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2. Resolving the structure of the striped Ge layer on Ag(111): Ag$_2$Ge surface alloy with alternate fcc and hcp domains

Author

Zhang, K., Sciacca, D., Coati, A., Bernard, R., Borensztein, Yves, Diener, P., Grandidier, B., Lefebvre, I., Derivaz, M., Pirri, C., and Prévot, Geoffroy

Subjects
Condensed Matter - Materials Science
Abstract

Two-dimensional (2D) honeycomb lattices beyond graphene, such as germanene, promise new physical properties such as quantum spin Hall effect. While there have been many claims of growth of germanene, the lack of precise structural characterization of the epitaxial layers synthesized hinders further research. The striped layer formed by Ge deposition on Ag(111) has been recently ascribed as a stretched germanene layer. Using surface X-ray diffraction and density functional theory calculations, we demonstrate that it corresponds in fact to a Ag$_2$Ge surface alloy with an atomic density 6.45% higher than the Ag(111) atomic density. The overall structure is formed by stripes associated with a face-centered cubic top-layer alignment, alternating with stripes associated with an hexagonal-close-packed top-layer alignment, in great analogy with the ($22\times\sqrt3$) Au(111) reconstruction.

Published
2021
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8. Molecular beam epitaxy of TaSe2 on GaP(111)B

Author

Sthioul, C., Koussir, H., Chernukha, Y., Chapuis, N., Haber, E., Coinon, Christophe, Diener, Pascale, Grandidier, B., Wallart, Xavier, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Physique - IEMN (PHYSIQUE - IEMN), NANODYN - ANR-21-CE24-0001 AAPG2021 - 2021TUNNE2D - ANR-21-CE24-0030 AAPG2021 - 2021, Renatech Network, PCMP PCP, CMNF, ANR-21-CE24-0030,TUNNE2D,Diodes tunnel miniaturisables à base de matériaux 2D(2021), and ANR-21-CE24-0001,NANODYN,Transition de Mott hors équilibre pour la Nanoélectronique(2021)

Subjects
[PHYS]Physics [physics], TaSe2, GaP(111)B, [SPI]Engineering Sciences [physics], Molecular beam epitaxy
Abstract

National audience

Published
2023

11. Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy

Author

Peric, Nemanja, primary, Durand, Corentin, additional, Berthe, Maxime, additional, Lu, Yan, additional, N'Konou, Kekeli, additional, Coratger, Roland, additional, Lefebvre, Isabelle, additional, Ebert, Philipp, additional, Biadala, Louis, additional, Desplanque, Ludovic, additional, Wallart, Xavier, additional, and Grandidier, B., additional

Published
2022
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13. Characterization of electron transport inside InAs/GaSb quantum nanostructures using four probe scanning tunnelling microscopy

Author

Khelifi, Wijden, Berthe, Maxime, Coinon, Christophe, Grandidier, B., Desplanque, L., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), Physique - IEMN (PHYSIQUE - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), PCMP PCP, Renatech Network, C'Nano Nord-Ouest, and CMNF

Subjects
stomatognathic diseases, [SPI]Engineering Sciences [physics]
Abstract

oral; National audience

Published
2022

14. Charge carriers dynamics in LT-GaAs/GaAs junction

Author

Chernukha, Yevheniia, Berthe, Maxime, Grandidier, B., Diener, Pascale, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Physique - IEMN (PHYSIQUE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), PCMP PCP, and Renatech Network

Subjects
[SPI]Engineering Sciences [physics], ComputingMethodologies_GENERAL, ComputingMilieux_MISCELLANEOUS
Abstract

poster; National audience

Published
2022

15. Sonder les phénomènes physiques avec la résolution spatiale et temporelle

Author

Berthe, Maxime, Chernukha, Yevheniia, Canneson, Damien, Diener, Pascale, Biadala, Louis, Grandidier, B., Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Physique - IEMN (PHYSIQUE - IEMN), PCMP PCP, and Renatech Network

