Search

The interplay among various order parameters in quantum materials frequently results in exotic ground states and may facilitate revolutionary functional control. In the A-site-ordered manganite double perovskite SmBaMn2O6, it was demonstrated that an anisotropic strain of less than 0.1% can modulate electrical transport by over 6% near the Neel temperature. It is hypothesized that this phenomenon is due to the high sensitivity of spin fluctuation near the antiferromagnetic ordering to lattice distortion, resulting in significant changes in transport properties. This study offers a compelling approach for investigating the interaction between the electric properties of SmBaMn2O6 and in situ anisotropic strain. [ABSTRACT FROM AUTHOR]

The efficiency of antimony selenide (Sb2Se3) solar cells is still limited by significant interface and deep‐level defects, in addition to carrier recombination at the back contact surface. This paper investigates the use of lithium (Li) ions as dopant for Sb2Se3 films, using lithium hydroxide (LiOH) as a dopant medium. Surprisingly, the LiOH solution not only reacts at the back surface of the Sb2Se3 film but also penetrate inside the film along the (Sb4Se6)n molecular chain. First, the Li ions modify the grain boundary's carrier type and create an electric field between p‐type grain interiors and n‐type grain boundary. Second, a gradient band structure is formed along the vertical direction with the diffusion of Li ions. Third, carrier collection and transport are improved at the surface between Sb2Se3 and the Au layer due to the reaction between the film and alkaline solution. Additionally, the diffusion of Li ions increases the crystallinity, orientation, surface evenness, and optical electricity. Ultimately, the efficiency of Sb2Se3 solar cells is improved to 7.57% due to the enhanced carrier extraction, transport, and collection, as well as the reduction of carrier recombination and deep defect density. This efficiency is also a record for CdS/Sb2Se3 solar cells fabricated by rapid thermal evaporation. [ABSTRACT FROM AUTHOR]

Antimony selenosulphide (Sb2(S,Se)3) has undergone rapid development recently owing to its adjustable band gap, high light-absorption coefficient and excellent optoelectronic properties as well as its safety, non-toxicity and low-cost aspects. High-efficiency Sb2(S,Se)3 thin film solar cells use Spiro-OMeTAD hollow-hole transport materials to construct n–i–p (n-type, intrinsic and p-type) structures; however, the poor stability and high cost of Spiro-OMeTAD limit its large-scale application in Sb2(S,Se)3 solar cells. Herein, in order to address these problems, we report stable and efficient Sb2(S,Se)3 solar cells enabled by various phthalocyanine hole transport layers (HTLs). The pure Pc and Sb2(S,Se)3 absorbers exhibited improved valence band alignment compared to Spiro-OMeTAD. The device with the tuning concentration of phthalocyanine solution shows high homogeneity and carrier transport. The increased hole transport capability of the Pc material facilitated a higher JSC in the Pc device, resulting in a photoelectric conversion efficiency of 8.42%. Furthermore, the Pc device maintained an initial efficiency of 97.5% after 700 h compared to the Spiro-OMeTAD-based device. These results demonstrate the great potential of the Pc hole transport layer and provide new insights into the selection of HTL materials for the preparation of highly efficient Sb2(S,Se)3 thin film solar cells. [ABSTRACT FROM AUTHOR]

Layered Au/SnS2 nanosheet based chemiresistive-type sensors were successfully prepared by using an in situ chemical reduction method followed by the hydrothermal treatment. SEM and XRD were used to study the microscopic morphology and crystal lattice structure of the synthesis of Au/SnS2 nanomaterials. TEM and XPS characterization were further carried out to verify the formation of the Schottky barrier between SnS2 nanosheets and Au nanoparticles. The as-fabricated Au/SnS2 nanosheet based sensor demonstrated excellent sensing properties to low-concentrations of NO2, and the response of the sensor to 4 ppm NO2 at 120 °C was approximately 3.94, which was 65% higher than that of the pristine SnS2 (2.39)-based sensor. Moreover, compared to that (220 s/520 s) of the pristine SnS2-based sensor, the response/recovery time of the Au/SnS2-based one was significantly improved, reducing to 42 s/127 s, respectively. The sensor presents a favorable long-term stability with a deviation in the response of less than 4% for 40 days, and a brilliant selectivity to several possible interferents such as NH3, acetone, toluene, benzene, methanol, ethanol, and formaldehyde. The Schottky barrier that formed at the interface between the SnS2 nanosheets and Au nanoparticles modulated the conducting channel of the nanocomposites. The "catalysis effect" and "spillover effect" of noble metals jointly improved the sensitivity of the sensor and effectively decreased the response/recovery time. [ABSTRACT FROM AUTHOR]