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Device-grade TlBr was subjected to various chemical treatments used in room temperature radiation detector fabrication to determine the resulting surface composition and electronic structure. As-polished TlBr was treated separately with HCl, SOCl2, Br:MeOH, and HF solutions. High-resolution photoemission measurements on the valence band electronic structure and Tl 4f, Br 3d, Cl 2p, and S 2p core lines were used to evaluate surface chemistry and shallow heterojunction formation. Surface chemistry and valence band electronic structure were correlated with the goal of optimizing the long-term stability and radiation response. [ABSTRACT FROM AUTHOR]

Cd0.46Zn0.04Te.50 crystals have been exposed to high density Ar plasmas in order to modify the surface chemistry and control the surface conductivity. X-ray photoelectron spectroscopy reveals that this bombardment results in a modified surface atomic ratio, with Cd being preferentially removed compared to Te. In addition, the native oxide is removed and suppressed for an extended period of time. Current-voltage data is analyzed in order to determine the effect on surface leakage current after exposure. It is found that surface leakage current can be decreased by approximately 2.5 orders of magnitude following Ar+ bombardment. [ABSTRACT FROM AUTHOR]

Isotopically enriched 10boron for use in pillar-structured neutron detectors was successfully etched in an electron cyclotron resonance (ECR) plasma using SF6-based plasmas. The effects of radio frequency (RF) power, ECR power, gas flow rate, H2 and O2 incorporation into the plasma, and gas mixture ratios were examined. Etch rates up to approximately 1.35 μm/min were realized. In addition, etch morphology was examined, and the final shape of 10boron-coated pillars could be controlled through the etch gas mixture utilized. Selectivity to the underlying Si structure was apparent from scanning electron microscopy (SEM) micrographs of completed etches. [ABSTRACT FROM AUTHOR]

Current helium-3 tube based thermal neutron detectors have shortcomings in achieving simultaneously high efficiency and low voltage while maintaining adequate fieldability performance. By using a three-dimensional silicon p-i-n diode pillar array filled with boron-10 these constraints can be overcome. The fabricated pillar structured detector reported here is composed of 2 μm diameter silicon pillars with a 4 μm pitch and height of 12 μm. A thermal neutron detection efficiency of 7.3+/-0.6% and a neutron-to-gamma discrimination of 105 at 2 V reverse bias were measured for this detector. When scaled to larger aspect ratio, a high efficiency device is possible. [ABSTRACT FROM AUTHOR]