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A 400 MHz magnetoelectric (ME) Lamb wave antenna design to function in the medical implant communication service band is proposed. The antenna employs a heterostructure of piezoelectric and magnetostrictive membranes to acoustically excite standing shear bulk wave and radiate as a magnetic dipole. Multiphysics finite element analysis simulations are performed for transmission and reception modes. In these simulations, three aspects are investigated: piezoelectricity, micromagnetic precession, and magnetic dipole radiation. An experimental demonstration of the antenna is also conducted and shows mechanical resonance with a Q-factor of 500 and ME coupling. These results indicate that the design can be operated in zero-order antisymmetric (A0) mode as a tunable oscillator or sensor. This ME approach provides a solution to the miniaturization problem of traditional current-based implantable antennas.

A cost-effective method for the quantitative characterization of the magnetostrictive effect in thin films is presented. In this method, a sample's magnetostriction is extrapolated from the tip displacement of a thin-film magnetostrictive cantilever. The tip displacement is measured by monitoring the position of a reflected laser beam using two differentially coupled photodiode positioning sensors. In contrast with alternative optical deflection-angle devices designed for educational purposes, the detection limit of our setup resolves submicron-level displacements from nanoscale thin films. The efficacy of the system is demonstrated through measurements using amorphous 200-nm thick Terfenol-D/Si (100) bimorph cantilevers. In these measurements, magnetostriction values of 106 ± 3.5 ppm at ±4300 Oe applied field were attained, where the voltage noise floor was ±0.05 V (a cantilever displacement uncertainty of ±70 nm). In-plane (IP) and out-of-plane (OOP) magnetization curves and crystallographic x-ray diffraction (XRD) were performed to determine the magnetic behavior and confirm the amorphous nature of the films, respectively. The experimental methods and material characterization systems demonstrated here enhance the understanding of complex magnetic phenomena and introduce common measurement techniques to better equip students with the skills for insightful analysis of fundamental magnetic physics.

The relationship between stresses and the orientation of the Néel vector were studied by varying the residual stresses in magnetron sputtered FeMn thin films by adjusting Argon working pressures. Quasistatic magnetization and AC susceptibility measurements reveal that the FeMn film with compressive stress (−27 MPa/−0.015% strain) possesses an out-of-plane Néel vector orientation with a 44 kOe spin-flop field, as contrasted to the FeMn film with tensile stress (25 MPa/0.014% strain) showing an in-plane orientation with a 34 kOe spin-flop field. An energy formulation for the films estimates a magnetostriction value of 109 ppm following an effective anisotropy of −8 kJ/m3. The film with the larger residual stress (77 MPa/0.043% strain) displayed a strain-induced phase transition from γ-FeMn to α-FeMn. These results show the dependency of the Néel vector on the stress state indicative of relatively large magnetostriction.

The magnetoelectric properties of exchange-coupled Ni/CoFeB-based composite multiferroic microstructures are investigated. The strength and sign of the magnetoelastic effect are found to be strongly correlated with the ratio between the thicknesses of two magnetostrictive materials. In cases where the thickness ratio deviates significantly from one, the magnetoelastic behavior of the multiferroic microstructures is dominated by the thicker layer, which contributes more strongly to the observed magnetoelastic effect. More symmetric structures with a thickness ratio equal to one show an emergent interfacial behavior which cannot be accounted for simply by summing up the magnetoelastic effects occurring in the two constituent layers. This aspect is clearly visible in the case of ultrathin bilayers, where the exchange coupling drastically affects the magnetic behavior of the Ni layer, making the Ni/CoFeB bilayer a promising next-generation synthetic magnetic system entirely. This study demonstrates the richness and high tunability of composite multiferroic systems based on coupled magnetic bilayers compared to their single magnetic layer counterparts. Furthermore, because of the compatibility of CoFeB with present magnetic tunnel junction-based spintronic technologies, the reported findings are expected to be of great interest for the development of ultralow-power magnetoelectric memory devices.

