Search

In this paper, we propose a multi-attribute group decision-making (MAGDM) method based on Dempster–Shafer Evidence Theory (DST) and linguistic intuitionistic fuzzy numbers (LIFNs), in which both the expert weights and attribute weights are unknown. Firstly, we represent LIFNs as basic probability assignments (BPAs) by DST based on linguistic scale function (LSF), and a linear programming model is proposed to combine the objective weights and subjective weights of attributes to obtain the combined weights. At the same time, the experts’ weights are obtained through Jousselme distance. Secondly, we use the weights to correct the evidence, and the comprehensive evaluation value of each alternative is calculated by the combination rule of evidence. Further, a new MAGDM approach with DST and LIFNs is presented. Finally, we give an example to explain the proposed method and compare it with other methods to show the feasibility and superiority.

Due to excellent properties such as high hardness, high temperature resistance, corrosion resistance and low thermal conductivity, siliconnitrideceramicsare widely used in aerospace, moldand semiconductor fields. This paper studied the material removal characteristics of fixedpoint laser ablation and microgrooving of silicon nitride ceramics in the cross-coupling energy domain after laser beam splitting and combining. When using nanosecond laser for fixed point ablation, the effect of defocus on the surface characteristics of laser ablation was analyzed. When processing surface microgrooves in different directions, the influence of the directional effect of the spatial characteristics of the coupled energy domain on the processing quality was studied. By test and analysis of the surface morphology characteristics of silicon nitride ceramics, the results show thatthe change of the defocus affects the processing depthwhen a fixed point is ablatedin the cross-coupling energy domain. Thedirection effect of microgroove processing has a more significant effect on the surface characteristics.

The characteristics of a laterally diffused metal oxide semiconductor (LDMOS) with different layout structures is investigated based on 14nm FinFET technology. The layout dependences of the breakdown voltage (BVDS), linear drain current (Idlin), on state resistance (Ron), drain cut-off current (Idoff), and Idlin degradation were studied to optimize FinFET performance with improved device structure. The overlap between N-drift region and metal gate (Lw) has a crucial impact on the breakdown voltage, Idlin, and Ron. The BVDS is 4% lower, and Ron reduced about 15% for 1x channel length device at Lw=1.8x than Lw=1x. Idoff is increased with the increase of Lw. The BVDS, Idoff, and Idlin degradation caused by hot carrier injection (HCI) are also investigated by the different overlap length of P-type well and N-drift region (Lo). With increase of Lo, the BVDS is increased and Ioff is decreased. The Idlin degradation is reduced 1.8 times by the optimization of Lo.

As CMOS scaling extends into the Nano scale tech-node, designers need to not only pay attention to the device behavior impact by traditional geometric parameters, such as channel length and width; but also need to be aware on layout implementation details of the device and its surrounding neighborhood. Static Random Access Memories (SRAM) 6T cell is a basic circuit constitute by six single device, including two PMOS and four NMOS. Large SRAM arrays are widely used as cache memory in electric industries and can be applied to monitor process quality and stability in manufacture process. The device performance of single device in SRAM 6T cell determined whether a SRAM cell can function, and seriously influenced the read/write margin of it. As the single device in SRAM 6T cell up against complicated layout surroundings, their performance is largely independent of the neighborhood environment. In this paper, we will focus on three types of local layout effect to SRAM single device, including NW size effect, metal boundary effect and gate extension AA size effect. The change mode of device in SRAM circuit is analyzed and mechanisms is investigated to explain them.

An interface trapping model of shadow trench isolation (STI)/fin boundary for a laterally diffused metal oxide semiconductor (LDMOS) is proposed, and trapping effects on on-resistance (Ron) is comprehensively studied in 14-nm FinFET technology. In this paper, the dependencies of thermal treatment splits after STI deposition on Ron are also investigated. It is shown that Ron is reduced 80% for p-type LDMOS, and increased 20% for n-type LDMOS with increase of thermal treatment temperature, which indicts thermal treatment process of STI has a contrary effect on Ron variation. The different well doping conditions of drift region are also investigated to further understand the trapping model of STI/fin. Three groups of devices including high, median, and low dose/energy are designed to verify the interface trapping model of STI/fin boundary. With increase of implanting concentration and energy, there are 70% and 10% Ron reduction for both p-type and n-type LDMOS respectively. It implies that high dose and energy are conductive to improve Ron of Fin-LDMOS in 14-nm FinFET technology. The presented TCAD simulation results are consistent with our experimental results.

