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We present results of x-ray study of spatial properties of $��-��$ conjugated networks in polymer thin films. We applied the x-ray cross-correlation analysis to x-ray scattering data from blends of poly(3-hexylthiophene) (P3HT) and gold nanoparticles. The Fourier spectra of the intensity cross-correlation functions for different films contain non-zero components of orders $n=2,4$ and $6$ measuring the degree of structural order in the system., 6 pages, 2 figures, Proceedings ICXOM22 Conference, 2-6 September 2013, Hamburg, Germany

We report on the formation of ion beam induced ripples in Si(001) wafers when bombarded with Ar+ ions at an energy of 60keV. A set of samples varying incidence and azimuthal angles of the ion beam with respect to the crystalline surface orientation was studied by two complementary near surface sensitive techniques, namely atomic force microscopy and depth-resolved X-ray grazing incidence diffraction. Additionally cross-section TEM investigations were carried out. The ripple-like structures are formed at the sample surface as well as at the buried amorphous-crystalline interface. Best quality of the ripple pattern was found when the irradiating ion beam was aligned parallel to the planes. The quality decreases rapidly if the direction of ion beam deviates from .

The formation of surface-nanostructures with a characteristic size ranging from several nanometer up to microns has attracted significant interest in the last decades in the context of fabrication of novel opto-electronic and storage devices. One kind of those nanostructures are wave-like patterns (ripples) produced by an interplay between a roughening process caused by ion beam erosion (sputtering) of the surface and smoothening processes caused by surface diffusion. In this contribution we report on investigations of patterned Si (001) surfaces after irradiation with Xe+ -ions using ion-energies up to 40keV. During the sputtering, an amorphous surface-layer is formed followed by a rather sharp interface towards crystalline material, showing the same morphology as the surface. The structures of the amorphous layer and the amorphous-crystalline interface were studied by means of grazingincidence - small angle scattering (GISAXS) and diffraction (GID) using synchrotron-radiation. We found that the crystal structure at the interface is expanded along the ripples, caused by the creation of defects inside the surface region, whereas this expansion is strongly reduced across the ripples. This different relaxation may play a driving role in pattern formation at the interface.

We measured the thermal expansion coefficient of a vertically stacked multi-quantum-well structure buried under a thick GaAs top layer before and after lateral patterning of the GaAs top layer. After patterning the thermal expansion coefficient of the whole multi-quantum-well structure differs from that of the planar structure by about 20%. Based on calculations in terms of methods of finite elements the effect is explained by the influence of the strain field originating from the bottom edges of the etched nanostructure. Due to the long range nature of this strain field the strain release within the individual quantum wells changes as a function from the distance from the valley.

Ion beam bombardment on semiconductor surfaces leads to welldefined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe+ ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We try to distinguish between ion beam induced surface defects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

The morphological evolution of surfaces during ion-beam irradiation has attracted a significant interest due to possibility of the development and the controlling of selforganization in nanostructures. Pattering and texture on nanometer length scale at metal and semiconductor surfaces has become a topic of intense research. In particular the surface and subsurface ripple formation under 40Ar+ ion-beam irradiation of Si (100) crystal has been studied recently. Strong ripple formation has been found for an irradiation energy of 60keV and incident angles around 60degree. During implantation a corrugated surface layer is formed, consisting of a strongly damaged, amorphous near-surface layer followed by a nearly sinusoidal shaped interface towards the crystalline material. In the present work, we investigate the onset and evolution of ripple-formation as function of implantation energy and incidence angle of the ion beam.

