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Sol–gel‐based solution‐processed metal oxides have emerged as a key fabrication method for applications in thin film transistors both as a semiconducting and a dielectric layer. Here, a low‐temperature, green solvent‐based, non‐toxic, and cost‐effective solution shearing approach for the fabrication of thin aluminum oxide (AlOx) dielectrics is reported. Optimization of sustainability aspects like energy demand, and selection of chemicals used allows to reduce the environmental impact of the life cycle of the resulting product already in the design phase. Using this approach, ultra‐thin, device‐grade AlOx films of 7 nm are coated—the thinnest films to be reported for any solution‐fabrication method. The metal oxide formation is achieved by both thermal annealing and deep ultra‐violet (UV) light exposure techniques, resulting in capacitances of 750 and 600 nF cm−2, respectively. The structural analysis using microscopy and x‐ray spectroscopy techniques confirmed the formation of smooth, ultra‐thin AlOx films. These thin films are employed in organic field‐effect transistors (OFETs) resulting in stable, low hysteresis devices leading to high mobilities (6.1 ± 0.9 cm2 V−1 s−1), near zero threshold voltage (−0.14 ± 0.07 V) and a low subthreshold swing (96 ± 16 mV dec−1), enabling device operation at only ±0.5 V with a good Ion/Ioff ratio (3.7 × 105). [ABSTRACT FROM AUTHOR]

Here, the effect of thermal annealing (TA) on the stability of solution‐sheared thin films of the semiconducting polymer poly[2,5‐bis(2‐octyldodecyl)pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione‐3,6‐diyl)‐alt‐(2,2′;5′,2′';5′',2′"‐quaterthiophen‐5,5′"‐diyl)] (PDPP4T) against the original coating solvent is studied, and it is shown that TA significantly improves the solvent resistance of semiconducting polymer films. Specifically, after the thin films are annealed at or above a critical temperature, the thin film thickness is largely retained when exposed to the original solvent, while for lower annealing temperatures material loss occurs, i.e., the thin film thickness is reduced due to rapid dissolution. The results of various techniques including grazing‐incidence wide‐angle x‐ray scattering (GIWAXS), atomic force microscopy (AFM), and ultraviolet‐visible‐near infrared (UV–vis‐NIR) absorption spectroscopy suggest physical changes as the cause for the increased solvent resistance. Such annealed films also show stable electrical characteristics in bottom‐gate, top‐contact (BGTC) organic field‐effect transistors (OFETs) even after solvent exposure. In initial tests, a multitude of technologically relevant polymers show such behavior, underlining the potential impact of such temperature treatments for the fabrication of multi‐layer polymer devices. [ABSTRACT FROM AUTHOR]

Conjugated polymers often show efficient charge carrier transport along their backbone which is a primary factor in the electrical behavior of Organic Field Effect Transistor (OFETs) devices fabricated from these materials. Herein, a solution shearing procedure is reported to fabricate micro/nano wires from a diketopyrrolopyrrole (DPP)‐based polymer. Millimeter to nanometer long polymer wires orientated in the coating direction are developed after a thorough analysis of the deposition conditions. It shows several morphological regimes—film, transition, and wires and experimentally derive a phase diagram for the parameters coating speed and surface energy of the substrate. The as‐fabricated wires are isolated, which is confirmed by optical, atomic force, and scanning electron microscopy. Beside the macroscopic alignment of wires, cross‐polarized optical microscopy images show strong birefringence suggesting a high degree of molecular orientation. This is further substantiated by polarized UV‐Vis‐NIR spectroscopy, selected area electron diffraction transmission electron microscopy, and grazing‐incidence wide‐angle X‐ray scattering. Finally, an enhanced electrical performance of single wire OFETs is observed with a 15‐fold increase in effective charge carrier mobility to 1.57 cm2 V−1 s−1 over devices using films (0.1 cm2 V−1 s−1) with similar values for on/off current ratio and threshold voltage. [ABSTRACT FROM AUTHOR]

Synthetic insecticides are widely used against plant pest insects to protect the crops. However, many insecticides have poor selectivity and are toxic also to beneficial insects, animals, and humans. In addition, insecticide residues can remain on fruits for many days, jeopardizing food safety. For these reasons, a reusable, low‐cost electronic trap that can attract, detect, and identify, but attack only the pest while leaving beneficial insects unharmed could provide a sustainable, nature‐friendly replacement. Here, for the first time, research results are presented suggesting the great potential and compatibility of organic electronic devices and technologies with pest management. Electrical characterizations confirm that an insect's body has relatively high dielectric permittivity. Adaptive memcapacitor circuits can track the impedance change for insect detection. Other experiments show that printed polymer piezoelectric transducers on a plastic substrate can collect information about the weight and activity of insects for identification. The breakdown voltage of most insects´ integument is measured to be <200 V. Long channel organic transistors easily work at such high voltages while being safe to touch for humans thanks to their inherent low current. This feasibility study paves the way for the future development of organic electronics for physical pest control and biodiversity protection. [ABSTRACT FROM AUTHOR]

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco‐friendly, streamlined method for preparing thin‐film transistors (TFTs) via a pure water‐solution blade‐coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple‐coated indium oxide thin‐film transistors (3C‐TFTs) and indium oxide/zinc oxide/indium oxide thin‐film transistors (IZI‐TFTs) on a 300 nm SiO2 gate dielectric at 300 °C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm2 V−1 s−1, respectively. The devices show an excellent on/off ratio (>106), and a threshold voltage close to 0 V when measured in air. Flexible MO‐TFTs on polyimide substrates with AlOx dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm2 V−1 s−1 at low operating voltage. When using a longer post‐coating annealing period of 20 min, high‐performance 3C‐TFTs (over 18 cm2 V−1 s−1) and IZI‐TFTs (over 38 cm2 V−1 s−1) using MO semiconductor layers annealed at 300 °C are achieved. [ABSTRACT FROM AUTHOR]