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1. Improvements of 4H-SiC power p-i-n diode switching performance through local lifetime control using boron diffusion

Author

Bolotnikov, Alexander V., Muzykov, Peter G., Grekov, Alexander E., and Sudarshan, T. S.

Subjects
Diodes, Semiconductor -- Electric properties, Integrated circuit fabrication -- Analysis, Integrated circuit fabrication, Business, Electronics, Electronics and electrical industries
Abstract

A comparison is done out of the switching characteristics of 4H-SiC conventional p-i-n rectifiers and p-i-n diodes. It is seen that the boron diffusion can provide a better trade-off between simplicity of fabrication process, good blocking capabilities, and better switching performance with respect to devices that are fabricated by conventional methods.

Published
2007

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