Ripple formation with a spatial periodicity in the sub-micrometer range on obliquely ion-bombarded solid surfaces has become a topic of intense research in the context of fabrication of nanoscale textured materials [1]. Ion-beam induced ripples are produced by the interplay between a roughening process caused by ion beam erosion (sputtering) of the surface and smoothening processes caused by thermally or ion-induced surface diffusion. Recently we have shown that Ar- ion irradiation of Si (001) surfaces under an angle of about 60° with respect to surface normal and using ion energies of about 60keV results in periodic crystalline ripple formation where the crystalline ripples are covered by a partially amorphous surface layer [2, 3]. In this contribution we report on investigations of patterned Si (001) surfaces after irradiation with Xe-ions using ion-energies between 5 and 40keV. Besides AFM measurements, the structure of the amorphous layer and the amorphous-crystalline interface were studied by means of grazing-incidence small-angle scattering (GISAXS) and grazing-incidence diffraction (GID) using synchrotron-radiation. The data reveal that both surface and crystalline ripples appear for all ion energies used. These ripples show asymmetric side-facets where the degree of asymmetry decreases for increasing ion-energy. They show short-range ordering; the ripple wavelength and thickness of the amorphous layer increase as a function of the ion-energy. Acknowledgement: One of the authors (A.B.) would like to thank the ESRF for financial support and the ID01 beamline-staff for providing beamtime and valuable help. [1] M.A. Makeev, R Cuerno and A.-L. Barabasi, Nuc. Inst. and Meth. in Phys. Res. B 197, 185 (2002). [2] S.Hazra, T.K. Chini, M.S. Sanyal, J. Grenzer U. Pietsch , Phys. Rev. B 70, 121307(R) (2004). [3] S. Grigorian, J. Grenzer, D. P. Datta, S. Hazra, T.K. Chini, M. K. Sanyal and U. Pietsch, Appl. Phys. Lett 89, 231915 (2006).

Ion beam implantation is one of the major technologies in the semiconductor industry. Although there have been a lot of technological applications there is relatively little known about the structural changes of semiconductors after ion beam implantation. Of particular interest is the creation of lateral nanostructures using different methods of ion beam implantation. One method is to exploit the phenomenon of self-organization during the Ar+ implantation using an oblique ion beam bombarding the sample surface. This results in the growth of the periodic wavelike or ripple like morphology which is produced as a result of the interplay between a roughening process caused by the ion beam erosion (sputtering) of surface and a smoothening process caused by thermal or ion-beam-induced surface diffusion. At least the developing surface structures can be well described in terms of the Bradley-Harper model and respective extensions. Lot of investigations is going on to understand the formation of such nano-structures but mostly looking on the top surface. However, the ion energy dissipation takes place below the surface. Thus the investigation of the interface between the almost amorphous top layer and the underlying crystalline material is important for the understanding of pattern formation. Detailed studies on the ion induced ripple formation on Si have revealed that they appear only in a limited range of incident angles. The ripple wavelength appears to be linearly dependent on the ion energy and varies in between several nm and hundreds of nm when the ion energy changes from 0.5 to 100 keV. If the ion beam energy was increased up to the 100keV range one-dimensional ripple structures on Si (100) surfaces with wave lengths up to the micro meter range have been observed.Recent investigations using TEM and depth resolved X-ray diffraction methods discovered that the ripples at the surface are followed by a nearly sinusoidal shaped buried interface between the strongly damaged, not completely amorphous near-surface region and the crystalline material. Depending on the chosen energy and the irradiation dose the “amorphous” layer could be reach a thickness of 100nm and corresponds fairly well to the end of range distance of implanted ions.

We report on in-situ investigations of a recrystallization process of an ion beam-induced rip-pled silicon. The one dimensional ripple structure was created by 40Ar+ ion irradiation with dose of ~5x1017 ions/cm2 under an angle 60° with respect to the surface normal at an energy of 60 keV. At the surface the induced ripples have a period and an amplitude of about 915nm and 80nm, respectively. Structure and morphology of ripples were studied by two x-ray grazing in-cidence scattering methods, transmission electron microscopy and atomic force microscopy. X-ray grazing-incidence amorphous scattering pattern were recorded in-situ in a range from 250°C to 750°C. Up to about 500°C mainly we found a single broad scattering maximum cor-responding to the Si(111) inter-planar distances. At higher temperature these peaks becomes sharp and intense indicating the onset of a re-crystallization process in the amorphous top layer. Two processes were found, a formation of crystalline islands at the top of amorphous surface ripples and a growth of polycrystalline twins close to the former amorphous-crystalline inter-face.

