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An experimental survey of the electrical behavior of an abrupt isolation-induced corner parasitic transistor reveals its low sensitivity to short channel and substrate bias effects. Simulations show the close relationship between the transistor and the active area/isolation transition profile. An investigation of the substrate bias, transistor length and width dependence of the corner effect demonstrates the need to control the technological parameters linked to the isolation process. The results are important for proper integration of future isolation technologies.

Objective: The aim of the present study was to analyze the success rates of frozen and fresh embryo transfer methods in different patient groups. Material and methods: The study included 453 patients who underwent in vitro fertilization (IVF) treatment. The patients were further divided into three groups as male factor, tubal/ovarian/uterine factor, and other factors. IVF treatment was performed through either fresh or frozen embryo transfer (FET). Of the 453 patients, 298 had fresh embryo transfer, and 155 received FET. The implantation and live-birth rates of FET were compared with fresh transfer approach, focusing on the effects of male infertility. Results: There was a significant difference between the pregnancy ratios of patients who underwent fresh embryo transfer versus patients who underwent FET. In patients who were receiving IVF treatment due to male factors, the pregnancy rate was 49.32% in the fresh embryo transfer group, whereas it was 69.70% in the FET group, revealing a significant difference between the two groups (p=0.0321). Although the live-birth ratios were higher in the FET group both among all patients who underwent IVF due to male factor, the differences between the groups were not statistically significant. Conclusion: We observed higher pregnancy rates in FET patients compared with fresh embryo transfer in the study group. The differences in pregnancy rates and live-birth rates were especially evident in IVF cases where male factor was the reason for the treatment. [ABSTRACT FROM AUTHOR]

Deals with a study which presented an interpretation of the electrical behavior of polycrystalline semiconductors which takes into account intergranular fluctuations in potential. Suspicion made on intergranular doping concentration fluctuations; Result that can occur in many defects induced in ion-implanted silicon; Source of all the macroscopic inhomogenities.

Reports on the interpretation of thermoelectric power in silicon-on-sapphire films by means of a long-range potential-fluctuation model. Overview of the long-range fluctuation model; Nature of thermoelectric power; Representation of potential valleys as an electrical network.

Presents a study which examined current-voltage characteristics of polycrystalline silicon films doped with phosphorus and boron over a wide range of temperatures and applied electric fields. Increase in dc current versus applied voltage; Discussion on electric field-induced transitions; Effect of electric field on trap occupancy.