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The Kondo lattice physics, describing the hybridization of localized spin matrix with dispersive conduction electrons, breeds numerous discoveries in the realm of strongly correlated quantum matter. Generally observed in lanthanide and actinide compounds, increasing attention has been directed towards alternative pathways for achieving flat band structures, such as Morie superlattices and Kagome metals. However, fine control of Kondo interaction outside of heterostructures remains elusive. Here we report the discovery of a van der Waals (vdW) kagome antiferromagnet CsCr6Sb6. Angle-resolved photoemission spectra and theoretical analysis show clear flat bands, consisting of half-filled 3dxz and 3dyz orbitals of Cr, situated 50 meV below the Fermi level. Importantly, we observe the emergence of anomalous Hall effect with remarkable tunability by simple reduction the sample thickness. The effective control of kondo interaction in CsCr6Sb6 render it an ideal platform for exploring unpresented phenomena using the vast toolkit of vdW structures.

The pursuit of discovering new high-temperature superconductors that diverge from the copper-based paradigm carries profound implications for elucidating mechanisms behind superconductivity and may also enable new applications. Here, our investigation reveals that application of pressure effectively suppresses the spin and charge order in trilayer nickelate La$_4$Ni$_3$O$_{10}$ single crystals, leading to the emergence of superconductivity with a maximum critical temperature (Tc) of around 30 K. In the normal state, we observe a "strange metal" behavior, characterized by a linear temperature-dependent resistance extending up to 300 K. These results could be interpreted as the pressure's influence, inducing damping on the density-wave gap and spin order, while promoting spin fluctuations and bringing the associated flat dz2 band into close proximity with the Fermi surface. This, in turn, fosters strong correlations and "strange metal" behavior, thus setting the stage for the eventual emergence of superconductivity. Furthermore, the layer-dependent superconductivity observed hints at a unique interlayer coupling mechanism specific to nickelates, setting them apart from cuprates in this regard. Our findings provide crucial insights into the fundamental mechanisms underpinning superconductivity, while also introducing a new material platform to explore the intricate interplay between the spin/charge order, flat band structures, interlayer coupling, strange metal behavior and high-temperature superconductivity., Comment: Updated: Zero Resistance, Meissner Effect, and Detailed Structural Property Measurements

Excitons, which represent a type of quasi-particles consisting of electron-hole pairs bound by the mutual Coulomb interaction, were often observed in lowly-doped semiconductors or insulators. However, realizing excitons in the semiconductors or insulators with high charge carrier densities is a challenging task. Here, we perform infrared spectroscopy, electrical transport, ab initio calculation, and angle-resolved-photoemission spectroscopy studies of a van der Waals degenerate-semiconductor Bi4O4SeCl2. A peak-like feature (i.e., alpha peak) is present around ~ 125 meV in the optical conductivity spectra at low temperature T = 8 K and room temperature. After being excluded from the optical excitations of free carriers, interband transitions, localized states and polarons, the alpha peak is assigned as the exciton absorption. Moreover, assuming the existence of weakly-bound excitons--Wannier-type excitons in this material violates the Lyddane-Sachs-Teller relation. Besides, the exciton binding energy of ~ 375 meV, which is about an order of magnitude larger than those of conventional semiconductors, and the charge-carrier concentration of ~ 1.25 * 10^19 cm^-3, which is higher than the Mott density, further indicate that the excitons in this highly-doped system should be tightly bound. Our results pave the way for developing the optoelectronic devices based on the tightly-bound and room-temperature-stable excitons in highly-doped van der Waals degenerate semiconductors., Comment: Accepted by Communications Materials

Silicon carbide (SiC) is an important semiconductor material for fabricating power electronic devices that exhibit higher switch frequency, lower energy loss and substantial reduction both in size and weight in comparison with its Si-based counterparts1-4. Currently, most devices, such as metal-oxide-semiconductor field effect transistors, which are core devices used in electric vehicles, photovoltaic industry and other applications, are fabricated on a hexagonal polytype 4H-SiC because of its commercial availability5. Cubic silicon carbide (3C-SiC), the only cubic polytype, has a moderate band gap of 2.36 eV at room-temperature, but a superior mobility and thermal conduction than 4H-SiC4,6-11. Moreover, the much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices7-10,12-14. The growth of 3C-SiC crystals, however, has remained a challenge up to now despite of decades-long efforts by researchers because of its easy transformation into other polytypes during growth15-19, limiting the 3C-SiC based devices. Here, we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique(TSSG), beyond what's expected by classic nucleation theory. This enables the steady growth of quality and large sized 3C-SiC crystals (2~4-inch in diameter and 4.0~10.0 mm in thickness) sustainable. Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC., Comment: 17 pages, 4 figures

