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Distinguishing from traditional working environments, we propose the harsh gamma radiation method to study the stability and reliability of the emerging two-dimensional (2D) quantum material tungsten diselenide (WSe2). Transmission electron microscopy studies showed clear chemical modulation with an atomically sharp interface, indicating that the selenium vacancy content increased with the irradiation dose. The WSe2 crystal could be transitioned into an n-doped semiconductor due to the anion vacancies created by radiation. Changes in the lattice vibrational modes induced by the passivation of oxygen was captured via Raman spectroscopy. The frequency shifts in both in-plane and out-of-plane modes are dependent linearly on the selenium vacancy content. The friction of WSe2 increases with the irradiation dose. Electrostatic properties were investigated by measuring the surface potential via Kelvin probe force microscopy. Due to different environments, molecular collisions lead to an increase in the concentration of vacancy defects, which made our results different from those previously reported. The first principles calculation suggests that an increase in the selenium vacancy population is generally accompanied by a transition from a direct gap material to an indirect one. This opens up a new venue to engineer the optical, frictional and electronic properties of transition metal dichalcogenides using irradiation.

Low-dimensional ferroelectricity and Dirac materials with protected band crossings are fascinating research subjects. Based on first-principles calculations, we predict the coexistence of spontaneous in-plane polarization and novel 2D emergent fermions in dynamically stable quadruple-layer (QL) XSbO$_2$ (X= Li, Na). Depending on the different polarization configurations, QL-XSbO$_2$ can exhibit unconventional inner-QL ferroelectricity and antiferroelectricity. Both ground states harbor robust ferroelectricity with enhanced spontaneous polarization of 0.56 nC/m and 0.39 nC/m for QL-LiSbO$_2$ and QL-NaSbO$_2$, respectively. Interestingly, the QL-LiSbO$_2$ possesses two other metastable ferroelectric (FE) phases, demonstrating the first 2D example with multiple FE orders. The ground FE phase can be flexibly driven into one of the two metastable FE phases and then into the antiferroelectric (AFE) phase. During this phase transition, several types of 2D fermions emerge, for instance, hourglass hybrid and type-II Weyl loops in the ground FE phase, type-II Weyl fermions in the metastable FE phase, and type-II Dirac fermions in the AFE phase. These 2D fermions are robust under spin-orbit coupling. Notably, two of these fermions, e.g., an hourglass hybrid or type-II Weyl loop, have not been observed before. Our findings identify QL-XSbO$_2$ as a unique platform for studying 2D ferroelectricity relating to 2D emergent fermions., 5 figures

Graphical abstract, The perovskite oxide interface has attracted extensive attention as a platform for achieving strong coupling between ferroelectricity and magnetism. In this work, robust control of magnetoelectric (ME) coupling in the BiFeO3/BaTiO3 (BFO/BTO) heterostructure (HS) was revealed by using the first-principles calculation. Switching of the ferroelectric polarization of BTO induce large ME effect with significant changes on the magnetic ordering and easy magnetization axis, making up for the weak ME coupling effect of single-phase multiferroic BFO. In addition, the Dzyaloshinskii-Moriya interaction (DMI) and the exchange coupling constants J for the BFO part of the HSs are simultaneously manipulated by the ferroelectric polarization, especially the DMI at the interface is significantly enhanced, which is three or four times larger than that of the individual BFO bulk. This work paves the way for designing new nanomagnetic devices based on the substantial interfacial ME effect.

We investigate the transport properties of bulk Ca2YZ (Y = Au, Hg; Z = As, Sb, Bi, Sn and Pb) by a combination method of first-principles and Boltzmann transport theory. The focus of this article is the systematic study of the thermoelectric properties under the effect of a spin–orbit coupling. The highest dimensionless figure of merit (ZT) of Ca2AuAs at optimum carrier concentration are 1.23 at 700 K. Interestingly enough, for n-type Ca2HgPb, the maximum ZT are close to each other from 500 K to 900 K and these values are close to 1, which suggests that semimetallic material can also be used as an excellent candidate for thermoelectric materials. From another viewpoint, at room temperature, the maximum PF for Ca2YZ are greater than 3 mW m−1 K−2, which is very close to that of ∼3 mW m−1 K−2 for Bi2Te3 and ∼4 mW m−1 K−2 for Fe2VAl. However, the room temperature theoretical κl of Ca2YZ is only about 0.85–1.6 W m−1 K−1, which is comparing to 1.4 W m−1 K−1 for Bi2Te3 and remarkably lower than 28 W m−1 K−1 for Fe2VAl at same temperature. So Ca2YZ should be a new type of promising thermoelectric material at room temperature.

