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Roll-to-roll (R2R) device fabrication using solution-processed materials is a cheap and versatile approach that has attracted widespread interest over the past 2 decades. Here, we systematically introduce and investigate R2R-friendly modifications in the fabrication of ultrathin, sintered CdTe nanocrystal (NC) solar cells. These include (1) scalable deposition techniques such as spray-coating and doctor-blading, (2) a bath-free, controllable sintering of CdTe NCs by quantitative addition of a sintering agent, and (3) radiative heating with an infrared lamp. The impact of each modification on the CdTe nanostructure and solar cell performance was first independently studied and compared to the standard, non-R2R-friendly procedure involving spin-coating the NCs, soaking in a CdCl2 bath, and annealing on a hot plate. The R2R-friendly techniques were then combined into a single, integrated process, yielding devices that reach 10.4% power conversion efficiency with a Voc, Jsc, and FF of 697 mV, 22.2 mA/cm2, and 67%, respectively, after current/light soaking. These advances reduce the barrier for large-scale manufacturing of solution-processed, ultralow-cost solar cells on flexible or curved substrates.

Nonradiative Auger recombination in multiply excited nanocrystals is a dominant efficiency loss pathway for nanocrystal-containing optoelectronic devices that rely on high-rate emission and absorpt...

The electrode processing conditions of silicon-based composite anodes play a pivotal role in the resulting interfacial chemical speciation and, thus, the electrochemical cycling behavior of the ele...

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device. Whether band bending is intrinsic to CQD solids, i.e. is band bending present at the surface-vacuum interface, has previously been unanswered. Here we use photoemission surface photovoltage measurements to show that depletion regions are present at the surface of n and p-type CQD solids with various ligand treatments (EDT, MPA, PbI2, MAI/PbI2). Using laser-pump photoemission-probe time-resolved measurements, we show that the timescale of carrier dynamics in the surface of CQD solids can vary over at least 6 orders of magnitude, with the fastest dynamics on the order of microseconds in PbS-MAI/PbI2 solids and on the order of seconds for PbS-MPA and PbS-PbI2. By investigating the surface chemistry of the solids, we find a correlation between the carrier dynamics timescales and the presence of oxygen contaminants, which we suggest are responsible for the slower dynamics due to deep trap formation.

Development of energy dense aqueous redox flow batteries is held back by high cost, chemical instability of highly soluble active compounds, or solubility limits of more suitable active materials. Here, we study solubilizing effects of inexpensive polar additives on metal-organic chelates based on aminopolycarboxylate ligands, a particularly promising family of compounds for application in negative electrolytes in near neutral pH aqueous flow batteries with demonstrated discharge voltages as high as 2.1 V.[1] Upon addition of certain additives, cation-dependent solubilities of chromium 1,3-propylenediaminetetraacetate (CrPDTA) and chromium ethylenediaminetetraacetate (CrEDTA) salts are enhanced by 60% and 125%, respectively, resulting in maximum solubilities of e.g., 1.5 м for KCrPDTA and 2.2 м for NaCrEDTA. We elucidate the mechanism behind enhanced solubility of aminopolycarboxylate chelates and study the impact of the additive on the electrochemical performance of near neutral pH flow batteries, demonstrating 50% higher anolyte capacities, up to 40 Ah L−1, than previously reported for this class of materials. In capacity balanced full cells, using ferrocyanide catholytes, we observe excellent Coulombic efficiencies >99.6% and voltage efficiencies >78% at average discharge voltages of ca. 1.5 V when cycling at 100 mA cm−2. Peak discharge power densities of >400 mW cm−2 further highlight the potential of our facile and cost-effective approach. Finally, we discuss avenues for future work to further exploit the solubilizing effect described herein. References: [1] B.H. Robb, J.M. Farrell, M.P. Marshak, Chelated chromium electrolyte enabling high-voltage aqueous flow batteries, Joule 2019, 3, 2503–2512.

Organic monolayers of epoxy-containing oligo(ethylene oxide)s were grafted to the surface of silicon nanoparticles via a hydrosilylation reaction. The surface functional groups suppressed the chemi...