An unconditionally stable finite-difference time-domain (FDTD) algorithm is proposed to predict and understand the complex response in strain-mediated multiferroic radio frequency devices, such as antennas. A system of three coupled sets of governing equations is solved simultaneously: 1) Maxwell's equations for electromagnetic (EM) wave propagation; 2) Landau–Lifshitz–Gilbert equation for magnetic spin response; and 3) Newton's law for acoustic behavior. The formulation of this algorithm is elaborated on in detail followed by a demonstration of its capability through the simulation of a 1.3- μ m-thick bulk-acoustic-wave (BAW)-based strain-mediated multiferroic antenna. Analysis of the far-field radiation efficiency of this antenna as a function of magnetic dc bias demonstrates the importance of aligning the ferromagnetic resonance (FMR) and the mechanical BAW resonance to enhance EM radiation performance. Results also show that reducing the magnetic loss, or in other words, reducing the FMR linewidth, represents the dominating feature to achieve higher radiation efficiencies in these antennas.

This article focuses on computational studies evaluating the influence of crystallinity, residual stresses, and out-of-plane (OOP) deterministic switching on Terfenol-D nano/microstructures. The computational models use both coupled and uncoupled Landau–Liftshitz–Gilbert equations with elastodynamics to study strain-induced magnetization reorientation. A Voronoi tessellation approach models the crystal distribution in the microstructures subjected to residual stresses with good agreement to experimental data including large changes in coercivity values, i.e., from 100 to 3000 Oe. Parametric studies show how the coercivity is manipulated with residual stresses, including a magnetoelastically induced perpendicular-magnetic-anisotropy (PMA), important for memory applications. Additional parametric studies focus on epitaxially deposited micro-disks, revealing that residual stresses can create magnetoelastically dominant easy axes along the [Formula: see text] directions, which are energetically favorable relative to the intrinsic [Formula: see text] magnetocrystalline easy axes. Modification of the global easy axis is used to design a strain-mediated multiferroic composite consisting of a 20 nm epitaxially deposited Terfenol-D memory bit with PMA grown on a PZT substrate. The multiferroic disk achieves OOP deterministic clocking with an applied voltage.

Symmetry breaking is a characteristic to determine which branch of a bifurcation system follows upon crossing a critical point. Specifically, in spin-orbit torque (SOT) devices, a fundamental question arises: how to break the symmetry of the perpendicular magnetic moment by the in-plane spin polarization? Here, we show that the chiral symmetry breaking by the DMI can induce the deterministic SOT switching of the perpendicular magnetization. By introducing a gradient of saturation magnetization or magnetic anisotropy, non-collinear spin textures are formed by the gradient of effective SOT strength, and thus the chiral symmetry of the SOT-induced spin textures is broken by the DMI, resulting in the deterministic magnetization switching. We introduce a strategy to induce an out-of-plane (z) gradient of magnetic properties, as a practical solution for the wafer-scale manufacture of SOT devices., 16 pages, 4 figures

The abundance of low-grade waste heat necessitates energy harvesting devices to convert thermal energy to electrical energy. Through magnetic transduction, thermomagnetics can perform this conversion at reasonable efficiencies. Thermomagnetic materials use thermal energy to switch between magnetic and non-magnetic states and convert thermal energy into electrical energy. In this study, we numerically analyzed an active thermomagnetic device for thermal energy harvesting composed of gadolinium (Gd) and neodymium iron boron (NdFeB). A parametric study to determine the device efficiency was conducted by varying the gap distance, heat source temperature, and Gd thickness. Furthermore, the effect of the thermal conductance and applied field was also evaluated. It was found that the relative efficiency for smaller gap distances ranges from ∼15% to 28%; the largest allowable volume of Gd should be used and higher applied field leads to higher efficiencies.

The magnetoelastic behavior of multiferroic heterostructures—coupling of magnetic anisotropy or domain dynamics to structural deformations—has been intensively studied for developing materials for energy-efficient, spin-based applications. Here, we report on a large, interface-dominated magnetostriction in (Co/Ni)4/Pb(Mg1/3Nb2/3)O3–PbTiO3 multiferroic heterostructures. Ferromagnetic resonance spectroscopy under voltage-induced strains enabled estimation of the saturation magnetostriction as a function of Ni thickness. The volume and the interface components to the saturation magnetostriction are (6.6 ± 0.9) × 10–6 and (−2.2 ± 0.2) × 10–14 m, respectively. Similar to perpendicular magnetic anisotropy in Co/Ni, the large, negative magnetostriction originates from the Co/Ni interfaces. This interfacial functionality delivers an effect over 300% larger than the bulk contribution and can enable low-energy, nanoelectronic devices that combine the tunable magnetic and magnetostrictive properties of Co/Ni multila...

