705 results on '"Grasser, T."'
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2. Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators
3. Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors
4. Crystalline insulators for scalable 2D nanoelectronics
5. Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses
6. Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators.
7. Insulators for Devices Based on 2D Materials
8. Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors
9. Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs
10. Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors.
11. Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
12. Comphy — A compact-physics framework for unified modeling of BTI
13. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
14. Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs
15. Analysis of the Features of Hot-Carrier Degradation in FinFETs
16. A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays
17. The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits
18. Recent Trends in Bias Temperature Instability
19. Materials and Design study of thermoplastic composite pipes for liquid hydrogen distribution in aviation
20. Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors
21. Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs
22. TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures
23. Impact of Single Defects on NBTI and PBTI Recovery in SiO2 Transistors
24. A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation
25. Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models
26. Modeling of Macroscopic Transport Parameters in Inversion Layers
27. First-Principles Investigation on Oxide Trapping
28. Gate current random telegraph noise and single defect conduction
29. Superior reliability of high mobility (Si)Ge channel pMOSFETs
30. The Importance of Secondary Generated Carriers in Modeling of Full Bias Space
31. Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors
32. Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation
33. The Evolution of the Resistance and Current Density During Electromigration
34. Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices
35. On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models
36. Advanced Transport Models for Sub-Micrometer Devices
37. A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization
38. TCAD Analysis of Gain Cell Retention Time for SRAM Applications
39. Boundary Condition Models for Terminal Current Fluctuations
40. Investigation of Spurious Velocity Overshoot Using Monte Carlo Data
41. An Impact Ionization Model Including Non-Maxwellian And Non-Parabolicity Effects
42. Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devices
43. Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric
44. Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOS
45. Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacks
46. A Physically-Based Electron Mobility Model for Silicon Device Simulation
47. Hydrodynamic Mixed-Mode Simulation
48. Device Simulator Calibration for Quartermicron CMOS Devices
49. Highly-stable black phosphorus field-effect transistors with low density of oxide traps
50. Temperature and voltage dependences of the capture and emission times of individual traps in high-k dielectrics
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