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We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors., Comment: 4 pages, 3 figures

The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge contributes strongly to the overall doping of the samples. Furthermore the edge disorder can be found as the main limiting source of the mobility for narrow samples.

Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements but also because of its novel applications in many fields in physics. Quantum control has been studied intensively in quantum optics but recently progress has been made in the control of solid-state qubits as well. In quantum transport only a few active and passive feedback experiments have been realized on the level of single-electrons, though theoretical proposals exist. Here we demonstrate the suppression of shot noise in a single-electron transistor, using an exclusively electronic closed-loop feedback to monitor and adjust the counting statistics. With increasing feedback response we observe a stronger suppression and faster freezing of charge current fluctuations. Our technique is analog to the generation of squeezed light with in-loop photodetection as used in quantum optics. Sub-Poisson single-electron sources will pave the way for high precision measurements in quantum transport similar to its optical or opto-mechanical equivalent.

We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional explanation of the effect in terms of the classical random resistor network model. We show that experimental results qualitatively agree with a phenomenological two-fluid model taking into account electron-hole recombination and finite-size sample geometry.

We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high quality GaAs/AlGaAs heterostructures. Several materials were grown this way with different densities of Si atoms. At low temperature the mobility decreases monotonically with increasing impurity density. In materials with incorporated impurities, effects are observed with increasing temperatures. On the one hand, a minimum in mobility appears, marking a transition between scattering enhancement due to acoustic phonon and mobility enhancement due to impurity driven conductivity. The temperature at which the transition takes place decreases with increasing impurity density. On the other hand, the incorporated impurities induce a non-monotonic temperature dependence of the electron density. The magnitude of this variation rises with increasing impurity density. The theory of electron-electron interaction correction to the conductivity alone fails to explain our results., Comment: 6 pages, 5 figures

We report on a Kondo correlated quantum dot connected to two-dimensional leads where we demonstrate the renormalization of the g-factor in the pure Zeeman case i.e, for magnetic fields parallel to the plane of the quantum dot. For the same system we study the influence of orbital effects by investigating the quantum Hall regime i.e. a perpendicular magnetic field is applied. In this case an unusual behaviour of the suppression of the Kondo effect and of the split zero-bias anomaly is observed. The splitting decreases with magnetic field and shows discontinuous changes which are attributed to the intricate interplay between Kondo screening and the quantum Hall edge structure originating from electrostatic screening. This edge structure made up of compressible and incompressible stripes strongly affects the Kondo temperature of the quantum dot and thereby influences the renormalized g-factor.

We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior is observed in one sample which has the characteristic sub-linear conductivity signaling on the presence of short-range disorder in this sample. No square root MR was observed in other samples where short-range scattering is inessential as it is evident from the gate voltage dependences of their conductivities. Comparing our experimental data for the sample with theoretical calculations we found a good qualitative agreement and established the conditions which should be fulfilled in graphene to observe the SRMR experimentally.

Electronic transport through a two-path triple-quantum-dot system with two source leads and one drain is studied. By separating the conductance of the two double dot paths, we are able to observe double dot and triple dot physics in transport and study the interaction between the paths. We observe channel blockade as a result of inter-channel Coulomb interaction. The experimental results are understood with the help of a theoretical model which calculates the parameters of the system, the stability regions of each state and the full dynamical transport in the triple dot resonances., Comment: 6 pages, 6 figures

In high-mobility two-dimensional electron gases Landau levels are already formed at very small magnetic field values. Such two-dimensional electron gases show a huge negative magnetoresistance at low temperatures and an unexpected and very strong non-linear behavior with the applied current. This non-linearity depends on carrier concentration and is explained by the subtle interplay of elastic scattering within Landau levels and in between Landau levels.

