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We investigate both the ferromagnetic (FM) and antiferromagnetic (AFM) ultrafast dynamics of a strongly correlated oxide system, GdBaCo$_2$O$_{5.5}$ thin film, by time-resolved x-ray magnetic circular dichroism in reflectivity (XMCDR) and resonant magnetic x-ray diffraction (RMXD). A photo-induced AFM-FM transition characterized by an increase of the transient XMCDR beyond the unpumped value and a decay of RMXD was observed. The photon-energy dependence of the transient XMCDR and reflectivity can likely be interpreted as a concomitant photo-induced spinstate transition.

We report a series of layered superconductors, anti-ThCr$_2$Si$_2$-type $RE_2$O$_2$Bi ($RE$ = rare earth), composed of electrically conductive Bi square nets and magnetic insulating $RE_2$O$_2$ layers. The superconductivity was induced by separating Bi square nets as a result of excess oxygen incorporation, irrespective of the presence of magnetic ordering in $RE_2$O$_2$ layers. Intriguingly, the transition temperature of all $RE_2$O$_2$Bi including nonmagnetic Y$_2$O$_2$Bi was approximately scaled by the unit cell tetragonality ($c$/$a$), implying a key role of relative separation of the Bi square nets to induce the superconductivity.

ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developed multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by x-ray photoelectron spectroscopy, corresponding to the electronic configuration of [Xe]4f1. Electrical resistivity showed the nonmonotonic temperature dependence with a sharp resistivity maximum, concomitant with a magnetization kink at 10 K, suggesting antiferromagnetic transition. In addition, magnetoresistance showed a large angular-dependent magnetoresistance. These results imply that carrier transport in the Bi2- square net could be influenced by magnetic ordering in the Ce-O layer owing to its unique layered structure [Bi2-/(Ce2O2)2+], particularly in the form of epitaxial thin films., Comment: 7 pages, 4 figures

SrVO3 and SrNbO3 are perovskite-type transition-metal oxides with the same d1 electronic configuration. Although SrNbO3 (4d1) has a larger d orbital than SrVO3 (3d1), the reported electrical resistivity of SrNbO3 is much higher than that of SrVO3, probably owing to nonstoichiometry. In this paper, we grew epitaxial, high-conductivity stoichiometric SrNbO3 using pulsed laser deposition. The growth temperature strongly affected the Sr/Nb ratio and the oxygen content of the films, and we obtained stoichiometric SrNbO3 at a very narrow temperature window around 630 ${\deg}$C. The stoichiometric SrNbO3 epitaxial thin films grew coherently on KTaO3 (001) substrates with high crystallinity. The room-temperature resistivity of the stoichiometric film was $2.82 {\times} 10^{-5} {\Omega}$cm, one order of magnitude lower than the lowest reported value of SrNbO3 and comparable with that of SrVO3. We observed a T-square dependence of resistivity below $T^{\ast}$ = 180 K and non-Drude behavior in near-infrared absorption spectroscopy, attributable to the Fermi-liquid nature caused by electron correlation. Analysis of the T-square coefficient A of resistivity experimentally revealed that the 4d orbital of Nb that is larger than the 3d ones certainly contributes to the high electrical conduction of SrNbO3., Comment: 7 pages, 5 figures

The effect of Cr substitution in a SrRuO3 epitaxial thin film on SrTiO3 substrate was investigated by measuring the magnetic and transport properties and the electronic states. The ferromagnetic transition temperature of the SrRu0.9Cr0.1O3 film (166 K) was higher than that of the SrRuO3 film (147 K). Resonant photoemission spectroscopy experimentally revealed that the Cr 3dt2g orbital is hybridized with the Ru 4dt2g orbital in the SrRu0.9Cr0.1O3 film, supporting the assumption that the enhancement of the ferromagnetic transition temperature through Cr substitution stems from the widening of energy bands due to the hybridization of Cr 3dt2g and Ru 4dt2g orbitals. Furthermore, we found that the Hall resistivity of the SrRu0.9Cr0.1O3 film at low temperature is not a linear function of magnetic field in the high-field region where the out-of-plane magnetization was saturated; this result suggests that the SrRu0.9Cr0.1O3 film undergoes a structural transition at low temperature accompanied with the modulation of the Fermi surface., Comment: 15 pages, 7 figures

Ultrafast demagnetization in magnetic nanoparticles using pulsed laser has attracted considerable attention because of its potential applications in spintronics, such as data storage. In such applications, it is necessary to control magnetization using low energy laser pulses, however, this poses the problem of increasing the amount of energy from the excitation laser pulses to the spin subsystem. We take advantage of the phenomenon known as localized surface plasmon resonance (LSPR) to enhance the energy transfer from laser pulses to the spin subsystem. To induce LSPR, hybrid nanoparticles consisting of noble metal nanoparticles with LSPR absorption and magnetic metal nanoparticles are prepared using a novel method. Specifically, AgCo hybrid nanoparticles are prepared by a self assembly method using pulsed laser deposition. We performed measurements of the static Faraday and time-resolved Faraday effects using a pump probe technique on the AgCo hybrid nanoparticles with various AgCo ratios. The data suggest that the LSPR absorption and demagnetization amplitude increase with the increasing AgCo ratio. The results indicate that the amount of energy transferred from the laser pulses to the spin system of magnetic nanoparticles can increase via LSPR absorption.

The initial homoepitaxial growth of SrTiO3 on a (\surd13\times\surd13) - R33.7{\deg}SrTiO3(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical (\surd13\times\surd13) atomic structure is clearly visualized on the deposited SrTiO3 film surface as well as on the substrate. This result indicates the transfer of the topmost Ti-rich (\surd13\times\surd13) structure to the film surface and atomic-scale coherent epitaxy at the film/substrate interface. Such atomically ordered SrTiO3 substrates can be applied to the fabrication of atom-by-atom controlled oxide epitaxial films and heterostructures.