Band offsets at the back contact and front window layer in CdTe-based solar cells affect photovoltaic performance and challenge standard characterization methods. By analyzing the temperature and excitation dependence of both open circuit voltage and absolute photoluminescence intensity, we show that the effects band offsets can be separated from the effects of recombination and shunting. Solar cells were grown with MgZnO window layers and compared to cells with CdS window layers containing varying amounts of oxygen. It was demonstrated that band alignment rather than reduced recombination velocity is the reason for the success of MgZnO as a front interface contact. An assortment of thin back contact interlayers were also deposited, and a PbTe interlayer showed some promise as an Ohmic contact to the CdTe, though it appears to induce a photoconductive shunt. Finally, we show that the shunting resistance given by a standard current-voltage curve technique generally does not represent a physically meaningful quantity unless it is well below one kiloOhm square cm.

Surface characterization is crucial for understanding how the atomic-level structure affects the chemical and photophysical properties of semiconducting nanoparticles (NPs). Solid-state nuclear magnetic resonance spectroscopy (NMR) is potentially a powerful technique for the characterization of the surface of NPs, but it is hindered by poor sensitivity. Dynamic nuclear polarization surface enhanced NMR spectroscopy (DNP SENS) has previously been demonstrated to enhance the sensitivity of surface-selective solid-state NMR experiments by 1-2 orders of magnitude. Established sample preparations for DNP SENS experiments on NPs require the dilution of the NPs on mesoporous silica. Using hexagonal boron nitride (h-BN) to disperse the NPs doubles DNP enhancements and absolute sensitivity in comparison to standard protocols with mesoporous silica. Alternatively, precipitating the NPs as powders, mixing them with h-BN, and then impregnating the powdered mixture with radical solution leads to further 4-fold sensitivity enhancements by increasing the concentration of NPs in the final sample. This modified procedure provides a factor of 9 improvement in NMR sensitivity in comparison to previously established DNP SENS procedures, enabling challenging homonuclear and heteronuclear 2D NMR experiments on CdS, Si, and Cd3P2 NPs. These experiments allow NMR signals from the surface, subsurface, and core sites to be observed and assigned. For example, we demonstrate the acquisition of DNP-enhanced 2D 113Cd-113Cd correlation NMR experiments on CdS NPs and natural isotropic abundance 2D 13C-29Si HETCOR of functionalized Si NPs. These experiments provide a critical understanding of NP surface structures.

We report on the successful creation of nonthermal plasma-synthesized phorphorus and boron co-doped Si nanocrystals (PB:Si NCs) with diameters (DNC) ranging from 2.9 to 7.3 nm. Peak photoluminescence (PL) emission energies for all PB:Si NC diameters are ca. 400–500 meV lower than the excitonic emission values in intrinsic Si NCs, which can be attributed to prevalent donor–acceptor (D–A) transitions within the co-doped system. This D–A transition model is further evidenced by PL lifetimes within the range of 40–80 μs, faster than what is observed for intrinsic Si NCs. By reducing the level of confinement within PB:Si NCs (i.e., DNC > 4 nm), we are able to red-shift the near-infrared (NIR)-emitting D–A transitions to below the band gap of bulk Si (1.12 eV). We quantify the PL quantum yield (PLQY) for a range of DNC and show that the plasma method can achieve reasonably high PLQY values (12% for DNC = 2.9 nm), even without any optimization of the synthesis or surface chemistry. We posit that perfect charge c...

Nonradiative Auger recombination (AR) tends to dominate carrier dynamics in charged, quantum-confined structures. Consequently, it complicates the practical realization of many semiconductor nanocrystal (NC)-based devices such as light-emitting diodes, photovoltaic cells, and single-photon emitters, in which charged exciton states often occur. To this end, extensive experimental studies on direct band gap NCs have investigated the trion components (both positive and negative) that construct the total AR rate. However, such an analysis has remained elusive for indirect band gap Si NCs. In this study, we investigate AR decay of non-thermal plasma-produced n- and p-type-doped Si NCs. We expand the study over a large NC size range (DNC ≈ 3–8 nm), in which n- and p-type doping is achieved by either a substitutional or surface doping effect, respectively. First, we monitor the AR of charge-neutral multiexcitons by measuring the biexciton lifetime (τXX) as a function of the NC size and doping configuration. We s...

