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Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson circuit element with an almost perfectly $\pi$-periodic CPR, indicative of a largely dominant charge-4e supercurrent transport. Such a Josephson element was recently proposed as the basic building block of a protected superconducting qubit. Here, it is realized using a superconducting quantum interference device (SQUID) with low-inductance aluminum arms and two nominally identical JoFETs. The latter are fabricated from a SiGe/Ge/SiGe quantum-well heterostructure embedding a high-mobility two-dimensional hole gas. By carefully adjusting the JoFET gate voltages and finely tuning the magnetic flux through the SQUID close to half a flux quantum, we achieve a regime where the $\sin(2\varphi)$ component accounts for more than \SI{95}{\percent} of the total supercurrent. This result demonstrates a new promising route for the realization of superconducting qubits with enhanced coherence properties.

Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the standard Born-Oppenheimer approximation breaks down as one of its atoms can move between 6 lattice sites under optical excitation. The impact of this atomic reconfiguration on the photoluminescence properties of G centers is still largely unknown, especially in silicon-on-insulator (SOI) samples. Here, we investigate the displacement of the center-of-mass of the G center in silicon. We show that single G defects in SOI exhibit a multipolar emission and zero-phonon line fine structures with splittings up to $\sim1$ meV, both indicating a motion of the defect central atom over time. Combining polarization and spectral analysis at the single-photon level, we evidence that the reconfiguration dynamics are drastically different from the one of the unperturbed G center in bulk silicon. The SOI structure freezes the delocalization of the G defect center-of-mass and as a result, enables to isolate linearly polarized optical lines. Under above-bandgap optical excitation, the central atom of G centers in SOI behaves as if it were in a 6-slot roulette wheel, randomly alternating between localized crystal sites at each optical cycle. Comparative measurements in a bulk silicon sample and ab initio calculations highlight that strain is likely the dominant perturbation impacting the G center geometry. These results shed light on the importance of the atomic reconfiguration dynamics to understand and control the photoluminescence properties of the G center in silicon. More generally, these findings emphasize the impact of strain fluctuations inherent to SOI wafers for future quantum integrated photonics applications based on color centers in silicon.

Ultraviolet nanosecond laser annealing (UV-NLA) proves to be an important technique, particularly when tightly controlled heating and melting are necessary. In the realm of semiconductor technologies, the significance of nanosecond laser annealing (NLA) grows in tandem with the escalating intricacy of integration schemes in nano-scaled devices. Silicon-germanium alloys have been studied for decades for their compatibility with silicon devices. Indeed, they enable the manipulation of properties like strain, carrier mobilities and bandgap. In this framework, they can for instance boost the performances of p-type MOSFETs but also enable near infra-red absorption and emission for applications in photo-detection and photonics. Laser melting on such type of layers, however results, up to now, in the development of extended defects and poor control over layer morphology and homogeneity. In our study, we investigate the laser melting of ~700 nm thick relaxed silicon-germanium samples coated with SiO2 nano-arrays, observing the resulting material to maintain an unaltered lattice. We found the geometrical parameters of the silicon oxide having an impact on the thermal budget samples see, influencing melt threshold, melt depth and germanium distribution.

Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G center. However, inconsistent estimates regarding their quantum efficiency cast doubt on the correct identification of these individual emitters. Through a comparative analysis of their single-photon emission properties, we demonstrate that these single color centers are split in two distinct families of point defects. A first family consists of the genuine single G centers with a well-identified microscopic structure and whose photoluminescence has been investigated on ensemble measurements since the 60's. The remaining defects belong to a new color center, which we will refer to as G$^{\star}$ center, whose atomic configuration has yet to be determined. These results provide a safeguard against future defect misidentifications, which is crucial for further development of quantum technologies relying on G or G$^{\star}$ center quantum properties.

Controlling ultrafast material transformations with atomic precision is essential for future nanotechnology. Pulsed laser annealing (LA), inducing extremely rapid and localized phase transitions, is a powerful way to achieve this, but it requires careful optimization together with the appropriate system design. We present a multiscale LA computational framework able to simulate atom-by-atom the highly out-of-equilibrium kinetics of a material as it interacts with the laser, including effects of structural disorder. By seamlessly coupling a macroscale continuum solver to a nanoscale super-lattice Kinetic Monte Carlo code, this method overcomes the limits of state-of-the-art continuum-based tools. We exploit it to investigate nontrivial changes in composition, morphology and quality of laser-annealed SiGe alloys. Validations against experiments and phase-field simulations, as well as advanced applications to strained, defected, nanostructured and confined SiGe are presented, highlighting the importance of a multiscale atomistic-continuum approach. Current applicability and potential generalization routes are finally discussed.

