic damping of hematite is not significantly increased. We observe a complex field dependence of the non-local signal independent of the magnetic state visible in the local magnetoresistance and direct magnetic imaging of the antiferromagnetic domain structure. We explain our results in terms of a varying and applied-field-dependent ellipticity of the magnon modes reaching the detector electrode allowing us to tune the spin transport.

Optical generation of complex spin textures is one of the most exciting challenges of modern spintronics. Here, we uncover a distinct physical mechanism for imprinting spin chirality into collinear magnets with short laser pulses. By simultaneously treating the laser-ignited evolution of electronic structure and magnetic order, we show that their intertwined dynamics can result in an emergence of quasi-stable chiral states. We find that laser-driven chirality does not require any auxiliary external fields or intrinsic spin-orbit interaction to exist, and it can survive on the time scale of nanoseconds even in the presence of thermal fluctuations, which makes the uncovered mechanism relevant for understanding various optical experiments on magnetic materials. Our findings open a new perspective at the interaction of complex chiral magnetism with light., Comment: 9+4 pages and 7+12 figures with supplementary materials

We observe a strong thermally-controlled magnon-mediated interlayer coupling of two ferromagnetic layers via an antiferromagnetic spacer in spin-valve type trilayers. The effect manifests itself as a field-induced coherent switching of the two ferromagnets, which can be controlled by varying temperature and the spacer thickness. We explain the observed behavior as due to a strong hybridization of the ferro- and antiferro-magnetic magnon modes in the trilayer at temperatures just below the N\'eel temperature of the antiferromagnetic spacer., Comment: 4 pages, 4 figures

Antiferromagnetic materials can host spin-waves with polarizations ranging from circular to linear depending on their magnetic anisotropies. Until now, only easy-axis anisotropy antiferromagnets with circularly polarized spin-waves were reported to carry spin-information over long distances of micrometers. In this article, we report long-distance spin-transport in the easy-plane canted antiferromagnetic phase of hematite and at room temperature, where the linearly polarized magnons are not intuitively expected to carry spin. We demonstrate that the spin-transport signal decreases continuously through the easy-axis to easy-plane Morin transition, and persists in the easy-plane phase through current induced pairs of linearly polarized magnons with dephasing lengths in the micrometer range. We explain the long transport distance as a result of the low magnetic damping, which we measure to be below 0.0001 as in the best ferromagnets. All of this together demonstrates that long-distance transport can be achieved across a range of anisotropies and temperatures, up to room temperature, highlighting the promising potential of this insulating antiferromagnet for magnon-based devices.

NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy respecting its symmetry, we describe antiferromagnetic switching at THz frequency by a spin transfer torque mechanism. Sub-picosecond S-state switching between the six allowed stable spin directions is found for reasonably achievable spin currents, like those generated by laser induced ultrafast demagnetization. A simple procedure for picosecond writing of a six-state memory is described, thus opening the possibility to speed up current logic of electronic devices by several orders of magnitude., Comment: 8 pages, 11 figures

Motivated by the importance of understanding competing mechanisms to current-induced spin-orbit torque in complex magnets, we develop a unified theory of current-induced spin-orbital coupled dynamics. The theory describes angular momentum transfer between different degrees of freedom in solids, e.g., the electron orbital and spin, the crystal lattice, and the magnetic order parameter. Based on the continuity equations for the spin and orbital angular momenta, we derive equations of motion that relate spin and orbital current fluxes and torques describing the transfer of angular momentum between different degrees of freedom. We then propose a classification scheme for the mechanisms of the current-induced torque in magnetic bilayers. Based on our first-principles implementation, we apply our formalism to two different magnetic bilayers, Fe/W(110) and Ni/W(110), which are chosen such that the orbital and spin Hall effects in W have opposite sign and the resulting spin- and orbital-mediated torques can compete with each other. We find that while the spin torque arising from the spin Hall effect of W is the dominant mechanism of the current-induced torque in Fe/W(110), the dominant mechanism in Ni/W(110) is the orbital torque originating in the orbital Hall effect of W. It leads to negative and positive effective spin Hall angles, respectively, which can be directly identified in experiments. This clearly demonstrates that our formalism is ideal for studying the angular momentum transfer dynamics in spin-orbit coupled systems as it goes beyond the "spin current picture" by naturally incorporating the spin and orbital degrees of freedom on an equal footing. Our calculations reveal that, in addition to the spin and orbital torque, other contributions such as the interfacial torque and self-induced anomalous torque within the ferromagnet are not negligible in both material systems., Comment: 26 pages, 13 figures

Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. Here, we show that the spin Hall magnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spin structure via simple electrical transport experiments by investigating the easy-plane antiferromagnetic insulators $\alpha$-Fe2O3 (hematite) and NiO in bilayer heterostructures with a Pt heavy metal top electrode. While rotating an external magnetic field in three orthogonal planes, we record the longitudinal and the transverse resistivities of Pt and observe characteristic resistivity modulations consistent with the SMR effect. We analyze both their amplitude and phase and compare the data to the results from a prototypical collinear ferrimagnetic Y3Fe5O12/Pt bilayer. The observed magnetic field dependence is explained in a comprehensive model, based on two magnetic sublattices and taking into account magnetic field-induced modifications of the domain structure. Our results show that the SMR allows us to understand the spin configuration and to investigate magnetoelastic effects in antiferromagnetic multi-domain materials. Furthermore, in $\alpha$-Fe2O3/Pt bilayers, we find an unexpectedly large SMR amplitude of $2.5 \times 10^{-3}$, twice as high as for prototype Y3Fe5O12/Pt bilayers, making the system particularly interesting for room-temperature antiferromagnetic spintronic applications.

We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of $4x10^{-11} T A^{-1} m^2$. The N\'eel vector final state ($n \perp j$) is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic constant of the CoO., Comment: 16 pages (manuscript and supplementary), 12 figures. Acknowledgments corrected

The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic spin-waves in thin films is anticipated to lead to new exotic phenomena such as spin-superfluidity, requiring an efficient propagation of spin-waves in thin films. However, the reported decay length in thin films has so far been limited to a few nanometers. In this work, we achieve efficient spin-wave propagation, over micrometer distances, in thin films of the insulating antiferromagnet hematite with large magnetic domains whilst evidencing much shorter attenuation lengths in multidomain thin films. Through transport and magnetic imaging, we conclude on the role of the magnetic domain structure and spin-wave scattering at domain walls to govern the transport. We manipulate the spin transport by tailoring the domain configuration through field cycle training. For the appropriate crystalline orientation, zero-field spin-transport is achieved across micrometers, as required for device integration.

Two hundred years ago, Andr\'e-Marie Amp\`ere discovered that electric loops in which currents of electrons are generated by a penetrating magnetic field can interact with each other. Here we show that Amp\`ere's observation can be transferred to the quantum realm of interactions between triangular plaquettes of spins on a lattice, where the electrical currents at the atomic scale are associated with a peculiar type of the orbital motion of electrons in response to the non-coplanarity of neighbouring spins playing the role of a magnetic field. The resulting topological orbital moment underlies the relation of the orbital dynamics with the topology of the spin structure. We demonstrate that the interactions of the topological orbital moments with each other and with the spins of the underlying lattice give rise to a new class of magnetic interactions $-$ topological chiral interactions $-$ which can dominate over the celebrated Dzyaloshinskii-Moriya interaction, thus opening a path for the realization of new classes of chiral magnetic materials with three-dimensional magnetization textures such as magnetic hopfions.

We theoretically predict and classify the localized modes of a skyrmion in a collinear uniaxial antiferromagnet and discuss how they can be excited. As a central result, we find two branches of skyrmion eigenmodes with distinct physical properties characterized by being low or high energy excitations. The frequency dependence of the low-energy modes scales as $R_0^{-2}$ for skyrmions with large radius $R_0$. Furthermore, we predict localized high-energy eigenmodes, which have no direct ferromagnetic counterpart. Except for the breathing mode, we find that all localized antiferromagnet skyrmion modes, both in the low and high-energy branch, are doubly degenerated in the absence of a magnetic field and split otherwise. We explain our numerical results for the low-energy modes within a string model representing the skyrmion boundary., Comment: 13 pages, 9 figures

We present a theoretical formalism to address the dynamics of textured, noncolliear antiferromagnets subject to spin current injection. We derive sine-Gordon type equations of motion for the antiferromagnets, which are applicable to technologically important antiferromagnets such as Mn3Ir and Mn3Sn, and enables an analytical approach to domain wall dynamics in those materials. We obtain the expression for domain wall velocity, which is estimated to reach around 1 km/s in Mn3Ir by exploiting spin Hall effect with electric current density around 10^11A/m^2., Comment: 3 figures

We demonstrate that we can determine the antiferromagnetic anisotropies and the bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite, {\alpha}-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR) technique. We develop an analytical model that in combination with SMR measurements, allow for the identification of the material parameters of this prototypical antiferromagnet over a wide range of temperatures and magnetic field values. Using devices with different orientations, we demonstrate that the SMR response strongly depends on the direction of the charge current with respect to the magneto-crystalline anisotropies axis. We show that we can extract the anisotropies over a wide temperature range including across the Morin phase transition. We observe that the electrical response is dominated by the orientation of the antiferromagnetic N\'eel order parameter, rather than by the emergent weak magnetic moment. Our results highlight that the surface sensitivity of the SMR allows accessing the magnetic anisotropies of antiferromagnetic crystals and in particular thin films where other methods to determine anisotropies such as bulk-sensitive magnetic susceptibility measurements do not provide sufficient sensitivity.