We describe a spin wave modulator – spintronic device aimed to control spin wave propagation by an electric field. The modulator consists of a ferromagnetic film serving as a spin wave bus combined with a synthetic multiferroic comprising piezoelectric and magnetostrictive materials. Its operation is based on the stress-mediated coupling between the piezoelectric and magnetostrictive materials. By applying an electric field to the piezoelectric layer, the stress is produced. In turn, the stress changes the direction of the easy axis in the magnetostrictive layer and affects spin wave transport. We present experimental data on a prototype consisting of a piezoelectric [Pb(Mg1/3Nb2/3)O3](1-x) –[PbTiO3]x substrate, and 30 nm layer of magnetostrictive Ni film, where the film is attached to a 30 nm thick Ni81Fe19 spin wave bus. We report spin wave signal modulation in Ni81Fe19 layer by an electric field applied across the piezoelectric layer. The switching between the spin wave conducting and non-conducting states is achieved by applying ±0.3 MV/m electric field. We report over 300% modulation depth detected 80 μm away from the excitation port at room temperature. The demonstration of the spin wave modulator provides a new direction for spin-based device development by utilizing an electric field for spin current control.

This work demonstrates that magnetoelectric composite heterostructures can be designed at the length scale of 10µms that can be switched from a magnetized state to a vortex state, effectively switching the magnetization off, using electric field induced strain. This was accomplished using thin film magnetoelectric heterostructures of Fe81.4Ga18.6on a single crystal (011) [Pb(Mg1/3Nb2/3)O3]0.68-[PbTiO3]0.32(PMN-32PT) ferroelectric substrate. The heterostructures were tripped from a multi-domain magnetized state to a flux closure vortex state using voltage induced strain in a piezoelectric substrate. FeGa heterostructures were deposited on a Si-substrate for superconducting quantum interference device magnetometry characterization of the magnetic properties. The magnetoelectric coupling of a FeGa continuous film on PMN-32PT was characterized using a magneto optical Kerr effect magnetometer with bi-axial strain gauges, and magnetic multi-domain heterostructures were imaged using x-ray magnetic circular dichroism—photoemission electron microscopy during the transition to the vortex state. The domain structures were modelled using MuMax3, a micromagnetics code, and compared with observations. The results provide considerable insight into designing magnetoelectric heterostructures that can be switched from an ‘on’ state to an ‘off’ state using electric field induced strain.

Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 105 A cm−2 have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiency θSH in TIs is quantified by both the SOT-induced shift of the magnetic switching field (θSH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θSH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption., It remains challenging to integrate topological insulators (TI) with magnetic tunnel junctions (MTJ) for spintronics applications. Here, the authors achieve a large tunneling magnetoresistance ratio and a low switching current density in a TI-MTJ device at room temperature, very promising for TI-driven magnetic memory.

We demonstrate deterministic multi-step rotation of a magnetic single-domain (SD) state in Nickel nanodisks using the multiferroic magnetoelastic effect. Ferromagnetic Nickel nanodisks are fabricated on a piezoelectric Lead Zirconate Titanate (PZT) substrate, surrounded by patterned electrodes. With the application of a voltage between opposing electrode pairs, we generate anisotropic in-plane strains that reshape the magnetic energy landscape of the Nickel disks, reorienting magnetization toward a new easy axis. By applying a series of voltages sequentially to adjacent electrode pairs, circulating in-plane anisotropic strains are applied to the Nickel disks, deterministically rotating a SD state in the Nickel disks by increments of 45°. The rotation of the SD state is numerically predicted by a fully-coupled micromagnetic/elastodynamic finite element analysis (FEA) model, and the predictions are experimentally verified with magnetic force microscopy (MFM). This experimental result will provide a new pathway to develop energy efficient magnetic manipulation techniques at the nanoscale.

