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950 results on '"Groeseneken, Guido"'

1. Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

Author

Feijoo, Pedro C., Kauerauf, Thomas, Toledano-Luque, María, Togo, Mitsuhiro, Andrés, Enrique San, and Groeseneken, Guido

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-k and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 1e-8 cm2, implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents., Comment: 15 pages, 7 figures

Published
2024
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2. Comprehensive Modeling of Graphene Resistivity

Author

Contino, Antonino, Ciofi, Ivan, Wu, Xiangyu, Asselberghs, Inge, Wilson, Christopher J., Tokei, Zsolt, Groeseneken, Guido, and Soree, Bart

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing the many resistivity models reported in literature, several discrepancies can be found, as well as a number of inconsistencies between formulas. In this paper, we revise the main scattering mechanisms in graphene, based on theory and goodness of fit to in-house experimental data. In particular, a step-by-step evaluation of the interaction between electrons and optical phonons is carried out, where we demonstrate that the process of optical phonon emission scattering is completely suppressed for all low-field applications and all temperatures in the range of interest, as opposed to what is often reported in literature. Finally, we identify the best scattering models based on the goodness of fit to experimental data., Comment: 7 pages, 5 figures, to be submitted to Journal of Applied Physics

Published
2017

7. Channel Hot Carriers and Other Reliability Mechanisms

Author

Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido, Itoh, Kiyoo, Series editor, Lee, Thomas H, Series editor, Sakurai, Takayasu, Series editor, Sansen, Willy M. C., Series editor, Schmitt-Landsiedel, Doris, Series editor, Franco, Jacopo, Kaczer, Ben, and Groeseneken, Guido

Published
2014
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8. Conclusions and Perspectives

Author

Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido, Itoh, Kiyoo, Series editor, Lee, Thomas H, Series editor, Sakurai, Takayasu, Series editor, Sansen, Willy M. C., Series editor, Schmitt-Landsiedel, Doris, Series editor, Franco, Jacopo, Kaczer, Ben, and Groeseneken, Guido

Published
2014
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9. Negative Bias Temperature Instability in Nanoscale Devices

Author

Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido, Itoh, Kiyoo, Series editor, Lee, Thomas H, Series editor, Sakurai, Takayasu, Series editor, Sansen, Willy M. C., Series editor, Schmitt-Landsiedel, Doris, Series editor, Franco, Jacopo, Kaczer, Ben, and Groeseneken, Guido

Published
2014
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10. Techniques and Devices

Author

Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido, Itoh, Kiyoo, Series editor, Lee, Thomas H, Series editor, Sakurai, Takayasu, Series editor, Sansen, Willy M. C., Series editor, Schmitt-Landsiedel, Doris, Series editor, Franco, Jacopo, Kaczer, Ben, and Groeseneken, Guido

Published
2014
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11. Negative Bias Temperature Instability in (Si)Ge pMOSFETs

Author

Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido, Itoh, Kiyoo, Series editor, Lee, Thomas H, Series editor, Sakurai, Takayasu, Series editor, Sansen, Willy M. C., Series editor, Schmitt-Landsiedel, Doris, Series editor, Franco, Jacopo, Kaczer, Ben, and Groeseneken, Guido

Published
2014
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12. Degradation Mechanisms

Author

Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido, Itoh, Kiyoo, Series editor, Lee, Thomas H, Series editor, Sakurai, Takayasu, Series editor, Sansen, Willy M. C., Series editor, Schmitt-Landsiedel, Doris, Series editor, Franco, Jacopo, Kaczer, Ben, and Groeseneken, Guido

Published
2014
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13. Introduction

Author

Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido, Itoh, Kiyoo, Series editor, Lee, Thomas H, Series editor, Sakurai, Takayasu, Series editor, Sansen, Willy M. C., Series editor, Schmitt-Landsiedel, Doris, Series editor, Franco, Jacopo, Kaczer, Ben, and Groeseneken, Guido

Published
2014
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14. Impact of Sub-μm Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era

Author

Serbulova, Kateryna, Chen, Shih-Hung, Hellings, Geert, Veloso, Anabela, Jourdain, Anne, Boeck, Jo De, and Groeseneken, Guido

Abstract

Sub- $\mu \text{m}$ wafer thicknesses are an essential enabler for the high-density nano through silicon via (nTSV) in design-technology co-optimization (DTCO) and system-technology co-optimization (STCO) scaling options. The measurement and TCAD results prove that decreasing the wafer thickness to 0.3 $\mu \text{m}$ is beneficial to latch-up prevention due to lower $\beta $ -gain, which originates from the strong recombination in well-base regions. Moreover, the current flow for sub- $\mu \text{m}$ Si thickness will be impacted and confined in a thinner bulk region. Additionally, the internal guard rings (GRs) efficiency increases by nearly 100% for $0.3~\mu \text{m}$ Si thickness. On the contrary, the holding voltage is unchanged due to the dominant impact of increased well resistances over $\beta $ -gain reduction. Also, the thermal impact on sub- $\mu \text{m}$ Si thickness further increases latch-up risk due to reduced heat dissipation.