Subjects
stomatognathic diseases, [SPI]Engineering Sciences [physics]
Abstract

oral; National audience

Published
2022

16. Electric field driven insulator-to-metal transition in GaMo4S8 studied with the Nanoprobe

Author

Koussir, Houda, Chernukha, Yevheniia, Berthe, Maxime, Lefebvre, Isabelle, Grandidier, B., Diener, Pascale, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Physique - IEMN (PHYSIQUE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), PCMP PCP, and Renatech Network

Subjects
stomatognathic diseases, [SPI]Engineering Sciences [physics]
Abstract

oral; National audience

Published
2022

20. Electronic properties of selective area grown semiconductor heterostructures

Author

Peric, N., Durand, Corentin, Biadala, Louis, Berthe, Maxime, Desplanque, L., Dubrovskii, V., Wallart, X., Grandidier, B., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Physique - IEMN (PHYSIQUE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Surfaces, Interfaces et Nano-Objets (CEMES-SINanO), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), St Petersburg State University (SPbU), PCMP PCP, and Renatech Network

Subjects
[SPI]Engineering Sciences [physics]
Abstract

Poster P9-08; National audience

Published
2021

21. Electric field driven out of equilibrium insulator to metal transition in Mott insulators

Author

Diener, Pascale, Koussir, H., Chernukha, Y., Lefebvre, Isabelle, Berthe, Maxime, Grandidier, B., Corraze, Benoit, Tranchant, J., Janod, Etienne, Cario, Laurent, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), PCMP PCP, and Renatech Network

Subjects
stomatognathic diseases, [SPI]Engineering Sciences [physics]
Abstract

oral; National audience

Published
2021

22. Nanoprobe study of the electric field driven insulator-to-metal transition in GaMo4S8

Author

Koussir, H., Lefebvre, Isabelle, Berthe, Maxime, Grandidier, B., Diener, Pascale, Tranchant, J., Corraze, Benoit, Janod, Etienne, Cario, Laurent, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Institut des Matériaux Jean Rouxel (IMN), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Nantes université - UFR des Sciences et des Techniques (Nantes univ - UFR ST), Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - Ecole Polytechnique de l'Université de Nantes (Nantes Univ - EPUN), Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), This work was supported by the RENATECH network, I-SITE ULNE (R-20-004), Hauts-deFrance region and the French National Research Agency (ANR-21-CE24-0001-01), PCMP PCP, and Renatech Network

Subjects
[SPI]Engineering Sciences [physics]
Abstract

Poster P9-06; National audience; The resistive switching observed under electric pulses in Mott materials has a high potential for micro and nanoelectronics. Here we report on the study of the resistive switching observed at the surface of single crystals of the canonical Mott semiconductor GaMo4S8. The study is made using a multiprobe setup with 4 nanopositionable tips under the supervision of a high resolution scanning electron microscop. We find a resistivity of 38 Ω.cm by four-point probe measurements, in agreement with the literature. The volatile insulator to metal transition is studied with a two probes configuration for interelectrode distances varying between 4 and 200 microns. Finite element simulations are performed to determine the spatial distribution of the electric field prior to the transition. Our results are in agreement with i) an intrinsic voltage threshold of 60 mV independent of the interelectrode distance ii) a maximum electric field close to the electrodes and iii) a threshold electric field of 0.2 kV/cm.

Published
2021

23. Resolving the structure of the striped Ge layer on Ag ( 111 ) : Ag 2 Ge surface alloy with alternate fcc and hcp domains

Author

Zhang, K., Sciacca, D., Coati, A., Bernard, R., Borensztein, Yves, Diener, P., Grandidier, B., Lefebvre, Isabelle, Derivaz, M., Pirri, C., Prévot, Geoffroy, Physico-chimie et dynamique des surfaces (INSP-E6), Institut des Nanosciences de Paris (INSP), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), Physique - IEMN (PHYSIQUE - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Institut des Biomolécules Max Mousseron [Pôle Chimie Balard] (IBMM), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Institut de Chimie du CNRS (INC)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut de Science des Matériaux de Mulhouse (IS2M), Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Chinese Scholarship Council (CSC Contract No. 201808070070), This study is financially supported by the French National Research Agency (Germanene Project No. ANR-17-CE09-0021-03), Renatech Network, PCMP PCP, ANR-17-CE09-0021,GERMANENE,Croissance de germanene sur substrats à bande interdite(2017), Borensztein, Yves, Croissance de germanene sur substrats à bande interdite - - GERMANENE2017 - ANR-17-CE09-0021 - AAPG2017 - VALID, Centre National de la Recherche Scientifique (CNRS)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, and Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)