The recent report of near-ambient superconductivity in nitrogen doped lutetium hydride has triggered a worldwide fanaticism and raised major questions about the latest claims. An intriguing phenomenon of color changes in pressurized samples from blue to pink to red was observed and correlated with the claimed superconducting transition, but the origin and underlying physics of these color changes have yet to be elucidated. Here we report synthesis and characterization of high-purity nitrogen doped lutetium hydride LuH$_{2\pm\text{x}}$N$_y$ with the same structure and composition as in the main phase of near-ambient superconductor1. We find a new purple phase of LuH$_{2\pm\text{x}}$N$_y$ between blue and pink phase, and reveal that the sample color changes likely stem from pressure-driven redistribution of nitrogen and its interaction with the LuH$_2$ framework. No superconducting transition is found in all blue, purple, pink and red phases at temperatures 1.8-300 K and pressures 0-30 GPa. Instead, we identify a notable temperature-induced resistance anomaly of structural and/or electronic origin in LuH$_{2\pm\text{x}}$N$_y$, which is most pronounced in the pink phase and may have been erroneously interpreted as a sign of superconducting transition. This work establishes key benchmarks for nitrogen doped lutetium hydrides, allowing an in-depth understanding of the novel pressure-induced phase changes., Comment: 17 pages and 5 figures in the main text. 9 pages and 12 figures in the Supplementary Material. Any valuable comments and suggestions are warmly welcomed

Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6Sn2As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px+py orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconductors., Comment: 6 pages,4 figures, Accepted by Angew. Chem. Int. Ed

Previous investigations of 4$H_b$-TaS$_{2-2x}$Se$_{2x}$ mainly focused on the direct competition between superconductivity and charge density wave (CDW). However, the superconductivity itself, although has been prominently enhanced by isovalent Se substitution, has not been adequately investigated. Here, we performed a detailed electrical transport measurement down to 0.1 K on a series of 4$H_b$-TaS$_{2-2x}$Se$_{2x}$ single crystals. A systematic fitting of the temperature-dependent resistance demonstrates that the decreased Debye temperatures ($\Theta_{D}$) and higher electron-phonon coupling constants ($\lambda_{e-p}$) at the optimal Se doping content raise the superconducting transition temperature ($T_c$). Additionally, we discovered that the incorporation of Se diminishes the degree of anisotropy of the superconductivity in the highly layered structure. More prominently, a comprehensive analysis of the vortex liquid phase region reveals that the optimally doped sample deviates from the canonical 2D Tinkham prediction but favors a linear trend with the variation of the external magnetic field. These findings emphasize the importance of interlayer interaction in this segregated superconducting-Mott-insulating system., Comment: 11 pages, 5 figures

Here, we have grown single crystals of LaTe2-xSbx (x=0 and 0.4) with continuously adjustable CDW. High-pressure x-ray diffraction show LaTe2 does not undergo phase transition and keep robust below 40 GPa. In-situ high-pressure electrical measurements show LaTe2-xSbx undergo semiconductor-metal-superconductivity transition at 4.6 and 2.5 GPa, respectively. With the doping of Sb, the highest Tc increases from 4.6 to 6.5 K. Theoretical calculations reveal that the CDW has been completely suppressed and the calculated Tc is about 2.97 K at 4.5 GPa, consistent with the measured value. Then, the pressure-induced superconductivity in LaTe2-xSbx can be explained in the framework of the BCS theory., Comment: 11 pages, 5 figures