Low-dimensional ferroelectricity and Dirac materials with protected band crossings are fascinating research subjects. Based on first-principles calculations, we predict the coexistence of spontaneous in-plane polarization and novel 2D emergent fermions in dynamically stable quadruple-layer (QL) XSbO

Perovskite oxide interfaces have become a platform for the realization of many unexpected physical properties in recent years, while effective electric control of magnetism is promising for future spintronic devices. In this work, external electric field is applied to control the physical properties of LaFeO3/SrTiO3 perovskite oxide heterostructures investigated by first-principles calculations based on density functional theory (DFT). We find that external electric field can effectively modulate the band dispersion around the Fermi level of both the n-type and the p-type interfaces. Negative electric field can weaken the band shift, even leading to a two-dimensional electron gas, which is accompanied by a reversible insulator-to-metal/half-metal transition at the n-type interface. Moreover, the n-type interface perfectly realizes a transformation from G-type antiferromagnetic to ferrimagnetic at −0.3 V/A. Meanwhile, the electric field also regulates the electronic structure of the p-type interface of the heterostructure. Our work mainly focus on using electric field to tune the interfacial electronic structure and magnetic properties of perovskite oxides heterostructures, and further pave the way to the experimental design of novel magnetoelectric interface materials.

Robust control of magnetism is both fundamentally and practically meaningful and highly desirable, although it remains a big challenge. In this work, perovskite oxide superstructures LaFeO3/BaTiO3 (LFO/BTO), LaMnO3/BaTiO3 (LMO/BTO) and LaCrO3/BaTiO3 (LCO/BTO) (001) are designed to facilitate tuning of magnetism by the electric field from ferroelectric polarization, and are systemically investigated via first-principles calculations. The results show that the magnetic ordering, conductivity and exchange interactions can be controlled simultaneously or individually by the reorientation of the ferroelectric polarization of BTO in these designed superstructures. Self-consistent calculations within the generalized gradient approximation plus on-site Coulomb correction did not produce distinct rotations of oxygen octahedra, but there were obvious changes in bond length between oxygen and the cations. These changes cause tilting of the oxygen octahedra and lead to spin, orbital and bond reconstruction at the interface, which is the structural basis responsible for the manipulation. With the G-type antiferromagnetic (G-AFM) ordering unchanged for both ±P cases, a metal–insulator transition can be observed in the LFO/BTO superstructure, which is controlled by the LFO thin film. The LMO/BTO system has A-type antiferromagnetic (A-AFM) ordering with metallic behavior in the +P case, while it shifts to a half-metallic ferromagnetic ordering when the direction of the polarization is switched. LCO/BTO exhibits C-type antiferromagnetic (C-AFM) and G-AFM orders in the +P and −P cases, respectively. The three purpose-designed superstructures with robust intrinsic magnetoelectric coupling are a particularly interesting model system that can provide guidance for the development of this field for future applications.

The scarcity of materials with coexisting ferroelectric polarization and magnetization has hindered the development of multiferroic-based spintronic applications. Therefore, the generation of polarization in magnetic compounds is an important task in an effort to make single-phase multiferroic materials. Magnetic domain walls with strong discontinuities in spin ordering provide an ideal platform for the generation of polarization. In this work, we investigate spin-induced ferroelectric polarization at antiferromagnetic domain walls in the rare-earth orthoferrites AFeO3 (A = Lu, Y, Gd). We find that the ferroelectric polarization depends on the atomic radius of the rare-earth element, with the largest polarization of 0.092 μC cm−2 being realized in LuFeO3, which has the smallest rare-earth radius and the highest domain wall density along the b direction. Based on the octahedral distortion and the unified polarization model, we also perform a mechanistic analysis of the ferroelectric polarization at domain walls along the b direction. The different octahedral tilt angles and the different unit cell volumes caused by A-site ions are the main reasons for the polarization difference in the three compounds. Our results improve the theoretical understanding of magnetically induced ferroelectric polarization at domain walls and provide a basis for experimental application in spintronic devices based on domain wall multiferroicity.