Subjects
[PHYS.COND.CM-GEN] Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

International audience; Two-dimensional (2D) honeycomb lattices beyond graphene, such as germanene, promise new physical properties such as quantum spin Hall effect. While there have been many claims of growth of germanene, the lack of precise structural characterization of the epitaxial layers synthesized hinders further research. The striped layer formed by Ge deposition on Ag(111) has been recently ascribed as a stretched germanene layer. Using surface X-ray diffraction and density functional theory calculations, we demonstrate that it corresponds in fact to a Ag2Ge surface alloy with an atomic density 6.45% higher than the Ag(111) atomic density. The overall structure is formed by stripes associated with a face-centered cubic top-layer alignment, alternating with stripes associated with an hexagonal-close-packed top-layer alignment, in great analogy with the (22×√3) Au(111) reconstruction.

Published
2021
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25. List of contributors

Author

Arbiol, J., primary, Bescond, M., additional, Calarco, R., additional, Chen, W., additional, Chèze, C., additional, Dai, X., additional, Dayeh, S.A., additional, den Hertog, Martien Ilse, additional, Dick, K.A., additional, Dogan, P., additional, Erhard, N., additional, Grandidier, B., additional, Holleitner, A., additional, Li, Luying, additional, Liu, B., additional, Mai, L.Q., additional, Miao, J., additional, Murray, G., additional, Olivier, A., additional, Pan, A., additional, Pareige, P., additional, Paul, M., additional, Peng, Lele, additional, Phillips, M.R., additional, Shi, Ye, additional, Soci, C., additional, Thony, P., additional, Tian, B., additional, Ton-That, C., additional, Tong, L., additional, Utama, M.I.B., additional, Wang, Qu-Quan, additional, Wilhelm, C., additional, Xin, C., additional, Xiong, Q.H., additional, Xu, T., additional, Yu, H., additional, Yu, Guihua, additional, Zhang, Anqi, additional, Zhang, Q., additional, Zheng, Gengfeng, additional, Zhou, Li, additional, and Zhu, X., additional

Published
2015
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28. Direct measurement of band offsets on selective area grown In0.53Ga0.47As/InP heterojunction with multiple probe scanning tunneling microscopy.

Author

Peric, Nemanja, Durand, Corentin, Berthe, Maxime, Lu, Yan, N'Konou, Kekeli, Coratger, Roland, Lefebvre, Isabelle, Ebert, Philipp, Biadala, Louis, Desplanque, Ludovic, Wallart, Xavier, and Grandidier, B.

Subjects
SCANNING tunneling microscopy, SCANNING probe microscopy, HETEROJUNCTIONS, TUNNELING spectroscopy, NANOWIRES, CONDUCTION bands, VALENCE bands, HETEROSTRUCTURES
Abstract

The knowledge of the band alignment in semiconductor heterostructures is crucial, as it governs carrier confinement with many impacts on the performances of devices. By controlling the direction of the current flow in in-plane In0.53Ga0.47As/InP heterostructure nanowires, either horizontally along the nanowires or vertically into the InP substrate with low temperature multiple-probe tunneling spectroscopy, a direct measurement of the band offsets at the buried In0.53Ga0.47As/InP heterointerface is performed. Despite the unavoidable processing steps involved in selective area epitaxy, conduction and valence band offsets of 0.21 ± 0.01 and 0.40 ± 0.01 eV are, respectively, found, indicating the formation of an interface with a quality comparable to two-dimensional In0.53Ga0.47As/InP heterostructures. [ABSTRACT FROM AUTHOR]

