1. Proton irradiation on Hydrogenated Amorphous Silicon flexible devices
- Author
-
Menichelli, M., Aziz, S., Bashiri, A., Bizzarri, M., Buti, C., Calcagnile, L., Calvo, D., Caprai, M., Caputo, D., Caricato, A. P., Catalano, R., Cazzanelli, M., Cirio, R., Cirrone, G. A. P., Cittadini, F., Croci, T., Cuttone, G., de Cesare, G., De Remigis, P., Dunand, S., Fabi, M., Frontini, L., Grimani, C., Guarrera, M., Hasnaoui, H., Ionica, M., Kanxheri, K., Large, M., Lenta, F., Liberali, V., Lovecchio, N., Martino, M., Maruccio, G., Maruccio, L., Mazza, G., Monteduro, A. G., Morozzi, A., Nascetti, A., Pallotta, S., Papi, A., Passeri, D., Pedio, M., Petasecca, M., Petringa, G., Peverini, F., Placidi, P., Polo, M., Quaranta, A., Quarta, G., Rizzato, S., Sabbatini, F., Servoli, L., Stabile, A., Talamonti, C., Thomet, J. E., Mora, M. S. Vasquez, Villani, M., Wheadon, R. J., Wyrsch, N., Zema, N., and Tosti, L.
- Subjects
Physics - Instrumentation and Detectors ,Physics - Applied Physics - Abstract
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100{\deg}C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices., Comment: This paper was presented at the IEEE-RTSD2024 in Tampa (USA) with presentation number: R08-04
- Published
- 2024