The objective of this paper is to present a methodology for the design of a memory bit to minimize the energy required to write data at the bit level. By straining a ferromagnetic nickel nano-dot by means of a piezoelectric substrate, its magnetization vector rotates between two stable states defined as a 1 and 0 for digital memory. The memory bit geometry, actuation mechanism and voltage control law were used as design variables. The approach used was to decompose the overall design process into simpler sub-problems whose structure can be exploited for a more efficient solution. This method minimizes the number of fully dynamic coupled finite element analyses required to converge to a near optimal design, thus decreasing the computational time for the design process. An in-plane sample design problem is presented to illustrate the advantages and flexibility of the procedure.

We present a comprehensive first principles electronic structure study of the magnetoelastic and magnetostrictive properties in the Co-based Co$_2$XAl (X = V, Ti, Cr, Mn, Fe) full Heusler compounds. In addition to the commonly used total energy approach, we employ torque method to calculate the magnetoelastic tensor elements. We show that the torque based methods are in general computationally more efficient, and allow to unveil the atomic- and orbital-contributions to the magnetoelastic constants in an exact manner, as opposed to the conventional approaches based on second order perturbation with respect to the spin-orbit coupling. The magnetostriction constants are in good agreement with available experimental data. The results reveal that the main contribution to the magnetostriction constants, $\lambda_{100}$ and $\lambda_{111}$, arises primarily from the strained-induced modulation of the $\langle d_{x^2-y^2}|\hat{L}_z|d_{xy}\rangle$ and $\langle d_{z^2}|\hat{L}_x|d_{yz}\rangle$ spin orbit coupling matrix elements, respectively, of the Co atoms., Comment: 9 pages, 4 figures

Software-defined radio (SDR) requires multi-use or reconfigurable radio-frequency front ends, with filters capable of dynamically shifting their operating frequencies. Current approaches to tunable filters typically require prohibitively large electric fields to achieve large tuning. This study utilizes a multiferroic approach, with an electric field straining magnetoelastic elements to tune the system's magnetic resonance. Furthermore, dipole coupling of the elements yields mode splitting, for additional resonance peaks that depend on element spacing and applied strain. This could lead to innovative types of rf filters for SDR, where communication frequencies are rapidly changing.

In this Letter, we explore a non-degenerate phase independent parametric quality factor (Q)-enhancement technique for aluminum nitride (AlN) Lamb wave resonators. Unlike other active Q-enhancement techniques which require precise phase control of the electronic feedback loop, this technique is implemented by parametrically pumping AlN material stiffness to realize a negative resistance seen at the signal path. The negative resistance is dependent on the nonlinear material modulation and multi-resonance coupling in the device. A nonlinear circuit model is developed to simulate the parametric coupling of each resonance and extract the nonlinearity of AlN from experimental data. With proper pump frequency and pump power, the device quality factor is boosted in both simulation and experiment. The demonstrated Q-enhancement method is simple to implement and can be applied to other types of resonators that have nonlinear behavior and support multi-resonance operation.

Studies on giant magnetostrictive intermetallic compound Tb0.3Dy0.7 Fe1.92 (Terfenol-D) thin films are gaining increasing attention due to the interest in small scale magnetic structures. In this work, polycrystalline Terfenol-D thin films (60 nm) are produced using a Direct Current (DC) magnetron sputtering process and a hybrid thermal annealing approach, i.e. substrate heating and post-annealing. The crystallized Terfenol-D films are micropatterned (3 μm and 20 μm diameters) using a photolithographic method followed by Argon etching. The continuous and micropatterned thin films are characterized with XRD, SQUID and MOKE magnetometers showing properties similar to bulk polycrystalline Terfenol-D. Additional studies are conducted using X-ray absorption spectroscopy and the X-ray magnetic circular dichroism to investigate oxidation. Results show that while the top surface of these Terfenol-D structures are capped with Ta thin films, the side walls of the structures are exposed to ambient atmosphere raising the concern of oxidation issues. This work shows that a passivating oxide layer forms on the side walls of these small-scale Terfenol-D disks which is attributed to both the Ta capping layer as well as residual stresses preventing continued stress corrosion cracking caused by the oxidation process.

