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2. Consequences of lateral and horizontal point defect diffusion through interfaces in green semiconductor lasers based on InAlGaN grown on substrates with different dislocation density

Author

Grzanka, E., primary, Hrytsak, R., additional, Grzanka, S., additional, Lachowski, A., additional, Grabowski, M., additional, Marona, L., additional, Michalowski, P., additional, Czernecki, R., additional, Smalc-Koziorowska, J., additional, and Leszczyński, M., additional

Published
2023
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5. Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing a large substrate misorientation angle

Author

Kafar, A., primary, Sakaki, A., additional, Ishii, R., additional, Shojiki, K., additional, Stanczyk, S., additional, Gibasiewicz, K., additional, Staszczak, G., additional, Marona, L., additional, Schiavon, D., additional, Grzanka, S., additional, Krukowski, S., additional, Suski, T., additional, Perlin, P., additional, Funato, M., additional, and Kawakami, Y., additional

Published
2021
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7. Influence of substrate misorientation on the emission and waveguiding properties of a blue (In,Al,Ga)N laser-like structure studied by synchrotron radiation microbeam X-ray diffraction

Author

Kafar, A., primary, Sakaki, A., additional, Ishii, R., additional, Stanczyk, S., additional, Gibasiewicz, K., additional, Matsuda, Y., additional, Schiavon, D., additional, Grzanka, S., additional, Suski, T., additional, Perlin, P., additional, Funato, M., additional, and Kawakami, Y., additional

Published
2021
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9. Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

Author

Kafar, A., primary, Ishii, R., additional, Gibasiewicz, K., additional, Matsuda, Y., additional, Stanczyk, S., additional, Schiavon, D., additional, Grzanka, S., additional, Tano, M., additional, Sakaki, A., additional, Suski, T., additional, Perlin, P., additional, Funato, M., additional, and Kawakami, Y., additional

Published
2020
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13. Low dislocation density, high power InGaN laser diodes

Author

Perlin, Piotr, Leszczỹski, M., Prystawko, P., Wisniewski, P., Czernetzki, R., Skierbiszewski, C., Nowak, G., Purgal, W., Weyher, J. L., Kamler, G., Borysiuk, J., Krysko, M., Sarzynski, M., Suski, T., Litwin-Staszewska, E., Dmowski, L., Franssen, G., Grzanka, S., Swietlik, T., Grzegory, I., Bockowski, M., Lucznik, B., Porowski, S., Gorczyca, L, Bering, A., Krupczynski, W., Makarowa, I., Wisniewska, R., and Libura, A.

Published
2004
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14. Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Author

Staszczak, G., Gorczyca, I., Grzanka, E., Smalc-Koziorowska, J., Targowski, G., Czernecki, R., Siekacz, M., Grzanka, S., Skierbiszewski, C., Schulz, T., Christensen, N. E., and Suski, T.

Subjects
MOVPE, III-nitride semiconductors, superlattices, POLARIZATION, GAINN, QUANTUM-WELLS, band structure, LIGHT-EMITTING-DIODES, III-V NITRIDES, ELECTRIC-FIELDS
Abstract

To obtain short period superlattices (SPLS) of InxGa1-xN/GaN in most cases molecular beam epitaxy has been applied. In this work the metal-organic vapor phase epitaxy was used for obtaining similar structures and their quality as well as light emission features are studied. Thanks to control of growth parameters it was possible to fabricate InxGa1-xN/GaN SPSLs with structural quality of structures grown by MBE. They contain around 30% of indium in quantum wells (QWs) and different number m of atomic monolayers in QWs, and n. in the barriers. X-ray diffraction and transmission electron microscope measurements have confirmed that the designed SPSLs structures were obtained. An agreement between the experimental results of photoluminescence measurements and theoretically predicted band gap behavior of SPSLs composed of mIn(x)Ga(1-x)N/nGaN was achieved. Built-in electric field in quantum wells and barriers of the selected structures were determined using a simplified method of calculation. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Published
2017
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16. Switching of exciton character in double InGaN/GaN quantum wells

Author

Suski, T., primary, Staszczak, G., additional, Korona, K. P., additional, Lefebvre, P., additional, Monroy, E., additional, Drozdz, P. A., additional, Muzioł, G., additional, Skierbiszewski, C., additional, Kulczykowski, M., additional, Matuszewski, M., additional, Grzanka, E., additional, Grzanka, S., additional, Pieniak, K., additional, Gibasiewicz, K., additional, Khachapuridze, A., additional, Smalc-Koziorowska, J., additional, Marona, L., additional, and Perlin, P., additional

Published
2018
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18. A deep acceptor defect responsible for the yellow luminescence in GaN and AlGaN.