Published
2024
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20. Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs

Author

Vandemaele, Michiel, Kaczer, Ben, Tyaginov, Stanislav, Bury, Erik, Chasin, Adrian, Franco, Jacopo, Makarov, Alexander, Mertens, Hans, Hellings, Geert, and Groeseneken, Guido

Subjects
Technology, Science & Technology, TCAD, STRESS, gate-all-around FETs, Physics, Engineering, Multidisciplinary, Engineering, Electrical & Electronic, trapping, interface defects, Physics, Applied, MODEL, Engineering, Border traps, hot-carrier degradation, nanosheet FETs, forksheet FETs, Physical Sciences, oxide defects, nanowire FETs, simulations
Abstract

ispartof: 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) ispartof: IEEE International Reliability Physics Symposium (IRPS) location:TX, Dallas date:27 Mar - 31 Mar 2022 status: published

Published
2022

24. ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

Author

Wu, Wei-Min, primary, Ker, Ming-Dou, additional, Chen, Shih-Hung, additional, Sibaja-Hernandez, Arturo, additional, Yadav, Sachin, additional, Peralagu, Uthayasankaran, additional, Yu, Hao, additional, Alian, AliReza, additional, Putcha, Vamsi, additional, Parvais, Bertrand, additional, Collaert, Nadine, additional, and Groeseneken, Guido, additional

Published
2022
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26. Phonon-assisted tunneling in direct-bandgap semiconductors.

Author

Mohammed, Mazharuddin, Verhulst, Anne S., Verreck, Devin, Van de Put, Maarten L., Magnus, Wim, Sorée, Bart, and Groeseneken, Guido

Subjects
TUNNEL field-effect transistors, QUANTUM tunneling, PHONONS, BAND gaps, SEMICONDUCTORS, ELECTRON-phonon interactions
Abstract

In tunnel field-effect transistors, trap-assisted tunneling (TAT) is one of the probable causes for degraded subthreshold swing. The accurate quantum-mechanical (QM) assessment of TAT currents also requires a QM treatment of phonon-assisted tunneling (PAT) currents. Therefore, we present a multi-band PAT current formalism within the framework of the quantum transmitting boundary method. An envelope function approximation is used to construct the electron-phonon coupling terms corresponding to local Fröhlich-based phonon-assisted inter-band tunneling in direct-bandgap III-V semiconductors. The PAT current density is studied in up to 100 nm long and 20 nm wide p-n diodes with the 2- and 15-band material description of our formalism. We observe an inefficient electron-phonon coupling across the tunneling junction. We further demonstrate the dependence of PAT currents on the device length, for our non-self-consistent formalism which neglects changes in the electron distribution function caused by the electron-phonon coupling. Finally, we discuss the differences in doping dependence between direct band-to-band tunneling and PAT current. [ABSTRACT FROM AUTHOR]

Published
2019
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27. Self-consistent procedure including envelope function normalization for full-zone Schrödinger-Poisson problems with transmitting boundary conditions.

Author

Verreck, Devin, Verhulst, Anne S., Van de Put, Maarten L., Sorée, Bart, Magnus, Wim, Collaert, Nadine, Mocuta, Anda, and Groeseneken, Guido

Subjects
SCHRODINGER operator, SIMULATION methods & models, WAVE mechanics, ELECTROSTATICS, POISSON'S equation, FIELD-effect transistors
Abstract

In the quantum mechanical simulation of exploratory semiconductor devices, continuum methods based on a k ⋅ p/envelope function model have the potential to significantly reduce the computational burden compared to prevalent atomistic methods. However, full-zone k ⋅ p/envelope function simulation approaches are scarce and existing implementations are not self-consistent with the calculation of the electrostatic potential due to the lack of a stable procedure and a proper normalization of the multi-band envelope functions. Here, we therefore present a self-consistent procedure based on a full-zone spectral k ⋅ p/envelope function band structure model. First, we develop a proper normalization for the multi-band envelope functions in the presence of transmitting boundary conditions. This enables the calculation of the free carrier densities. Next, we construct a procedure to obtain self-consistency of the carrier densities with the electrostatic potential. This procedure is stabilized with an adaptive scheme that relies on the solution of Poisson's equation in the Gummel form, combined with successive underrelaxation. Finally, we apply our procedure to homostructure In 0.53 Ga 0.47 As tunnel field-effect transistors (TFETs) and staggered heterostructure GaAs 0.5 Sb 0.5 /In 0.53 Ga 0.47 As TFETs and show the importance of self-consistency on the device predictions for scaled dimensions. [ABSTRACT FROM AUTHOR]

Published
2018
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37. Electronic voltage control of magnetic anisotropy at room temperature in high-kappa SrTiO3/Co/Pt trilayer

Author

Vermeulen, Bart F, Swerts, Johan, Couet, Sebastien, Popovici, Mihaela, Radu, Iuliana P, Van de Vondel, Joris, Temst, Kristiaan, Groeseneken, Guido, and Martens, Koen

Subjects
MOMENT, Technology, Science & Technology, SYMMETRY, Materials Science, X-RAY-ANALYSIS, Materials Science, Multidisciplinary, FILMS, OXYGEN
Abstract

ispartof: PHYSICAL REVIEW MATERIALS vol:4 issue:11 status: published

Published
2020

43. Reliability of p-GaN Gate HEMTs in Reverse Conduction

Author

Cingu, Deepthi, primary, Li, Xiangdong, additional, Bakeroot, Benoit, additional, Amirifar, Nooshin, additional, Geens, Karen, additional, Jacobs, Kristof J. P., additional, Zhao, Ming, additional, You, Shuzhen, additional, Groeseneken, Guido, additional, and Decoutere, Stefaan, additional

Published
2021
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49. Introduction

Author

Franco, Jacopo, primary, Kaczer, Ben, additional, and Groeseneken, Guido, additional

Published
2013
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