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Due to the complex routes and the dynamic changing factors in transportation, precise traffic speed prediction is very difficult. Traditional prediction methods only focus on a single monitoring site, without establishing a relationship between different sites, so the precision is poor. The deep learning method can model traffic networks well, but suffers from information loss and the disadvantage of single input data. A multisource spatio-temporal hybrid dilated graph convolutional network (GCN) for forecasting traffic speed is proposed in this paper. A GCN based on hybrid dilated convolution can extract the influence of adjacent information and capture dynamic spatial and non-linear temporal correlations. Considering multisource data will increase the forecasting precision and improve the generalisation ability. Using a real-world data set, the performance of the proposed model was validated against other baselines (a fully connected neural network, convolutional neural network and spatio-temporal GCN). The proposed model was found to be superior to other models as it considers proximity information, which is often overlooked, and multifactorial influence. [ABSTRACT FROM AUTHOR]

In this study, thermoelectric properties of MgTi 2 O 5 -based composites were investigated. 10–30 vol.% TiN were added as a conductive reinforcement phase. MgTi 2 O 5 /TiN composites were successfully synthesized at 1373 K for 10 min via reactive spark plasma sintering. The present SPS process itself enhanced electrical conductivity of MgTi 2 O 5 more than 250 times while effectively suppressing thermal conduction by defect engineering. Moreover, compositing further remarkably improved its electrical conductivity, and hence large enhancements in the thermoelectric power factor and ZT value were achieved. The results indicate a new doping technique in MgTi 2 O 5 and enhancing thermoelectric properties of other insulating oxide materials. Image, graphical abstract [ABSTRACT FROM AUTHOR]

p -type TlSbTe 2 and its In- and Yb-doped variants were prepared by hot pressing of the elements in the stoichiometric ratios, and their thermoelectric properties were determined after verifying the purity of the samples by powder X-ray diffraction. Theoretically, TlSbTe 2 is an intrinsic semiconductor possessing a narrow band gap; however, the as-prepared TlSbTe 2 exhibited relatively high electrical conductivity, decreasing with ascending temperature, which provides evidence for the presence of p -type extrinsic charge carriers (holes) along with the positive Seebeck coefficient. Doping In onto the Tl site inserts more electrons, thereby decreasing the hole concentration; as a result, the electrical and thermal conductivity decreased and the Seebeck coefficient increased. The best thermoelectric performance of In-doped TlSbTe 2 was achieved at 625 K, with a figure of merit (zT) of 0.77. The overall best zT was improved to 0.85 at 620 K with the sample of nominal composition Tl 0.98 SbYb 0.02 Te 2. An anisotropy test was implemented by comparing the electrical conductivity and Seebeck coefficient measured on the prismatic bars cut parallel and vertical to the pressing direction. The results indicate basically isotropic behavior in polycrystalline TlSbTe 2 along these two orthogonal directions. • TlSbTe2 is bestowed with an extraordinarily low thermal conductivity. • Our processing conditions caused an increase in the figure-of-merit by 15%. • Doping with Yb caused a further increase by an additional 20%, for a total increase of 39%. • Doping with In led to no significant changes in performance. • Direction-dependent measurements revealed no significant anisotropies in the electrical properties. [ABSTRACT FROM AUTHOR]

A series of samples with the initial formula Mo 3– x Fe x Sb 7 and Mo 3– x Ni x Sb 7 have been prepared by solid state reaction at 873 K, starting from the elements in the stoichiometric ratios. The materials were compressed via hot-pressing, and their thermoelectric properties determined. Single crystal data show that Ni atoms in part occupy the cubic voids of the Mo 3 Sb 7 structure, as well as replace some Mo atoms, in contrast to the Fe analogues, where we found no evidence for Fe in the cubic voids. Supported by electronic structure calculations, replacing Mo with Fe or Ni increases the valence-electron count, thus decreases the numbers of p -type carriers of Mo 3 Sb 7 . On the other hand, filling the holes with Ni atoms appears to have no such effect. As a consequence, the Ni containing samples exhibit higher electrical conductivity than the Fe analogues, and ultimately lower thermoelectric figure-of-merit, as the p -type carrier concentration remains too high. [ABSTRACT FROM AUTHOR]