MPX3 (M=metals, X=S or Se) represents a large family of van der Waals (vdW) materials featuring with P-P dimers of ~2.3 {\AA} separation. Its electrical transport property and structure can hardly be tuned by the intentional chemical doping and ionic intercalation. Here, we employ an entropy-enhancement strategy to successfully obtain a series of medium-entropy compounds MEPSe3 (ME=Fe, Mn, Cd and In), in which the electrical and magnetic properties changed simultaneously. Lone-pair electrons of P emerge due to the dissociation of the dimers as evidenced by a 35% elongation in the P-P interatomic distance. The band gap widens from 0.1 eV to 0.7 eV by this dissociation. Under external physical pressure up to ~50 GPa, a giant collapse of up to 15% in the c-axis happens, which is in contrast to the in-plane shrinkage of their counterparts Fe/MnPSe3. It leads to the recombination of P3- with lone pair electrons into a P-P dimer and the smallest bulk modulus of 28 GPa in MPX3. The MEPSe3 transits from a spin-glass insulator to metal, and to superconductor, which is rarely observed in the MPX3. Our findings highlight the P-P dimer as an indicator to probe diverse electronic structure and the effectiveness of entropy-enhancement in materials science., Comment: 10 pages, 4 figures

Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with both silicon and perovskite oxides, exhibiting an enormous potential to bridging those two materials classes for multifunctionalities. Here we report the formation of 2DEG at the interface between the rock-salt BaO and SrTiO3. The highest electron mobility reaches 69000 cm^2 V.S^-1 at 2 K, leading to the typical Shubniko de Haas (SdH) oscillations under the high magnetic fields. The presence of SdH oscillations at different field-angles reveals a quasi-two-dimensional character of the Fermi surface. The first-principles calculations suggest that the effective charge transfer from the BaO to Ti 3dxy orbital at the interfaces is responsible to the observed high carrier mobility. Our results demonstrate that the BaO/STO heterointerface is a platform for exploring the correlated quantum phases, opening a door to the low-power and mesoscopic electronic devices., Comment: 18 pages; 5 figures

We report the structure and physical properties of two newly-discovered compounds AV8Sb12 and AV6Sb6 (A = Cs, Rb), which have C2 (space group: Cmmm) and C3 (space group: R-3m) symmetry, respectively. The basic V-kagome unit is present in both compounds, but stacking differently. A V2Sb2 layer is sandwiched between two V3Sb5 layers in AV8Sb12, altering the V-kagome lattice and lowering the symmetry of kagome layer from hexagonal to orthorhombic. In AV6Sb6, the building block is a more complex slab made up of two half-V3Sb5 layers that are intercalated by Cs cations along the c-axis. Transport property measurements demonstrate that both compounds are nonmagnetic metals, with carrier concentrations at around 1021cm-3. No superconductivity has been observed in CsV8Sb12 above 0.3 K under in-situ pressure up to 46 GPa. In contrast to CsV3Sb5, theoretical calculations and angle-resolved photoemission spectroscopy (ARPES) reveal a quasi-two-dimensional electronic structure in CsV8Sb12 with C2 symmetry and no van Hove singularities near the Fermi level. Our findings will stimulate more research into V-based kagome quantum materials., Comment: 11 pages 6 figures

Superatomic crystal is a class of hierarchical materials composed of atomically precise clusters assembled via van der Waals or covalent-like interactions. AuTe$_2$Se$_{4/3}$, an all-inorganic superatomic superconductor exhibiting superatomic-charge-density-wave (S-CDW), provides a first platform to study the response of their collectively quantum phenomenon to the external pressure in superatomic crystals. We reveal a competition between S-CDW and superconductivity using cutting-edge measurements on thin flakes at low pressures. Prominently, the pressure modulation of S-CDW ordering is 1$\sim$2 order of magnitudes (0.1 GPa) lower than that of conventional atomic superconductors. As pressure increases to 2.5 GPa, the $T_{\mathrm{CDW}}$ is suppressed and the superconducting transition temperature ($T_{\mathrm{c}}$) is firstly enhanced, and reaches the maximum then quenches with increasing pressure. Above 7.3 GPa, a second superconducting phase emerges, and then a three-fold enhancement in the transition temperature ($T_{\mathrm{c}}$) happens. Analyses of the crystal structure and theoretical calculations suggest a pressure-mediated switch of the conduction channel from the $a$- to the $b$-axis occur, followed by a dimensional crossover of conductivity and the Fermi surface from 2D to 3D., Comment: 6 pages, 4 figures

