16 results on '"Guo, Taozhi"'
Search Results
2. Spatial deformation of many-body quantum chaotic systems and quantum information scrambling
- Author
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Goto, Kanato, Guo, Taozhi, Nosaka, Tomoki, Nozaki, Masahiro, Ryu, Shinsei, and Tamaoka, Kotaro
- Subjects
Quantum Physics ,Condensed Matter - Statistical Mechanics ,Condensed Matter - Strongly Correlated Electrons ,High Energy Physics - Theory - Abstract
We study the effect of spatial inhomogeneity on quantum information scrambling, a process of spreading and locally hiding quantum information in quantum many-body systems. As a paradigmatic example, we consider the quantum chaotic Ising spin chain and its inhomogeneous counterpart that is obtained by modulating the Hamiltonian density. Specifically, we consider the so-called M\"obius and sine-square deformations that were previously studied in the context of (1+1)-dimensional conformal field theories ($1+1$ d CFTs). In the spatial region where the modulated energy density is small, these deformations prevent the spreading of quantum information while in the region where the modulated energy density is large quantum information scrambling is accelerated. This suggests that we can control the scrambling and butterfly effect by spatially modulating the Hamiltonian density. We also found that the time dependence of energy density exhibits the signature of black-hole-like excitation found in the $1+1$ d CFTs even in the chaotic spin chain., Comment: 16 pages, 11 figures
- Published
- 2023
3. Non-Hermitian boost deformation
- Author
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Guo, Taozhi, Kawabata, Kohei, Nakai, Ryota, and Ryu, Shinsei
- Subjects
Condensed Matter - Strongly Correlated Electrons ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
The Hatano-Nelson model is one of the most prototypical non-Hermitian models that exhibit the intrinsic non-Hermitian topological phases and the concomitant skin effect. These phenomena unique to non-Hermitian topological systems originate from the Galilean transformation. Here, we extend such an idea to a broader range of systems based on an imaginary boost deformation and identify the corresponding energy-twisted boundary conditions. This imaginary boost deformation complexifies spectral parameters of integrable models and can be implemented by the coordinate Bethe ansatz. We apply the imaginary boost deformation to several typical integrable models, including free fermions, the Calogero-Sutherland model, and the XXZ model. We find the complex-spectral winding in free fermion models under the periodic boundary conditions and the non-Hermitian skin effect under the open boundary conditions. The interaction effect is also shown in the two-particle spectrum of the XXZ model., Comment: 13 pages, 8 figures. Added references. Corrected typos
- Published
- 2023
- Full Text
- View/download PDF
4. Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films
- Author
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Inbar, Hadass S., Ho, Dai Q., Chatterjee, Shouvik, Pendharkar, Mihir, Engel, Aaron N., Dong, Jason T., Khalid, Shoaib, Chang, Yu Hao, Guo, Taozhi, Fedorov, Alexei V., Lu, Donghui, Hashimoto, Makoto, Read, Dan, Janotti, Anderson, and Palmstrøm, Christopher J.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Other Condensed Matter - Abstract
Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. ARPES shows hole-carrier rich topologically-trivial semi-metallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum well states. DFT predicted Fermi wavevectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.