First, a large sample of Ni0.05Mo3Sb5.4Te1.6 was prepared by heating the elements in the stoichiometric ratio. β-SiC nanoparticles were added in volume fractions, f, of 0.01, 0.02, and 0.034 to three different portions of the material, and a portion without SiC nanoparticles was retained as a reference. All four samples were subjected to consolidation by hot-pressing. Furthermore, Al2O3 nanoparticles were added in volume fractions of f = 0.01, 0.0216, and 0.0325 to three other portions, again retaining a fourth protion as reference. These four samples were consolidated by spark-plasma sintering. The thermoelectric transport properties of these composites were characterized from 325 to 740 K. For the sample with 0.01 volume fraction of SiC, there was an enhancement in figure of merit by 18 % compared with the reference sample, mainly due to an 18 % reduced thermal conductivity. The 9 % reduction in thermal conductivity of the sample with 0.01 volume fraction of Al2O3 was not enough to compensate the loss in the power factor of 18 %, leading to a decrease in the figure of merit. Microstructural information obtained by SEM, TEM, and BET was used to elucidate the phase and transport properties. The spark-plasma-sintered bulk sample has a figure of merit that is 35 % higher than the bulk sample consolidated through hot-pressing. [ABSTRACT FROM AUTHOR]

In the first part of this work, thallium lanthanide tellurides with composition Tl 9 LnTe 6 (Ln = La, Ce, Pr, Nd, Sm, Gd, Tb) have been prepared and their high temperature electrical and thermal transport properties investigated. Nearly single phase samples were obtained. Rietveld refinement results showed that Tl 9 CeTe 6 had an exceptionally small unit cell volume of 1033 Å 3 . The electrical conductivity and thermal conductivity increased across the lanthanide series from La to Tb. On the other hand, the Seebeck coefficient values decreased with Ln varying from La to Tb. Tl 9 SmTe 6 or Tl 9 GdTe 6 constituted an exception, as the Seebeck coefficient of Tl 9 SmTe 6 was smaller than that of Tl 9 GdTe 6 . Tl 9 LaTe 6 has the largest figure-of-merit of this series. Thereafter, Tl 10 − x La x Te 6 samples were prepared with x = 0.90, 0.95, 1.00, 1.05, 1.10, aiming toward higher zT through composition optimization and expanding of the measurement temperature range. With the increasing La content, the unit cell volume increased, while the electrical conductivity, thermal conductivity and lattice thermal conductivity decreased, and the Seebeck coefficient increased. The highest zT = 0.57 was observed for Tl 9 LaTe 6 at 600 K. [ABSTRACT FROM AUTHOR]

Noting the steadily worsening problem of depleted fossil fuel sources, alternate energy sources have become increasingly important; these include thermoelectrics, which may use waste heat to generate electricity. To be economically viable, the thermoelectric figure-of-merit, zT, which is related to the energy conversion efficiency, needs to be in excess of unity ( zT > 1). Tl4SnTe3 and Tl4PbTe3 were reported to attain a thermoelectric figure-of-merit zTmax = 0.74 and 0.71, respectively, at 673 K. Here, the thermoelectric properties of both materials are presented as a function of x in Tl10- xSn xTe6 and Tl10- xPb xTe6, with x varying between 1.9 and 2.05, culminating in zT values in excess of 1.2. These materials are charge balanced when x = 2, according to (Tl+)8(Sn2+)2(Te2−)6 and (Tl+)8(Pb2+)2(Te2−)6 (or: (Tl+)4Pb2+(Te2−)3). Increasing x causes an increase in valence electrons, and thus a decrease in the dominating p-type charge carriers. Larger x values occur with a smaller electrical conductivity and a larger Seebeck coefficient. In each case, the lattice thermal conductivity remains under 0.5 W m−1 K−1, resulting in several samples attaining the desired zTmax > 1. The highest values thus far are exhibited by Tl8.05Sn1.95Te6 with zT = 1.26 and Tl8.10Pb1.90Te6 with zT = 1.46 around 685 K. [ABSTRACT FROM AUTHOR]

