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The strategy of incorporating self‐assembled monolayers (SAMs) with anchoring groups is an effective and promising method for interface engineering in perovskite solar cells with metal oxide charge‐transporting layers. However, coating SAM layers in upscaled perovskite solar modules (PSMs) using slot‐die coating is challenging due to the low viscosity and wettability of the solutions. In this study, a triphenylamine‐based polymer poly([{5‐[4‐(diphenylamino)phenyl]‐2‐thienyl}(4‐fluorophenyl)methylene]malononitrile) (pTPA)–TDP, blended with SAM based on 5‐[4‐[4‐(diphenylamino)phenyl]thiophene‐2‐carboxylic acid, is integrated to address these challenges. And, p–i–n‐oriented PSMs on 50 × 50 mm2 substrates (12 sub‐cells) are fabricated with a NiO hole‐transport layer and organic interlayers for surface modification. Wetting angle mapping shows that ununiform regions of the slot‐die‐coated SAM has extreme hydrophobicity, causing absorber thickness fluctuations and macro‐defects at buried interfaces. The blended interlayer at the NiO/perovskite junction homogenizes surface wettability and mitigates lattice strain, enabling the effective use of SAM properties on large surfaces. This improved energy level alignment, enhancing the power conversion efficiency of the modules from 13.98% to 15.83% and stability (ISOS‐L‐2, T80 period) from 500 to 1630 h. In these results, the complex effects of using SAM in slot‐die‐coating technology for large‐scale perovskite photovoltaics are highlighted. [ABSTRACT FROM AUTHOR]

Halide perovskites possess ultra-low thermal conductivity and show high potential for thermoelectric devices. The chemical properties and molecular structure of halide perovskite materials are not completely stable under ambient conditions, which hinders their use in thermoelectric generators. Changes in the properties of bulk halide perovskite thermoelectrics are accompanied by partial phase transitions and surface oxidation processes. In this paper, we conducted a comprehensive study of the transport and structural properties of CsSnI3, which were pristine by vacuum melting followed by spark plasma sintering. The research results on the electrical transport of these materials revealed that exposure to an inert atmosphere does not deteriorate stability and the properties of the materials remain unchanged. However, prolonged exposure to air leads to a significant degradation of the electrical transport properties. Contrary to thin-film samples, the shift to the double perovskite structure from the perovskite one is limited to a specific surface layer. This change significantly influences the electrical transport of the material while maintaining the essential properties of both perovskite types. [ABSTRACT FROM AUTHOR]

Large‐scale solution printing perovskite photovoltaics is one of the key technological advantages in comparison to the manufacturing of wafer‐based solar cells (Si, GaAs, etc.). Herein, all‐slot‐die‐coated perovskite solar cells (PSCs) in p–i–n (inverse) configuration with a process fully performed out of the glove box in ambient conditions are demonstrated. The successful implementation of the approach is demonstrated for devices based on the MAPbI3 and CsFAPbI3 perovskite absorbers with four slot‐die‐coated layers—NiOx/perovskite/PCBM/BCP. Noticeably, the use of Cl‐containing additives MACl and FACl in combination with vacuum quenching is found to be essential for the reproducible and controllable crystallization of the perovskite films. Moreover, vacuum quenching shows beneficial results also for the morphology of thin electron transporting layers—PCBM (40 nm) and BCP (11 nm). Finally, the power conversion efficiency (PCE) of the all‐slot‐die‐coated PSCs reaches the level of >16% for MAPbI3 and >17% for CsFAPbI3‐based devices. Slot‐die coating fabrication is successfully upscaled for minimodules (total active area 2.1 cm2), which demonstrates up to 14.9% of PCE. This result demonstrates the high potential of the slot‐die printing for sheet‐to‐sheet fabrication of PSCs and unravels the specifics for each functional layer in the p–i–n device. [ABSTRACT FROM AUTHOR]