- Published
- 2022
- Full Text
- View/download PDF
5. Energy-twisted boundary condition and response in one-dimensional quantum many-body systems
- Author
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Nakai, Ryota, Guo, Taozhi, and Ryu, Shinsei
- Subjects
Condensed Matter - Strongly Correlated Electrons - Abstract
Thermal transport in condensed matter systems is traditionally formulated as a response to a background gravitational field. In this work, we seek a twisted-boundary-condition formalism for thermal transport in analogy to the $U(1)$ twisted boundary condition for electrical transport. Specifically, using the transfer matrix formalism, we introduce what we call the energy-twisted boundary condition, and study the response of the system to the boundary condition. As specific examples, we obtain the thermal Meissner stiffness of (1+1)-dimensional CFT, the Ising model, and disordered fermion models. We also identify the boost deformation of integrable systems as a bulk counterpart of the energy-twisted boundary condition. We show that the boost deformation of the free fermion chain can be solved explicitly by solving the inviscid Burgers equation. We also discuss the boost deformation of the XXZ model, and its nonlinear thermal Drude weights, by studying the boost-deformed Bethe ansatz equations., Comment: 20 pages, 11 figures. Corrected typos
- Published
- 2022
- Full Text
- View/download PDF
6. Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films
- Author
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Inbar, Hadass S, Ho, Dai Q, Chatterjee, Shouvik, Pendharkar, Mihir, Engel, Aaron N, Dong, Jason T, Khalid, Shoaib, Chang, Yu Hao, Guo, Taozhi, Fedorov, Alexei V, Lu, Donghui, Hashimoto, Makoto, Read, Dan, Janotti, Anderson, and Palmstrøm, Christopher J
- Subjects
Quantum Physics ,Physical Sciences ,Condensed Matter Physics ,Macromolecular and materials chemistry ,Materials engineering ,Condensed matter physics - Abstract
Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular-beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band-structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density-functional theory (DFT) calculations. ARPES shows a hole-carrier rich, topologically trivial, semimetallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum-well states. DFT-predicted Fermi wave vectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole-carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals.
- Published
- 2022
7. Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler Pt1−xAuxLuSb
- Author
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Chatterjee, Shouvik, de Lima, Felipe Crasto, Logan, John A, Fang, Yuan, Inbar, Hadass, Goswami, Aranya, Dempsey, Connor, Dong, Jason, Khalid, Shoaib, Brown-Heft, Tobias, Chang, Yu-Hao, Guo, Taozhi, Pennachio, Daniel J, Wilson, Nathaniel, Chikara, Shalinee, Suslov, Alexey, Fedorov, Alexei V, Read, Dan, Cano, Jennifer, Janotti, Anderson, and Palmstrøm, Christopher J
- Subjects
Physical Sciences ,Condensed Matter Physics ,Macromolecular and materials chemistry ,Materials engineering ,Condensed matter physics - Abstract
Topological materials often exhibit remarkably linear nonsaturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically nontrivial states in the emergence of such a behavior has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers, we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise gives rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semimetallic bulk band structure, as is the case in multifunctional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.
- Published
- 2021
8. Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb
- Author
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Chatterjee, Shouvik, de Lima, Felipe Crasto, Logan, John A., Fang, Yuan, Inbar, Hadass, Goswami, Aranya, Dempsey, Connor, Khalid, Shoaib, Brown-Heft, Tobias, Chang, Yu-Hao, Guo, Taozhi, Pennacchio, Daniel, Wilson, Nathaniel, Dong, Jason, Chikara, Shalinee, Suslov, Alexey, Fedorov, Alexei V., Read, Dan, Cano, Jennifer, Janotti, Anderson, and Palmstrom, Christopher J.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures., Comment: 11 pages, 5 figures. Supplementary Material contains 6 sections and 16 figures
- Published
- 2020
- Full Text
- View/download PDF
9. Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
- Author
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Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S., Guo, Taozhi, Chang, Yu-Hao, Young, Elliot, Fedorov, Alexei V., Read, Dan, Janotti, Anderson, and Palmstrøm, Christopher J.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a novel, two-dimensional, interfacial hole gas and is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultra-thin limit. Our work lays out a general strategy of utilizing confined thin film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously, provides insights into its origin., Comment: 14 pages, 6 figures, Supplementary Information 11 pages, 10 figures
- Published
- 2020
- Full Text
- View/download PDF
10. Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy
- Author
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Chatterjee, Shouvik, Khalid, Shoaib, Inbar, Hadass S, Goswami, Aranya, Guo, Taozhi, Chang, Yu-Hao, Young, Elliot, Fedorov, Alexei V, Read, Dan, Janotti, Anderson, and Palmstrøm, Chris J
- Subjects
Physical Sciences ,Condensed Matter Physics ,cond-mat.mtrl-sci ,cond-mat.mes-hall - Abstract
Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.