Abstract: Various materials of the formulas Mo3−x Fe x Sb7 and Mo2.6Fe0.4Sb7− y Te y have been prepared by solid state synthesis at 873K, starting from the elements in the stoichiometric ratios. The Fe content can be as high as x=0.45, while attempts to incorporate 0.5 Fe lead to the formation of FeSb2 as a minor side product. At x=0.4, the Te content can vary within 0≤y≤0.75, while the sample with y=1.0 shows FeSb2 as a minor phase. The materials were densified via hot-pressing, and their thermoelectric properties determined. Increasing both the Fe and the Te content leads to a decrease in the p-type carrier concentration, and thus an increase in Seebeck coefficient and a decrease in both electrical and thermal conductivity. In the end, the best thermoelectric properties were obtained in case of Mo2.6Fe0.4Sb6.25Te0.75, i.e. at the edge of the phase range, culminating in a figure-of-merit of zT=0.34 at 800K. [Copyright &y& Elsevier]

We present the thermoelectric properties of the quaternary telluride series Tl10- x- ySn xBi yTe6 including Seebeck coefficient ( S), electrical conductivity ( σ), and thermal conductivity ( κ). Three different Tl concentrations, namely 9, 8.67, and 8.33 Tl per formula unit, were selected followed by variations of the Sn:Bi ratio to tune the properties at each Tl concentration. Additionally, crystal structure data and electronic structure calculations were used to model the data and support the findings. The Tl9(Sn, Bi)Te6 system was found to have the highest power factor ( S2 σ) displaying a value of 8.1 μW ·cm-1 ·K-2 at 587 K, realized with Tl9Sn0.2Bi0.8Te6. Tl8.67Sn0.50Bi0.83Te6 however, displays values closer to 4 μW ·cm-1 ·K-2 at comparable temperatures. Ultimately, the thermoelectric Figure-of-merit was determined to reach a competitive 0.6 at 575 K and 525 K for Tl8.33Sn1.12Bi0.55Te6 and Tl8.67Sn0.50Bi0.83Te6, respectively, thereby outperforming the ternary variants Tl10- xSn xTe6. [ABSTRACT FROM AUTHOR]

Tl9BiTe6, a substitution variant of Tl5Te3, is one of the leading midtemperature thermoelectricsand is postulated to exceed ZT= 1 above 450 K whenprepared by zone-melting and reach ZT= 0.86 at 560K after hot-pressing. We have prepared the isostructural series Tl9Sb1–xTe6, Tl9–xSb1+xTe6, Tl9Bi1–xTe6, and Tl9–xBi1+xTe6, with xranging from 0 to 0.05, from the elements in the stoichiometricratios and determined their thermoelectric properties after hot-pressing.In theory, these tellurides are narrow-gap semiconductors when x= 0, with all elements in common oxidation states, accordingto (Tl+)9(Sb/Bi)3+(Te2–)6. The as-prepared samples of this 9-1-6 stoichiometry,however, exhibit relatively high electrical conductivity, which decreaseswith increasing temperature, indicative of the presence of extrinsiccharge carriers. The Seebeck coefficient is generally above +100 μVK–1. Decreasing the Sb and Bi content increasesthe hole carrier concentration and thus increases the electrical conductivitywhile decreasing the Seebeck coefficient. The best feature of thesethermoelectrics is their low thermal conductivity, which is consistentlywell below 0.7 W m–1K–1. In combinationwith reasonable electrical conductivity and a high Seebeck coefficient,high ZTvalues in excess of 1 can also be achievedvia simple hot-pressing after experimental optimization of the carrierconcentration via introducing deficiencies on the Bi site. Moreover,the variants with Sb instead of Bi exhibit similar thermoelectricperformance, a result of the combination of a better electrical performanceand higher thermal conductivity. [ABSTRACT FROM AUTHOR]