LDMOS (Laterally Diffused Metal Oxide Semiconductor) applications get extensively in high voltage and smart power management. However, high operational drain voltage makes LDMOS devices highly vulnerable to the damage caused by HCI (hot-carrier injection). In this paper, shallow trench isolation (STI) based LDMOS linear drain current (Idlin) degradation induced by HCI (hot carrier injection) was systematically studied with the various layout parameters of NLDMOS (n-channel LDMOS) and well implant condition using 28nm Poly/SiON logic process, extensive TCAD (Technology Computer Aided Design) simulations and experiments revealed that layout, OPC (optical proximity correction), well implant optimization can greatly improve NLDMOS linear drain current degradation induced by HCI. The physical mechanism behinds the results should be that the impact ionization region has been driven further away from the STI edge and Si/SiO2 interface with a reduction in magnitude, which can reduce Idlin shift induced by HCI stress and make sure NLDMOS HCI pass industry general criteria of Idlin shift.

LDMOS (Laterally Diffused Metal Oxide Semiconductor) applications get extensively in high voltage and smart power management. In this paper, various LDMOS layout design was studied to get high fT (Cut off frequency) and high breakdown voltage by TCAD simulation based on 28nm HKMG logic process, TCAD simulations reveal that layout and implant optimization can get fT (Cut off frequency) > 50GHz with BV ds (breakdown voltage) > 5V performance on 1.8 V IO NLDMOS.

The use of strained SiGe is essential to improve PFET MOS device performance. However, the structure is susceptible to strain relaxation and wafer deformation during thermal annealing. The accumulation of stress in the wafer needs to be controlled to minimize contact misalignment overlay issue. This paper analyzes laser spike annealing impact and SiGe dummy pattern layout impact on contact overlay by experiments on 28n m technology, design guide lines on shape of dummy SiGe patterns for slip free condition have been investigated and clarified. With optimized dummy SiGe patterns and laser spike annealing, random component of contact misalignment has been successfully reduced to normal level.

A fiber-optic acetylene gas sensor based on a microstructured optical fiber Bragg grating (MOFBG) is presented. The microstructured optical fiber (MOF) is specially designed to have a photosensitive core and holey cladding for grating fabrication and gas detection. The micro-holes of the MOF serve as gas cells, in which the acetylene molecules interact with light through the evanescent-waves of guided modes. The MOFBG with a specific period is utilized to not only make the sensor work in reflection mode, but also selectively determine the wavelength and the order of the acting fiber mode for gas sensing. The MOF is prepared by using the well-known stack-and-draw method, and the Bragg gratings are fabricated by using 193-nm laser pulses. Experiments for the use of the MOFBG for acetylene gas detection have been successfully demonstrated.

The fabrication and characterization of a highly sensitive DNA biosensor based on thin-core fiber modal interferometer (TCFMI) are presented. The TCFMI is made by using a thin-core fiber (TCF) with core diameter of ~3.0 μm and etched by using Hydrofluoric (HF) acid solution for sensitivity enhancement. A thin layer of polymer (PLL, poly-L-lysine) was coated on the sensor surface and experimentally demonstrated for the detection of hybridization of deoxyribonucleic acid (DNA).

Aiming at drawbacks existed in means of the traditional ID authentication and the authority control in the fire protection monitoring system, this paper proposes solutions for the ID authentication in the monitoring system based on the Fingerprint Identification Technology, describes the working principle of the fingerprint identification in the fire protection monitoring system, introduces the methods of the fingerprint identification, the realization modes of the ID authentication, and the design ideas of the program, and analyzes the applications of the fingerprint identification technology in the fire protection monitoring system, providing a new way of thinking for the safe operation of the fire protection monitoring system.

A cladding-etched thin-core fiber modal interferometer is proposed and theoretically investigated. Numerical simulations of the light propagation performance are carried out. The results render this structure as an unltrasensitive refractive index sensor.