In this work, we explore the effect of ligand binding groups on the visible and NIR photoluminescent properties within phosphorus–boron co-doped silicon nanocrystals (PB:Si NCs) by exploiting both the X-type (covalent) and L-type (Lewis donor molecule) bonding interactions. We find that the cooperative nature of both X- and L-type bonding from alkoxide/alcohol, alkylamide/alkylamine, and alkylthiolate/alkylthiol on PB:Si NCs results in photoluminescence (PL) energy blue shifts from the as-synthesized, hydride-terminated NCs (PB:Si–H) in excess of 0.4 eV, depending on the surface termination. These PL blue shifts appear greatest in the most strongly confined samples with diameters

We report on the synthesis of ternary SiGeSn nanocrystals (NCs) produced via nonthermal plasma synthesis from silane (SiH4), germane (GeH4), and tetramethylstannane (Sn(CH3)4) precursor sources. Detailed structural, chemical, and vibrational analyses show that all three elements are incorporated both on the NC surface and within the NC core. Incorporation of Sn into the NC core is realized using a secondary injection of SiH4 and GeH4 precursor gases in the after-glow region of the plasma, which kinetically traps Sn in the core. We demonstrate compositional tunability of the SiGeSn NCs in which the Si and Ge ratios can be varied broadly at low Sn concentrations. We also show tunability of the Sn content up to ∼2 atomic percent as revealed by ICP-MS analysis. More generally, this report demonstrates how nonthermal plasma synthesis can be used to produce metastable ternary nanostructured alloys involving thermodynamically insoluble constituents.

Recently, solution-processing became a viable route for depositing CdTe for use in photovoltaics. Ultrathin (∼500 nm) solar cells have been made using colloidal CdTe nanocrystals with efficiencies exceeding 12% power conversion efficiency (PCE) demonstrated by using very simple device stacks. Further progress requires an effective method for extracting charge carriers generated during light harvesting. Here, we explored solution-based methods for creating transparent Ohmic contacts to the solution-deposited CdTe absorber layer and demonstrated molecular and nanocrystal approaches to Ohmic hole-extracting contacts at the ITO/CdTe interface. We used scanning Kelvin probe microscopy to further show how the above approaches improved carrier collection by reducing the potential drop under reverse bias across the ITO/CdTe interface. Other methods, such as spin-coating CdTe/A2CdTe2 (A = Na, K, Cs, N2H5), can be used in conjunction with current/light soaking to improve PCE further.

Film-based photovoltaic modules employ monolithic interconnects to minimize resistance loss and enhance module voltage via series connection. Conventional interconnect construction occurs sequentially, with a scribing step following deposition of the bottom electrode, a second scribe after deposition of absorber and intermediate layers, and a third following deposition of the top electrode. This method produces interconnect widths of about 300 µm, and the area comprised by interconnects within a module (generally about 3%) does not contribute to power generation. The present work reports on an increasingly popular strategy capable of reducing the interconnect width to less than 100 µm: printing interconnects. Cost modeling projects a savings of about $0.02/watt for CdTe module production through the use of printed interconnects, with savings coming from both reduced capital expense and increased module power output. Printed interconnect demonstrations with copper-indium-gallium-diselenide and cadmium-telluride solar cells show successful voltage addition and miniaturization down to 250 µm. Material selection guidelines and considerations for commercialization are discussed.

Colloidally synthesized quantum-confined semiconducting spherical nanocrystals, often referred to as quantum dots (QDs), offer a high degree of chemical, optical, and electronic tunability. As a result, there is an increasing interest in employing colloidal QDs for electronic and optical applications that is reflected in a growing number of publications. In this protocol we provide detailed procedures for the fabrication of QD solar cells specifically employing PbSe and PbS QDs. We include details that are learned through experience, beyond those in typical methodology sections, and include example pictures and videos to aid in fabricating QD solar cells. Although successful solar cell fabrication is ultimately learned through experience, this protocol is intended to accelerate that process. The protocol developed here is intended to be a general starting point for developing PbS and PbSe QD test bed solar cells. We include steps for forming conductive QD films via dip coating as well as spin coating. Fin...