The original definition of multiferroics is that one owns two or three "ferro" properties, such as ferroelectricity, ferroelasticity, and ferromagnetism. Furthermore, novel effects would be generated by the cross-coupling effect among various orders of multiferroic materials, and it has a broad application prospect in electronic information, sensing, storage, wireless network and other fields. At present, researchers are still focus on the multiferroic materials with strong magnetoelectric coupling effect at room temperature. However, the realization and application of devices based on multiferroics are still on the way. Strain engineering is an effective way that can influence the physical properties of multiferroic materials. The physical properties of materials such as electricity, magnetism, and photoacoustic could be influenced by strain engineering through the interaction of lattice with electrons, spins, and orbits. Tuning the structural and physical properties of ferroelectric thin films by strain has been paid extensive attention. Through investigating the research of strain engineering in multiferroic materials in this paper, herein, the strain engineering in multiferroics are summarized and effect of strain engineering on the physical properties of multiferroics is reviewed. It is prospected that the current work may provide research ideas for the investigation and development of multiferroic materials. [ABSTRACT FROM AUTHOR]

Dielectric energy storage capacitors are promising avenues for high power density and fast charge/discharge applications. This study focused on the deposition of Bi 3.25 La 0.75 Ti 3 O 12 (BLT) films onto Pt/Ti/SiO 2 /Si substrates by a sol-gel technology. Through the synergistic strategy of interface engineering and the preferred orientation of BLT film, the residual polarization was minimized, and the breakdown field strength was enhanced. As a result, the recoverable energy density (U rec) was significantly improved to 62.97 J/cm3 with a high energy storage efficiency (η) of 85.88 %. Notably, the synthesized BLT film exhibited excellent temperature (25–150 °C) and frequency (100 Hz-10 kHz) stability of U rec (>30 J/cm3) and η (>75 %) at ∼2200 kV/cm. The finding demonstrates the potential of BLT thin film as a lead-free material for the next generation of pulse power capacitors. Overall, the synergistic approach of interface engineering and preferred orientation proves to be an effective way to improve the performance of dielectric energy storage capacitors. [ABSTRACT FROM AUTHOR]

Bi2Se3, one of the most extensively studied topological insulators, has received significant attention, and abundant research has been dedicated to exploring its surface electronic properties. However, little attention has been given to its piezoelectric properties. Herein, we investigate the piezoelectric response in a five-layer Bi2Se3 nanosheet using scanning probe microscopy (SPM) techniques. The piezoelectricity of Bi2Se3 is characterized using both conventional piezoresponse force microscopy (PFM) and a sequential excitation scanning probe microscopy (SE-SPM) technique. To confirm the linear piezoelectricity of Bi2Se3 two-dimensional materials, measurements of point-wise linear and quadratic electromechanical responses are carried out. Furthermore, the presence of polarization and relaxation is confirmed through hysteresis loops. As expected, the Bi2Se3 nanosheet exhibits an electromechanical solid response. Due to the inevitable loss of translational symmetry at the crystal edge, the lattice of the odd-layer Bi2Se3 nanosheet is noncentrosymmetric, indicating its potential for linear piezoelectricity. This research holds promise for nanoelectromechanical systems (NEMS) applications and future nanogenerators. [ABSTRACT FROM AUTHOR]

Nearly single phase samples of Tl9LnTe6 (Ln: La, Ce, Pr, Nd, Sm, Gd, Tb) and Tl10-xLaxTe6 (x = 0.9-1.1) are prepared by melting of the elements (C-coated evacuated quartz tubes, 1200 K, 24 h). [ABSTRACT FROM AUTHOR]