We investigate localized in-plane strains on the microscale, induced by arrays of biased surface electrodes patterned on piezoelectrics. Particular focus is given to the influence that adjacent electrode pairs have on one another to study the impact of densely packed electrode arrays. We present a series of X-ray microdiffraction studies to reveal the spatially resolved micrometer-scale strain distribution. The strain maps with micrometer-scale resolution highlight how the local strain profile in square regions up to 250 × 250 μ m2 in size is affected by the surface electrodes that are patterned on ferroelectric single-crystal [Pb(Mg1/3Nb2/3)O3]x-[PbTiO3]1−x. The experimental measurements and simulation results show the influence of electrode pair distance, positioning of the electrode pair, including the angle of placement, and neighboring electrode pair arrangements on the strength and direction of the regional strain. Our findings are relevant to the development of microarchitected strain-mediated multiferroic devices. The electrode arrays could provide array-addressable localized strain control for applications including straintronic memory, probabilistic computing platforms, microwave devices, and magnetic-activated cell sorting platforms.

As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Secondly, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO exhibiting a positive sign of the in-plane magnetostriction. This method of anisotropy-tuning offers an energy efficient, on-chip alternative to manipulate a polycrystalline antiferromagnets magnetic state.

Soft x-ray Magnetic Circular Dichroism spectroscopy at the Dy and Tb M 4 , 5 and the Fe L 2 , 3 edges was performed on a sputter deposited polycrystalline Terfenol-D (Tb0.3Dy0.7Fe2) film on sapphire substrates at temperatures from 100 to 300 K to evaluate the elementwise contribution to the magnetocrystalline anisotropy and coercive field. The elemental spin and orbital magnetic moments were calculated using the x-ray Magnetic Circular Dichroism sum rules. As temperatures decreased, the Tb and Fe moments plateau at 200 K with values of 7.6 μB/atom and 1.8 μB/atom, respectively, while the Dy moment increases to 8.9 μB/atom at 100 K. Between 300 and 200 K, the change in magnetic anisotropy is dominated by thermally induced magnetoelastic effects while for temperatures below 200 K magnetocrystalline anisotropy (MCA) changes are dominant. The MCA changes below 200 K appear to be due to increases in the Dy orbital moment with decreasing temperature in this temperature regime.

Programming magnetic fields with microscale control can enable automation at the scale of single cells ≈10 µm. Most magnetic materials provide a consistent magnetic field over time but the direction or field strength at the microscale is not easily modulated. However, magnetostrictive materials, when coupled with ferroelectric material (i.e., strain-mediated multiferroics), can undergo magnetization reorientation due to voltage-induced strain, promising refined control of magnetization at the micrometer-scale. This work demonstrates the largest single-domain microstructures (20 µm) of Terfenol-D (Tb0.3 Dy0.7 Fe1.92 ), a material that has the highest magnetostrictive strain of any known soft magnetoelastic material. These Terfenol-D microstructures enable controlled localization of magnetic beads with sub-micrometer precision. Magnetically labeled cells are captured by the field gradients generated from the single-domain microstructures without an external magnetic field. The magnetic state on these microstructures is switched through voltage-induced strain, as a result of the strain-mediated converse magnetoelectric effect, to release individual cells using a multiferroic approach. These electronically addressable micromagnets pave the way for parallelized multiferroics-based single-cell sorting under digital control for biotechnology applications.

Sputter-deposited thin film nitinol constructs with various micropatterns were fabricated to evaluate their effect on the vessel wall in vivo when used as a covering for commercially available stents. Thin film nitinol constructs were used to cover stents and deployed in non-diseased swine arteries. Swine were sacrificed after approximately four weeks and the thin film nitinol-covered stents were removed for histopathologic evaluation. Histopathology revealed differences in neointimal thickness that correlated with the thin film nitinol micropattern. Devices covered with thin film nitinol with a lateral × vertical length = 20 × 40 µm diamond pattern had minimal neointimal growth with well-organized cell architecture and little evidence of ongoing inflammation. Devices covered with thin film nitinol with smaller fenestrations exhibited a relatively thick neointimal layer with inflammation and larger fenestrations showed migration of inflammatory and smooth muscle cells through the micro fenestrations. This “proof-of-concept” study suggests that there may be an ideal thin film nitinol porosity and pore geometry to encourage endothelialization and incorporation of the device into the vessel wall. Future work will be needed to determine the optimal pore size and geometry to minimize neointimal proliferation and in-stent stenosis.

