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SnS thin films were synthesized using the spray pyrolysis method and then annealed at 350, 400, and 450°C. According to the crystallographic analysis, the obtained SnS thin films crystallized in the polycrystalline orthorhombic system. The grains measured 47, 66, and 37 nm for the samples annealed at 350, 400, and 450°C, respectively. SEM and AFM images indicate that the samples’ surfaces were completely covered. Thus, the grains of SnS nanostructures have a granular-like shape and vary in size depending on the annealing temperatures. The transmittance measurement shows that annealing the sample at 400 °C extends and improves its absorption range to 600 nm. The resulting band gap energies were 1.60 eV, 1.30 eV, and 2.55 eV for annealing at 350 °C, 400 °C, and 450 °C, respectively. Hall Effect measurements reveal that annealing SnS films at 400 °C enhances their electrical properties. The values of carrier mobility, conductivity, and carrier concentration are 1.678 ×105 Cm2/Vs, 9.756 ×10-5 Ω-1 cm-1, and 3.168 ×1010Cm-3, respectively. Additionally, the photocurrent response validates that all samples annealed at 350, 400, and 450 °C have p-type conductivity, with values of 13, 28, and 2.5 µA/Cm2, respectively. The best conductivity, carrier mobility, and photocurrent values are obtained by annealing at 400 °C. Therefore, SnS thin films can be an interesting choice for absorber layer applications in photovoltaic systems. [ABSTRACT FROM AUTHOR]

In this study, an optical scheme based on the measurement of light intensity and a proper orientation of the Fresnel Rhomb is successfully developed for simultaneous determination of the phase retardation and fast axis of a wave plate. The theoretical analysis of the principle of measuring the reflection-induced retardance of the Fresnel Rhomb and the phase retardation of a wave plate is given taking Stokes–Mueller Formalism as a mathematical tool. In this method, the fast axis position of the wave plate need not be determined in advance. In addition, the measured result is free of the intensity fluctuation of light source. An application example is also demonstrated. The measured result of the example is verified with an experiment. Some of the merits of the method, such as, a simple optical set-up, high stability and high accuracy, low cost and easier operation, are presented, and the validity of the method is demonstrated. [ABSTRACT FROM PUBLISHER]

SnS nanostructures were prepared using the electrodeposition technique in aqueous solutions containing 0.1M of SnSO4 and Na2SO4. Three concentrations (0.05M, 0.10M, and 0.15M) of Na2SO4 were tested. The electrodeposition of SnS nanostructures on ITO substrates was investigated by cyclic voltammetry, chronoamperometry, SEM microscopy, and X-ray diffraction techniques. The concentration-dependent nucleation and growth mechanisms of electrodeposited SnS were analyzed using current transients. For the concentrations (0.05M and 0.10 M), the SnS films follow 3D growth in instantaneous nucleation mode. For a concentration of 0.15M, the SnS films start with progressive nucleation before switching to the instantaneous nucleation mode. The SnS nanostructures produced were found to be polycrystalline with an orthorhombic structure. XRD measurement shows that the preferred orientation of SnS nanostructures is in the (111) and (101) directions for the lower concentrations. SEM images reveal the 3D growth model of the samples, which is consistent with the electrochemical analysis. [ABSTRACT FROM AUTHOR]