Published
2022
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29. Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

Author

Vergel, N. A.Franchina, Post, C., Vaurette, F., Lambert, Y., Yarekha, D., Coinon, C., Fleury, G., Kulmala, T. S., Xu, T., Desplanque, L., Wallart, X., Vanmaekelbergh, D., Delerue, C., Grandidier, B., Vergel, N. A.Franchina, Post, C., Vaurette, F., Lambert, Y., Yarekha, D., Coinon, C., Fleury, G., Kulmala, T. S., Xu, T., Desplanque, L., Wallart, X., Vanmaekelbergh, D., Delerue, C., and Grandidier, B.

Abstract

Building two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands. Here, we compare three lithographic patterning methods, e-beam lithography, block copolymer lithography and thermal scanning probe lithography to produce a honeycomb lattice in an In0.53Ga0.47As quantum well. We weigh up the pros and cons of each method to reach lattice constants smaller than 20 nm with a minimum of dispersion in the pore size.

Published
2021

30. Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

Author

Vergel, N.A. Franchina, primary, Post, C., additional, Vaurette, F., additional, Lambert, Y., additional, Yarekha, D., additional, Coinon, C., additional, Fleury, G., additional, Kulmala, T.S., additional, Xu, T., additional, Desplanque, L., additional, Wallart, X., additional, Vanmaekelbergh, D., additional, Delerue, C., additional, and Grandidier, B., additional

Published
2021
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32. Assessing the insulating properties of an ultrathin SrTiO3 shell grown around GaAs nanowires with molecular beam epitaxy.

Author

Peric, N, Dursap, T, Becdelievre, J, Berthe, M, Addad, A, Romeo, P Rojo, Bachelet, R, Saint-Girons, G, Lancry, O, Legendre, S, Biadala, L, Penuelas, J, and Grandidier, B

Subjects
MOLECULAR beam epitaxy, NANOWIRES, SCANNING tunneling microscopy, RAMAN microscopy, AUDITING standards, TRANSMISSION electron microscopy
Abstract

We have studied electronic transport in undoped GaAs/SrTiO3 coreâ€"shell nanowires standing on their Si substrate with two-tip scanning tunneling microscopy in ultrahigh vacuum. The resistance profile along the nanowires is proportional to the tip separation with resistances per unit length of a few GΩ/ ÎĽ m. Examination of the different transport pathways parallel to the nanowire growth axis reveals that the measured resistance is consistent with a conduction along the interfacial states at the GaAs{110} sidewalls, the 2 nm thick SrTiO3 shell being as much as resistive, despite oxygen deficient growth conditions. The origin of the shell resistivity is discussed in light of the nanowire analysis with transmission electron microscopy and Raman spectroscopy, providing good grounds for the use of SrTiO3 shells as gate insulators. [ABSTRACT FROM AUTHOR]

Published
2022
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36. Bandes plates et cônes de Dirac dans des réseaux électroniques artificiels en nids d’abeilles

Author

Delerue, Christophe, Franchina Vergel, Nathali, Post, L. Christiaan, Tadjine, Athmane, Lambert, Yannick, Vaurette, Francois, Desplanque, Ludovic, Wallart, X., Stiévenard, Didier, Boneschanscher, M.P., Peters, J.L., Alimoradi Jazi, Maryam, Gardenier, Thomas, Van Den Broeke, Jette, Moes, J.R., Swart, Ingmar, Morais Smith, Cristiane, Grandidier, B., Vanmaekelbergh, Daniel, Physique - IEMN (PHYSIQUE - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Debye Institute for Nanomaterials Science, Utrecht University [Utrecht], Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN), Institute for Theoretical Physics [Utrecht], and Renatech Network

Subjects
[SPI]Engineering Sciences [physics], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2020

37. Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on p-type doped InP(001)