- Published
- 2021
11. Spatial deformation of many-body quantum chaotic systems and quantum information scrambling
- Author
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Goto, Kanato, primary, Guo, Taozhi, additional, Nosaka, Tomoki, additional, Nozaki, Masahiro, additional, Ryu, Shinsei, additional, and Tamaoka, Kotaro, additional
- Published
- 2024
- Full Text
- View/download PDF
12. Non-Hermitian boost deformation
- Author
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Guo, Taozhi, primary, Kawabata, Kohei, additional, Nakai, Ryota, additional, and Ryu, Shinsei, additional
- Published
- 2023
- Full Text
- View/download PDF
13. Twisted-Boundary-Condition Formalism for Thermal Transport and an Application to the One-Dimensional XY Spin Chain
- Author
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Nakai, Ryota, primary, Guo, Taozhi, additional, and Ryu, Shinsei, additional
- Published
- 2023
- Full Text
- View/download PDF
14. Energy-twisted boundary condition and response in one-dimensional quantum many-body systems
- Author
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Nakai, Ryota, primary, Guo, Taozhi, additional, and Ryu, Shinsei, additional
- Published
- 2022
- Full Text
- View/download PDF
15. Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: The case of topological half-Heusler \udPt\ud1\ud−\udx\udAu\udx\udLuSb
- Author
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Chatterjee, Shouvik, de Lima, Felipe Crasto, Logan, John A., Fang, Yuan, Inbar, Hadass, Goswami, Aranya, Dempsey, Connor, Dong, Jason, Khalid, Shoaib, Brown-Heft, Tobias, Chang, Yu-Hao, Guo, Taozhi, Pennachio, Daniel J., Wilson, Nathaniel, Chikara, Shalinee, Suslov, Alexey, Fedorov, Alexei V., Read, Dan, Cano, Jennifer, Janotti, Anderson, and Palmstrøm, Christopher J.
- Abstract
Topological materials often exhibit remarkably linear nonsaturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically nontrivial states in the emergence of such a behavior has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers, we controllably tune the LMR behavior in \udPt\ud1\ud−\udx\udAu\udx\udLuSb\ud into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise gives rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive \udg\ud factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semimetallic bulk band structure, as is the case in multifunctional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.
- Published
- 2021
16. New growth rises out of historic ruin: Adaptive reuse of Christchurch Cathedral
- Author
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Guo, Taozhi
- Subjects
- ChristChurch Cathedral (Christchurch, N.Z.), Christchurch (N.Z.), New Zealand, Christchurch rebuild, heritage conservation, Christchurch 2010-2011 earthquakes, civic centres, adaptive reuse of buildings, 120102 Architectural Heritage and Conservation
- Abstract
RESEARCH QUESTION: How could the Christchurch Cathedral be rebuilt and adapted using contemporary technology to meet the demands of a modern society and economy? ABSTRACT: In New Zealand, in 2011, Christchurch Cathedral was severely damaged in an earthquake. Before the 2011 earthquake, the Cathedral and Cathedral Square were the physical and social centre of Christchurch. For locals and tourists, Cathedral Square is not just a religious place, but also a centre of leisure and entertainment. But, for almost a decade after 2011, the site has been closed due to safety issues. Initially, Bishop Victoria Matthews decided the original Cathedral should be demolished and replaced with a new, contemporary design. But various groups opposed the intention of the church and, through negotiations, the Anglican Church finally decided in 2017 to reinstate the Cathedral using a combination of repair, restoration, reconstruction/rebuild and seismic strengthening. However, to restore the Cathedral to its original appearance using traditional technologies and materials is also a kind of damage to the history and memory of the Cathedral, because too much restoration work makes the line between the new and the old difficult to identify. And if the Cathedral is fully reconstructed or restored to its original form, will the history or the memory associated with the time of earthquake be ignored or reduced?
- Published
- 2021
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