SrTiO3-based transition-metal oxide heterostructures with superconducting, ferromagnetic, ferroelectric, and ferroelastic properties exhibit high application potential in the fields of energy storage, energy conversion, and spintronic devices. Meanwhile, high effective (charge)-Seebeck coefficient materials composed of a ferromagnetic layer and SrTiO3 insulator layer have been achieved but we still have blocks to pursuing high spin-Seebeck coefficient materials. Here, we use first-principles calculations combined with spin-resolved Boltzmann transport theory to investigate the spin- and effective-Seebeck coefficients in the LaX(X = Mn and Co)O3/SrTiO3 superlattice. Compared with the LaMnO3/SrTiO3 superlattice, LaCoO3/SrTiO3 with ferromagnetic ordering has high spin polarization, relatively low valence valley degeneracy but high effective mass. Utilizing these characteristics, the maximum spin-Seebeck coefficient of LaMnO3/SrTiO3 is −152 μV K−1 at 450 K along the cross-plane direction, while LaCoO3/SrTiO3 reaches −247 μV K−1 under the same conditions. Interestingly, the spin- and effective-Seebeck coefficients are amazingly consistent with each other below 200 K, which indicates that one spin channel (spin-up or spin-down) dominates the carrier transport, and the other one (spin-down or spin-up) is filtered out. These characteristics are mainly associated with the magnetic MnO2/CoO2 layers with distinct dxy and dz2 orbitals near the Fermi level. Our results clarify the relationship of spin- and effective-Seebeck coefficients and indicate that SrTiO3-based transition metal oxide heterointerfaces are a key candidate for spin caloritronics.

The previous experimental work showed that n-type low-temperature (LT) SnSe doped with BiCl3 simultaneously exhibited larger Seebeck coefficient (S), higher electrical conductivity (σ), and lower thermal conductivity (κ) compared with polycrystalline LT SnSe. Here, the first-principles method was used to explore how the independent adjustment to the tangled thermoelectric (TE) transport coefficients of n-type LT SnSe was achieved and whether there exist the similar adjustment mechanisms in n-type high-temperature (HT) SnSe. Cl doping increases the electron-pockets and the total density of states (TDOS) near the Fermi level (EF). This results in a high σ and an obvious decrease in S. Whereas, Bi doping introduces two half-filled bands into the band gap. The two bands originate from the 6s “lone-pairs” of Bi atoms and the sigma bonds formed by Bi atoms and their nearest Se atoms. This contributes to maintaining a relative large S and a low κ, but this cannot effectively enhance σ. Fortunately, the coexistence of Cl ions and Bi ions can make Bi/Cl codoped LT (or HT) SnSe set a high σ and a relatively large S in one through independent controlling the electronic structures and charge distribution near the EF. Further, we predict that Bi/Cl co-doping is also an effective strategy to improve the TE performance of HT SnSe.

Perovskite oxide interfaces have been used recently as platforms for demonstrating rich physical properties that are not possessed by their bulk constituents. In this work, we will not only demonstrate rich physical properties at polar perovskite oxide interfaces, but also the tuning of such properties by switching the polarization in PbTiO3/tetragonal BiFeO3 (BFO) two-dimensional ferroelectric heterostructures (HSs). Our first-principles calculations reveal that both magnetism and conductivity can be induced by the discontinuity of the ferroelectric (FE) polarization and the valence states at the interface, and they can also be robustly manipulated by reversing polarization. These properties include the coupling between an interfacial two-dimensional electron gas and magnetism, a transition from half-metal to band insulator or Mott insulator, and the conversion from G-type antiferromagnetic order to local ferromagnetic (FM) ordering, and finally, to the local C-type antiferromagnetic order (C-AFM). Furthermore, by setting different terminations, we can artificially control the local FM ordering that occurs arbitrarily in any one of the polarization directions, and we can even control whether the local FM ordering appears at the interface or at the surface. This novel control can be applied in the fabrication of memory devices for information storage where bits can be written by an electric field (to switch ferroelectric polarization) while reading magnetically. Such a device will drastically reduce energy consumption.

The magneto-Seebeck effect has recently attracted considerable attention because of its novel fundamental physics and future potential application in spintronics. Herein, employing first-principles calculations and the spin-resolved Boltzmann transport theory, we have systematically investigated the electronic structures and spin-related transport properties of Co2FeAl/MgO/Co2FeAl multilayers with parallel (P) and anti-parallel (AP) magnetic alignment. Our results indicate that the sign of tunneling magneto-Seebeck (TMS) value with Co2/O termination is consistent with that of the measured experimental result although its value (-221%) at room temperature is smaller than the experimental one (-95%). The calculated spin-Seebeck coefficients of the Co2/O termination with P and AP states and the FeAl/O termination with the AP state are all larger than other typical Co2MnSi/MgO/Co2MnSi heterostructures. By analyzing the geometries, electronic structures, and magnetic behaviors of two different terminations (Co2/O and FeAl/O terminations), we find that the two terminations in the interface region form anti-bonding and bonding states, reconstructing the energy gap, changing the magnetic moment of O atoms, and improving the spin-polarization (-82%). This phenomenon can be ascribed to the charge transfer and hybridization between Co/Fe 3d and O 2p states, which also results in a bowknot orbital shape of Co atoms with Co2/O termination and an ankle shape of Co atoms with FeAl/O termination far away from the interface. Moreover, there are spin-splitting transmission gaps with the Co2/O-termination around the Fermi level, while the transmission gaps with the FeAl/O-termination are closed and thus show a typical metallic character. Our findings will guide the experimental design of magneto-Seebeck devices for future spintronic applications.