Author

Franchina Vergel, Nathali Alexandra, Tadjine, A., Notot, V., Mohr, M., Kouassi N’guissan, A., Coinon, Christophe, Berthe, Maxime, Biadala, Louis, Sossoe, K., Dzagli, M., Girard, J.-C., Rodary, Guillemin, Desplanque, L., Berndt, R., Stievenard, D., Wallart, X., Delerue, Christophe, Grandidier, B., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centrale de Micro Nano Fabrication - IEMN (CMNF-IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique-IEMN (PHYSIQUE-IEMN), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut für Experimentelle und Angewandte Physik [Kiel] (IEAP), Christian-Albrechts-Universität zu Kiel (CAU), ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), ANR-16-CE24-0007,Dirac-III-V,Super-réseau d'antipoints de Dirac pour les électrons dans les semiconducteurs III-V(2016), ANR-17-CE24-0024,MechaSpin,Positionnement à l'échelle atomique et contrôle cohérent mécanique du spin d'un atome magnétique(2017), Physique - IEMN (PHYSIQUE - IEMN), Centrale de Micro Nano Fabrication - IEMN (CMNF - IEMN), and EPItaxie et PHYsique des hétérostructures - IEMN (EPIPHY - IEMN)

Subjects
[PHYS]Physics [physics], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Abstract

International audience; A steplike density of states is the hallmark of a two-dimensional electron gas. Here, scanning tunneling spectroscopy is used to investigate this property in the differential conductance of an In0.53Ga0.47As quantum well grown on p-type doped InP(001). We show that the appearance of a steplike function in the conduction band strongly depends on both the hole concentration in the quantum well and the current injected into the quantized states. Based on four-point probe transport measurements and tunneling-induced light-emission spectroscopy, we discuss the physical mechanisms at the origin of the current and unveil the significant contribution of midgap surface states in the relaxation of the tunneling electrons. These surface states, via pinning of the Fermi level, also affect the potential landscape across the quantum well, as demonstrated by tight-binding calculations of the quantum well electronic structure.

Published
2019
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38. Supramolecular self-assembly on semiconductor surfaces and outlook

Author

Younes Makoudi, Frank Palmino, Frédéric Cherioux, Christophe Krzeminski, Fabrizio Cleri, Grandidier, B., Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), and Physique-IEMN (PHYSIQUE-IEMN)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; While spectacular molecular networks have been assembled on metal surfaces and then observed with scanning tunneling microscopy, there have been fewer studies of supramolecular networks on semiconductor surfaces, due to the high reactivity of their dangling bonds with organics. However, the saturation of the dangling bonds is known to make them inert and offers a unique way for the engineering of molecular patterns on these surfaces. In this talk, I will review a few examples of supramolecular networks on the passivated B-Si(111)-(3x3) R30° surface as a function of the molecule geometries and moieties. With the help of theoretical simulations, I will insist on the relative importance of the molecule-substrate and molecule-molecule interactions that give rise to several types of arrangements depending on the growth conditions. Based on the different packings that can be obtained, I will provide directions for the potential utility of these molecular-semiconductor interfaces.

Published
2019

39. Composition modulation by twinning in InAsSb nanowires Composition modulation by twinning in InAsSb nanowires

Author

SCHNEDLER, M., Xu, T, Portz, V, Nys, J-P, Plissard, S.R., Berthe, Maxime, Eisele, H, Dunin-Borkowski, R, Ebert, P, Grandidier, B, Peter Grünberg Institute, Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association-Helmholtz-Gemeinschaft = Helmholtz Association, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), University of Shanghai [Shanghai], Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Technical University of Berlin / Technische Universität Berlin (TU), AcknowledgmentsThe authors thank P Caroff for the growth of the nanowires.This study was financially supported by the European Communityʼs Horizon H2020 Program (Grant No. PITN-GA-2016-722176, ‘Indeed’ Project), the EQUIPEX program Excelsior(Grant No. ANR-11-EQPX-0015), the RENATECH network,and the Deutsche Forschungsgemeinschaft (DFG, GermanResearch Foundation) (Grant No. 390247238)., RENATECH network, ANR-11-EQPX-0015,Excelsior,Centre expérimental pour l'étude des propriétés des nanodispositifs dans un large spectre du DC au moyen Infra-rouge.(2011), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Technische Universität Berlin (TU), and Physique-IEMN (PHYSIQUE-IEMN)

Subjects
ternary III-V compounds, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], composition modulation, ternary III–V compounds, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.CRIS]Chemical Sciences/Cristallography, twin boundaries, scanning tunneling microscopy, [CHIM.MATE]Chemical Sciences/Material chemistry, semiconductor nanowires
Abstract

International audience; We observe a composition modulated axial heterostructure in zincblende (ZB) InAs 0.90 Sb 0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I.