Laser-induced alignment of particles and molecules was long envisioned to support three-dimensional structure determination using single-particle imaging with x-ray free-electron lasers [PRL 92, 198102 (2004)]. However, geometric alignment of isolated macromolecules has not yet been demonstrated. Using molecular modeling, we analyzed and demonstrated how the alignment of large nanorods and proteins is possible with standard laser technology, and performed a comprehensive analysis on the dependence of the degree of alignment on molecular properties and experimental details. Calculations of the polarizability anisotropy of about 150,000 proteins yielded a skew-normal distribution with a location of 1.2, which reveals that most of these proteins can be aligned using appropriate, realistic experimental parameters. Moreover, we explored the dependence of the degree of alignment on experimental parameters such as particle temperature and laser-pulse energy.

Ultraviolet nanosecond laser annealing (LA) is a powerful tool where strongly confined heating and melting are desirable. In semiconductor technologies the importance of LA increases with the increasing complexity of the proposed integration schemes. Optimizing the LA process along with the experimental design is challenging, especially when complex 3D nanostructured systems with various shapes and phases are involved. Within this context, reliable simulations of laser melting are required for optimizing the process parameters while reducing the number of experimental tests. This gives rise to a virtual Design of Experiments (DoE). $Si_{1-x}Ge_{x}$ alloys are nowadays used for their compatibility with silicon devices enabling to engineer properties such as strain, carrier mobilities and bandgap. In this work, the laser melting process of relaxed and strained $Si_{1-x}Ge_{x}$ is simulated with a finite element method / phase field approach. Particularly, we calibrated the dielectric functions of the alloy for its crystalline and liquid phase using experimental data. We highlighted the importance of reproducing the exact reflectivity of the interface between air and the material in its different aggregation states, to correctly mimic the process. We indirectly discovered intriguing features on the optical behavior of melt silicon-germanium.

We use radiances collected from space by the Infrared Atmospheric Sounder Interferometer (IASI) when looking down at ocean surfaces during the day to remotely determine the probability distribution of wave slopes. This is achieved by using about 300 channels between 3.6 and 4.0 $\mu$m and a physically-based approach which properly takes the contribution of the reflected solar radiation into account. Based on about 150 million observations, the same number of wave-slope probabilities are retrieved for wind speeds up to 15 m/s. We revisit and discuss the methodology proposed by Cox and Munk (CM) to derive their celebrated wave-slope probability distribution function (pdf) from photographs of the sun glitter. We propose an original and robust approach for accurate retrievals of the 7 parameters appearing in the Gram-Charlier representation of the pdf. Our results for the mean square slopes are fully compatible with those of CM, and with the more recent results by Br\'eon and Henriot, but our lower uncertainties enable us to point out departures from the linear wind-speed dependencies and a slight overestimation of the upwind MSS described by the linear fit of CM at moderate wind speed. Our skewness and kurtosis coefficients show clear influences of the wind speed, with a steady decrease of the former and the alongwind kurtosis coefficient being maximal at moderate wind speeds, features that CM could not point out due to the limitations of their measurements. We revisit the renormalization procedure employed by CM to obtain the complete variances from truncated pdf and show that it imposes stringent conditions on the kurtosis coefficients that allow us to determine them accurately, with wind-dependent values specific to the local sea state., Comment: 54 pages, 15 figures, 1 table

We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $\mu$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.

We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable method. By optimizing our molecular beam epitaxy (MBE) growth technique, we were able to reduce the amount of Ge within the whole resonator to obtain an absolute minimum of exactly one QD, accurately positioned by lithographic methods relative to the PhCR, and an otherwise flat, a few monolayer thin, Ge wetting layer (WL). With this method, record quality (Q) factors for QD-loaded PhCRs up to $Q\sim 10^5$ are achieved. A comparison with control PhCRs on samples containing a WL but no QDs is presented, as well as a detailed analysis of the dependence of the resonator-coupled emission on temperature, excitation intensity, and emission decay after pulsed excitation. Our findings undoubtedly confirm a single QD in the center of the resonator as a potentially novel photon source in the telecom spectral range.

Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeSn, for example - could be an alternative, provided their performance can be improved. Such progresses will come with better materials but also with the development of a profounder understanding of their optical properties. In this work, we demonstrate, using Ge microbridges with strain up to 6.6%, a powerful method for determining the population inversion gain and the material and optical losses of group IV lasers. This is made by deriving the values for the injection carrier densities and the cavity losses from the measurement of the change of the refractive index and the mode linewidth, respectively. We observe a laser threshold consistent with optical gain and material loss values obtained from a tight binding calculation. Lasing in Ge - at steady-state - is found to be limited to low temperatures in a narrow regime of tensile strain at the crossover to the direct band gap bandstructure. We explain this observation by parasitic intervalence band absorption that increases rapidly with higher injection densities and temperature. N-doping seems to reduce the material loss at low excitation but does not extend the lasing regime. We also discuss the impact of the optically inactive carriers in the L-valley on the linewidth of group IV lasers., Comment: 29 pages, 70 references, 15 figures

We present a detailed theoretical and experimental study of the rotation of the plane of polarization of light traveling through a gas of fast-spinning molecules. This effect is similar to the polarization drag phenomenon predicted by Fermi a century ago and it is a mechanical analog of the Faraday effect. In our experiments, molecules were spun up by an optical centrifuge and brought to the super-rotor state that retains its rotation for a relatively long time. Polarizability properties of fast-rotating molecules were analyzed considering the rotational Doppler effect and Coriolis forces. We used molecular dynamics simulations to account for intermolecular collisions. We found, both experimentally and theoretically, a nontrivial nonmonotonic time dependence of the polarization rotation angle. This time dependence reflects transfer of the angular momentum from rotating molecules to the macroscopic gas flow, which may lead to the birth of gas vortices. Moreover, we show that the long-term behavior of the polarization rotation is sensitive to the details of the intermolecular potential. Thus, the polarization drag effect appears as a novel diagnostic tool for the characterization of intermolecular interaction potentials and studies of collisional processes in gases., Comment: 12 pages, 10 figures

Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called W-center, with a zero-phonon line at 1.218${\mu}$m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as quantum integrated photonics, quantum communications and quantum sensing.

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources., Comment: 30 pages, 9 figures

The energy transferred via thermal radiation between two surfaces separated by nanometers distances (near-field) can be much larger than the blackbody limit. However, realizing a reconfigurable platform that utilizes this energy exchange mechanism to generate electricity in industrial and space applications on-demand, remains a challenge. The challenge lies in designing a platform that can separate two surfaces by a small and tunable gap while simultaneously maintaining a large temperature differential. Here, we present a fully integrated, reconfigurable and scalable platform operating in near-field regime that performs controlled heat extraction and energy recycling. Our platform relies on an integrated nano-electromechanical system (NEMS) that enables precise positioning of a large area thermal emitter within nanometers distances from a room-temperature germanium photodetector to form a thermo-photovoltaic (TPV) cell. We show over an order of magnitude higher power generation $\mathrm{P_{gen} \sim 1.25 \, \mu W \cdot cm^{-2}}$ from our TPV cell by tuning the gap between a hot emitter ($\mathrm{T_E \sim 880 \, K}$) and the cold photodetector ($\mathrm{T_D \sim 300 \, K}$) from $\mathrm{\sim 500 \, nm}$ to $\mathrm{\sim 100 \, nm}$. The significant enhancement in $\mathrm{P_{gen}}$ at such small distances is a clear indication of near-field heat transfer effect. Our electrostatically controlled NEMS switch consumes negligible tuning power ($\mathrm{P_{gen}/P_{NEMS} \sim 10^4}$) and relies on conventional silicon-based process technologies.

Transmission spectra of H$_2$O+CO$_2$ mixtures have been recorded, at 296, 325 and 366 K, for various pressures and mixture compositions using two experimental setups. Their analysis enables to retrieve values of the 'continuum' absorption by the CO$_2$-broadened H$_2$O line wings between 100 and 1500 cm$^{-1}$. The results are in good agreement with those, around 1300 cm$^{-1}$, of the single previous experimental study available. Comparisons are also made with direct predictions based on line-shape correction factors $\chi$ calculated, almost thirty years ago, using a quasistatic approach and an input H$_2$O-CO$_2$ intermolecular potential. They show that this model quite nicely predicts, with slightly overestimated values, the continuum over a spectral range where it varies by more than three orders of magnitude. An empirical correction is proposed, based on the experimental data, which should be useful for radiative transfer and climate studies in CO$_2$ rich planetary atmospheres., Comment: Accepted for publication in the Journal of Quantitative Spectroscopy & Radiative Transfer (JQSRT); 11 pages and 3 figures