The first-order magneto-structural transformation that occurs in Gd5Si2Ge2 near room temperature makes it a strong candidate for many energy harvesting applications. Understanding the single crystal properties is crucial for allowing simulations of device performance. In this study, magnetically and thermally induced transformation strains were measured in a single crystal of Gd5Si2.05Ge1.95 as it transforms from a high-temperature monoclinic paramagnet to a lower-temperature orthorhombic ferromagnet. Thermally induced transformation strains of −8500 ppm, +960 ppm and +1800 ppm, and magnetically induced transformation strains of −8500 ppm, +900 ppm and +2300 ppm were measured along the a, b and c axes, respectively. Using experimental data coupled with general thermodynamic considerations, a universal phase diagram was constructed showing the transition from the monoclinic to the orthorhombic phase as a function of temperature and magnetic field.

Magnetic domain-wall motion driven by a voltage dissipates much less heat than by a current, but none of the existing reports have achieved speeds exceeding 100 m/s. Here phase-field and finite-element simulations were combined to study the dynamics of strain-mediated voltage-driven magnetic domain-wall motion in curved nanowires. Using a ring-shaped, rough-edged magnetic nanowire on top of a piezoelectric disk, we demonstrate a fast voltage-driven magnetic domain-wall motion with average velocity up to 550 m/s, which is comparable to current-driven wall velocity. An analytical theory is derived to describe the strain dependence of average magnetic domain-wall velocity. Moreover, one 180° domain-wall cycle around the ring dissipates an ultrasmall amount of heat, as small as 0.2 fJ, approximately 3 orders of magnitude smaller than those in current-driven cases. These findings suggest a new route toward developing high-speed, low-power-dissipation domain-wall spintronics.

Frequency conversion is an essential tool in modern communication devices. Traditionally, frequency conversion is achieved through parametric coupling via nonlinear inductors or capacitors whose reactance is modulated by a carrier wave. In this study, nonlinear acoustic Lamb wave devices are explored for simultaneous signal filtering and frequency conversion. Three sets of interdigitated transducers are fabricated on a piezoelectric aluminum nitride (AlN) thin film to provide a carrier wave, a low-power signal wave, and to receive a frequency converted mixed wave. Two devices are fabricated and tested to demonstrate frequency upconversion and downconversion by utilizing mechanical nonlinearity of AlN, and the results are compared to a nonlinear circuit model. The nonlinear circuit model is used to link experimentally observed phenomenon to the acoustic material's intrinsic nonlinearity. The nonlinearity of AlN reaches a maximum of 2.8% with a carrier wave power at 28 dBm. An analytical model is used to predict device performance along with physical dimensions. These analytical results show that nonlinear acoustic mixers and filters can approach sub-millimeter sizes, which is orders-of-magnitude smaller than conventional structures using nonlinear inductors and capacitors.

The soft magnetic, microstructural, and magnetostrictive properties of Fe81Ga19 (FeGa) film sputter deposited onto 2.5-nm Ta, Cu, and Ni80Fe20 (NiFe) underlayers were investigated. The films deposited with an underlayer showed increased in-plane uniaxial anisotropy and a decrease in in-plane coercivity. The smallest coercivity was observed in FeGa deposited with a NiFe underlayer at 15 Oe, compared to 84 Oe for films deposited directly on Si. In addition, an effective Gilbert damping coefficient (αeff) as low as 0.044 was achieved for a 100-nm FeGa film with a NiFe underlayer. The coercivity and αeff were shown to decrease further as a function of FeGa film thickness. The FeGa films were also able to retain or increase their saturation magnetostriction when deposited on an underlayer. This enhancement is attributable to the impact of the underlayer to promote an increased (110) film texture and smaller grain size, which is correlated to the lattice match of the underlayer of the sputtered FeGa film. Among the underlayers studied, NiFe promoted the best enhancement in the soft magnetic properties for FeGa thin films, making it an attractive material for both strain-mediated magnetoelectric and microwave device applications.