The excellent optoelectronic properties demonstrated by hybrid organic/inorganic metal halide perovskites are all predicated on precisely controlling the exact nucleation and crystallization dynamics that occur during film formation. In general, high‐performance thin films are obtained by a method commonly called solvent engineering (or antisolvent quench) processing. The solvent engineering method removes excess solvent, but importantly leaves behind solvent that forms chemical adducts with the lead‐halide precursor salts. These adduct‐based precursor phases control nucleation and the growth of the polycrystalline domains. There has not yet been a comprehensive study comparing the various antisolvents used in different perovskite compositions containing cesium. In addition, there have been no reports of solvent engineering for high efficiency in all‐inorganic perovskites such as CsPbI3. In this work, inorganic perovskite composition CsPbI3 is specifically targeted and unique adducts formed between CsI and precursor solvents and antisolvents are found that have not been observed for other A‐site cation salts. These CsI adducts control nucleation more so than the PbI2–dimethyl sulfoxide (DMSO) adduct and demonstrate how the A‐site plays a significant role in crystallization. The use of methyl acetate (MeOAc) in this solvent engineering approach dictates crystallization through the formation of a CsI–MeOAc adduct and results in solar cells with a power conversion efficiency of 14.4%.

Generating multiple excitons by a single high-energy photon is a promising third-generation solar energy conversion strategy. We demonstrate that multiple exciton generation (MEG) in PbS|CdS Janus-like heteronanostructures is enhanced over that of single-component and core/shell nanocrystal architectures, with an onset close to two times the PbS band gap. We attribute the enhanced MEG to the asymmetric nature of the heteronanostructure that results in an increase in the effective Coulomb interaction that drives MEG and a reduction of the competing hot exciton cooling rate. Slowed cooling occurs through effective trapping of hot-holes by a manifold of valence band interfacial states having both PbS and CdS character, as evidenced by photoluminescence studies and ab initio calculations. Using transient photocurrent spectroscopy, we find that the MEG characteristics of the individual nanostructures are maintained in conductive arrays and demonstrate that these quasi-spherical PbS|CdS nanocrystals can be incorporated as the main absorber layer in functional solid-state solar cell architectures. Finally, based upon our analysis, we provide design rules for the next generation of engineered nanocrystals to further improve the MEG characteristics.

Multiple exciton generation (MEG) in quantum dots (QDs) has the potential to greatly increase the power conversion efficiency in solar cells and in solar-fuel production. During the MEG process, two electron–hole pairs (excitons) are created from the absorption of one high-energy photon, bypassing hot-carrier cooling via phonon emission. Here we demonstrate that extra carriers produced via MEG can be used to drive a chemical reaction with quantum efficiency above 100%. We developed a lead sulfide (PbS) QD photoelectrochemical cell that is able to drive hydrogen evolution from aqueous Na2S solution with a peak external quantum efficiency exceeding 100%. QD photoelectrodes that were measured all demonstrated MEG when the incident photon energy was larger than 2.7 times the bandgap energy. Our results demonstrate a new direction in exploring high-efficiency approaches to solar fuels. Multiple exciton generation has been shown to improve the performance of quantum-dot-based solar cells. Yan et al. now apply it to photoinduced hydrogen production and present a system using PbS quantum-dot photoelectrodes that yields an external quantum efficiency of over 100%.

Monolithic interconnects in photovoltaic modules connect adjacent cells in series, and are typically formed sequentially involving multiple deposition and scribing steps. Interconnect widths of 500 µm every 10 mm result in 5 % dead area, which does not contribute to power generation in an interconnected solar panel. This work expands on previous work that introduced an alternative interconnection method capable of producing interconnect widths less than 100 µm. The interconnect is added to the module in a single step after deposition of the photovoltaic stack, eliminating the need for scribe alignment. This alternative method can be used for all types of thin film photovoltaic modules. Voltage addition with copper-indium-gallium-diselenide (CIGS) solar cells using a 2-scribe printed interconnect approach is demonstrated. Additionally, interconnect widths of 250 µm are shown.