Magnetism in two-dimensional (2D) materials, that is, a 2D version of the magnetism of three-dimensional bulk materials, and the associated novel physics have recently been the focus of many spintronics researchers. Here we investigate the manipulation of 2D magnetism at the interfaces of ferromagnetic/ferroelectric hematene/BaTiO3(001) heterostructures (HSs) fabricated via a precisely chosen sequence. By introducing four types of interfaces of 2D hematene and three-dimensional BaTiO3 that induce different oxygen environments, the control of magnetism is directly demonstrated from first-principles. An obvious 2D electron gas originates from the Fe-3d and O-2p hybridization; the electron gas is sensitive to the interfacial atomic displacements. Robust control of both the direction and magnitude of the net magnetization has been realized for an Fe/TiO2 terminated bilayer HS. The electron occupancies of the dxy and dxz orbitals and changes to the Fe-O bond play a key role in determining the magnetism of our systems. Our work not only demonstrates the technique's potential for manipulating magnetism in 2D hematene, but also sheds light on the underlying mechanism and the fundamental properties of hematene HSs.

The interplay between topology and valley degree of freedom has attracted much interest because it can realize new phenomena and applications. Here, based on first-principles calculations, we demonstrate intrinsically valley-polarized quantum anomalous Hall effect in monolayer ferrovalley material: Janus VSiGeN4, of which the edge states are chiral-spin-valley locking. Besides, a small tensile or compressive strain can drive phase transition in the material from valley-polarized quantum anomalous Hall state to half-valley-metal state. With the increase of the strain, the material turns into ferrovalley semiconductor with valley anomalous Hall effect. The origin of phase transition is sequent band inversion of V d orbital at K valley. Moreover, we find that phase transition causes the sign reversal of Berry curvature and induces different polarized light absorption in different valley states. Our work provides an ideal material platform for practical applications and experimental exploration of the interplay between topology, spintronics, and valleytronics., Comment: 8 pages, 6 figures

Distinguishing from traditional working environments, we propose the harsh gamma radiation method to study the stability and reliability of the emerging two-dimensional (2D) quantum material tungsten diselenide (WSe

After

Atom-thick van der Waals heterostructures with nontrivial physical properties tunable via the magnetoelectric coupling effect are highly desirable for the future advance of multiferroic devices. In this work on LaCl/In2Se3 heterostructure consisting of a 2D ferromagnetic layer and a 2D ferroelectric layer, reversible switch of the easy axis and the Curie temperature of the magnetic LaCl layer has been enabled by switching of ferroelectric polarization in In2Se3. More importantly, magnetic skyrmions in the bimerons form have been discovered in the LaCl/In2Se3 heterostructure and can be driven by an electric current. The creation and annihilation of bimerons in LaCl magnetic nanodisks were achieved by polarization switching. It thus proves to be a feasible approach to achieve purely electric control of skyrmions in 2D van der Waals heterostructures. Such nonvolatile and tunable magnetic skyrmions are promising candidates for information carriers in future data storage and logic devices operated under small electrical currents., Electrical control of topological spin textures is a major goal of spintronics. Here, the authors combine LaCl, a ferromagnet, and In2Se3, a ferroelectric, to create a multiferroic heterostructure, where bimerons, a topological spin-texture, can be created and annihilated by ferroelectric switching.

The Heusler alloys CoFeRGa (R = Ti, V, Cr, Mn, Cu, and Nb) have similar chemical compositions, but exhibit remarkably distinct electronic structures, magnetism and transport properties. These structures cover an extensive range of spin gapless semiconductors, half-metals, semiconductors and metals with either ferromagnetic, ferrimagnetic, antiferromagnetic, or nonmagnetic states. The Heusler alloys have three types of structures, namely, type-I, type-II, and type-III. By means of first-principles calculation combined with the Boltzmann equation within the consideration of spin-freedom, we explore the transport feature of the most stable structure (type-I). In addition, we provide evidence that all the considered materials are mechanically and dynamically stable, possessing high strength and toughness to resist compression and tensile strain. Moreover, the distinct electronic (metallic, insulating, and half-metallic) properties and magnetic behaviors originate mainly from a cooperative electron transfer and electronic structures have been verified by our calculation. Finally, we found that the tunable electronic structure with varied atomic numbers has significant influence on the spin-Seebeck effect. Correspondingly, the calculated spin-Seebeck coefficient of CoFeCrGa is -60.29 μV K-1 at 300 K, which is larger than that of other quaternary Heusler compounds. Our results provide a band-engineering platform to design Heusler structures with different electronic behaviors in isomorphic compounds, which provide the way for accelerating the pre-screening of materials to advance and for using the quaternary Heusler compounds for potential applications in spin caloritronic devices.

