Search

In this study, a new theoretical calculation of metal-mode-filtered vertical-cavity surface-emitting laser (MMF-VCSEL) is proposed. The optimized number of P-DBR and the metal layer thickness are used. The effects of the metal mode filtered structure on the threshold gain of different transverse modes is analyzed. The MMF-VCSEL can operate in fundamental transverse mode under 8 μm oxide aperture compared with the conventional oxide-confined VCSEL. Benefit from the large oxide aperture and small metal aperture, the current crowding effect is effectively avoided and the heat distribution inside the VCSEL is improved.

Dual-wavelength output devices have a wide range of applications in mid-infrared band difference frequency generation, anti-interference lidar, dual-wavelength holographic interferometry, and other applications. Vertical external cavity surface-emitting lasers (VECSELs) are a type of semiconductor laser that can achieve single-chip dual-wavelength output by designing the chip structure. In this paper, we present a single-chip VECSEL that can switch between dual-wavelength and single-wavelength output modes. The VECSEL can simultaneously emit coaxial laser beams at 967 nm and 1013 nm, with a wavelength spacing of about 45 nm. The degree of mismatch between the gain peaks of the two quantum wells in the gain chip and the corresponding cavity modes is different. By adjusting the pump power, the temperature of the active region can be changed, which alters the matching relationship between the gain peaks and the cavity modes and controls the output mode of the VECSEL. The dual-wavelength output mode maintains a stable wavelength spacing at different operating temperatures. The laser output mode can be switched between single-wavelength and dual-wavelength, and the beam divergence angle is less than 8°. The dual-wavelength output power can exceed 400 mW, and the long-wavelength output power can reach up to 700 mW.