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We report the discovery of a new superconductor from phase change materials SnSb2Te4. Single crystals of SnSb2Te4 were grown using a conventional melting-growth method. The sample resistance under pressure was measured using an originally designed diamond anvil cell with boron-doped diamond electrodes. The pressure dependence of the resistance has been measured up to 32.6 GPa. The superconducting transition of SnSb2Te4 appeared at 2.1 K(Tconset) under 8.1 GPa, which was further increased with applied pressure to a maximum onset transition temperature 7.4K under 32.6 GPa.

We have successfully synthesized the c-axis oriented YBa2Cu4O8 (Y-124) film on a SrTiO3 (1 0 0) substrate via a coprecipitation and a dip-coating method. The precipitations including Y, Ba and Cu ions were obtained using their metal nitrates solution and the aqueous solution of sodium hydroxide and oxalic acid. Superconducting transition of the synthesized film was observed at 64-70 K corresponding to bulk Y-124 in the magnetization and resistance measurement. The developed method is suitable to synthesize superconducting Y-124 films for technological applications., Comment: 7 pages, 6 figures

Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by a high-throughput first-principles calculation from an inorganic materials database named AtomWork. We focused on AgIn$_{5}$Se$_{8}$ which has high density of state near the Fermi level. AgIn$_{5}$Se$_{8}$ was successfully synthesized as single crystals using a melt and slow cooling method. The single-crystal X-ray diffraction analysis revealed the obtained crystal is high quality without deficiencies. The valence states in AgIn$_{5}$Se$_{8}$ were determined to be Ag1+, In3+ and Se2- in accordance with a formal charge by the core level X-ray photoelectron spectroscopy analysis. The electrical resistance was evaluated under high pressure using a diamond anvil cell with boron-doped diamond electrodes. Although the sample was insulator with a resistance of above 40 M{\Omega} at ambient pressure, the resistance markedly decreased with increase of the pressure, and a pressure-induced superconducting transition was discovered at 3.4 K under 52.5 GPa. The transition temperature increased up to 3.7 K under further pressure of 74.0 GPa.

We have succeeded in the synthesis of Re-doped $HgBa_{2}Ca_{n-1}Cu_{n}O_{2(n+1)+\delta}$ quickly by a sealed tube technique with a bit of CsCl flux. Powder X-ray diffraction measurement revealed that the single phases of Re-doped $HgBa_{2}CuO_{4+\delta}$ (Hg1201), $HgBa_{2}CaCu_{2}O_{6+\delta}$ (Hg1212), and $HgBa_{2}Ca_{2}Cu_{3}O_{8+\delta}$ (Hg1223) formed in 4 h. The sample grains exhibited plate-like crystals with the sizes of 20$\times$20$\times$1 $\mu m^{3}$ and the chemical compositions of Hg1201, Hg1212, and Hg1223. The superconducting transitions were observed at 25 K for Hg1201, 122 for Hg1212, and 133 K for Hg1223 in the magnetic susceptibility. These results indicate that the developed method is useful for the fabrication of Hg-based superconducting wires., Comment: 10 pages, 6 figures

Tin sulfide (SnS) was successfully synthesized in single crystals by a melt and slow-cooling method. The obtained sample was characterized by an X-ray diffraction, an energy dispersive spectrometry, and an X-ray photoelectron spectroscopy. Electrical transport properties in SnS were investigated under high pressure using a diamond anvil cell with boron-doped metallic diamond electrodes and undoped diamond insulating layer. We successfully observed an insulator to metal transition from 12.5 GPa and pressure-induced superconductivity at 5.8 K under 47.8 GPa as predicted by a theoretical calculation.

Transport properties of Ce$_{0.85}$F0.15SbS$_{2}$ and undoped CeOSbS$_{2}$ under high pressure were investigated experimentally and theoretically. Electrical resistivity measurements of the Ce$_{0.85}$F0.15SbS$_{2}$ single crystals were performed under various high pressures using a diamond anvil cell with boron-doped diamond electrodes. The samples showed the insulator to metal transition by applying high pressure up to 30-40 GPa. On the other hand, the undoped CeOSbS$_{2}$ showed almost same transport property with the F-doped sample under high pressure. The valence state analysis using X-ray photoelectron spectroscopy revealed a simple valence state of Ce3+ in Ce$_{0.85}$F0.15SbS$_{2}$ and mixed valence state between Ce3+ and Ce4+ in undoped CeOSbS$_{2}$. The valence fluctuation in Ce carried out the comparable transport nature in the both samples. A band calculation suggests that the undoped CeOSbS$_{2}$ could be metallic under high pressure of 30 GPa in accordance with the experimental results. A superior thermoelectric property of power factor in CeOSbS$_{2}$ was estimated under high pressure around 20 GPa in comparison with that of ambient pressure.