We investigate the transport properties of bulk Ca

Designing two-dimensional (2D) materials with magnetic and topological properties has continuously attracted intense interest in fundamental science and potential applications. Here, on the basis of first-principles calculations, we predict the coexistence of antiferromagnetism and Dirac nodal loop (NL) in the monolayer MnB, where the band crossing points are very close to the Fermi Level. Remarkably, a moderate strain can induce an antiferromagnetic to ferromagnetic phase transition, driving the monolayer MnB to a ferromagnetic metal with Weyl NLs. Such a type of topological quantum phase transition has not been observed before. In addition, the symmetry-protected properties of the two types of NLs as well as the magnetic critical temperatures are investigated. The controllable magnetic and topological order in monolayer MnB offers a unique platform for exploring topological quantum phase transitions and realizing nanospintronic devices.

Two-dimensional (2D) ferromagnetic materials with high Curie temperatures (TC) and tunable physical properties are crucial to the development of nanoscale spintronics devices. Here, we investigate the newly synthesized iodinene using first-principles calculations. Our results show that doping carriers in monolayer and bilayer iodinene can easily introduce itinerant ferromagnetism due to a flatband structure near the Fermi level, and that the associated TC is higher than room temperature. Moreover, we find that a structural phase transition can be achieved through the application of moderate tensile strain for both monolayer and bilayer iodinene. The magnetic moment, Curie temperature, band structure, carrier effective mass, and optical absorption can be changed significantly through this phase transition, and the transition can also lead to a magnetic phase transition with an appropriate doping concentration. Our work provides a feasible approach for designing 2D magnetic materials with potential for application in microelectronics devices.

The lattice thermal conductivity ( κ L ) of the monolayers of partial group-VA elements and binary compounds are systemically investigated by the first-principles calculations and phonon Boltzmann transport equation (PBTE), including aW-antimonene, α-arsenene, black phosphorus, α-SbAs, α-SbP and α-AsP. The κ L values decrease with the increasing of atomic mass for these materials with similar geometry and valence structures. It is ascribed to phonon branches softening, low phonon group velocity, and large Grüneisen parameters. Due to the neutralization of phonon group velocity and phonon lifetime, κ L of binary compounds is between their corresponding elements. As the atomic radius and mass increase, the bond strength and the phonon group velocity decreases. Furthermore, the dimensionless parameter γ 2 / A , which comes from the Slack equation and only has the dependence of Grüneisen parameter, grows up with the atomic mass rising, which indicates that a larger anharmonicity is present in the heavier V-V monolayers. For SbAs and SbP compounds, the thermal conductivity anisotropy mainly results from the anisotropy of elastic coefficients along armchair and zigzag directions. Our results highlight the impact of atomic arrangement on the thermal conductivity of group VA binary compounds. This work paves a way to modulate the thermal conductivity of 2D VA elements by incorporation atoms with suitable mass and may guide to improve thermoelectrical performance via the alloying method.

SrTiO3-based transition-metal oxide heterostructures with superconducting, ferromagnetic, ferroelectric, and ferroelastic properties exhibit high application potential in the fields of energy storage, energy conversion, and spintronic devices. Meanwhile, high effective (charge)-Seebeck coefficient materials composed of a ferromagnetic layer and SrTiO3 insulator layer have been achieved but we still have blocks to pursuing high spin-Seebeck coefficient materials. Here, we use first-principles calculations combined with spin-resolved Boltzmann transport theory to investigate the spin- and effective-Seebeck coefficients in the LaX(X = Mn and Co)O3/SrTiO3 superlattice. Compared with the LaMnO3/SrTiO3 superlattice, LaCoO3/SrTiO3 with ferromagnetic ordering has high spin polarization, relatively low valence valley degeneracy but high effective mass. Utilizing these characteristics, the maximum spin-Seebeck coefficient of LaMnO3/SrTiO3 is -152 μV K-1 at 450 K along the cross-plane direction, while LaCoO3/SrTiO3 reaches -247 μV K-1 under the same conditions. Interestingly, the spin- and effective-Seebeck coefficients are amazingly consistent with each other below 200 K, which indicates that one spin channel (spin-up or spin-down) dominates the carrier transport, and the other one (spin-down or spin-up) is filtered out. These characteristics are mainly associated with the magnetic MnO2/CoO2 layers with distinct dxy and dz2 orbitals near the Fermi level. Our results clarify the relationship of spin- and effective-Seebeck coefficients and indicate that SrTiO3-based transition metal oxide heterointerfaces are a key candidate for spin caloritronics.