An ultra-thin (∼2.5 nm) non-magnetic Cu underlayer was found to have a significant effect on the microstructure, magnetic softness, and magnetostriction of sputter-deposited Fe81Ga19 (FeGa) thin films. Compared to the experimental control where FeGa was deposited directly on Si without an underlayer, the presence of Cu increased the in-plane uniaxial anisotropy of FeGa and reduced the in-plane coercivity by nearly a factor of five. The effective Gilbert damping coefficient was also significantly reduced by a factor of four, between FeGa on Si and FeGa on a Cu underlayer. The FeGa films on Cu also retained a high saturation magnetostriction comparable to those without an underlayer. The enhancement of the desirable magnetic properties for microwave applications is attributed to the Cu underlayer, promoting the (110) film texture and increasing the compressive film strain. The results demonstrated that the structural control is viable to simultaneously achieve the necessary magnetic softness and magnetostriction in FeGa for integration in strain-mediated magnetoelectric and microwave devices.

We report results of micro-Brillouin-Mandelstam light scattering spectroscopy of thermal magnons in the two-phase synthetic multiferroic structure consisting of a piezoelectric (PMN-PT) substrate and a Ni thin film with the thickness of 64 nm. The experimental data reveal the first two modes of the perpendicular standing spin waves (PSSW) spatially confined across the Ni thin film. A theoretical analysis of the frequency dependence of the PSSW peaks on the external magnetic field reveals the asymmetric boundary condition, i.e. pinning, for variable magnetization at different surfaces of the Ni thin film. The strain field induced by applying DC voltage to PMN-PT substrate leads to a down shift of PSSW mode frequency owing to the magneto-elastic effect in Ni, and corresponding changes in the spin wave resonance conditions. The observed non-monotonic dependence of the PSSW frequency on DC voltage is related to an abrupt change of the pinning parameter at certain values of the voltage. The obtained results are important for understanding the thermal magnon spectrum in ferromagnetic films and development of the low-power spin-wave devices., Comment: 15 pages, 6 figures

We used two different solid state synthesis routes in conjunction with Current Activated Pressure Assisted Densification (CAPAD) to produce lead-free 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (called BZT-BCT or BXT) ceramics. The materials are fully dense and have a wide range of grain sizes from nanocrystalline (90 nm) to more conventional micrometer size range (3 μm). We investigate the role of grain size and phase homogeneity on the dielectric and ferroelectric properties of BXT independent of porosity. One of the synthesis routes yields samples with comparably high switchable polarization, 2Pr at grain sizes ~7 times smaller (420 nm) than the former route.

Strain-coupled composite multiferroics, comprised of magnetostrictive and piezoelectric materials, promise tunable control of magnetism in applications such as rf resonators, sensors, and energy harvesters. Using polarized neutron reflectometry, the authors demonstrate that magnetostrictive and weakly magnetostrictive materials in a multilayer can be strain-coupled to an electric field over large length scales that enable designer functionality across a range of device applications.

The magnetoelastic behavior of multiferroic heterostructures-coupling of magnetic anisotropy or domain dynamics to structural deformations-has been intensively studied for developing materials for energy-efficient, spin-based applications. Here, we report on a large, interface-dominated magnetostriction in (Co/Ni)

Strain-coupled multiferroic heterostructures provide a path to energy-efficient, voltage-controlled magnetic nanoscale devices, a region where current-based methods of magnetic control suffer from Ohmic dissipation. Growing interest in highly magnetoelastic materials, such as Terfenol-D, prompts a more accurate understanding of their magnetization behavior. To address this need, we simulate the strain-induced magnetization change with two modeling methods: the commonly used unidirectional model and the recently developed bidirectional model. Unidirectional models account for magnetoelastic effects only, while bidirectional models account for both magnetoelastic and magnetostrictive effects. We found unidirectional models are on par with bidirectional models when describing the magnetic behavior in weakly magnetoelastic materials (e.g., Nickel), but the two models deviate when highly magnetoelastic materials (e.g., Terfenol-D) are introduced. These results suggest that magnetostrictive feedback is critical for modeling highly magnetoelastic materials, as opposed to weaker magnetoelastic materials, where we observe only minor differences between the two methods’ outputs. To our best knowledge, this work represents the first comparison of unidirectional and bidirectional modeling in composite multiferroic systems, demonstrating that back-coupling of magnetization to strain can inhibit formation and rotation of magnetic states, highlighting the need to revisit the assumption that unidirectional modeling always captures the necessary physics in strain-mediated multiferroics.

