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Granular flow of steel beads from dilute flow to dense flow on an inclined two-dimensional channel is studied. The initial inflow Q0 is always a dilute flow. A transition from dilute to dense is observed when D≤Dc. In the dense flow the outflow rate (Q) depends only on opening (D), given by [Formula: see text]. For different inflow rate Q0 in the dilute flow case, the relation between the transition critical exit width (Dc) and the channel width (W) is given. And in larger inflow, the critical exit width is approximately in proportion to the square root of inflow rate, [Formula: see text].

Amorphous SiOx-based memory films are fabricated at room temperature, and study on their resistive switching characteristics and improvement approaches is performed. Multilevel resistive states with large ratio 1: ∼102: 3 × 105 and long retention exceeding 2 × 106 s at ambient temperature and humidity are observed in Cu/SiOx (9 nm)-W (∼2 nm)-SiOx (9 nm)/Pt ultrathin stack. Nonvolatile switching is consistently realized in microscopy. Based on investigations of microscopic conduction and microstructure, tungsten incorporation with copper as relay bridges for conducting filaments is proposed to attribute to the performance improvement and the multilevel switching mechanism.