We observe a strong negative magnetoresistance at non-quantizing magnetic fields in a high-mobility two-dimensional electron gas (2DEG). This strong negative magnetoresistance consists of a narrow peak around zero magnetic field and a huge magnetoresistance at larger fields. The peak shows parabolic magnetic field dependence and is attributed to the interplay of smooth disorder and rare strong scatterers. We identify the rare strong scatterers as macroscopic defects in the material and determine their density from the peak curvature., Comment: 5 pages, 4 figures

An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities while mobilities stay in the order of 10000 cm^2/(Vs). With a global backgate, the system is tuned from a unipolar n-n' or p-p' junction with different densities to a bipolar p-n junction. Magnetotransport across this junction verifies its nature, showing the expected quantized resistance values as well as the switching with the polarity of the magnetic field. The mixing of edge states at the p-n junction is shown to be supressed at high magnetic fields., Comment: 4 pages, 3 figures

Aharonov-Bohm oscillations are observed in a graphene quantum ring with a top gate covering one arm of the ring. As graphene is a gapless semiconductor this geometry allows to study not only the quantum interference of electrons with electrons or holes with holes but also the unique situation of quantum interference between electrons and holes. The period and amplitude of the observed Aharonov-Bohm oscillations are independent of the sign of the applied gate voltage showing the equivalence between unipolar and dipolar interference., Comment: 4 pages, 3 figures

Studies of non-equilibrium current fluctuations enable assessing correlations involved in quantum transport through nanoscale conductors. They provide additional information to the mean current on charge statistics and the presence of coherence, dissipation, disorder, or entanglement. Shot noise, being a temporal integral of the current autocorrelation function, reveals dynamical information. In particular, it detects presence of non-Markovian dynamics, i.e., memory, within open systems, which has been subject of many current theoretical studies. We report on low-temperature shot noise measurements of electronic transport through InAs quantum dots in the Fermi-edge singularity regime and show that it exhibits strong memory effects caused by quantum correlations between the dot and fermionic reservoirs. Our work, apart from addressing noise in archetypical strongly correlated system of prime interest, discloses generic quantum dynamical mechanism occurring at interacting resonant Fermi edges., Comment: 6 pages, 3 figures

In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes for increasing the temperature. An additional density dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction., Comment: 4 pages, 4 figures

The electronic states of lateral many electron quantum dots in high magnetic fields are analyzed in terms of energy and spin. In a regime with two Landau levels in the dot, several Coulomb blockade peaks are measured. A zig-zag pattern is found as it is known from the Fock-Darwin spectrum. However, only data from Landau level 0 show the typical spin-induced bimodality, whereas features from Landau level 1 cannot be explained with the Fock-Darwin picture. Instead, by including the interaction effects within spin-density-functional theory a good agreement between experiment and theory is obtained. The absence of bimodality on Landau level 1 is found to be due to strong spin polarization., Comment: 4 pages, 5 figures

Folded single layer graphene forms a system of two decoupled monolayers being only a few Angstroms apart. Using magnetotransport measurements we investigate the electronic properties of the two layers conducting in parallel. We show a method to obtain the mobilities for the individual layers despite them being jointly contacted. The mobilities in the upper layer are significantly larger than in the bottom one indicating weaker substrate influence. This is confirmed by larger transport and quantum scattering times in the top layer. Analyzing the temperature dependence of the Shubnikov-de Haas oscillations effective masses and corresponding Fermi velocities are obtained yielding reduced values down to 66 percent in comparison to monolayers., Comment: 4 pages, 5 figures

We present the full three dimensionality of an electrostatically calculated stability diagram for triple quantum dots. The stability diagram maps out the favored charge configuration of the system as a function of potential shifts due to gate voltages. For triple dots only a three dimensional visualization allows for the complete identification of all its components. Those are most notably the so called quadruple points where four electronic configurations are degenerate, and quantum cellular automata (QCA) processes. The exact positions of these features within the stability diagram are now revealed. Furthermore the influence on transport is studied by comparing the model with a two path triple quantum dot made with local anodic oxidation. The two path setup allows to study the influence of the dots arrangement., Comment: 11 pages, 5 figures

Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-acoustic phonon coupling by the deformation potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton-acoustic phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers., Comment: 4 pages, 4 figures

The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nano-meter scale separation between them., Comment: 4 Pages, 4 Fugures