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs., Comment: 26 pages, including supplementary material

We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various types of spin torque acting on the antiferromagnet as well as for charge and spin currents flowing through the junction. The obtained results are applicable in the limit of slow magnetization dynamics. We identify a parameter regime in which an unconventional damping-like torque can become comparable in magnitude to the equivalent of the conventional Slonczewski's torque generalized to antiferromagnets. Moreover, we show that the antiferromagnetic sublattice structure opens up a channel of electron transport which does not have a ferromagnetic analogue and that this mechanism leads to a pronounced field-like torque. Both charge conductance and spin current transmission through the junction depend on the relative orientation of the ferromagnetic and the antiferromagnetic vectors (order parameters). The obtained formulas for charge and spin currents allow us to identify the microscopic mechanisms responsible for this angular dependence and to assess the efficiency of an antiferromagnetic metal acting as a spin current polarizer.

Colossal magnetoresistance (CMR) refers to a large change in electrical conductivity induced by a magnetic field in the vicinity of a metal-insulator transition and has inspired extensive studies for decades\cite{Ramirez1997, Tokura2006}. Here we demonstrate an analogous spin effect near the N\'eel temperature $T_{\rm{N}}$=296 K of the antiferromagnetic insulator \CrO. Using a yttrium iron garnet \YIG/\CrO/Pt trilayer, we injected a spin current from the YIG into the \CrO layer, and collected via the inverse spin Hall effect the signal transmitted in the heavy metal Pt. We observed a change by two orders of magnitude in the transmitted spin current within 14 K of the N\'eel temperature. This transition between spin conducting and nonconducting states could be also modulated by a magnetic field in isothermal conditions. This effect, that we term spin colossal magnetoresistance (SCMR), has the potential to simplify the design of fundamental spintronics components, for instance enabling the realization of spin current switches or spin-current based memories.

Searching for novel spin caloric effects in antiferromagnets we study the properties of thermally activated magnons in the presence of an external spin current and temperature gradient. We predict the spin Peltier effect -- generation of a heat flux by spin accumulation -- in an antiferromagnetic insulator with cubic or uniaxial magnetic symmetry. This effect is related with spin-current induced splitting of the relaxation times of the magnons with opposite spin direction. We show that the Peltier effect can trigger antiferromagnetic domain wall motion with a force whose value grows with the temperature of a sample. At a temperature, larger than the energy of the low-frequency magnons, this force is much larger than the force caused by direct spin transfer between the spin current and the domain wall. We also demonstrate that the external spin current can induce the magnon spin Seebeck effect. The corresponding Seebeck coefficient is controlled by the current density. These spin-current assisted caloric effects open new ways for the manipulation of the magnetic states in antiferromagnets., Comment: SUbmitted to J.Phus. D as a part of special issue on Spin Caloritronics

In metallic ferromagnets, the interaction between local magnetic moments and conduction electrons renormalizes parameters of the Landau-Lifshitz-Gilbert equation such as the gyromagnetic ratio and the Gilbert damping, and makes them dependent on the magnetic configurations. Although the effects of the renormalization for nonchiral ferromagnets are usually minor and hardly detectable, we show that the renormalization does play a crucial role for chiral magnets. Here the renormalization is chiral and as such we predict experimentally identifiable effects on the phenomenology of magnetization dynamics. In particular, our theory for the self-consistent magnetization dynamics of chiral magnets allows for a concise interpretation of domain wall creep motion. We also argue that the conventional creep theory of the domain wall motion, which assumes Markovian dynamics, needs critical reexamination since the gyromagnetic ratio makes the motion non-Markovian. The non-Markovian nature of the domain wall dynamics is experimentally checkable by the chirality of the renormalization., Comment: 8 pages, 3 figures, 1 table

We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on collinear ferrimagnets, the modulation is phase shifted by 90{\deg} and its amplitude strongly increases with the magnitude of the magnetic field. We explain the observed magnetic field-dependence of the spin Hall magnetoresistance in a comprehensive model taking into account magnetic field induced modifications of the domain structure in antiferromagnets. With this generic model we are further able to estimate the strength of the magnetoelastic coupling in antiferromagnets. Our detailed study shows that the spin Hall magnetoresistance is a versatile tool to investigate the magnetic spin structure as well as magnetoelastic effects, even in antiferromagnetic multidomain materials.