We report the pressure effect in Bi2Sr2Ca2Cu3O10+{\delta} (Bi-2223) single crystal with a small amount of intergrowth of Bi2Sr2CaCu2O8+{\delta} (Bi-2212). Their superconducting transition temperatures Tcs showed a domelike shape as a function of pressure, which showed a good agreement with the general relation between the carrier concentration and Tc. Our experimental results indicate that high pressure can induce effective carrier doping into the multilayered high-Tc cuprate superconductor, Comment: 8 pages including 5 figures

Single crystals of Nd-substituted LuBa$_2$Cu$_4$O$_8$ were successfully grown by the KOH flux method. The single phase of Lu$_{1-x}$Nd$_x$Ba$_2$Cu$_4$O$_8$ [(Lu,Nd)124] formed at $x = 0.2$. The compound crystallized as orthorhombic Ammm structure with lattice constants of a = 3.835(3) {\AA}, b = 3.879(2) {\AA} and c = 27.195(6) {\AA}. Single crystal structural analysis demonstrated that the Nd ion partially occupied the Lu site. The (Lu,Nd)124 exhibited the superconducting transition at ~75 K in the magnetic susceptibility and resistivity. The $T_c$ and the c-axis of the (Lu,Nd)124 corresponded to Tm124. These results indicate that RE124 equivalent to the one composed of single RE element is obtained by combination of two RE elements., Comment: 12 pages, 5 figures

Candidates compounds for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were exhaustively searched by the high-throughput first-principles calculation from an inorganic materials database named AtomWork. We focused on PbBi$_2$Te$_4$ which has the similar electronic band structure and the same crystal structure with those of a pressure-induced superconductor SnBi2Se4 explored by the same data-driven approach. The PbBi$_2$Te$_4$ was successfully synthesized as single crystals using a melt and slow cooling method. The core level X-ray photoelectron spectroscopy analysis revealed Pb2+, Bi3+ and Te2- valence states in PbBi$_2$Te$_4$. The thermoelectric properties of the PbBi$_2$Te$_4$ sample were measured at ambient pressure and the electrical resistivity was also evaluated under high pressure using a diamond anvil cell with boron-doped diamond electrodes. The resistivity decreased with increase of the pressure, and two pressure-induced superconducting transitions were discovered at 3.4 K under 13.3 GPa and at 8.4 K under 21.7 GPa. The data-driven approach shows promising power to accelerate the discovery of new thermoelectric and superconducting materials.

Sulfur-doped SnSe single crystal was successfully synthesized using a melt and slow-cooling method. The chemical composition and valence state of the obtained sample were analyzed by X-ray photoelectron spectroscopy. The pressure range of a diamond anvil cell with boron-doped diamond electrodes was upgraded to 104 GPa using nano-polycrystalline diamond anvil to investigate a pressure effect for the sample. Electrical resistivity measurements of sulfur-doped SnSe single crystal showed the insulator-metal-superconductor transition by applying high pressure up to 75.9 GPa.

Candidates for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were searched by the high-throughput first-principles calculation from an inorganic materials database. The synthesized SnBi$_2$Se$_4$ among the target compounds showed a narrow band gap of 354 meV, and a thermal conductivity of 1 W/Km at ambient pressure. The sample SnBi$_2$Se$_4$ showed a metal-insulator transition at 11.1 GPa, as predicted by a theoretical estimation. Furthermore, the two pressure-induced superconducting transitions were discovered at under 20.2 GPa and 47.3 GPa. The data-driven search is a promising approach to discover new functional materials.

Diamond anvil cell using boron-doped metallic diamond electrodes covered with undoped diamond insulating layer have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of high quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of FeSe single crystal was enhanced up to 43 K by applying uniaxial-like pressure.

Superconducting FeSe films were electrochemically deposited on rolling-assisted biaxially textured substrate (RABiTS) tape. We observed zero resistivity in the as-electrodeposited FeSe film prepared on the RABiTS when the appropriate voltage was applied while it was dipped into the solution. When the RABiTS tape was dipped in the solution without applying voltage, a thin Se film was deposited on the substrate. The compositional ratio of the FeSe film got closer to the stoichiometric ratio with decreasing the dipping time before applying voltage.

