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1. Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications

Author

Medjdoub, Farid, Shinohara, Keisuke, Thome, Fabian, Moon, Jeong-sun, Chumbes, Eduardo, Guidry, Matthew T., Mishra, Umesh, Zanoni, Enrico, Meneghini, Matteo, Meneghesso, Gaudenzio, Pomeroy, James W., Thingujam, Terirama, and Kuball, Martin

Abstract

Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G and 6G mobile networks, are of great interest to support high-data-rate communications (e.g., 10 Gb/s or higher) and backhaul communications with >50 Gb/s. Since the E band and beyond can also support multigigahertz bandwidths, there is also growing interest in phased-array implementations. With its inherent integration advantage, SiGe phased arrays were demonstrated at the W band [1], with the latest result of a >10-Gb/s data rate [2]. In the case of point-to-point wireless links, III–V technologies [e.g., a pseudomorphic high-electron mobility transistor (pHEMT)] have also been utilized in full-duplex W-band links with a peak data rate of 10 Gb/s [2].

Published
2024
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4. ICE 2.0: Restructuring and Growing an Instructional HPC Cluster

Author

Coulter, J. Eric, primary, Weiner, Michael D., additional, Jezghani, Aaron, additional, Guidry, Matthew, additional, Lara, Ruben, additional, Liu, Fang (Cherry), additional, Metts, Allan, additional, Rahaman, Ronald, additional, Suda, Kenneth, additional, Wan, Peter, additional, Willcox, Gregory, additional, Womack, Deirdre, additional, and Zhou, Dan (Ann), additional

Published
2023
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6. N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning.

Author

Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, and Mishra, Umesh K.

Subjects
MODULATION-doped field-effect transistors, DIELECTRICS, NITROGEN, GALLIUM nitride, WIDE gap semiconductors, METAL insulator semiconductors, DEEP brain stimulation
Abstract

The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectric. A favourable trade‐off between gate fringing capacitance and transconductance was established, resulting in an improved current gain cutoff frequency times gate length (ft·LG) figure of merit compared to standard Schottky‐gate and metal‐insulator‐semiconductor (MIS) HEMTs. The etched gate dielectric MISHEMT demonstrated a maximum ft·LG of 15.0 GHz·µm for an LG of 100 nm. [ABSTRACT FROM AUTHOR]

Published
2024
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7. Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz

Author

Akso, Emre, primary, Clymore, Christopher, additional, Liu, Wenjian, additional, Collins, Henry, additional, Romanczyk, Brian, additional, Li, Weiyi, additional, Hatui, Nirupam, additional, Wurm, Christian, additional, Keller, Stacia, additional, Guidry, Matthew, additional, and Mishra, Umesh K., additional

Published
2023
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9. First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz

Author

Akso, Emre, primary, Collins, Henry, additional, Clymore, Christopher, additional, Li, Weiyi, additional, Guidry, Matthew, additional, Romanczyk, Brian, additional, Wurm, Christian, additional, Liu, Wenjian, additional, Hatui, Nirupam, additional, Hamwey, Robert, additional, Shrestha, Pawana, additional, Keller, Stacia, additional, and Mishra, Umesh K., additional

Published
2023
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11. Inductive Source Degeneration in 40-nm GaN HEMTs for Operation Above 100 GHz

Author

Arias-Purdue, Andrea, Guidry, Matthew, Lam, Eythan, and Buckwalter, James F.

Abstract

Source degeneration and neutralization techniques are investigated at millimeter-wave (mm-Wave) in gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The role of thru-substrate vias for inductive source degeneration (ISD) is analyzed and modeled. A series of 40-nm GaN HEMTs with ISD are measured under small-signal, pulsed I–V and 94-GHz load pull. The ISD HEMTs demonstrate a 3-dB improvement in available gain at 83 GHz but also an unanticipated up to 75% increase in power density at 94 GHz with respect to the baseline devices. We discuss possible reasons for the performance enhancement. Device characterization to 200 GHz is presented.

Published
2024
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14. Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise

Author

Guidry, Matthew, primary, Shrestha, Pawana, additional, Liu, Wenjian, additional, Romanczyk, Brian, additional, Hatui, Nirupam, additional, Wurm, Christian, additional, Karnaty, Rohit, additional, Li, Haoran, additional, Ahmadi, Elaheh, additional, Keller, Stacia, additional, Buckwalter, James F., additional, and Mishra, Umesh K., additional

Published
2022
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23. A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT

Author

Shrestha, Pawana, primary, Guidry, Matthew, additional, Romanczyk, Brian, additional, Karnaty, Rohit R., additional, Hatui, Nirupam, additional, Wurm, Christian, additional, Krishna, Athith, additional, Pasayat, Shubhra S., additional, Keller, Stacia, additional, Buckwalter, James F., additional, and Mishra, Umesh K., additional

Published
2020
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24. High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

Author

Shrestha, Pawana, primary, Guidry, Matthew, additional, Romanczyk, Brian, additional, Hatui, Nirupam, additional, Wurm, Christian, additional, Krishna, Athith, additional, Pasayat, Shubhra S., additional, Karnaty, Rohit R., additional, Keller, Stacia, additional, Buckwalter, James F., additional, and Mishra, Umesh K., additional

Published
2020
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28. Virtual-Source Modeling of N-polar GaN MISHEMTS

Author

Karnaty, Rohit R., primary, Mishra, Umesh K., additional, Buckwalter, James F., additional, Guidry, Matthew, additional, Shrestha, Pawana, additional, Romanczyk, Brian, additional, Hatui, Nirupam, additional, Zheng, Xun, additional, Wurm, Christian, additional, Li, Haoran, additional, and Keller, Stacia, additional

Published
2019
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31. Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures.

