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Ultrashort laser pulses pose unique tools to trigger and probe the fastest charge dynamics in matter, allowing the investigation of fundamental physical phenomena with unprecedented resolution in space, time, and energy. One of the most fascinating opportunities that ultrashort pulses offer is the possibility of modulating and investigating symmetries by tailoring the properties of the laser beam in the spatial and polarization domains, effectively controlling symmetry breaking on multiple levels. In particular, this allows probing chiral matter and ultrafast chiral dynamics. In recent years, the development of highly sensitive approaches for studying chirality has been a hot topic in physics and chemistry that has developed largely separately from the field of tailored light. This perspective discusses the individual and joint evolution of these fields with an emphasis on how the fields have already cross-fertilized, opening new opportunities in science. We outline a future outlook of how the topics are expected to fully merge and mutually evolve, emphasizing outstanding open issues.

Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused on explaining the effect using various kinetic mechanisms, however, frequencies without a closed electron orbit have been observed in equilibrium and so a kinetic mechanism cannot be the entire story. In this work we develop a theory which explains these frequencies in equilibrium and can thus be used to understand measurements of both Shubnikov-de Haas and de Haas-van Alphen oscillations. We show, analytically, that these frequencies arise due to multi-electron correlations. We then extend our theory to explain a recent experiment on artificial crystals in GaAs two-dimensional electron gases, which revealed for the first time magnetic oscillations having frequencies that are half of those previously observed. We show that the half-frequencies arise in equilibrium from single-particle dynamics with account of impurities. Our analytic results are reinforced by exact numerics, which we also use clarify prior works on the kinetic regime., Comment: 15 pages, 10 figures

Following up on a recent paper [Bharti et al., Phys. Rev. A 109 (2024) 023110], we compare the predictions from severalR-matrix with time-dependence calculations for a modified three-sideband version of the "reconstruction of attosecond beating by interference of two-photon transitions" (RABBITT) configuration applied to helium. Except for the special case of the threshold sideband, which appears to be very sensitive to the details of coupling to the bound Rydberg states, increasing the number of coupled states in the close-coupling expansion used to describe the ejected-electron--residual-ion interaction hardly changes the results. Consequently, the remaining discrepancies between the experimental data and the theoretical predictions are likely due to uncertainties in the experimental parameters, particularly the detailed knowledge of the laser pulse.

In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tuneable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs bandstructure and Fermi surface to a new bandstructure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic potential modulation magnetotransport measurements reveal quantum oscillations from the GaAs two-dimensional Fermi surface, and classical oscillations due to these electrons scattering from the artificial lattice. Increasing the strength of the modulation reveals new quantum oscillations due to the formation of multiple artificial Fermi surfaces, and ultimately to new classical oscillations of the electrons from the artificial Fermi surface scattering from the superlattice modulation. These results show that low disorder gate-tuneable lateral superlattices can be used to form artificial two dimensional crystals with designer electronic properties., Comment: 19 pages, 6 figures

We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise this device design using low-temperature magneto-transport measurements and show that the fabrication process caused minimal damage to the system. We demonstrate the tuning of potential modulation from weak (much smaller than Fermi energy) to strong (larger than the Fermi energy) regimes., Comment: 4 pages, 3 figures

The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hopping that drive collective phenomena in real crystals. Solid state approaches support long range hopping and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states., Comment: 30 pages, 11 figures

In an extended superconductor-topological insulator-superconductor (S-TI-S) Josephson junction in a magnetic field, localized Majorana bound states (MBS) are predicted to exist at the cores of Josephson vortices where the local phase difference across the junction is an odd-multiple of $\pi$. These states contribute a supercurrent with a $4\pi$-periodic current-phase relation (CPR) that adds to the conventional $2\pi$-periodic sinusoidal CPR. In this work, we present a comprehensive experimental study of the critical current vs. applied magnetic field diffraction patterns of lateral Nb-Bi$_2$Se$_3$-Nb Josephson junctions. We compare our observations to a model of the Josephson dynamics in the S-TI-S junction system to explore what feature of MBS are, or are not, exhibited in these junctions. Consistent with the model, we find several distinct deviations from a Fraunhofer diffraction pattern that is expected for a uniform sin$({\phi})$ CPR. In particular, we observe abrupt changes in the diffraction pattern at applied magnetic fields in which the current-carrying localized MBS are expected to enter the junction, and a lifting of the odd-numbered nodes consistent with a $4\pi$-periodic sin$(\phi/2)$-component in the CPR. We also see that although the even-numbered nodes often remain fully-formed, we sometimes see deviations that are consistent with quasiparticle-induced fluctuations in the parity of the MBS pairs that encodes quantum information.