We found that the electronic transport property of SnSe single crystals was sensitive to oxygen content. Semiconducting SnSe single crystals were obtained by using Sn of grain form as a starting material while powder Sn resulted in metallic SnSe. X-ray photoelectron spectroscopy analysis revealed that the surfaces of raw Sn were oxidized, where the volume fraction was relatively low in grain Sn. This demonstrates that contamination of oxygen causes metallic behavior in grown SnSe single crystals., Comment: 13 pages, 3 figures

K$_x$Fe$_{2-y}$Se$_2$ exhibits an iron-vacancy ordering at $T_{\rm s} {\sim}270{\deg}$C and separates into two phases: a minor superconducting (iron-vacancy-disordered) phase and a major non-superconducting (iron-vacancy-ordered) phase. The microstructural and superconducting properties of this intermixture can be tuned by an appropriate control of the quenching process through $T_{\rm s}$. A faster quenching rate leads to a finer microstructure and a suppression of formation of the non-superconducting phase by up to 50%. Nevertheless, such a faster cooling rate does induce a monotonic reduction in the superconducting transition temperature (from 30.7 K down to 26.0 K) and, simultaneously, a decrease in the iron content within the superconducting phase such that the compositional ratio changed from K$_{0.35}$Fe$_{1.83}$Se$_2$ to K$_{0.58}$Fe$_{1.71}$Se$_2$.

Superconductivity in FeTe0.8S0.2 is successfully induced by an electrochemical reaction using an ionic liquid solution. A clear correlation between the Fe concentration in the solution and the manifestation of superconductivity was confirmed, suggesting that superconductivity was induced by the deintercalation of excess iron., Comment: 14 pages, 4 figures

Superconductivity is successfully induced by utilizing a battery-like reaction found in a typical Li-ion battery. Excess Fe in FeTe0.8S0.2 is electrochemically de-intercalated by applying a voltage in a citric acid solution. The superconducting properties improve with an increase in the applied voltage up to 1.5 V. This result suggests that an electrochemical reaction can be used as a novel method to develop new superconducting materials., Comment: 12 pages, 3 figures

We show the observation of the coexistence of bulk superconductivity and ferromagnetism in CeO1-xFxBiS2(x = 0 - 1.0) prepared by annealing under high-pressure. In CeO1-xFxBiS2 system, both superconductivity and two types of ferromagnetism with respective magnetic transition temperatures of 4.5 K and 7.5 K are induced upon systematic F substitution. This fact suggests that carriers generated by the substitution of O by F are supplied to not only the BiS2 superconducting layers but also the CeO blocking layers. Furthermore, the highest superconducting transition temperature is observed when the ferromagnetism is also enhanced, which implies that superconductivity and ferromagnetism are linked to each other in the CeO1-xFxBiS2 system., Comment: 25 pages, 6 figures

The Phase diagram of SmFeAsO1-xFx in terms of x is exhibited in this study. SmFeAsO1-xFx from x = 0 to x = 0.3 were prepared by low temperature sintering with slow cooling. The low temperature sintering suppresses the formation of the amorphous FeAs, which is inevitably produced as an impurity by using high temperature sintering. Moreover, slow cooling is effective to obtain the high fluorine concentration. The compositional change from feedstock composition is quite small after this synthesis. We can reproducibly observe a record superconducting transition for an iron based superconductor at 58.1 K. This achievement of a high superconducting transition is due to the success in a large amount of fluorine substitution. A shrinking of the a lattice parameter caused by fluorine substitution is observed and the substitutional rate of fluorine changes at x =0.16., Comment: 14 pages, 6 figures

We obtained amorphous-FeAs-free SmFeAsO1-xFx using a low temperature sintering with slow cooling. SmFeAsO1-xFx is sintered at 980 {\deg}C for 40 hours and cooled slowly down to 600 {\deg}C. The low temperature sintering suppresses the formation of amorphous FeAs, and the slow cooling introduces much fluorine into SmFeAsO1-xFx. The superconductivity of this sample appears at 57.8 K and the superconducting volume fraction reaches 96 %. To study the change of fluorine concentration during the cooling process, samples are quenched by water at 950 {\deg}C, 900 {\deg}C, 850 {\deg}C, 800 {\deg}C, 750 {\deg}C and 700 {\deg}C. It is found that fluorine is substituted not only at the maximum heating temperature but also during the cooling process. The low temperature sintering with slow cooling is very effective to obtain a homogeneous SmFeAsO1-xFx with high fluorine concentration., Comment: 17 pages, 7 figures