The interplay among various collective electronic states such as superconductivity (SC) and charge density wave (CDW) is of tremendous significance in low-dimensional transition metal dichalcogenides. Thus far, a consensus on the relationship between SC and CDW has not been established in IrTe2, where either competing or collaboration pictures have been suggested in the bulk or thick flakes. Here, we use the state-of-art Au-assisted exfoliation method to overcome the obstacle of interlayer Te-Te bonding, cleaving the IrTe2 down to monolayer for the first time. A striking feature revealed by angle-resolved polarized Raman spectroscopy (ARPRS) and electrical transport measurements is the concurrence of phase separation in one single piece of nano-flake, i.e. the superconducting (P-3m1) and CDW (P-3) area. In the pure SC area, the dimensional fluctuations completely suppress the CDW ordering and induce SC at 3.5 K. Meanwhile, the pure CDW area with much enhanced TCDW at 605 K (compared to TCDW = 280 K in bulk) is always accompanied by a unique wrinkle pattern. Detailed analyses suggest the local strain-induced bond breaking of the Te-Te dimer facilitates the emergence of the CDW order. Our works provide compelling evidence of competition between SC and CDW, highlighting the importance of microstructure in determining the ground states of IrTe2., Comment: 10 pages, 4 figures

For anisotropic magneto-resistance (AMR) effect, its value synergistically depends on the magnitudes of magneto-resistance (MR) and magneto-crystalline anisotropy energy (MAE) simultaneously. In a magnetic material, the concurrence of gigantic AMR and MR signals is rather difficult due to weak spin-lattice coupling and small MAE. Here we report the considerable magneto-transport effect in layered A-type antiferromagnetic (AFM) NaCrTe2 by realigning the spin configurations. By applying H, the antiparallel spins of adjacent layers are flipped to ferromagnetic (FM) coupling either Ising-type along c-axis or XY-type within ab-plane. Theoretical calculations reveal that the energy bandgap narrows from 0.39 eV to 0.11 eV, accompanying a transition from semiconductor (high-R state) and half-semiconductor (low-R state), respectively. Thus, gigantic negative MR ratio of -90% is obtained at 10 K. More importantly, the decrement of R along H//c is far quicker than that of H//ab because the MAE of Ising-FM state is 1017 {\mu}eV/Cr3+ lower than that of XY-FM. The distinct trends result in the AMR ratio of 732% at 10 K, which is the record value to our best knowledge. These findings unravel the intrinsic origin of magneto in NaCrTe2 and will stimulate us to exploring the H-sensitive transport property in more AFM materials., Comment: 16 pages, 4 figures

The recently discovered layered kagome metals AV$_3$Sb$_5$ (A = K, Rb, and Cs) with vanadium kagome networks provide a novel platform to explore correlated quantum states intertwined with topological band structures. Here we report the prominent effect of hole doping on both superconductivity and charge density wave (CDW) order, achieved by selective oxidation of exfoliated thin flakes. A superconducting dome is revealed as a function of the effective doping content. The superconducting transition temperature ($T_{\mathrm{c}}$) and upper critical field in thin flakes are significantly enhanced compared with the bulk, which is accompanied by the suppression of CDW. Our detailed analyses establish the pivotal role of van Hove singularities (VHSs) in promoting correlated quantum orders in these kagome metals. Our experiment not only demonstrates the intriguing nature of superconducting and CDW orders, but also provides a novel route to tune the carrier concentration through both selective oxidation and electric gating. This establishes AV$_3$Sb$_5$ as a tunable 2D platform for the further exploration of topology and correlation among 3$d$ electrons in kagome lattices., Comment: 13 pages, 12 figures

Here we present the superconducting property and structural stability of kagome CsV3Sb5 under in-situ high pressures. For the initial SC-I phase, its Tc is quickly enhanced from 3.5 K to 7.6 K and then totally suppressed at P~10 GPa. Further increasing the applied pressures, an SC-II phase emerges at P~15 GPa and persists up to 100 GPa. The Tc rapidly increases to the maximal value of 5.2 K at P=53.6 GPa and rather slowly decreases to 4.7 K at P=100 GPa. A two-dome-like variation of Tc in CsV3Sb5 is concluded here. The Raman measurements demonstrate that weakening of E2g model and strengthening of A1g model occur without phase transition as entering the SC-II phase, which is supported by the results of phonon spectra calculations. Electronic structure calculations reveal that exertion of pressure may bridge the gap of topological surface nontrivial states near EF, i. e. Z2 invariant. Meanwhile, it enlarges Fermi surface significantly, consistent with the increased carrier density. The findings here point out the change of electronic structure and strengthened electron-phonon coupling should be responsible for the pressure-induced reentrant SC., Comment: 10 pages, 4 figures