After γ-ray irradiation treatment, a monolayer tungsten diselenide could be transitioned into an n-doped semiconductor due to the anion vacancies created by the radiation. Transmission electron microscope studies showed clear chemical modulation with atomically sharp interface. Change in the lattice vibrational modes induced by passivation of oxygen is captured by Raman spectroscopy. The frequency shifts in both in-plane and out-of-plane modes are dependent linearly on the oxidation content. We observe a negative trion, which is a neutral exciton bound with an electron, in the photoluminescence spectra. The binding energy of this trion is estimated to be ∼90 meV, making it a tightly bound exciton. The first-principles calculation suggests that an increase in the anion vacancy population is generally accompanied by a transition from a direct gap material to an indirect one. This opens up a new venue to engineer the electronic properties of transition metal dichalcogenides by using irradiation.

The nanoscale characteristics of semiconducting transition metal dichalcogenides (TMDCs) are largely determined by their photonic, mechanical, magnetic, thermal, and electronic properties, which can be modulated by adjusting thickness and radiation treatments. In this paper, gamma-rays were applied to irradiate the materials with one to six layers, based on which a comparison was drawn of the frictional and electrical properties before and after irradiation. The changes on a few-layer WSe2 were investigated using Raman spectroscopy, photoluminescence spectroscopy, scanning electron microscopy, transmission electron microscopy, force friction microscopy, and Kelvin probe force microscopy. Under the context of irradiation, there was a phenomenon found different than previously reported. The friction force of WSe2 nano-flakes increased from monolayer to bilayer, decreased at tri-layer, and then increased on a continued basis with thickness. It is suggested that the gamma-ray irradiation treatment could be effective in improving frictional and electronic properties. The range of change to the surface contact potential difference (CPD) was narrowed, and the stability of the device surface potential was enhanced. The continuum mechanics theory was applied to explore the friction force variation between different thickness layers. Based on the puckering effect of tip-flake adhesion, the friction force was determined by bending stiffness. The thermal treatment of WSe2 nanoflakes had a significant impact on the CPD between the sample and the test tip. After thermal treatment, the surface potential increased from one to five layers with thickness. These phenomena were explained in detail. The research contributes to enriching nanotribology and electrical theory in addition to promoting the use of semiconducting TMDCs for nano-components’ design.

As one of desirable spin-gapless semiconductors, Heusler alloy CoFeCrGa is a potential candidate for semiconductor spintronic applications. However, the absence of explicit investigation on transport properties opens a great way for our theoretical research. In this study, we report on the spin-Seebeck coefficient of quaternary Heusler alloy CoFeCrGa and CoFeCrAl from ab initio density functional theory and Boltzmann transport calculations. Interestingly, CoFeCrGa is a spin-gapless semiconductor while CoFeCrAl acts as a half-metallic ferrimagnet. These two effects produce different spin-Seebeck coefficients of 6.76 μV/K and -0.57 μV/K at room temperature, respectively. By modulating chemical potential and temperature, the spin-Seebeck coefficient can be boosted to -11.7 μV/K under µ = -0.15 eV for CoFeCrGa, and -16.2 μV/K with µ = 0.13 eV for CoFeCrAl, both at 400 K. We demonstrate that the mechanism of the variation of the Seebeck coefficient depending upon the chemical potential and temperature is related to bond lengths, electronic structures, magnetic properties, and transmission. These characteristics of CoFeCrGa and CoFeCrAl offer perspectives for their spin-transport devices.

Ba 3 Al 2 As 4 exhibits an unusual anisotropic electrical conductivity, that is, the electrical conductivity along the chain is smaller than those along other two directions. The results is conflict with previous conclusion for Ca 5 M 2 Pn 6 . Earlier studies on Ca 5 M 2 Pn 6 showed that a higher electrical conductivity could be obtained along the chain. The band decomposed charge density is used to explain such unusual behavior. Our calculations indicate the existence of a conductive pathway near the Fermi level is responsible for the electrons transport. Further, the Ba–As bonding of Ba 3 Al 2 As 4 has some degree covalency which is novel for the Zintl compounds.

