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The relationship between superconductivity and the film preparation conditions, i.e., the thickness and annealing process, in electrodeposited rhenium (Re) films is studied in order to understand the effect of grain size and impurities on the film's superconducting transition temperature, Tc. A water-in-salt electrolyte was used to mitigate embrittlement by reducing hydrogen evolution at the cathode where Re is deposited. The as-deposited films exhibit a highly disordered atomic structure and superconductivity up to a temperature of Tc > 5.8 K, consistent with that expected from amorphous films. A reduction of the critical temperature of superconductivity is found to accompany grain growth. However, for film thicknesses less than 300 nm the grain growth is inhibited. This leads to a retention of the critical temperature upon annealing these thin films. A reduction of impurities in Re films is found to accompany annealing, and significant grain growth is found to proceed rapidly at temperatures of 220 °C in inert atmospheres. The introduction of hydrogen in the annealing ambient further facilitates this grain growth. [ABSTRACT FROM AUTHOR]

Proton irradiation-induced effects on AlGaN/GaN high electron mobility transistors (HEMTs) were studied by emulating a certain space radiation environment (upstream of the earth's bow shock) using a relatively low energy (100 keV) proton beam with fluences of 1 × 1010, 1 × 1012, and 1 × 1014 protons/cm2. In order to isolate radiation-induced effects produced by the modification of the epi-layer from the effects produced by the change in the device structure (such as contacts), the epi-layers were irradiated prior to device fabrication, followed by material/device characterization. Proton irradiation-induced sub-gap traps were detected by spectroscopic photo current-voltage measurement. Raman study revealed that the proton irradiation had induced strain relaxation on the AlGaN/GaN HEMTs epi-layer. No substantial change in the crystal quality of the epi-layer was indicated by Raman and PL studies. With increasing proton fluences, increasing charge carrier density was observed, which was estimated via Raman spectroscopy and the charge-control model analysis. The magnitude and direction of the transistor threshold voltage shift were also dependent on proton fluence. Overall, degradation of transistor output characteristics of the fabricated HEMTs was observed with increasing proton fluence. However, based on the observed performance and the level of influence on material/device characteristics by 100 keV protons, it can be suggested that the AlGaN/GaN HEMTs have high endurance for exposure to relatively high fluences of the low-energy proton beam. [ABSTRACT FROM AUTHOR]