1. Epitaxial growth of Ge1–xSnx films with x up to 0.14 grown on Ge (00l) at low temperature.
- Author
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Ping Tao, Lei Huang, H, Cheng H, Huan-Hua Wang, and Xiao-Shan Wu
- Subjects
EPITAXY ,LOW temperature physics ,X-ray diffraction ,RAMAN effect ,POISSON'S ratio ,STRAINS & stresses (Mechanics) - Abstract
We characterize the structures of Ge
1–x Snx films with x up to 0.14 grown on Ge (00l) by molecular-beam epitaxy at low temperature. The results show that Ge1–x Snx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge—Ge, Ge—Sn, Sn—Sn vibrational modes. The Sn—Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films. [ABSTRACT FROM AUTHOR]- Published
- 2014
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