We report a detailed study of high-order harmonic generation (HHG) in helium. When comparing predictions from a single-active-electron model with those from all-electron simulations, such as ATTOMESA and R-matrix with time-dependence, which can include different numbers of states in the close-coupling expansion, it seems imperative to generate absolute numbers for the HHG spectrum in a well-defined framework. While qualitative agreement in the overall frequency dependence of the spectrum, including the cut-off frequency predicted by a semi-classical model, can be achieved by many models in arbitrary units, only absolute numbers can be used for benchmark comparisons between different approaches.

Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 us using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.

Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k $\neq$ -k). Here, we show that transverse magnetic focussing can be used to detect such changes, because focussing only measures a well defined section of the Fermi surface and does not average over +k and -k. Furthermore, our results show that focussing is an order of magnitude more sensitive to changes in the Fermi surface than other 2D techniques, and could be used to investigate similar Fermi surface changes in other 2D systems.

Silicon hole quantum dots have been the subject of considerable attention thanks to their strong spin-orbit coupling enabling electrical control. The physics of silicon holes is qualitatively different from germanium holes and requires a separate theoretical description. In this work, we theoretically study the electrical control and coherence properties of silicon hole dots with different magnetic field orientations. We discuss possible experimental configurations to optimize the electric dipole spin resonance (EDSR) Rabi time, the phonon relaxation time, and the dephasing due to random telegraph noise. Our main findings are: (i) The in-plane $g$-factor is strongly influenced by the presence of the split-off band, as well as by any shear strain. The $g$-factor is a non-monotonic function of the top gate electric field, in agreement with recent experiments. This enables coherence sweet spots at specific values of the top gate field and specific magnetic field orientations. (ii) Even a small ellipticity (aspect ratios $\sim 1.2$) causes significant anisotropy in the in-plane $g$-factor, which can vary by $50\% - 100\%$ as the magnetic field is rotated in the plane. (iii) EDSR Rabi frequencies are comparable to Ge, and the ratio between the relaxation time and the EDSR Rabi time $\sim 10^5$. For an out-of-plane magnetic field the EDSR Rabi frequency is anisotropic with respect to the orientation of the driving electric field, varying by $\approx 20\%$ as the driving field is rotated in the plane. Our work aims to stimulate experiments by providing guidelines on optimizing configurations and geometries to achieve robust, fast and long-lived hole spin qubits in silicon., Comment: 22 Pages, 11 figures

Following up on a previous paper on two-color photoionization of Ar(3p) [Bharti et al., Phys. Rev. A 103 (2021) 022834], we present measurements and calculations for a modified three-sideband (3-SB) version of the "reconstruction of attosecond beating by interference of two-photon transitions" (RABBITT) configuration applied to He(1s). The 3-SB RABBITT approach allows us to explore interference effects between pathways involving different orders of transitions within the continuum. The relative differences in the retrieved oscillation phases of the three sidebands provide insights into the continuum-continuum transitions. The ground state of helium has zero orbital angular momentum, which simplifies the analysis of oscillation phases and their angle-dependence within the three sidebands. We find qualitative agreement between our experimental results and the theoretical predictions for many cases but also observe some significant quantitative discrepancies., Comment: 9 pages, 6 figures