Investigations of ripples morphology of Ar+ implanted silicon are presented. Particularly we have measured the degree of amorphization as a function of implantation dose by means of x-ray grazing amorphous scattering (GIAS). For perfect silicon crystals GIAS shows monotone decreasing background intensity versus the 2theta scattering angle. For implanted samples we find two broad peaks indicating short-range ordering of amorphous material changing with the penetration depth of probing x-ray. The appearance of embedded crystalline domains is indicated by additional sharp peaks on top of the amorphous scattering. 2theta- scans taken at different azimuthal angles of sample display strong anisotropy of amorphous scattering which only slightly changes with dose. Based on these results we suggest a model of dose-dependent amorphization. The strong damage of crystalline structure takes place along particular crystallographic directions and strongly reveal for low doses, before it becomes complete amorphous and mostly uniform at high doses of implantation. This mechanism can be used as a hint for the appearance of a ripples amorphous-crystalline interface found at these structures. We would like to thank S. Hazra and T.K. Chini for research collaborations. This work was supported by the DST-DAAD India-Germany

The morphological evolution of surfaces during ion-beam irradiation has attracted significant interest due to possibility of the evelopment and the controlling of self-organization in nanostructures. Pattering and texture on nanometer length scale at metal and semiconductor surfaces has become a topic of intense research. In particular the surface and subsurface ripple formation under 40Ar+ ion-beam irradiation of Si (100) crystal has been studied recently. Based on transmission electron microscopy (TEM), atomic force microscopy (AFM) and x-ray analysis a dramatic effect of the ripple formation was found at an irradiation energy of 60 keV. Apart from the crystalline part, the amorphization process is very important for understanding the amorphous-crystalline interface and the ripple formation mechanism. The dose of the ion beam was varied in the range from low 3e16 up to high 7e17 ions/cm^2 at an incident angle of 60° and an energy of 60 keV. Keeping the optimized irradiation parameters constant we have measured the degree of amorphization as a function of Ar+ dose by means of x-ray grazing incidence amorphous scattering (GIAS). For irradiated samples we found two broad peaks indicating a short-range ordering of amorphous material which does what with the penetration depth of probing x-ray. GIAS profiles probed at different azimuthal angles display a strong anisotropy of the amorphous scattering. The strong damage of the crystalline structure takes place along particular crystallographic directions. This is for the directional anisotropy: and strongly reveal for low doses, before it becomes completly amorphous and mostly uniform at high doses of implantation. Such behavior can be explained taking into account the anisotropy of the crystalline material and orientation of the ion beam with respect crystallographic orientation of the substrate material. This work was supported by the DST-DAAD India-Germany Collaborative Program. We are grateful to ID1 beamline staff for the support at ESRF.

Finite-sheeted covering mappings onto compact connected groups are studied. We show that for a covering mapping from a connected Hausdorff topological space onto a compact (in general, non-abelian) group there exists a topological group structure on the covering space such that the mapping becomes a homomorphism of groups. To prove this fact we construct an inverse system of covering mappings onto Lie groups which approximates the given covering mapping. As an application, it is shown that a covering mapping onto a compact connected abelian group G must be a homeomorphism provided that the character group of G admits division by degree of the mapping. We also get a criterion for triviality of coverings in terms of means and prove that each finite covering of G is equivalent to a polynomial covering. © 2006 Elsevier B.V. All rights reserved.

The mechanism of ion-induced ripple-like structure formation at top-surface and at buried crystalline surface is being studied extensively by several techniques. Using the technique of grazing incidence x-ray scattering, we have measured the degree of amorphization in the region between buried-crystalline and top-surface ripples in silicon as a function of argon-ion dose. Two broad peaks of the amorphous scattering profiles were probed by varying the penetration depth of x-ray and revealed short-range ordering. Our results show that the strong damage of crystalline structure caused by ion bombardment takes place along particular crystallographic directions and displays ion dose dependent behavior.

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