1. Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
- Author
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Yang, Lingming, Majumdar, Kausik, Liu, Han, Du, Yuchen, Wu, Heng, Hatzistergos, Michael, Hung, P. Y., Tieckelmann, Robert, Tsai, Wilman, Hobbs, Chris, and Ye, Peide D.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact resistance (Rc) in the few-layer WS2 and MoS2. After doping, the Rc of WS2 and MoS2 have been decreased to 0.7 kohm*um and 0.5 kohm*um, respectively. The significant reduction of the Rc is attributed to the achieved high electron doping density thus significant reduction of Schottky barrier width. As a proof-ofconcept, high-performance few-layer WS2 field-effect transistors (FETs) are demonstrated, exhibiting a high drain current of 380 uA/um, an on/off ratio of 4*106, and a peak field-effect mobility of 60 cm2/V*s. This doping technique provides a highly viable route to diminish the Rc in TMDs, paving the way for high-performance 2D nano-electronic devices., Comment: published in Nano Letters ASAP
- Published
- 2014
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