Published
2019
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41. Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors

Author

Post, L C, Xu, T, Franchina Vergel, N A, Tadjine, A, Lambert, Y, Vaurette, F, Yarekha, D, Desplanque, L, Stiévenard, D, Wallart, X, Grandidier, B, Delerue, C, Vanmaekelbergh, D, Post, L C, Xu, T, Franchina Vergel, N A, Tadjine, A, Lambert, Y, Vaurette, F, Yarekha, D, Desplanque, L, Stiévenard, D, Wallart, X, Grandidier, B, Delerue, C, and Vanmaekelbergh, D

Abstract

The design of two-dimensional periodic structures at the nanoscale has renewed attention for band structure engineering. Here, we investigate the nanoperforation of InGaAs quantum wells epitaxially grown on InP substrates using high-resolution e-beam lithography and highly plasma based dry etching. We report on the fabrication of a honeycomb structure with an effective lattice constant down to 23 nm by realising triangular antidot lattice with an ultimate periodicity of 40 nm in a 10 nm thick InGaAs quantum well on a p-type InP. The quality of the honeycomb structures is discussed in detail, and calculations show the possibility to measure Dirac physics in these type of samples. Based on the statistical analysis of the fluctuations in pore size and periodicity, calculations of the band structure are performed to assess the robustness of the Dirac cones with respect to distortions of the honeycomb lattice.

Published
2019

43. Chemical nature of the Anion antisite in dilute Phosphide GaAs1-(x)P(x) alloy grown at low temperature

Author

Demonchaux, T., Sossoe, K. K., Schnedler, Michael, Coinon, C., Lefebvre, I., Mohou, M. A., Stiévenard, D., Lampin, J. F., Ebert, Philipp, Wallart, X., Grandidier, B., Dzagli, M. M., Nys, J. P., Berthe, M., Troadec, D., Addad, A., Veillerot, M., Patriarche, G., and von Bardeleben, H. J.

Subjects
ddc:530
Abstract

While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sectional scanning tunneling microscopy (STM), we investigate low-temperature-grown dilute GaAs1−xPx alloys. High concentrations of negatively charged point defects are found. Combined with transmission electron microscopy and pump-probe transient reflectivity, this study shows that the defects have a behavior similar to the group-V antisites. Further analyses with x-ray diffraction point to the preferential incorporation of arsenic antisites, consistent with ab initio calculations, that yield a formation energy 0.83 eV lower than for phosphorus antisites. Although the negative charge carried by the arsenic antisites in the STM images is shown to be induced by the proximity of the STM tip, the arsenic antisites are not randomly distributed in the alloy, providing insight into the evolution of their charge state during the growth.

Published
2018
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44. Shallow Heavily Doped n\mathplus\mathplus Germanium by Organo-Antimony Monolayer Doping

Author

Alphazan, Thibault, Álvarez, Adrian Díaz, Martin, François, Grampeix, Helen, Enyedi, Virginie, Martinez, Eugénie, Rochat, Névine, Veillerot, Marc, Dewitte, Marc, Nys, Jean-Philippe, Berthe, Maxime, Stiévenard, Didier, Thieuleux, Chloé, Grandidier, B., Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Chimie, Catalyse, Polymères et Procédés, R 5265 (C2P2), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre National de la Recherche Scientifique (CNRS)-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC), and Physique-IEMN (PHYSIQUE-IEMN)

Subjects
[CHIM]Chemical Sciences
Abstract

International audience; Functionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO2 overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 1020 cm–3. Microscopic four-point probe measurements and photoconductivity experiments show the full electrical activation of the Sb dopants, giving rise to the formation of an n++ Sb-doped layer and an enhanced local field-effect passivation at the surface of the Ge wafer.

