1. Electronic energy levels and electrochemical properties of co-electrodeposited CdSe thin films
- Author
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H. Bayramoglu, Ahmet Peksoz, Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Bayramoğlu, Hüsnü, Peksöz, Ahmet, and AAG-9772-2021
- Subjects
Annealing (metallurgy) ,Cadmium selenide ,Refractive index ,Semiconductor thin films ,Growth ,02 engineering and technology ,Electrolyte ,Engineering, electrical & electronic ,01 natural sciences ,Selenium compounds ,Annealing ,Semiconducting selenium compounds ,Electrolytes ,Engineering ,Semiconducting indium ,Physics, condensed matter ,General Materials Science ,Vapor-deposition ,Spectroscopy ,Physics, applied ,010302 applied physics ,N-type semiconductor ,Physics ,Tin oxides ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Chlorine compounds ,Energy gap ,Materials science, multidisciplinary ,Dielectric spectroscopy ,Indium tin oxide ,Solutions ,Molecular-beam epitaxy ,Bismuth Sulfides ,Optical Properties ,Optical Band Gaps ,Mechanics of Materials ,Photoelectrochemical properties ,Carrier concentration ,Ito glass ,0210 nano-technology ,Electrochemical impedance spectroscopy ,Spray-pyrolysis ,Polycrystalline structure ,Materials science ,X ray diffraction ,Band gap ,Thin films ,Cadmium selenides ,Electrochemical deposition ,Electrodeposition ,Mott-Schottky ,Optical-properties ,Indium compounds ,0103 physical sciences ,Thin film ,Electrical-properties ,Electrodes ,Reduction ,Substrates ,Coated glass substrates ,business.industry ,Crystal structure ,Mechanical Engineering ,II-VI semiconductors ,Lithium compounds ,Electronic energy levels ,Thin film circuits ,Cadmium chloride ,Nanostructures ,Electrochemical deposition methods ,Semiconductor ,Chemical engineering ,Crystallite ,business - Abstract
CdSe semiconductor thin films were grown on indium tin oxide (ITO) coated glass substrates by co-electrochemical deposition method. Deposition potential was kept at - 0.95 V vs. Ag/AgCl reference electrode for ten minutes. Deposition electrolyte includes an aqueous solution of 10 mM CdCl2, 20 mM H(2)SeO(3 )as precursors, 200 mM LiCl as complexing agent, and HCl for adjusting of pH. Deposited CdSe thin film was annealed at 500 degrees C for 30 min in air medium. Precursor and annealed CdSe thin films were characterized using a number of techniques, including SEM, EDX, XRD, UV-vis spectroscopy, and electrochemical impedance spectroscopy. SEM studies show that annealing alters the surface of precursor CdSe film from smooth to granular appearance. According to EDX analyses, the ratio of Cd/Se is close to 1.07 and 1.04 for the precursor and annealed CdSe thin film, respectively. XRD analysis shows that each film has polycrystalline structure. Precursor film has only cubic structure of CdSe, while annealed film has hexagonal structure of CdSe and cubic crystal phase of CdO. Optical energy band gap of the as-deposited CdSe film increases from 1.64 to 1.71 eV after annealing due to the mixture of the two phases. Refractive index against wavelength changes between 2.0 and 3.3. Calculations performed by using the data of Mott-Schottky measurements show that precursor CdSe film has 1.72 x 10(16 )cm(-3), while annealed film is of 3.65 x 10(17 )cm(-3 )carrier concentration. The prepared films exhibit n-type semiconductor character. The study reports energy level diagrams of the produced semiconductor CdSe thin films by using the Mott-Schottky and Tauc's approximations. The carrier transport properties in the interface between active CdSe thin film and electrolyte are discussed based on an equivalent electronic circuit simulated to the Nyquist data of the CdSe/electrolyte system.
- Published
- 2019
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