Author

Kamyczek, P., Placzek-Popko, E., Kolkovsky, Vl., Grzanka, S., and Czernecki, R.

Subjects
LUMINESCENCE, DEEP level transient spectroscopy, SPECTRUM analysis, ELECTROLUMINESCENCE, GALLIUM nitride, GALLIUM compounds
Abstract

In the present study, the electrical and optical properties of deep defects in p-i-n GaN junction and AlGaN/GaN heterojunction are investigated by means of the deep level transient spectroscopy (DLTS), Laplace DLTS, and electroluminescence (EL) techniques. We demonstrate that in both structures the yellow luminescence (YL) is a dominant band in the EL spectra recorded at room temperature. We correlate the YL band with the minority DLTS peaks observed at about 370 K. A gallium vacancy-related defect seems to be a probable candidate as to the origin of the defect. Another dominant majority peak observed in the DLTS studies was concluded to be linked with a donor-like defect in the upper half of the bandgap. The origin of the defect is discussed. [ABSTRACT FROM AUTHOR]

Published
2012
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19. Cavity suppression in nitride based superluminescent diodes.

Author

Kafar, A., Stanczyk, S., Grzanka, S., Czernecki, R., Leszczynski, M., Suski, T., and Perlin, P.

Subjects
INDIUM gallium nitride, DIODES, WAVEGUIDES, LUMINESCENCE, LIGHT sources
Abstract

We have fabricated two types of InGaN superluminescent diodes applying two different concepts of cavity suppression: a tilted waveguide geometry and passive absorber solution. Both types of devices showed superluminescence behavior, but both eventually lased under the application of high enough current. The lasing threshold turned out to be higher for tilted waveguide devices. By using long (2 mm) waveguides, we managed to demonstrate the power in superluminescent mode exceeding 100 mW in blue/violet part of the spectrum. [ABSTRACT FROM AUTHOR]

Published
2012
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20. Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates.

Author

Suski, T., Staszczak, G., Grzanka, S., Czernecki, R., Litwin-Staszewska, E., Piotrzkowski, R., Dmowski, L. H., Khachapuridze, A., Kryśko, M., Perlin, P., and Grzegory, I.

Subjects
MAGNESIUM, INDIUM, GALLIUM nitride, SUBSTRATES (Materials science), PHOTOLUMINESCENCE, SAPPHIRES
Abstract

Systematic studies of InxGa1-xN layers (0≤x<0.13) doped with Mg were performed. Samples were grown by metal organic vapor phase epitaxy. Intermediate Mg doping in the range of 2×1019 cm-3 was chosen to achieve a maximum hole carrier concentration, pH (as measured by Hall effect) of 4×1018 cm-3 in samples with high x. We confirmed reports on decreasing resistivity in InxGa1-xN:Mg epitaxial layers observed with increasing x. This finding is very important for applications. In the performed research we attempted to separate contributions to pH increase resulting from increase in In-content and an associated decrease in growth temperature, Tgr (necessary to obtain high x). For this purpose In-content increase was achieved by means of either (i) lowering the growth temperature (from 1020 to 830 °C) or by (ii) varying an intended GaN substrate miscut. We demonstrated that the increase in pH in InxGa1-xN:Mg is caused by higher In concentration while a drop in Tgr plays a secondary role. Studies of photoluminescence in the InGaN:Mg layers exhibit band-to-band radiative recombination which has created much controversy. The most important feature of samples grown at temperatures 860 °C and below, is a green band observed in InGaN:Mg layers (not in GaN:Mg obtained at the same Tgr) dominating the whole spectrum at room temperature. Its maximum shifts from 2.5 to 2.2 eV with increasing x up to 0.13. Presence of this band was previously reported for InGaN:Mg. We present arguments that it originates from deep donor level. [ABSTRACT FROM AUTHOR]

Published
2010
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21. Carrier recombination mechanisms in nitride single quantum well light-emitting diodes revealed by photo- and electroluminescence.

Author

Grzanka, S., Franssen, G., Targowski, G., Czernecki, R., Khachapuridze, A., Makarowa, I., Wisniewska, R., Mensz, P., Perlin, P., and Suski, T.

