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The measured and simulated performance of a high-voltage junction-isolated lateral insulated-gate bipolar transistor (LIGBT) with a variation in lateral doping (VLD) drift region is demonstrated. Experimental and simulation results show that significant advancements in breakdown voltages (BVs) and latch-up current densities can be obtained with the help of this technology without compromising the forward voltage drop.

The experimental results of transient substrate currents that occur during clamped inductive switching of a junction-isolated lateral insulated gate bipolar transistor (LIGBT) are analyzed. The transient substrate current peak at turn off is broader and higher than the value a turn on.

The performance of a high-voltage lateral insulated gate bipolar transistors (LGBTs) with segmented n+p/n anode fabricated in junction isolation technology experimentally investigated at both room and elevated temperature. The results show that there is a significant electron current passing through the npn anode region, the magnitude of which can be controlled through the p-base charge.

Performance of multichannel lateral insulated gate bipolar transistors (MC-LIGBTs) fabricated in a cost-effective, fully implanted, CDMOS-compatible process in junction isolation technology is reported. It is shown that combining the MC and the SA-segmented N (super +)P/P(super +) [NPN] anode concepts creates a device that exhibits both low on-state and turnoff losses and is best placed for use in power IC applications.

High-voltage lateral diffused metal-oxide semiconductor (LDMOS) transistors with a variation in the lateral doping (VLD) of drift regions are examined in junction isolation technology using a fully implanted CDMOS process. Using this model, VLD fro the drift region was achieved for various drift lengths to achieve a wide range of breakdown voltages from 300 V up to 1400 V.

A study was conducted on low-pressure metalorganic vapor phase epitaxy-grown GaAs with p-type dopant dimethylzinc. Photoluminescence spectroscopy, the Hall effect and electrochemical capacitance voltage profiler were employed to examine zinc incorporation efficiency and hole carrier levels. Results show the empirical relation for band gap shrinkage and photoluminescence full width at half maximum.

This brief demonstrates the measured and simulated performance of a high-voltage junction-isolated lateral insulated-gate bipolar transistor (LIGBT) with a variation in lateral doping (VLD) drift region. Both experimental and simulation results show that significant advancements in breakdown voltages (BVs) and latch-up current densities can be obtained using this technology without compromising the forward voltage drop. The results validate that a VLD drift region can achieve the required BV with smaller drift region lengths, in comparison to conventional LIGBTs using uniform drift region technology, and that the VLD drift region technology enhances the safe operating area. [ABSTRACT FROM AUTHOR]

An ultrafast low energy loss lateral insulated gate bipolar transistor (LIGBT) with a novel segmented anode structure is demonstrated. The anode comprises of segments of p[sup +] and n[sup +]/p (n[sup +] region formed within a p-type region) along the width of the device. By simply varying the ratio of these segments the tradeoff between conduction and switching losses can be varied. Unlike an anode shorted structure this does not exhibit an undesirable snapback in its on-state characteristics. This structure is simple to realize in a CDMOS process without the need for any additional process steps. [ABSTRACT FROM AUTHOR]