In this work we present a comprehensive theory of spin physics in planar Ge hole quantum dots in an in-plane magnetic field, where the orbital terms play a dominant role in qubit physics, and provide a brief comparison with experimental measurements of the angular dependence of electrically driven spin resonance. We focus the theoretical analysis on electrical spin operation, phonon-induced relaxation, and the existence of coherence sweet spots. We find that the choice of magnetic field orientation makes a substantial difference for the properties of hole spin qubits. Furthermore, although the Schrieffer-Wolff approximation can describe electron dipole spin resonance (EDSR), it does not capture the fundamental spin dynamics underlying qubit coherence. Specifically, we find that: (i) EDSR for in-plane magnetic fields varies non-linearly with the field strength and weaker than for perpendicular magnetic fields; (ii) The EDSR Rabi frequency is maximized when the a.c. electric field is aligned parallel to the magnetic field, and vanishes when the two are perpendicular; (iii) The Rabi ratio $T_1/T_\pi$, i.e. the number of EDSR gate operation per unit relaxation time, is expected to be as large as $5{\times}10^5$ at the magnetic fields used experimentally; (iv) The orbital magnetic field terms make the in-plane $g$-factor strongly anisotropic in a squeezed dot, in excellent agreement with experimental measurements; (v) The coherence sweet spots do not exist in an in-plane magnetic field, as the orbital magnetic field terms expose the qubit to all components of the defect electric field. These findings will provide a guideline for experiments to design ultrafast, highly coherent hole spin qubits in Ge.

Flare frequency distributions represent a key approach to addressing one of the largest problems in solar and stellar physics: determining the mechanism that counter-intuitively heats coronae to temperatures that are orders of magnitude hotter than the corresponding photospheres. It is widely accepted that the magnetic field is responsible for the heating, but there are two competing mechanisms that could explain it: nanoflares or Alfv\'en waves. To date, neither can be directly observed. Nanoflares are, by definition, extremely small, but their aggregate energy release could represent a substantial heating mechanism, presuming they are sufficiently abundant. One way to test this presumption is via the flare frequency distribution, which describes how often flares of various energies occur. If the slope of the power law fitting the flare frequency distribution is above a critical threshold, $\alpha=2$ as established in prior literature, then there should be a sufficient abundance of nanoflares to explain coronal heating. We performed $>$600 case studies of solar flares, made possible by an unprecedented number of data analysts via three semesters of an undergraduate physics laboratory course. This allowed us to include two crucial, but nontrivial, analysis methods: pre-flare baseline subtraction and computation of the flare energy, which requires determining flare start and stop times. We aggregated the results of these analyses into a statistical study to determine that $\alpha = 1.63 \pm 0.03$. This is below the critical threshold, suggesting that Alfv\'en waves are an important driver of coronal heating., Comment: 1,002 authors, 14 pages, 4 figures, 3 tables, published by The Astrophysical Journal on 2023-05-09, volume 948, page 71

Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance (EDSR). We achieve smooth control of the inter-dot coupling rate over two orders of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet-triplet relaxation time of 11 {\mu}s for a known hole occupation. These results provide a path towards improving the quality and controllability of hole spin-qubits.

We report a joint experimental and theoretical study of a three-sideband (3-SB) modification of the "reconstruction of attosecond beating by interference of two-photon transitions" (RABBIT) setup. The 3-SB RABBIT scheme makes it possible to investigate phases resulting from interference between transitions of different orders in the continuum. Furthermore, the strength of this method is its ability to focus on the atomic phases only, independent of a chirp in the harmonics, by comparing the RABBIT phases extracted from specific SB groups formed by two adjacent harmonics. We verify earlier predictions that the phases and the corresponding time delays in the three SBs extracted from angle-integrated measurements become similar with increasing photon electron energy. A variation in the angle dependence of the RABBIT phases in the three SBs results from the distinct Wigner and continuum-continuum coupling phases associated with the individual angular momentum channels. A qualitative explanation of this dependence is attempted by invoking a propensity rule. Comparison between the experimental data and predictions from an R-matrix (close-coupling) with time dependence calculation shows qualitative agreement in the observed trends., Comment: 8 pages, 5 figures