We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. The three-dimensional angular dependence of the SMR can be explained by a model considering the reversible field-induced redistribution of magnetostrictive antiferromagnetic S- and T-domains in the NiO(001), stemming from the competition between the Zeeman energy and the elastic clamping effect of the non-magnetic MgO substrate. From the observed SMR ratio, we estimate the spin mixing conductance at the NiO/Pt interface to be greater than $2\times10^{14}$ ${\Omega}^{-1}$ $m^{-2}$. Our results demonstrate the possibility to electrically detect the N\'eel vector direction in stable NiO(001) thin films, for rotations in the xy- and xz- planes. Moreover, we show that a careful subtraction of the ordinary magnetoresistance contribution is crucial to correctly estimate the amplitude of the SMR.

Antiferromagnets as active elements of spintronics can be faster than their ferromagnetic counterparts and more robust to magnetic noise. Owing to the strongly exchange-coupled magnetic sublattice structure, antiferromagnetic order parameter dynamics are qualitatively different and thus capable of engendering novel device functionalities. In this review, we discuss antiferromagnetic textures -- nanoparticles, domain walls, and skyrmions, -- under the action of different spin torques. We contrast the antiferromagnetic and ferromagnetic dynamics, with a focus on the features that can be relevant for applications., Comment: Part of a collection of reviews on antiferromagnetic spintronics

We theoretically examine a cross effect of magnetic field and charge current on antiferromagnetic domain wall dynamics. Since antiferromagnetic materials are largely insensitive to external magnetic fields in general, charge current has been shown recently as an alternative and efficient way to manipulate antiferromagnets. We find a new role of the magnetic field in the antiferromagnetic dynamics that appears when it is combined with charge current, demonstrating a domain wall motion in the presence of both field and current. We show that a spatially-varying magnetic field can shift the current-driven domain-wall velocity, depending on the domain-wall structure and the direction of the field-gradient. Our result suggests a novel concept of field-control of current-driven antiferromagnetic dynamics., Comment: 5 pages, 3 figures

In this work we focus on magnetic relaxation in Mn$_{80}$Ir$_{20}$(12 nm)/ Cu(6 nm)/ Py($d_\mathrm{F}$) antiferromagnet/Cu/ferromagnet (AFM/Cu/FM) multilayers with different thickness of the ferromagnetic permalloy layer. An effective FM-AFM interaction mediated via the conduction electrons in the nonmagnetic Cu spacer -- the spin-pumping effect -- is detected as an increase in the linewidth of the ferromagnetic resonance (FMR) spectra and a shift of the resonant magnetic field. We further find experimentally that the spin-pumping-induced contribution to the linewidth is inversely proportional to the thickness of the Py layer. We show that this thickness dependence likely originates from the dissipative dynamics of the free and localized spins in the AFM layer. The results obtained could be used for tailoring the dissipative properties of spintronic devices incorporating antiferromagnetic layers., Comment: Submitted as a conference paper to 2016 MMM Conference, to appear in AIP Advances

Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently proposed electrical manipulation with spin-orbit torques is restricted to metals with a specific crystal structure. Here we propose an alternative, broadly applicable approach: using asymmetric magnetic field pulses to induce controlled ratchet motion of AF domain walls. The efficiency of this approach is based on three peculiarities of AF dynamics. First, a time-dependent magnetic field couples with an AF order parameter stronger than a static magnetic field, which leads to higher mobility of the domain walls. Second, the rate of change of the magnetic field couples with the spatial variation of the AF order parameter inside the domain and this enables synchronous motion of multiple domain walls with the same structure. Third, tailored asymmetric field pulses in combination with static friction can prevent backward motion of domain walls and thus lead to the desired controlled ratchet effect. The proposed use of an external field, rather than internal spin-orbit torques, avoids any restrictions on size, conductivity, and crystal structure of the AF material. We believe that our approach paves a way for the development of new AF-based devices based on controlled motion of AF domain walls., Comment: 4 pages, 5 figures

We study current-driven skyrmion motion in uniaxial thin film antiferromagnets in the presence of the Dzyaloshinskii-Moriya interactions and in an external magnetic field. We phenomenologically include relaxation and current-induced torques due to both spin-orbit coupling and spatially inhomogeneous magnetic textures in the equation for the N\'eel vector of the antiferromagnet. Using the collective coordinate approach we apply the theory to a two-dimensional antiferromagnetic skyrmion and estimate the skyrmion velocity under an applied DC electric current., Comment: 14 pages, 3 figures, 1 table

Using soft x-ray spectromicroscopy, we investigate the magnetic domain structure in embedded nanomagnets defined in La$_{0.7}$Sr$_{0.3}$MnO$_3$ thin films and LaFeO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ bilayers. We find that shape-controlled antiferromagnetic domain states give rise to a significant reduction of the switching field of the rectangular nanomagnets. This is discussed in the framework of competition between an intrinsic spin-flop coupling and shape anisotropy. The data demonstrates that shape effects in antiferromagnets may be used to control the magnetic properties in nanomagnets.