Strain-mediated multiferroic heterostructures relying on fast 180° precessional magnetic switching have been proposed as a pathway for energy efficient and high density memory/logic devices. However, proper device performance requires precisely timed high frequency (~GHz) voltage pulses dependent on the magnetization dynamics of the structure. In turn, the dynamic response of the device is greatly influenced by the device geometry, strain amplitude, and strain rate. Hence, we study the effects of increasing the voltage amplitude and application rate on the in-plane magnetization dynamics of a single-domain CoFeB ellipse (100 nm x 80 nm x 6 nm) on a 500 nm thick PZT substrate in addition to studying defects in the geometry. Both a coupled micromagnetics, electrostatics and elastodynamics finite element model and a conventional micromagnetics software was used to study the strain-induced magnetic response of the CoFeB ellipse. Both models predict increased 90° magnetic reorientation speed with increased strain amplitude and rate. However, the fully-coupled model predicts slower reorientation and incoherency in comparison to the uncoupled model. This occurs because the fully-coupled model can capture the expected strain gradients of a fabricated device while the micromagnetics model can only represent uniform strain states. Additional studies which introduce geometric defects result in faster precessional motion under the same strain amplitude and rate. This is attributed to localized changes in the magnetization that influence neighboring regions via exchange and demagnetization effects. The results of these studies can help design better devices that will be less sensitive to defects and voltage applications for future strain-mediated multiferroic devices.

International audience; Composite multiferroic systems, consisting of a piezoelectric substrate coupled with a ferromagnetic thin film, are of great interest from a technological point of view because they offer a path toward the development of ultralow power magnetoelectric devices. The key aspect of those systems is the possibility to control magnetization via an electric field, relying on the magneto-elastic coupling at the interface between the piezoelectric and the ferromagnetic components. Accordingly, a direct measurement of both the electrically induced magnetic behavior and of the piezo-strain driving such behavior is crucial for better understanding and further developing these materials systems. In this work, we measure and characterize the micron-scale strain and magnetic response, as a function of an applied electric field, in a composite multiferroic system composed of 1 and 2 μm squares of Ni fabricated on a prepoled [Pb(Mg 1/3 Nb 2/3)O 3 ] 0.69 −[PbTiO 3 ] 0.31 (PMN−PT) single crystal substrate by X-ray microdiffraction and X-ray photoemission electron microscopy, respectively. These two complementary measurements of the same area on the sample indicate the presence of a nonuniform strain which strongly influences the reorientation of the magnetic state within identical Ni microstructures along the surface of the sample. Micromagnetic simulations confirm these experimental observations. This study emphasizes the critical importance of surface and interface engineering on the micron-scale in composite multiferroic structures and introduces a robust method to characterize future devices on these length scales.

In this paper, we present the effect of micron size holes on proliferation and growth of human aortic endothelial cells (HAECs). Square shaped micron size holes (5, 10, 15, 20 and 25 μm) separated by 10 μm wide struts are fabricated on 5 μm thick sputter deposited Nitinol films. HAECs are seeded onto these micropatterned films and analyzed after 30 days with fluorescence microscopy. Captured images are used to quantify the nucleus packing density, size, and aspect ratio. The films with holes ranging from 10 to 20 μm produce the highest cell packing densities with cell nucleus contained within the hole. This produces a geometrically regular grid like cellular distribution pattern. The cell nucleus aspect ratio on the 10–20 μm holes is more circular in shape when compared to aspect ratio on the continuous film or larger size holes. Finally, the 25 μm size holes prevented the formation of a continuous cell monolayer, suggesting the critical length that cells cannot bridge is between 20 to 25 μm.