Published
2017
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45. Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III–V semiconductors

Author

Post, L C, primary, Xu, T, additional, Franchina Vergel, N A, additional, Tadjine, A, additional, Lambert, Y, additional, Vaurette, F, additional, Yarekha, D, additional, Desplanque, L, additional, Stiévenard, D, additional, Wallart, X, additional, Grandidier, B, additional, Delerue, C, additional, and Vanmaekelbergh, D, additional

Published
2019
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46. Correction: Transport mechanisms in a puckered graphene-on-lattice

Author

Xu, T., primary, Díaz Álvarez, A., additional, Wei, W., additional, Eschimese, D., additional, Brillard, C., additional, Eliet, S., additional, Lancry, O., additional, Galopin, E., additional, Vaurette, F., additional, Berthe, M., additional, Desremes, D., additional, Wei, B., additional, Xu, J., additional, Lampin, J. F., additional, Pallecchi, E., additional, Happy, H., additional, Vignaud, D., additional, and Grandidier, B., additional

Published
2019
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47. Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Author

Demonchaux, T., primary, Sossoe, K. K., additional, Dzagli, M. M., additional, Nys, J. P., additional, Berthe, M., additional, Troadec, D., additional, Addad, A., additional, Veillerot, M., additional, Patriarche, G., additional, von Bardeleben, H. J., additional, Schnedler, M., additional, Coinon, C., additional, Lefebvre, I., additional, Mohou, M. A., additional, Stiévenard, D., additional, Lampin, J. F., additional, Ebert, Ph., additional, Wallart, X., additional, and Grandidier, B., additional

Published
2018
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48. Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage.

Author

Chen, W. H., Lardé, R., Cadel, E., Xu, T., Grandidier, B., Nys, J. P., Stiévenard, D., and Pareige, P.

Subjects
PHYSICS research, SEMICONDUCTORS, NANOWIRES, NANOSTRUCTURED materials, VAPOR-plating, CATALYSTS, ELECTRON-hole droplets
Abstract

We investigated the growth of silicon nanowires from Au-rich catalyst droplets by two different methods: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). The growth rate is found to be diameter-dependent and increases with increasing precursor partial pressures. The comparison of the experimental results with models shows that the contribution of Si atoms that diffuses from the substrate and the NW sidewalls toward the catalyst droplet can be neglected in CVD for the different pressures used in this study, whereas it is the major source of Si supply for the MBE growth. In addition, by decreasing the number density of catalyst droplet prior to the NW growth in CVD, it is also found that this parameter affects the NWs morphology, increasing the tapering effect when the silane partial pressure is small enough to allow gold atom diffusion from the catalyst droplet. [ABSTRACT FROM AUTHOR]

Published
2010
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49. Electron-phonon coupling and intervalley splitting determine the linewidth of single-electron transport through PbSe nanocrystals.

Author

Overgaag, K., Vanmaekelbergh, D., Liljeroth, P., Mahieu, G., Grandidier, B., Delerue, C., and Allan, G.

Subjects
ELECTRON-phonon interactions, COUPLING constants, MAGNETIC coupling, ELECTRON transport, FREE electron theory of metals, QUANTUM tunneling
Abstract

The linewidth of the resonances in the single-electron tunneling spectra has been investigated for PbSe semiconductor nanocrystals (NCs) with scanning tunneling spectroscopy at low temperature. The linewidth of the resonances corresponding to tunneling through the first conduction and valence levels is found to increase with decreasing size of the NCs. Based on theoretical calculations, this broadening is mainly induced by the coupling between the tunneling electrons and the longitudinal optical phonon mode of the NC, and by the splitting of the degenerate electronic levels between the different L-valleys in the Brillouin zone. For the smallest sizes, it is shown that the intervalley splitting is the major source of broadening. [ABSTRACT FROM AUTHOR]

Published
2009
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