The quaternary sulfides Tl Ln Ag 2 S 3 ( Ln : Nd, Sm and Gd) were prepared via solid state reactions by heating the elements in the stoichiometric ratio under exclusion of air up to 750 °C. They are isostructural, adopting a new structure type in the space group Pnma with a = 13.8141(3) Å, b = 4.1649(1) Å, c = 11.4008(2) Å, V = 655.94(2) Å 3 , Z = 4 for TlNdAg 2 S 3 . The crystal structure contains AgS 4 tetrahedra and Ln S 6 octahedra, which are interconnected to form linear chains running along the b axis. The melting point of TlNdAg 2 S 3 was determined to be 540 °C. Electronic structure calculations show that these materials are semiconductors in agreement with their orange/yellow colors. [ABSTRACT FROM AUTHOR]

The title compounds are prepared from stoichiometric mixtures of the elements (glassy carbon crucibles, 923 K) and characterized by powder and single crystal XRD, DFT computations, Seebeck coefficient, and electrical and thermal conductivity measurements. [ABSTRACT FROM AUTHOR]

CuInP2S6 (CIPS) is a novel two-dimensional (2D) van der Waals (vdW) ferroelectric layered material with a Curie temperature of TC~315 K, making it promising for great potential applications in electronic and photoelectric devices. Herein, the ferroelectric and electric properties of CIPS at different thicknesses are carefully evaluated by scanning probe microscopy techniques. Some defects in some local regions due to Cu deficiency lead to a CuInP2S6–In4/3P2S6 (CIPS–IPS) paraelectric phase coexisting with the CIPS ferroelectric phase. An electrochemical strain microscopy (ESM) study reveals that the relaxation times corresponding to the Cu ions and the IPS ionospheres are not the same, with a significant difference in their response to DC voltage, related to the rectification effect of the ferroelectric tunnel junction (FTJ). The electric properties of the FTJ indicate Cu+ ion migration and propose that the current flow and device performance are dynamically controlled by an interfacial Schottky barrier. The addition of the ferroelectricity of CIPS opens up applications in memories and sensors, actuators, and even spin-orbit devices based on 2D vdW heterostructures. [ABSTRACT FROM AUTHOR]

With the increasing number of motor vehicles, exhaust emission has become a major source of urban pollution. Most studies are limited to the prediction of pollutant concentration, which cannot clearly indicate the change of pollution emissions and regional relationship. In this paper, we propose an emission propagation model of vehicle source pollution based on complex network in order to intelligently mine the interaction and propagation rules hidden behind dynamic spatiotemporal data. First, aiming at the problems of low resolution and insufficient data volume of vehicle emission data, a high-resolution pollution emission data is generated based on the COPERT (Computer Program to Calculate Emissions from Road Transport). For study the influence of causality between regions, a propagation model is designed based on the convergent cross mapping method to transform the emission time series into a complex network. In addition, we propose a novel key node mining algorithm using hybrid local and global information to identify areas of heavy pollution. Experimental results on real datasets demonstrate that the spread of pollution follows certain rules and is also affected by regional influences. Moreover, the proposed algorithm is superior to the state-of-the-art methods. [ABSTRACT FROM AUTHOR]

Optimization of the carrier concentration by doping/alloying is a key prerequisite for improving thermoelectric performance. In reality, it is, however, challenging to identify effective dopants in some specific systems. Herein, we discovered that Y doping significantly reduced the carrier concentration, enhanced the power factor, and, therefore, boosted thermoelectric performance. The high Y-doping efficiency had origin in the fact that the compensating effect due to Ge vacancies was weaker in comparison to other dopants in GeTe because the slightly increased rhombohedral interaxial angle suggested that the Ge-vacancy concentration would not be altered dramatically. In addition, first-principles calculations revealed that Y doping did not induce significant modifications on the band structure, consistent with electrical transport measurement results. Moreover, Bi doping was found to be more powerful than Sb doping to further increase electrical resistivity and to enhance performance in which the highest peak ZT ∼ 1.8 together with a high average ZT ∼ 1.1 from 300 K to 723 K was achieved. Our work not only highlighted the efficacy of Y doping in enhancing the thermoelectric performance of the GeTe system but also developed advanced GeTe-based materials for power generation applications. [ABSTRACT FROM AUTHOR]