We performed charge detection on a lateral triple quantum dot with star-like geometry. The setup allows us to interpret the results in terms of two double dots with one common dot. One double dot features weak tunnel coupling and can be understood with atom-like electronic states, the other one is strongly coupled forming molecule-like states. In nonlinear measurements we identified patterns that can be analyzed in terms of the symmetry of tunneling rates. Those patterns strongly depend on the strength of interdot tunnel coupling and are completely different for atomic- or molecule-like coupled quantum dots allowing the non-invasive detection of molecular bonds., Comment: 4 pages, 4 figures

An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining a narrow trench. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed. Two theoretical approaches are presented to approximate the measured resistance., Comment: 5 pages, 4 figures

An atomic force microscope is used to structure a film of multilayer graphene. The resistance of the sample was measured in-situ during nanomachining narrow trenches. We found a reversible behavior in the electrical resistance which we attribute to the movement of dislocations. After several attempts also permanent changes are observed.

We present an advanced lateral triple quantum dot made by local anodic oxidation. Three dots are coupled in a starlike geometry with one lead attached to each dot thus allowing for multiple path transport measurements with two dots per path. In addition charge detection is implemented using a quantum point contact. Both in charge measurements as well as in transport we observe clear signatures of states from each dot. Resonances of two dots can be established allowing for serial transport via the corresponding path. Quadruple points with all three dots in resonance are prepared for different electron numbers and analyzed concerning the interplay of the simultaneously measured transport along both paths., Comment: 4 pages, 4 figures

We show that the intriguing observation of noise enhancement in the charge transport through two vertically coupled quantum dots can be explained by the interplay of quantum coherence and strong Coulomb blockade. We demonstrate that this novel mechanism for super-Poissonian charge transfer is very sensitive to decoherence caused by electron-phonon scattering as inferred from the measured temperature dependence., Comment: 4 pages, 3 figures, corrected version (Figs.2 and 3)

We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For certain configurations we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts we relate this to a slow switching between different electron configurations on the quantum dot.

We present noise measurements of self-assembled InAs quantum dots at high magnetic fields. In comparison to I-V characteristics at zero magnetic field we notice a strong current overshoot which is due to a Fermi-edge singularity. We observe an enhanced suppression in the shot noise power simultaneous to the current overshoot which is attributed to the electron-electron interaction in the Fermi-edge singularity.

Using a time-resolved phonon absorption technique, we have measured the specific heat of a two-dimensional electron system in the fractional quantum Hall effect regime. For filling factors $\nu = 5/3, 4/3, 2/3, 3/5, 4/7, 2/5$ and 1/3 the specific heat displays a strong exponential temperature dependence in agreement with excitations across a quasi-particle gap. At filling factor $\nu = 1/2$ we were able to measure the specific heat of a composite fermion system for the first time. The observed linear temperature dependence on temperature down to $T = 0.14$ K agrees well with early predictions for a Fermi liquid of composite fermions., Comment: 4 pages, 4 figures (version is 1. resubmission: Added a paragraph to include the problems which arise by the weak temperature dependence at \nu = 1/2, updated affiliation)

Single electron tunneling is studied in a many electron quantum dot in high magnetic fields. For such a system multiple transitions of the spin configuration are theoretically predicted. With a combination of spin blockade and Kondo effect we are able to detect five regions with different spin configurations. Transitions are induced with changing electron numbers., Comment: 4 pages, 5 figures

We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots.