Robust control of magnetism in LaAO3/BaTiO3 (A = Fe, Mn, Cr) perovskite superstructures is realized. Not only magnetism switching but also a spin-polarized 2D electron gas is created by switching of the polarization. A powerful scheme to realize robust control of both magnetism and the 2D electron gas is demonstrated. This work highlights the direction of further development in the multiferroic field., Robust control of magnetism is both fundamentally and practically meaningful and highly desirable, although it remains a big challenge. In this work, perovskite oxide superstructures LaFeO3/BaTiO3 (LFO/BTO), LaMnO3/BaTiO3 (LMO/BTO) and LaCrO3/BaTiO3 (LCO/BTO) (001) are designed to facilitate tuning of magnetism by the electric field from ferroelectric polarization, and are systemically investigated via first-principles calculations. The results show that the magnetic ordering, conductivity and exchange interactions can be controlled simultaneously or individually by the reorientation of the ferroelectric polarization of BTO in these designed superstructures. Self-consistent calculations within the generalized gradient approximation plus on-site Coulomb correction did not produce distinct rotations of oxygen octahedra, but there were obvious changes in bond length between oxygen and the cations. These changes cause tilting of the oxygen octahedra and lead to spin, orbital and bond reconstruction at the interface, which is the structural basis responsible for the manipulation. With the G-type antiferromagnetic (G-AFM) ordering unchanged for both ±P cases, a metal–insulator transition can be observed in the LFO/BTO superstructure, which is controlled by the LFO thin film. The LMO/BTO system has A-type antiferromagnetic (A-AFM) ordering with metallic behavior in the +P case, while it shifts to a half-metallic ferromagnetic ordering when the direction of the polarization is switched. LCO/BTO exhibits C-type antiferromagnetic (C-AFM) and G-AFM orders in the +P and −P cases, respectively. The three purpose-designed superstructures with robust intrinsic magnetoelectric coupling are a particularly interesting model system that can provide guidance for the development of this field for future applications.

The highest thermoelectric figure of merit (ZT) value of 2.6 has been experimentally determined in p-type single crystalline SnSe. In this work, we propose possible method to further enhance the thermoelectric performance of SnSe by comparing different thermoelectric performances of p- and n-type SnSe using the first-principles method and the semiclassical Boltzmann theory. There are relatively stronger intra-layer interactions between Sn and Se atoms for the layered single crystalline SnSe. The Sn p and s electrons near the Fermi level are pushed away along the a-direction because of the anti-bonding interaction between Sn and Se atoms. The pushed away electrons would hinder holes transport in the a-direction. This leads to the lowest electrical conductivity and ZT value along the a-direction for the p-type single crystalline SnSe. For n-type SnSe, the Sn p and Se p electrons are primarily distributed along the a-direction near the Fermi level. This would lead to high electrical conductivity and large Seebeck coefficient simultaneously in the a-direction. Combined with its ultralow thermal conductivity in the a-direction, the ZT value (∼3.1 at 770 K by a rough estimation) of n-type SnSe along the a-direction is probably much higher than that of p-type one. The peak values of S 2 σ τ of the p-type SnSe correspond to different carrier concentrations along the a- and b-directions. This is one reason for the low experimental peak ZT value of 0.6 for the p-type polycrystalline SnSe at 750 K. For the n-type SnSe, the S 2 σ τ can attain their peak values almost at the same carrier concentration along the a-, b-, and c-directions. This suggests that the power factor value of n-type polycrystalline SnSe would be much higher than that of p-type one at 770 K.

We have investigated the structural, electronic, and magnetic properties of A-site-ordered double-perovskite-structured oxides, AA'3B4O12 (A = Na, Ca, and La) with Mn and V at A' and B sites, respectively, using first-principle calculations based on the density functional theory. Our calculation results show that the antiferromagnetic phase is the ground state for all the compounds. By changing the A-site ions from Na(+) to Ca(2+) and then to La(3+), the transfer of charge between Mn and O ions was changed from 1.56 to 1.55 and then to 1.50, and that between the V and O ions changed from 2.01 to 1.95 and then to 1.93, revealing the cause for the unusual site-selective doping effect. Mn 3d electrons dominate the magnetic moment and are localized, with an intense hybridization with O 2p orbitals, which indicates that the magnetic exchange interaction between Mn ions is mediated through O and that the super exchange mechanism will take effect. These materials have a large one-electron bandwidth W, and the ratio of the on-site Coulomb repulsion U to W is less than the critical value (U/W)c, which leads to metallic behavior of AMn3V4O12. This is further evidenced by the large number of free electrons contributed by V at the Fermi surface. These calculations, in combination with the reported experimental data, prove that these double perovskites belong to the rare antiferromagnetic metallic oxides.