Subjects
*LIGHT emitting diodes, *NITRIDES, *QUANTUM wells, *RECOMBINATION in semiconductors, *PHOTOLUMINESCENCE, *ELECTROLUMINESCENCE
Abstract

Light emission of nitride single quantum well light-emitting diodes operating in the range from 395 to 440 nm, grown by metal-organic vapor phase epitaxy, was investigated by means of photoluminescence (PL) and electroluminescence (EL) spectroscopies as functions of temperature and current injection level. The indium content of the active layers was varied via the growth temperature, which ranged from 770 to 810 °C. It was found that samples with higher indium contents (grown at lower temperatures) exhibit larger luminescence full widths at half maximum (FWHMs) and higher EL intensities. The larger FWHM points to a larger amplitude of the potential profile fluctuations, which suggests that these fluctuations may be useful for the increase in the device output power. In agreement with this result, the performed examination by PL measurements shows large thermal stability of the luminescence intensity for the lowest growth temperature sample. On the other hand, a nontrivial dependence of thermal stability on growth temperature suggests the additional involvement of different nonradiative recombination center concentrations in the individual samples, for example, because of dissimilar substrate qualities. [ABSTRACT FROM AUTHOR]

Published
2008
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22. Efficient radiative recombination and potential profile fluctuations in low-dislocation InGaN/GaN multiple quantum wells on bulk GaN substrates.

Author

Franssen, G., Grzanka, S., Czernecki, R., Suski, T., Marona, L., Riemann, T., Christen, J., Teisseyre, H., Valvin, P., Lefebvre, P., Perlin, P., Leszczyński, M., and Grzegory, I.

Abstract

We investigated the relation between structural properties and carrier recombination processes in InGaN/GaN multiple quantum well (MQW) structures with quantum well widths of 3 and 9 nm, grown by metal-organic chemical-vapor deposition on bulk GaN crystals. Quantum barriers of the samples are heavily n-type doped in order to effectively screen the large polarization-induced electric fields which commonly occur in hexagonal InGaN/GaN quantum structures. High thermal stability in these structures, reflected by strong photoluminescence (PL) even above 400 K, is attributed to a combination of low-dislocation densities and potential profile fluctuations in the InGaN/GaN quantum wells. The role of potential profile fluctuations is further investigated by time-resolved photoluminescence and cathodoluminescence (CL) mapping. Comparison of both samples shows that the sample with 3-nm-wide QWs exhibits (i) a larger width of the PL peak in the temperature range of 8-420 K, (ii) a higher amplitude of potential profile fluctuations as measured by CL mapping, and (iii) higher radiative and nonradiative PL recombination times. At the same time a much weaker drop of PL intensity with temperature is recorded on the sample with 9-nm-wide QWs. Our results show that, contrary to intuitive expectation, a decrease of the potential profile fluctuation amplitude can be helpful in enhancing the radiative recombination efficiency, particularly at high temperatures. [ABSTRACT FROM AUTHOR]

Published
2005
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30. Interplay of stimulated emission and Auger-like effect in violet and blue InGaN laser diodes

Author

Grzanka, S., Perlin, P., Czernecki, R., Marona, L., Bockowski, M., Lucznik, B., Leszczynski, M., Khachapuridze, A., Goss, J., Schwarz, U., Suski, T., and Publica

Subjects
dislocation, InGaN, stimulated emission, LED, recombination, laser
Abstract

We have studied two types of InGaN laser diodes emitting at 410 and 440 nm, looking for the presence of the efficiency "droop" and its influence on the performance of these devices. By measuring the devices in two experimental geometries: a) along the resonator axis, b) perpendicularly to the cavity, we were able to conclude that the light emission process in these laser diodes operating below the threshold are governed by two mechanisms: Auger-like effect and the stimulated recombination. The competition of these two mechanisms leads to the suppression of the droop if the light is observed along the axis of the cavity. The relatively low onset of the stimulated recombination may account for the robustness of these devices against the nonradiative process (Auger-like recombination) appearing at high current densities. Additionally, we performed the characterization of InGaN light emitting diodes grown on substrates with varied In content and defect density. The results clearly demonstrate that the droop is not related in any way with the above mentioned parameters at least in the dislocation density range between 105 and 109 cm-2 and In composition range between 0.1-0.15.