We report enhancement in the magnetic critical current density of indium added polycrystalline SmFeAsO1-xFx. The value of magnetic Jc is around 25 kA/cm2 at 4.2 K under self-magnetic field. Polycrystalline SmFeAsO1-xFx is mainly composed of the superconducting grains and a little of amorphous FeAs compounds. These areas randomly co-exist and amorphous areas are located between superconducting grains. Therefore, the superconducting current is prevented by the amorphous areas. In this study, it is found that indium addition to polycrystalline SmFeAsO1-xFx removes these amorphous areas and induces the bringing together the superconducting grains. It means the total contact surfaces of grains are increased. We suggest that the enhancement of the magnetic critical current density is a direct effect of the indium addition., Comment: 18 pages, 5 figures

We report the evolution of superconductivity and the phase diagram of the KxFe2-ySe2-zTez (z=0-0.6) crystals grown by a simple one-step synthesis. No structural transition is observed in any crystals, while lattice parameters exhibit a systematic expansion with Te content. The Tc exhibits a gradual decrease with increasing Te content from Tconset = 32.9 K at z = 0 to Tconset = 27.9 K at z = 0.5, followed by a sudden suppression of superconductivity at z = 0.6. Upon approaching a Te concentration of 0.6, the shielding volume fraction decreases and eventually drops to zero. Simultaneously, hump positions in r-T curve shift to lower temperatures. These results suggest that isovalent substitution of Te for Se in KxFe2-ySe2 crystals suppresses the superconductivity in this system., Comment: 10 pages, 1 table, 8 figures

We have successfully synthesized a new BiS2-based superconductor NdOBiS2 with F-doping. This compound is composed of superconducting BiS2 layers and blocking NdO layers, which indicates that the BiS2 layer is the one of the common superconducting layers like the CuO2 layer of cuprates or Fe-As layer of Fe-based superconductors. We can obtain NdO1-xFxBiS2 with bulk superconductivity by a solid-state reaction under ambient pressure. Therefore, NdO1-xFxBiS2 should be the suitable material to elucidate the mechanism of superconductivity in the BiS2-layer., Comment: 16 pages, 4 figures

We have successfully synthesized FeSe films by the electrochemical deposition in the electrolyte containing FeCl_{2}\cdot4H_{2}O, SeO_{2} and Na_{2}SO_{4}. The composition ratio of Fe and Se was controlled by the synthesis voltage and pH value. The FeSe film with the composition ratio of Fe : Se = 1 : 1 is fabricated at a voltage of -0.9 V and pH 2.1 in our electrochemical deposition. This sample has a highly crystalline tetragonal FeSe structure and exhibits a superconducting transition at 8.1 K, comparable to FeSe synthesized by other methods.

The red wine dependence of superconductivity in FeTe0.8S0.2 was investigated. Samples with a higher shielding volume fraction had a tendency to show a higher concentration of tartaric acid in red wine. We found the tartaric acid is one of the key factors to induce superconductivity in FeTe0.8S0.2., Comment: 9 pages, 4 figures

We have established a simple process that allows for the one-step synthesis of KxFe2-ySe2 single crystals, which exhibit high critical current density Jc. The post annealing and quenching technique has improved the homogeneity of as-grown crystals, resulting in full shielding of the external magnetic field. The quenched crystals show a superconducting transition at Tconset = 32.9 K and Tczero = 32.1 K. The upper critical fields \mu_{0}Hc2(0) for H//ab and H//c are estimated to be ~206 and ~50 T, respectively. The critical current densities Jc for H//ab and H//c reach as high as 1.0\times10^{5} and 3.4\times10^{4} A/cm2 at 5 K. Furthermore, Jc exhibits a high field performance and a significantly weak temperature dependence up to 5 T, suggesting strong pinning. These results demonstrate that KxFe2-ySe2 would be a promising candidate material for practical applications., Comment: 10 pages, 5 figures

Enhancements of superconducting properties were observed in FeSe wires using a quenching technique. Zero resistivity was achieved at about 10 K in quenched wires, which is about 2 K higher than that of polycrystalline FeSe bulk. Furthermore, transport Jc of quenched wires showed three times higher than that of furnace-cooled wires. In contrast, the quenched polycrystalline FeSe bulks did not show the enhancement of Tc. The quenching technique is a greatly promising for fabricating FeSe wires with high Tc and high Jc, and quenched FeSe wires have high potential for superconducting wire applications.

The superconducting FeSe films were successfully fabricated using the electrochemical synthesis. The composition ratio of Fe and Se can be controlled by the electric potential and pH value. We found that the FeSe films deposited at the electric potential -1.75 V and pH 2.3 show the superconducting transition at 3.5 K. The establishment of this electrochemical synthesis technique will provide many advantages for application., Comment: 15 pages, 6 figures