Modification of crystal symmetry induced by chemical doping or alloying is well known to optimize the charge carrier transport properties in thermoelectric materials. Historically, the altered defect chemistry of the targeted materials, however, has long been neglected or underestimated, which may, in turn, favorably or adversely affect the thermoelectric properties. Herein, using a case study of thermoelectric GeTe, first, the hidden role of rhombohedral distortion degree on the Ge‐vacancy formation energy is theoretically unraveled, and it is experimentally found that Sc and Bi codoping realize a superior thermoelectric performance. Density functional theory calculations demonstrate that the distorted rhombohedral lattice closer to cubic would unexpectedly induce the significantly decreased formation energy of Ge vacancies, resulting in the spontaneous formation of higher‐concentration Ge vacancies. Sc doping is found to be the most effective dopant to reduce the carrier concentration without obviously affecting the rhombohedral distortion degree, leading to the realization of a record‐high power factor. Benefiting from the suppressed thermal conductivity by further Bi doping, an ultrahigh average ZT ≈1.2 from 300 to 723 K is achieved. These discoveries provide new insights into the relationship between crystal symmetry and defect chemistry, and also promote GeTe materials for future thermoelectric applications. [ABSTRACT FROM AUTHOR]

Thermoelectric thin films are of great interest for self-powering Internet of Things (IoT) nodes via energy harvesting. Heusler-type Fe 2 VAl attracts some attention for room-temperature thermoelectric applications. However, the large overall thermal conductivity leads to a poor performance that restricts the current investigations. Herein, we report a comprehensive study of structural, thermoelectric, and magnetic properties of Fe 2 V 0.9 Ti 0.1 Al thin films on quartz substrate, grown by magnetron sputtering. It is found that high-temperature annealing is more effective than the long-time annealing at the low temperatures to stabilize the L 2 1 type structure of Fe 2 VAl, leading to a much larger Seebeck coefficient and slightly higher thermal conductivity. More importantly, the significant off-stoichiometry phenomenon, namely Fe-rich composition, contributes to n-type conduction of thin films. Both the picosecond and nanosecond time-domain thermoreflectance techniques were employed to successfully measure the thin-film thermal conductivities, merely one-third of bulk material, demonstrating the effectiveness of utilizing nanostructuring to reduce the thermal conductivity of Fe 2 VAl. Moreover, magnetic susceptibility measurements reveal that thin films are ferromagnets, while the bulk sample is characterized by paramagnetism. Our finding sheds new light on the composition-structure-property relationship of Fe 2 VAl thin films for future related applications. Image, graphical abstract The significant off-stoichiometry of Ti doped Fe 2 VAl films in the L2 1 type structure grown on quartz substrate leads to the unexpected n-type conduction and strong ferromagetism, which are may be helpful for thermoelectric, magnetoelectronic, and also spintronic applications. [ABSTRACT FROM AUTHOR]

Abstract: Ideal materials for modern electronics packaging should be highly thermoconductive. This may be achieved through designing multifunctional polymer composites. Such composites may generally be achieved via effective embedment of functional inorganic fillers into desirable polymeric bodies. Herein, two types of high‐performance 3D h‐BN porous frameworks (3D‐BN), namely, h‐BN nanorod‐assembled networks and nanosheet‐interconnected frameworks, are successfully created via an in situ carbothermal reduction chemical vapor deposition substitution reaction using carbon‐based nanorod‐interconnected networks as templates. These 3D‐BN porous materials with densely interlinked frameworks, excellent mechanical robustness and integrity, highly isotropous and multiple heat transfer paths, enable reliable fabrications of diverse 3D‐BN/polymer porous composites. The composites exhibit combinatorial multifunctional properties, such as excellent mechanical strength, light weight, ultralow coefficient of thermal expansion, highly isotropic thermal conductivities (≈26–51 multiples of pristine polymers), relatively low dielectric constants and super‐low dielectric losses, and high resistance to softening at elevated temperatures. In addition, the regarded 3D‐BN frameworks are easily recycled from their polymer composites, and may be reliably reutilized for multifunctional reuse. Thus, these materials should be valuable for new‐era advanced electronic packaging and related applications. [ABSTRACT FROM AUTHOR]

