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Hyperuniform disordered photonic materials have recently been shown to display large, complete photonic band gaps and isotropic optical properties, and are emerging as strong candidates for a plethora of optoelectronic applications, making them competitive with many of their periodic and quasiperiodic counterparts. In this work, high quality factor optical cavities in hyperuniform disordered architectures are fabricated through semiconductor slabs and experimentally addressed by scanning near-field optical microscopy. The wide range of confined cavity modes that we detect arise from carefully designed local modifications of the dielectric structure. Previous works on hyperuniform disordered photonic systems have previously identified several Anderson localized states spectrally located at the PBG edges with relatively high quality factors. In this work, by engineering the structural parameters of the cavity, we achieve an experimental quality factor of order 6000 (higher than the one of the Anderson states) and we demonstrate that three types of localized modes of different nature coexist within a small area and in a relatively narrow spectral window of the disordered correlated system. Their compatibility with general boundary constraints, in contrast with ordered architectures that suffer strict layout constraints imposed by photonic crystals' axes orientation, makes optical cavities in disordered hyperuniform patterns a flexible optical insulator platform for planar optical circuits., Comment: 9 pages, 5 figures

We analyze the change in the spontaneous decay rate, or Purcell effect, of an extended quantum emitter in a structured photonic environment. Based on a simple theory, we show that the cross-density of states is the central quantity driving interferences in the emission process. Using numerical simulations in realistic photonic cavity geometries, we demonstrate that a structured cross-density of states can induce subradiance or superradiance, and change subtantially the emission spectrum. Interestingly, the spectral lineshape of the Purcell effect of an extended source cannot be predicted from the sole knowledge of the spectral dependence of the local density of states.

We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth rate thanks to the presence of preferential nucleation sites at the step edges. A 100 nm InAlAs metamorphic layer with In content > 50% is already almost fully relaxed with a very flat surface. The quantum dots emit at the 1.3 {\mu}m telecom O-band with the fine structure splitting as low as 16 {\mu}eV, thus making them suitable as photon sources in quantum communication networks using entangled photons., Comment: 13 pages, 4 figures

Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H$_2$ molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex., Comment: 11 pages, 12 figures

Microcavities and nanoresonators are characterized by their quality factors Q and mode volumes V. While Q is unambiguously defined, there are still questions on V and in particular on its complex-valued character, whose imaginary part is linked to the non-Hermitian nature of open systems. Helped by cavity perturbation theory and near field experimental data, we clarify the physics captured by the imaginary part of V and show how a mapping of the spatial distribution of both the real and imaginary parts can be directly inferred from perturbation measurements. This result shows that the mathematically abstract complex mode volume in fact is directly observable.

The electron transport layer (ETL) plays a fundamental role in perovskite solar cells. Recently, graphene-based ETLs have been proved to be good candidate for scalable fabrication processes and to achieve higher carrier injection with respect to most commonly used ETLs. In this work we experimentally study the effects of different graphene-based ETLs in sensitized MAPI solar cells. By means of time-integrated and picosecond time-resolved photoluminescence techniques, the carrier recombination dynamics in MAPI films embedded in different ETLs is investigated. Using graphene doped mesoporous TiO2 (G+mTiO2) with the addition of a lithium-neutralized graphene oxide (GO-Li) interlayer as ETL, we find that the carrier collection efficiency is increased by about a factor two with respect to standard mTiO2. Taking advantage of the absorption coefficient dispersion, we probe the MAPI layer morphology, along the thickness, finding that the MAPI embedded in the ETL composed by G+mTiO2 plus GO-Li brings to a very good crystalline quality of the MAPI layer with a trap density about one order of magnitude lower than that found with the other ETLs. In addition, this ETL freezes MAPI at the tetragonal phase, regardless of the temperature. Graphene-based ETLs can open the way to significant improvement of perovskite solar cells., Comment: 7 pages, 5 figures, Supporting Information

We present experimental evidence for the different mechanisms driving the fluctuations of the local density of states (LDOS) in disordered photonic systems. We establish a clear link between the microscopic structure of the material and the frequency correlation function of LDOS accessed by a near-field hyperspectral imaging technique. We show, in particular, that short- and long-range frequency correlations of LDOS are controlled by different physical processes (multiple or single scattering processes, respectively) that can be---to some extent---manipulated independently. We also demonstrate that the single scattering contribution to LDOS fluctuations is sensitive to subwavelength features of the material and, in particular, to the correlation length of its dielectric function. Our work paves a way towards a complete control of statistical properties of disordered photonic systems, allowing for designing materials with predefined correlations of LDOS., Comment: 5+9 pages, 5+6 figures. Fixed confusion of references between the main text and the supplemental material in version 2

We present a detailed investigation concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focussing on the exciton formation and the transition from the nonthermal to the thermal regime. The time-resolved kinetics of LO-phonon replicas is used to address the energy relaxation in the excitonic band. From ps time-resolved spectra we bring evidence for a long lasting non-thermal excitonic distribution which accounts for the rst 50 ps. Such a behavior is con rmed in di erent experimental conditions, both when non-resonant and resonant excitation are used. At low excitation power density the exciton formation and their subsequent thermalization is dominated by impurity scattering rather than by acoustic phonon scattering. The estimate of the average energy of the excitons as a function of delay after the excitation pulse provides information on the relaxation time, which describes the evolution of the exciton population to the thermal regime., Comment: 9 pages,8 figures

We study photon bunching phenomena associated with biexciton-exciton cascade in single GaAs self-assembled quantum dots. Experiments carried out with a pulsed excitation source show that significant bunching is only detectable at very low excitation, where the typical intensity of photon streams is less than the half of their saturation value. Our findings are qualitatively understood with a model which accounts for Poissonian statistics in the number of excitons, predicting the height of a bunching peak being determined by the inverse of probability of finding more than one exciton., Comment: 6 pages, 6 figs to appear in Phys. Rev. B

We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we observed nearly perfect single photon emission from an isolated QD at 670 nm wavelength. For higher excitation, multiple PL lines appeared on the spectra, reflecting the formation of exciton complexes. Cross-correlation functions between these lines showed either bunching or antibunching behavior, depending on whether the relevant emission was from a biexciton cascade or a charged exciton recombination., Comment: 5 pages, 3 figures

Second-order correlation functions for photon pulses associated with exciton-biexciton cascades are theoretically derived. A finite efficiency in photon detection and statistical distribution in exciton numbers are taken into account. It is found that the bunching peak height of photon statistics (g(2)(0)) depends on the mean number of excitons, N, and significant bunching is only detectable at very low excitation, N<<2., Comment: 3 pages, revTeX4

Photoemission from a single self-organized GaAs/AlGaAs quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive relaxation of multiexcitons. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD., Comment: 4 pages, 4 figures, to be published in Phys. Rev. B, Rapids