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Silicon photonics with the advantages of low power consumption, low cost, and high yield is a crucial technology for facilitating high-capacity optical communications and interconnects. The graphene photodetectors (GPDs) featuring broadband operation, high speed, and low integration cost can be good additions to the conventional SiGe photodetectors, supporting silicon-integrated on-chip photodetection in new wavelength bands beyond 1.6 microns (e.g., U-band and 2 microns). Here we realize a silicon-integrated four-channel wavelength division multiplexing (WDM) optical receiver based on a micro-ring resonator (MRR) array and four p-n homojunction GPDs. These GPDs based on the photo-thermoelectric (PTE) effect operating under zero (current) bias exhibit responsivities of about 1.1 V/W and flat frequency responses up to 67 GHz which is set-up limited. The GPDs show good consistence benefiting from the compact active region array (0.006 mm^2) covered by a single mechanically exfoliated hBN/graphene/hBN stack. Moreover, the WDM graphene optical receiver realized the 4 x 16 Gbps non-return to zero (NRZ) optical signal transmission. To the best of our knowledge, it is the first GPD-array-based optical receiver using high-quality mechanically exfoliated graphene and edge graphene-metal conduct with low resistance. Apparently, our design is also compatible with CVD-grown graphene, which can also result in a good consistence of the GPDs. This work shed light on the large-scale integration of GPDs with high consistency and uniformity, enabling the application of high-quality mechanically exfoliated graphene, and promoting the development of the graphene photonic integrated circuits.

The realization of ultra-compact passive silicon photonic devices is becoming more and more important for the future large-scale photonic integration as desired for many systems. Although some compact silicon photonic devices have been demonstrated by using inverse design, the device performance is still insufficient for real applications. Here, we propose and realize several representative ultra-compact advanced passive silicon photonic devices with decent performances by introducing subwavelength-grating (SWG) structures developed by our high-efficiency inverse design method. These devices are designed by optimally manipulating the multimode excitation and the multimode interference in a region defined with SWG structures. These SWG structures with excellent feature-size uniformity are more fabrication-friendly than those random nano-structures used in previous inverse-designed photonic devices. The high-efficiency of our inverse design method is attributed to a novel search-space-dimension control strategy and the efficient problem-oriented electromagnetic-field solvers available for SWG structures. Specifically, we present the realization of a 6-channel mode (de)multiplexer, a broadband 90{\deg}-hybrid, and a two-channel flat-top wavelength demultiplexer as some examples, which can hardly be realized by previously reported inverse design approaches. These devices exhibit ultra-compact footprints as well as decent performances when compared to the counterparts developed by the classical theory., Comment: 29 pages, 7 figures

Two-dimensional materials (2DMs) meet the demand of broadband and low-cost photodetection on silicon for many applications. Currently, it is still very challenging to realize excellent silicon-2DM PDs. Here we demonstrate graphene-silicon-graphene waveguide PDs operating at the wavelength-bands of 1.55 {\mu}m and 2 {\mu}m, showing the potential for large-scale integration. For the fabricated PDs, the measured responsivities are respectively ~0.15 mA/W and ~0.015 mA/W for the wavelengths of 1.55 {\mu}m and 1.96{\mu}m. In particular, the PDs exhibit a high bandwidth of ~33 GHz, an ultra-low dark current of tens of pico-amperes, a high normalized photo-to-dark-current ratio (NPDR) of 1.63x10^6 W^-1, as well as a high linear dynamic range of 3 {\mu}W-1.86 mW (and beyond) at 1.55 {\mu}m. According to the measurement results for the wavelength-bands of 1.55/2.0 {\mu}m and the theoretical modeling for the silicon-graphene heterostructure, it is revealed that internal photo-emission and photo-assisted thermionic field emission dominantly contribute to the photoresponse in the graphene-silicon Schottky junctions, which helps the future work to further improve the performance.

A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphene-metal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 {\mu}m, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 {\mu}m with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 {\mu}m. The measured responsivity is about 0.4 A/W under a bias voltage of -0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 {\mu}m., Comment: 22 pages, 7 figures, 1 table. Supplementary Materials are available

Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 {\mu}m for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 {\mu}m or longer for satisfying the increasing demands in many applications. Mid-IR waveguide photodetectors on silicon have attracted intensive attention as one of the indispensable elements for various photonic systems. Previously high-performance waveguide photodetectors on silicon were realized for the near-IR window of 1.3-1.5 {\mu}m by introducing another semiconductor material (e.g., Ge, and III-V compounds) in the active region. Unfortunately, these traditional semiconductor materials do not work well for the wavelength of ~2 {\mu}m or longer because the light absorption becomes very weak. As an alternative, two-dimensional materials provide a new and promising option for enabling active photonic devices on silicon. Here black-phosphorus (BP) thin films with optimized medium thicknesses (~40 nm) are introduced as the active material for light absorption and silicon/BP hybrid ridge waveguide photodetectors are demonstrated with a high responsivity at a low bias voltage. And up to 4.0Gbps data transmission is achieved at 2{\mu}m., Comment: 20 pages, 13 figures, 2 tables