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Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum computation. Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states, which could greatly facilitate topological electronic research. However, ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers. In this study, we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal (TaSe4)2I. We find that the surface state of (TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction. With the combination of ferroelectric surface and charge-density-wave-gapped bulk states, an electric switchable barrier height can be achieved in (TaSe4)2I-metal contact. By employing a multi-terminal grounding design, we manage to construct a prototype ferroelectric memristor based on (TaSe4)2I with on/off ratio up to 10^3, endurance over 10^3 cycles, and good retention characteristics. The origin of the ferroelectric surface state is further investigated by first-principles calculations, which reveals an interplay between ferroelectricity and band topology. The emergence of ferroelectricity in (TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials, but also opens new routes towards the implementation of topological materials in functional electronic devices., Comment: 14 pages, 5 figures

Transport probes the motion of quasiparticles in response to external excitations. Apart from the well-known electric and thermoelectric transport, acoustoelectric transport induced by traveling acoustic waves has been rarely explored. Here, by adopting a hybrid nanodevices integrated with piezoelectric substrates, we establish a simple design of acoustoelectric transport with gate tunability. We fabricate dual-gated acoustoelectric devices based on BN-encapsuled graphene on LiNbO3. Longitudinal and transverse acoustoelectric voltages are generated by launching pulsed surface acoustic wave. The gate dependence of zero-field longitudinal acoustoelectric signal presents strikingly similar profiles as that of Hall resistivity, providing a valid approach for extracting carrier density without magnetic field. In magnetic fields, acoustoelectric quantum oscillations appear due to Landau quantization, which are more robust and pronounced than Shubnikov-de Haas oscillations. Our work demonstrates a feasible acoustoelectric setup with gate tunability, which can be extended to the broad scope of various Van der Waals materials., Comment: 16 pages, 5 figures

Light-to-electricity conversion is crucial for energy harvesting and photodetection, requesting efficient electron-hole pair separation to prevent recombination. Traditional junction-based mechanisms using built-in electric fields fail in non-barrier regions. Homogeneous material harvesting under photovoltaic effect is appealing but only realized in non-centrosymmetric systems via bulk photovoltaic effect. Here we report the realization of photovoltaic effect by employing surface acoustic waves (SAW) to generate zero-bias photocurrent in a conventional layered semiconductor MoSe2. SAW induces periodic modulation to electronic bands and drags the photoexcited pairs toward the travelling direction. The photocurrent is extracted by a local barrier. The separation of generation and extraction processes suppresses recombination and yields large nonlocal photoresponse. We distinguish acousto-electric drag and electron-hole pair separation effect by fabricating devices of different configurations. The acousto-drag photovoltaic effect, enabled by piezoelectric integration, offers an efficient light-to-electricity conversion method, independent of semiconductor crystal symmetry., Comment: 14 pages, 4 figures

EuCd2As2 was theoretically predicted to be a minimal model of Weyl semimetals with a single pair of Weyl points in the ferromagnet state. However, the heavily p-doped EuCd2As2 crystals in previous experiments prevent direct identification of the semimetal hypothesis. Here we present a comprehensive magneto-transport study of high-quality EuCd2As2 crystals with ultralow bulk carrier density (10^13 cm-3). In contrast to the general expectation of a Weyl semimetal phase, EuCd2As2 shows insulating behavior in both antiferromagnetic and ferromagnetic states as well as surface-dominated conduction from band bending. Moreover, the application of a dc bias current can dramatically modulate the resistance by over one order of magnitude, and induce a periodic resistance oscillation due to the geometric resonance. Such nonlinear transport results from the highly nonequilibrium state induced by electrical field near the band edge. Our results suggest an insulating phase in EuCd2As2 and put a strong constraint on the underlying mechanism of anomalous transport properties in this system., Comment: 13 pages, 4 figures

Neural Radiance Fields (NeRF) is a novel implicit 3D reconstruction method that shows immense potential and has been gaining increasing attention. It enables the reconstruction of 3D scenes solely from a set of photographs. However, its real-time rendering capability, especially for interactive real-time rendering of large-scale scenes, still has significant limitations. To address these challenges, in this paper, we propose a novel neural rendering system called UE4-NeRF, specifically designed for real-time rendering of large-scale scenes. We partitioned each large scene into different sub-NeRFs. In order to represent the partitioned independent scene, we initialize polygonal meshes by constructing multiple regular octahedra within the scene and the vertices of the polygonal faces are continuously optimized during the training process. Drawing inspiration from Level of Detail (LOD) techniques, we trained meshes of varying levels of detail for different observation levels. Our approach combines with the rasterization pipeline in Unreal Engine 4 (UE4), achieving real-time rendering of large-scale scenes at 4K resolution with a frame rate of up to 43 FPS. Rendering within UE4 also facilitates scene editing in subsequent stages. Furthermore, through experiments, we have demonstrated that our method achieves rendering quality comparable to state-of-the-art approaches. Project page: https://jamchaos.github.io/UE4-NeRF/., Comment: Accepted by NeurIPS2023