• High-quality Bi 3.25 La 0.75 Ti 3 O 12 /SrTiO 3 thin films were prepared by sol–gel. • The interface hinders the development of the electronic tree, achieving enhanced breakdown strength. • Enhanced energy storage performance was achieved in laminated Bi 3.25 La 0.75 Ti 3 O 12 /SrTiO 3 film. With the trend of miniaturization and integration of integrated circuits, thin film dielectric capacitors with high energy storage density and fast charge/discharge rate have attracted more and more attention. In this work, lead-free thin film dielectric capacitors with different stacking structures based on Bi 3.25 La 0.75 Ti 3 O 12 and SrTiO 3 were prepared by a sol–gel method on Pt/Ti/SiO 2 /Si substrate. By processing optimization, enhanced breakdown strength was obtained with fine hysteresis loops for the laminated Bi 3.25 La 0.75 Ti 3 O 12 /SrTiO 3 films, leading to excellent energy storage performance of energy storage density ∼ 58.96 J/cm3 and efficiency ∼ 81.59 %, which is attractive for the dielectric film energy storage capacitors. [ABSTRACT FROM AUTHOR]

Background and Objective: Oesophageal cancer is one of the most common and deadliest cancers worldwide. Our previous population-based study reported a high prevalence of oesophageal cancer in Chaoshan, Guangdong Province, China. Ancestors of the Chaoshan population migrated from the Taihang Mountain region of north-central China, which is another high-incidence area for oesophageal cancer. The purpose of the present study was to obtain evidence of inherited susceptibility to oesophageal cancer in the Chaoshan population, with reference to the Taihang Mountain population, with the eventual goal of molecular identification of the disease genes. Methods: We conducted familial correlation, commingling, and complex segregation analyses of 224 families from the Chaoshan population and 403 families from the Taihang population using the FPMM program of S.A.G.E. version 5.3.0. A second analysis focused on specific families having large numbers of affected individuals or early onset of the disease. Results: For the general population, moderate sib-sib correlation was noticed for esophageal cancer. Additionally, brother-brother correlation was even higher. Commingling analyses indicated that a three-component distribution model best accounts for the variation in age of onset of oesophageal cancer, and that a multifactorial model provides the best fit to the general population data. An autosomal dominant mode and a dominant or recessive major gene with polygenic inheritance were found to be the best models of inherited susceptibility to oesophageal cancer in some large families. Conclusions: The current results provide evidence for inherited susceptibility to oesophageal cancer in certain high-risk groups in China, and support efforts to identify the susceptibility genes. [ABSTRACT FROM AUTHOR]

The synthesis of pure pristine and vanadium-doped MnSi γ (γ = 1.74) powder by a relatively fast, 'low temperature' and high yield magnesioreduction process is described. The powder obtained by this innovative route is composed of well crystallized grains with sizes ranging from 20 to 500 nm and free from any MnSi precipitates. Mesostructured densified pellets with average grain sizes as small as 550 nm are obtained by spark plasma sintering (SPS). Detailed structural and microstructural characterization of the samples were realized at every stage of the process, highlighting a high concentration of defects such as orientational or spacing anomalies of the Nowotny phase, γ variations within a single grain and dislocations. Accordingly a significant decrease of the lattice thermal conductivity is evidenced in comparison to conventionally synthesized (arc-melting/SPS) samples having similar density and (V/)Mn/Si stoichiometry. The thermoelectric properties of these materials are discussed in regard of their complex microstructure. Image 1 • Mesostructured higher manganese silicides are synthesized by magnesioreduction. • Crystal structures are refined in composite-incommensurate unit-cells. • Microstructures are examined by EBSD and TEM. • The decrease in thermal conductivity is correlated to the microstructure. [ABSTRACT FROM AUTHOR]