We present an experimental study of the absorption, between 40 and 640 cm$^{-1}$, by CO$_2$, CH$_4$ and H$_2$ gases as well as by H$_2$+CO$_2$ and CH$_4$+CO$_2$ mixtures at room temperature. A Fourier transform spectrometer associated to a multi-pass cell, whose optics were adjusted to obtain a 152 m pathlength, were used to record transmission spectra at total pressures up to about 0.98 bar. These measurements provide information concerning the collision-induced absorption (CIA) bands as well as about the wing of the CO$_2$ 15 $\mu$m band. Our results for the CIAs of pure gases are, within uncertainties, in agreement with previous determinations, validating our experimental and data analysis procedures. We then consider the CIAs by H$_2$+CO$_2$ and CH$_4$+CO$_2$ and the low frequency wing of the pure CO$_2$ 15 $\mu$m band, for which there are, to our knowledge, no previous measurements. We confirm experimentally the theoretical prediction of Wordsworth et al. 2017 that the H$_2$+CO$_2$ and CH$_4$+CO$_2$ CIAs are significantly stronger in the 50-550 cm$^{-1}$ region than those of H$_2$+N$_2$ and CH$_4$+N$_2$, respectively. However, we find that the shape and the strength of these recorded CIAs differ from the aforementioned predictions. For the pure CO$_2$ line-wings, we show that both the $\chi$-factor deduced from measurements near 4 $\mu$m and a line-mixing model very well describe the observed strongly sub-Lorentzian behavior in the 500-600 cm$^{-1}$ region. These experimental results open renewed perspectives for studies of the past climate of Mars and extrasolar analogues., Comment: Accepted for publication in Icarus. 22 pages, 7 figures, 2 tables

Adding sufficient tensile strain to Ge can turn the material to a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. However, highly strained-Ge cannot be directly grown on Si due to its large lattice mismatch. In this work, we have developed a process based on Ge micro-bridge strain redistribution intentionally landed to the Si substrate. Traction arms can be then partially etched to keep only localized strained-Ge micro-blocks. Large tunable uniaxial stresses up to 4.2% strain were demonstrated bonded on Si. Our approach allows to envision integrated strained-Ge on Si platform for mid-infrared integrated optics., Comment: 9 pages, 4 figures

Mountain echoes are a well-known phenomenon, where an impulse excitation is mirrored by the rocks to generate a replica of the original stimulus, often with reverberating recurrences. For spin echoes in magnetic resonance and photon echoes in atomic and molecular systems the role of the mirror is played by a second, time delayed pulse which is able to reverse the ow of time and recreate the original event. Recently, laser-induced rotational alignment and orientation echoes were introduced for molecular gases, and discussed in terms of rotational-phase-space filamentation. Here we present, for the first time, a direct spatiotemporal analysis of various molecular alignment echoes by means of coincidence Coulomb explosion imaging. We observe hitherto unreported spatially rotated echoes, that depend on the polarization direction of the pump pulses, and find surprising imaginary echoes at negative times., Comment: 9 pages, 8 figures and supplementary information

Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mapping. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices., Comment: 28 pages, 10 figures

Recently, several femtosecond laser techniques have been developed that are capable of bringing gas molecules to extremely fast rotation in a very short time, while keeping their translational motion intact and relatively slow. We investigate collisional equilibration dynamics of this new state of molecular gases, and find that it follows a remarkable generic scenario. The route to equilibrium starts with a durable metastable 'gyroscopic stage', in the course of which the molecules maintain their fast rotation and orientation of the angular momentum through many collisions. The inhibited rotational-translational relaxation is characterized by a persistent anisotropy in the molecular angular distribution, and is manifested in the long-lasting optical birefringence, and anisotropic diffusion in the gas. After a certain induction time, the 'gyroscopic stage' is abruptly terminated by a self-accelerating explosive rotational-translational energy exchange leading the gas towards the final thermal equilibrium. We illustrate our conclusions by direct Molecular Dynamics simulation of super-rotors in several gases consisting of common linear molecules (such as N_2, O_2 and CO_2).

The report of an IUPAC Task Group, formed in 2011 on "Intensities and line shapes in high-resolution spectra of water isotopologues from experiment and theory" (Project No. 2011-022-2-100), on line profiles of isolated high-resolution rotational-vibrational transitions perturbed by neutral gas-phase molecules is presented. The well-documented inadequacies of the Voigt profile (VP), used almost universally by databases and radiative-transfer codes, to represent pressure effects and Doppler broadening in isolated vibrational-rotational and pure rotational transitions of the water molecule have resulted in the development of a variety of alternative line-profile models. These models capture more of the physics of the influence of pressure on line shapes but, in general, at the price of greater complexity. The Task Group recommends that the partially Correlated quadratic-Speed-Dependent Hard-Collision profile should be adopted as the appropriate model for high-resolution spectroscopy. For simplicity this should be called the Hartmann--Tran profile (HTP). The HTP is sophisticated enough to capture the various collisional contributions to the isolated line shape, can be computed in a straightforward and rapid manner, and reduces to simpler profiles, including the Voigt profile, under certain simplifying assumptions., Comment: Accepted for publication in Pure and Applied Chemistry