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A crucial role in the miniaturization of electronic and photonic components is played by the integration of ferroelectric thin films on silicon (Si) or silicon nitride (SiN) based platforms. Since the properties of ferroelectric thin films strongly depend on their texture quality and crystallographic orientation, the integration of thin films on these platforms is far from trivial. Consequently, this leads to slow, complex and expensive integration processes. To bridge this gap, a high-throughput method for the integration of highly textured ferroelectric thin films on Si or SiN-based platforms is needed. Therefore, we have investigated a method to facilitate the integration of fiber textured ferroelectric thin films by using an ultrathin (∼7 nm) self out-of-plane oriented La2O2CO3 template film. In this paper, we report a local deposition route of the La2O2CO3 thin film by the scalable inkjet printing method, its inherent out-of-plane crystal orientation, and its lattice match with various ferroelectric thin films. The use of the La2O2CO3 template film as an integration tool for (Pb(Zr,Ti)O3, BaTiO3, and BiFeO3) thin films eventually results in strongly fiber-textured ferroelectric stacks, regardless of substrate type. Consequently, the La2O2CO3 thin film has the potential to serve as a high-throughput integration tool for fiber textured ferroelectric thin films on Si or SiN-based platforms. Moreover, this integration tool could pave the way for large-scale miniaturization of photonic or electronic devices such as phase modulators, resonators, capacitors, etc. [ABSTRACT FROM AUTHOR]

There is a growing demand to attain organic materials with high electron mobility, μe, as current reliable reported values are significantly lower than those exhibited by their hole mobility counterparts. Here, it is shown that a well‐known nonfullerene‐acceptor commonly used in organic solar cells, that is, BTP‐4F (aka Y6), enables solution‐processed organic thin‐film transistors (OTFT) with a μe as high as 2.4 cm2 V−1 s−1. This value is comparable to those of state‐of‐the‐art n‐type OTFTs, opening up a plethora of new possibilities for this class of materials in the field of organic electronics. Such efficient charge transport is linked to a readily achievable highly ordered crystalline phase, whose peculiar structural properties are thoroughly discussed. This work proves that structurally ordered nonfullerene acceptors can exhibit intrinsically high mobility and introduces a new approach in the quest of high μe organic materials, as well as new guidelines for future materials design. [ABSTRACT FROM AUTHOR]

We reported on the interaction between poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and high-boiling-point additives in PEDOT:PSS aqueous dispersions and in the final polymer films with the aim of stablishing correlations between the structure of both inks and solid thin films. By Small-Angle X-ray Scattering (SAXS) using synchrotron radiation, it was found that the structural changes of dispersions of PEDOT:PSS with high-boiling-point additives can be explained as a two-step mechanism depending on the additive concentration. A compaction of PEDOT:PSS grains was observed at low concentrations while a swelling of the grains together with a phase segregation between PEDOT and PSS segments was evidenced at larger concentrations. Thin films' morphology and structure were investigated by atomic force microscopy (AFM) and synchrotron Grazing Incidence Wide-Angle X-ray Scattering (GIWAXS) respectively. Our two-step model provides an explanation for the small and sharp domains of PEDOT:PSS thin films observed for low-additive concentrations (first step) and larger domains and roughness found for higher-additive concentrations (second step). A reduction of the ratio of PSS in PEDOT:PSS thin films upon the presence of additives was also observed. This can be related to a thinning of the PSS shells of PEDOT:PSS grains in the dispersion. The results discussed in this work provide the basis for a controlled tuning of PEDOT:PSS thin films structure and the subsequent electrical properties. [ABSTRACT FROM AUTHOR]