Author

Bisi, Davide, Meneghesso, Gaudenzio, Mishra, Umesh K., Zanoni, Enrico, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Guidry, Matthew, De Santi, Carlo, and Meneghini, Matteo

Subjects
IMPACT ionization, THRESHOLD voltage, TEMPERATURE, ELECTRON impact ionization
Abstract

This paper reports on the hot-carrier effects and semi-on-state behavior of nitrogen-polar GaN MIS-HEMTs at cryogenic temperatures (from 300 K down to 100 K). In the semi-on-state $(\text {V}_{\text {G}} \approx -{2}\,\,\text {V})$ , holes are generated by impact ionization in the high field region at the drain-side of the gate-edge. At room temperature, holes overcome the SiN/AlGaN stack and are collected at the gate-terminal, resulting in measurable hole gate-current (~11 nA/mm). Conversely, at cryogenic temperatures, the top SiN/AlGaN stack confines the holes within the GaN channel, thus inducing a negative threshold voltage shift (−0.4 V) and a sharp increase in drain current (0.18 A/mm). This behavior, referred to as “kink,” is readily observable on the $\text {I}_{\text {D}} - \text {V}_{\text {D}}$ characteristics. We demonstrated that the kink is related to impact ionization and follows a non-monotonic behavior maximized in the semi-on-state. Our interpretation is supported by a quantitative analysis based on the latest experimental impact-ionization coefficients available in the literature. [ABSTRACT FROM AUTHOR]

Published
2020
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38. Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN.

Author

Sayed, Islam, Liu, Wenjian, Chan, Silvia, Gupta, Chirag, Guidry, Matthew, Li, Haoran, Keller, Stacia, and Mishra, Umesh

Subjects
METAL organic chemical vapor deposition, METAL insulator semiconductors, MODULATION-doped field-effect transistors
Abstract

The electrical properties and trapping characteristics of Si3N4 and SiO2 dielectrics grown in situ on (000-1) N-polar GaN by metal organic chemical vapor deposition are investigated in this paper. The fixed charges, densities of near-interface trap states, and interface trap density in N-polar Si3N4 and SiO2 metal insulator semiconductor capacitors (MISCAPs) are quantified using a capacitance-voltage measurement method which is assisted by ultraviolet illumination and applied voltage-stress. The fixed charges and trap states are located at or near the interface of Si3N4 (SiO2)/N-polar GaN as indicated by the linear relationship between the flatband voltage/hysteresis and the Si3N4 (SiO2) thickness. Positive flatband voltages were measured for both the N-polar Si3N4 and SiO2 MISCAPs which is a promising route toward realizing normally off GaN-based metal insulator semiconductor power devices. Net negative fixed charge densities of 2.9 × 1012 cm−2 and 3.3 × 1012 cm−2 are located at the interface of Si3N4/GaN (N-polar) and SiO2/GaN (N-polar), respectively. The origin of this net negative interface fixed charge is briefly discussed, and the trap densities with fast and slow emission rates are quantified in both the N-polar Si3N4 and SiO2 MISCAPs. This study is a step toward identifying suitable gate dielectrics that can be integrated into N-polar high electron mobility transistors for high-frequency and switching applications. [ABSTRACT FROM AUTHOR]

Published
2019
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39. Youth fitness for the '90s

Author

Guidry, Matthew

Subjects
Physical education for children -- Management, Children -- Health aspects
Published
1991

41. N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz

Author

Wienecke, Steven, primary, Romanczyk, Brian, additional, Guidry, Matthew, additional, Li, Haoran, additional, Ahmadi, Elaheh, additional, Zheng, Xun, additional, Hestroffer, Karine, additional, Keller, Stacia, additional, and Mishra, Umesh K., additional

Published
2016
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45. N-Polar Deep Recess MISHEMTs with Record 2.9 W/mm at 94 GHz

Author

Wienecke, Steven, primary, Romanczyk, Brian, additional, Guidry, Matthew, additional, Li, Haoran, additional, Zheng, Xun, additional, Ahmadi, Elaheh, additional, Hestroffer, Karine, additional, Megalini, Ludovico, additional, Keller, Stacia, additional, and Mishra, Umesh K., additional

Published
2016
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47. Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High fmax\cdot VDS,Q.

Author

Zheng, Xun, Li, Haoran, Guidry, Matthew, Romanczyk, Brian, Ahmadi, Elaheh, Hestroffer, Karine, Wienecke, Steven, Keller, Stacia, and Mishra, Umesh K.

Subjects
MODULATION-doped field-effect transistors, PASSIVATION, HIGH voltages
Abstract

This letter presents an analysis of N-polar metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a 40 nm MOCVD SiNx passivation and a trench-gate design. A device with a 50 nm gate-length (Lg) demonstrates a 313 GHz power gain cutoff frequency (fmax) at a quiescent drain bias (V $_{{DS,Q}} ) of 26 V. The high fmax\cdot VDS,Q of 8.1 THz \cdot V exhibits great potential of the device in high-frequency power applications. Investigation on small-signal parameters shows that fmax improves with V $_{{DS,Q}}$ due to a reduction of gate-drain capacitance (cgd) and an increase of output resistance (rds). When comparing with the previously reported planar HEMT design, the shorter Lg enabled by the trench-gate design enhances the intrinsic current gain cutoff frequency (f $_{{T,int}}$ ) leading to a higher peak fmax at a higher V $_{{DS,Q}}$ . [ABSTRACT FROM PUBLISHER]

Published
2018
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