Electronic band structure is vital in determination the performance of thermoelectric materials. What is the optimum electronic structure for the largest figure of merit? To answer the question, we studied the relationship between the thermoelectric properties and the electronic band structure under the assumption of isotropic elastic scattering, within the context of Chasmar-Stratton theory. The results show that whether the anisotropic band structure and the effective mass of the carrier are beneficial to improving the thermoelectric properties. The scattering mechanism and the shape of the Fermi surface play a decisive role. Regardless of scattering mechanism type, a larger valley degeneracy is always beneficial to thermoelectric materials.

The electronic structure and transport properties of A 5 M 2 Pn 6 (A = Ca, Sr, Ba; M = Ga, Al, In; Pn = As, Sb) are investigated by using the first-principles calculations and Boltzmann transport theory, respectively. The results show that the order of the width of these band gaps is Ca 5 Ga 2 As 6 (0.37 eV) > Ca 5 Al 2 Sb 6 (0.35 eV) > Ca 5 In 2 Sb 6 (0.32 eV) > Sr 5 In 2 Sb 6 (0.29 eV) > Ba 5 In 2 Sb 6 (0.27 eV) > Ca 5 Ga 2 Sb 6 (0.088 eV). For intrinsic A 5 M 2 Pn 6 , increasing the band gap is better for improving their thermoelectric properties. For doped A 5 M 2 Pn 6 , increasing the band gap is helpful to improve the high-temperature thermoelectric properties of A 5 M 2 Pn 6 . However, at 300 K, when the band gap is small enough, regardless of n -type or p -type doping, A 5 M 2 Pn 6 exhibits good thermoelectric properties. Our analysis shows that the band gaps can be roughly adjusted by changing the electronegativity difference between Pn and A, and subtly adjusted by changing the electronegativity difference between Pn and M atoms. So the electronegativity difference among the constituent element is a very important factor affecting the thermoelectric properties.

By introducing a suitable barrier, carrier filtering can yield a high Seebeck coefficient by filtering out electrons (or holes) with low energy. To understand carrier filtering in a PbTe/SrTe interface, the first-principles method and semiclassical Boltzmann theory are used to investigate electronic structures and Seebeck coefficients of PbTe/SrTe (110) and (100) interfaces. The PbTe/SrTe heterostructure is found to be a type-I interface that can form an energy barrier that filters low-energy carriers. Such carrier filtering induces a large in-plane Seebeck coefficient of ∼277 μV K−1 (T = 600 K) with a fixed carrier concentration of 1.6 × 1020 cm−3. This large in-plane Seebeck coefficient is attributed to the Te-p states and the strong asymmetry of the transmission. Additionally, the values of the Seebeck coefficient of p-type PbTe/SrTe (110) are larger than those of the n-type one, and the electronic properties of the PbTe/SrTe (100) interface are similar to those of the PbTe/SrTe (110) interface.

Based on ab initio electronic structure calculations and Boltzmann transport theory, the size dependence of thermoelectric properties of ZnO single-walled nanotubes (SWNTs) and nanowires was investigated. There is an optimal carrier concentration yielding the maximum value of ZT at room temperature. The optimal carrier concentration and the maximum value of ZT depend on the diameters and structure of ZnO. The maximum value of ZT for ZnO SWNTs are remarkably higher than that of ZnO nanowires. The 9.60 A ZnO SWNT possess the highest ZT value, 0.322, which is nearly 3-fold higher than that of the best experimental samples at room temperature.

Spin-dependent thermoelectric effects in Aharonov–Bohm (AB) interferometer with four Rashba quantum dots (QDs) coupled to external two one-dimensional semi-infinite metallic leads are investigated theoretically. The basic thermoelectric transport characteristics, like charge (spin) Seebeck coefficient, and the charge (spin) figure of merits, have been calculated in terms of Green's function formalism. It is found that a pure spin-up (spin-down) Seebeck coefficient can be generated by the coaction of the magnetic flux and the Rashba spin-orbit interaction (RSOI) at room temperature.

The high-pressure structures of molybdenum (Mo) at zero temperature have been extensively explored through the newly developed particle swarm optimization (PSO) algorithm on crystal structural prediction. All the experimental and earlier theoretical structures were successfully reproduced in certain pressure ranges, validating our methodology in application to Mo. A double-hexagonal close-packed (dhcp) structure found by Mikhaylushkin et al. (2008) [12] is confirmed by the present PSO calculations. The lattice parameters and physical properties of the dhcp phase were investigated based on first principles calculations. The phase transition occurs only from bcc phase to dhcp phase at 660 GPa and at zero temperature. The calculated acoustic velocities also indicate a transition from the bcc to dhcp phases for Mo. More intriguingly, the calculated density of states (DOS) shows that the dhcp structure remains metallic. The calculated electron density difference (EDD) reveals that its valence electrons are localized in the interstitial regions.