In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally associated with a change in the spin polarisation. We instead show that in hole systems with a $k^3$ spin-orbit interaction, this peak suppression is due to a change in the scattering of one spin state, not a change in spin polarisation. We also show that the change in scattering length extracted from magnetic focussing is consistent with results obtained from measurements of Shubnikov-de Haas oscillations. This result suggests that scattering must be considered when relating focussing peak amplitude to spin polarisation in hole systems

The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-Si alloy along the entire length of the predefined nanowire device over micron length scales at temperatures well below that of the Al-Si eutectic. The resultant transformed nanowire structures are layered in geometry with a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and a residual Si cap sitting on top of the wire. The phase transformed material is conformal with any predefined device patterns and the resultant structures are exceptionally smooth-walled compared to similar nanowire devices formed by silicidation processes. The superconducting properties of a mesoscopic AlSi ring formed on a SOI platform are investigated. Low temperature magnetoresistance oscillations, quantized in units of the fluxoid, h/2e, are observed., Comment: 11 pages, 9 figures

1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia

The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocalization (WAL) was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics.

A supersolid, a counter-intuitive quantum state in which a rigid lattice of particles flows without resistance, has to date not been unambiguously realised. Here we reveal a supersolid ground state of excitons in a double-layer semiconductor heterostructure over a wide range of layer separations outside the focus of recent experiments. This supersolid conforms to the original Chester supersolid with one exciton per supersolid site, as distinct from the alternative version reported in cold-atom systems of a periodic modulation of the superfluid density. We provide the phase diagram augmented by the supersolid. This new phase appears at layer separations much smaller than the predicted exciton normal solid, and it persists up to a solid--solid transition where the quantum phase coherence collapses. The ranges of layer separations and exciton densities in our phase diagram are well within reach of the current experimental capabilities.

Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term allows the spatial separation of spins to be changed in-situ using a voltage applied to an overall top gate. Here we demonstrate that this can be used to control the splitting of the magnetic focussing peaks. Additionally, we compare the focussing peak splitting to that predicted by Shubnikov-de Haas oscillations and k.p bandstructure calculations. We find that the focussing peak splitting is consistently larger than expected, suggesting further work is needed on understanding spin dependent magnetic focussing.

We design, fabricate, and study a hole bilayer in a strained germanium double quantum well. Magnetotransport characterisation of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34$\times$10$^5$ cm$^2$/Vs and a low percolation density of 2.38$\times$10$^{10}$ cm$^{-2}$. We resolve the individual population of the channels from the interference patterns of the Landau fan diagram. At a density of 2.0$\times$10$^{11}$ cm$^{-2}$ the system is in resonance and we observe an anti-crossing of the first two bilayer subbands characterized by a symmetric-antisymmetric gap of $\sim$0.69 meV, in agreement with Schr\"odinger-Poisson simulations.

We demonstrate that a lightly-strained germanium channel ($\varepsilon_{//}$ = -0.41%) in an undoped Ge/Si$_{0.1}$Ge$_{0.9}$ heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1$\times$10$^{6}$ cm$^{2}$/Vs and percolation density less than 5$\times$10$^{10}$ cm$^{-2}$. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density and low magnetic field. The low-disorder and small effective mass (0.068$m_e$) defines lightly-strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.

In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlapping in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices., Comment: 14 pages, 6 figures

Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion of a viscous `electron fluid'. The fluid viscosity is an intrinsic property of the electron system, determined solely by the electron-electron interactions. Resolving the universal intrinsic viscosity is challenging, as it only affects the resistance through interactions with the sample boundaries, whose roughness is not only unknown but also varies from device to device. Here we eliminate all unknown parameters by fabricating samples with smooth sidewalls to achieve the perfect slip boundary condition, which has been elusive both in molecular fluids and electronic systems. We engineer the device geometry to create viscous dissipation and reveal the true intrinsic hydrodynamic properties of a 2D system. We observe a clear transition from ballistic to hydrodynamic electron motion, driven by both temperature and magnetic field. We directly measure the viscosity and electron-electron scattering lifetime (the Fermi quasiparticle lifetime) over a wide temperature range without fitting parameters, and show they have a strong dependence on electron density that cannot be explained by conventional theories based on the Random Phase Approximation.