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Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2\pi$ = 58 MHz, charge decoherence rate $\gamma_c/2\pi$ = 36 MHz, and cavity decay rate $\kappa/2\pi$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons.

We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-crossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunnel coupling. We find that this method reduces the dephasing effect of charge noise by more than a factor of five in comparison to operation near a charge-state anti-crossing, increasing the number of observable exchange oscillations in our qubit by a similar factor. Performance also improves with exchange rate, favoring fast quantum operations., Comment: 10 pages, 8 figures

We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper well remains empty under the free surface. A small air-bridged gate contacts the surface, and is positively biased to draw laterally confined electrons into the upper well. Electrons tunneling between this accumulation-mode dot and the lower well are detected using a quantum point contact (QPC), located slightly offset from the dot gate. The charge state of the dot is measured by monitoring the differential transconductance of the QPC near pinch-off. Addition spectra starting with N=0 were observed as a function of gate voltage. DC sensitivity to single electrons was determined to be as high as 8.6%, resulting in a signal-to-noise ratio of ~9:1 with an equivalent noise bandwidth of 12.1 kHz. Analysis of random telegraph signals associated with the zero to one electron transition allowed a measurement of the lifetimes for the filled and empty states of the one-electron dot: 0.38 ms and 0.22 ms, respectively, for a device with a 10 nm AlInAs tunnel barrier between the two wells., Comment: 3 pages, 3 figures

We study the late stages of spinodal decomposition in a Ginzburg-Landau mean field model with quenched disorder. Random spatial dependence in the coupling constants is introduced to model the quenched disorder. The effect of the disorder on the scaling of the structure factor and on the domain growth is investigated in both the zero temperature limit and at finite temperature. In particular, we find that at zero temperature the domain size, $R(t)$, scales with the amplitude, $A$, of the quenched disorder as $R(t) = A^{-\beta} f(t/A^{-\gamma})$ with $\beta \simeq 1.0$ and $\gamma \simeq 3.0$ in two dimensions. We show that $\beta/\gamma = \alpha$, where $\alpha$ is the Lifshitz-Slyosov exponent. At finite temperature, this simple scaling is not observed and we suggest that the scaling also depends on temperature and $A$. We discuss these results in the context of Monte Carlo and cell dynamical models for phase separation in systems with quenched disorder, and propose that in a Monte Carlo simulation the concentration of impurities, $c$, is related to $A$ by $A \sim c^{1/d}$., Comment: RevTex manuscript 5 pages and 5 figures (obtained upon request via email sth@iris.bu.edu)