Published
2010

31. Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals

Author

Czernecki, Robert, Perlin, Piotr, Franssen, G., Swietlik, T., Borysiuk, J., Grzanka, S., Lefebvre, Pierre, Leszczynski, Michal, Grzegory, Izabella, Porowski, Sylvester, Suski, Tadeusz, Institute of High Pressure Physics [Warsaw] (IHPP), Polska Akademia Nauk = Polish Academy of Sciences (PAN), Groupe d'étude des semiconducteurs (GES), and Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2006

32. Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Author

Sawicka, M., primary, Muziol, G., additional, Turski, H., additional, Grzanka, S., additional, Grzanka, E., additional, Smalc-Koziorowska, J., additional, Weyher, J. L., additional, Chèze, C., additional, Albrecht, M., additional, Kucharski, R., additional, Perlin, P., additional, and Skierbiszewski, C., additional

Published
2014
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33. Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

Author

Sawicka, M., primary, Chèze, C., additional, Turski, H., additional, Muziol, G., additional, Grzanka, S., additional, Hauswald, C., additional, Brandt, O., additional, Siekacz, M., additional, Kucharski, R., additional, Remmele, T., additional, Albrecht, M., additional, Krysko, M., additional, Grzanka, E., additional, Sochacki, T., additional, and Skierbiszewski, C., additional

Published
2014
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35. GaN lasers for quantum technologies

Author

Razeghi, Manijeh, Lewis, Jay S., Tournié, Eric, Khodaparast, Giti A., Najda, S. P., Perlin, P., Suski, T., Marona, L., Stanczyk, S., Wisniewski, P., Grzanka, S., Schiavon, D., and Leszczyński, M.

Published
2019
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37. Electronic tuning of integrated blue-violet GaN tunable coupled-cavity laser

Author

Guziy, O. (author), Grzanka, S. (author), Leszczynski, M. (author), Perlin, P. (author), Schemmann, M. (author), Salemink, H.W.M. (author), Guziy, O. (author), Grzanka, S. (author), Leszczynski, M. (author), Perlin, P. (author), Schemmann, M. (author), and Salemink, H.W.M. (author)

Abstract

We demonstrate an integrated tunable coupled-cavity InGaN/GaN laser with the emission wavelength centered on 409 nm. The electronic tuning range was 1.6 nm and threshold currents were 650 mA per cavity for 8.7-?m-wide laser ridges. Multimode laser emission with an average full width at half maximum of 0.3 nm was observed. We estimate the refractive index change due to free-carrier injection and optical gain to explain the experimental tuning range., Quantum Nanoscience, Electrical Engineering, Mathematics and Computer Science

Published
2012

40. Graded-index separate confinement heterostructure InGaN laser diodes

Author

Stańczyk, S., primary, Czyszanowski, T., additional, Kafar, A., additional, Goss, J., additional, Grzanka, S., additional, Grzanka, E., additional, Czernecki, R., additional, Bojarska, A., additional, Targowski, G., additional, Leszczyński, M., additional, Suski, T., additional, Kucharski, R., additional, and Perlin, P., additional

Published
2013
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42. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

Author

Sawicka, M., primary, Chèze, C., additional, Turski, H., additional, Muziol, G., additional, Grzanka, S., additional, Hauswald, C., additional, Brandt, O., additional, Siekacz, M., additional, Kucharski, R., additional, Remmele, T., additional, Albrecht, M., additional, Krysko, M., additional, Grzanka, E., additional, Sochacki, T., additional, and Skierbiszewski, C., additional

Published
2013
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46. Low dislocation density, high power InGaN laser diodes

Author

Perlin, P., Leszczynski, M., Prystawko, P., Wisniewski, P., Czernetzki, R., Skierbiszewski, C., Nowak, G., Purgal, W., Weyher, J.L., Kamler, G., Borysiuk, J., Krysko, M., Sarzynski, M., Suski, T., Litwin-Staszewska, E., Dmowski, L., Franssen, G.M., Grzanka, S., Swietlik, T., Grzegory, I., Bockowski, M., Lucznik, B., Porowski, S., Gorczyca, L., Bering, A., Krupczynski, W., Makarowa, I., Wisniewska, R., Libura, A., Perlin, P., Leszczynski, M., Prystawko, P., Wisniewski, P., Czernetzki, R., Skierbiszewski, C., Nowak, G., Purgal, W., Weyher, J.L., Kamler, G., Borysiuk, J., Krysko, M., Sarzynski, M., Suski, T., Litwin-Staszewska, E., Dmowski, L., Franssen, G.M., Grzanka, S., Swietlik, T., Grzegory, I., Bockowski, M., Lucznik, B., Porowski, S., Gorczyca, L., Bering, A., Krupczynski, W., Makarowa, I., Wisniewska, R., and Libura, A.

Abstract

Item does not contain fulltext

Published
2004

48. InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Author

Skierbiszewski, C., primary, Siekacz, M., additional, Turski, H., additional, Muzioł, G., additional, Sawicka, M., additional, Feduniewicz-Żmuda, A., additional, Smalc-Koziorowska, J., additional, Perlin, P., additional, Grzanka, S., additional, Wasilewski, Z. R., additional, Kucharski, R., additional, and Porowski, S., additional

Published
2011
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