The dependence of the activated gap on magnetic field is studied for the fractional filling factor~1/3. By comparing the experimental results with results from exact diagonalization calculations we are able to identify the excitation of a small antiskyrmion in the low-field regime and a cross-over to spinless excitations at higher magnetic fields. The effect of sample quality is studied. On the side of the theory, comparison between different geometries (torus and sphere) and different sizes is carried out. Under inclusion of Landau level mixing and finite thickness, we obtain a good agreement between calculated energies and experimental results., Comment: submitted to PRB

Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman splitting of the acceptor levels. In an in-plane field, on the other hand, the Zeeman splitting is strongly suppressed. This anisotropic Zeeman splitting is shown to be a consequence of the huge light hole-heavy hole splitting caused by a large biaxial strain and a strong quantum confinement in the Ge quantum well., Comment: 5 figures, 4 pages

We investigate Kondo effect and spin blockade observed on a many-electron quantum dot and study the magnetic field dependence. At lower fields a pronounced Kondo effect is found which is replaced by spin blockade at higher fields. In an intermediate regime both effects are visible. We make use of this combined effect to gain information about the internal spin configuration of our quantum dot. We find that the data cannot be explained assuming regular filling of electronic orbitals. Instead spin polarized filling seems to be probable., Comment: 4 pages, 5 figures

The activation gap Delta of the fractional quantum Hall state at constant filling n =1/3 is measured in wide range of perpendicular magnetic field B. Despite the full spin polarization of the incompressible ground state, we observe a sharp crossover between a low-field linear dependence of Delta on B associated to spin texture excitations and a Coulomb-like behavior at large B. From the global gap-reduction we get information about the mobility edges in the fractional quantum Hall regime., Comment: 4 pages, 3 figures

With non-invasive methods, we investigate ground and excited states of a lateral quantum dot. Charge detection via a quantum point contact is used to map the dot dynamics in a regime where the current through the dot is too low for transport measurements. In this way we investigate and compare the tunneling rates from the dot to source and drain. We find a symmetry line on which the tunneling rates to both leads are equal. In this situation ground states as well as excited states influence the mean charge of the dot. A detailed study in this regime reveals that the coupling symmetry depends on the number of states contributing to transport and on the spatial distribution of individual states., Comment: 4 pages, 4 figures

Experimental results for sequential transport through a lateral quantum dot in the regime of spin blockade induced by spin dependent tunneling are compared with theoretical results obtained by solving a master equation for independent electrons. Orbital and spin effects in electron tunneling in the presence of a perpendicular magnetic field are identified and discussed in terms of the Fock-Darwin spectrum with spin. In the nonlinear regime, a regular pattern of negative differential conductances is observed. Electrical asymmetries in tunnel rates and capacitances must be introduced in order to account for the experimental findings. Fast relaxation of the excited states in the quantum dot have to be assumed, in order to explain the absence of certain structures in the transport spectra., Comment: 4 pages, 4 figures

Single-electron tunneling through a zero-dimensional state in an asymmetric double-barrier resonant-tunneling structure is studied. The broadening of steps in the $I$--$V$ characteristics is found to strongly depend on the polarity of the applied bias voltage. Based on a qualitative picture for the finite-life-time broadening of the quantum dot states and a quantitative comparison of the experimental data with a non-equilibrium transport theory, we identify this polarity dependence as a clear signature of Coulomb interaction., Comment: 4 pages, 4 figures

We observe the noise spectrum of electron spins in bulk GaAs by Faraday rotation noise spectroscopy. The experimental technique enables the undisturbed measurement of the electron spin dynamics in semiconductors. We measure exemplarily the electron spin relaxation time and the electron Lande g-factor in n-doped GaAs at low temperatures and find good agreement of the measured noise spectrum with an unpretentious theory based on Poisson distribution probability., Comment: 4 pages, 4 figures

We demonstrate electron redistribution caused by magnetic field on a single quantum dot measured by means of a quantum point contact as non-invasive detector. Our device which is fabricated by local anodic oxidation allows to control independently the quantum point contact and all tunnelling barriers of the quantum dot. Thus we are able to measure both the change of the quantum dot charge and also changes of the electron configuration at constant number of electrons on the quantum dot. We use these features to exploit the quantum dot in a high magnetic field where transport through the quantum dot displays the effects of Landau shells and spin blockade. We confirm the internal rearrangement of electrons as function of the magnetic field for a fixed number of electrons on the quantum dot., Comment: 4 pages, 5 figures

In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin orbit coupling is equivalent to an effective magnetic field B_so which has the opposite sign for s_z=1/2 spin electrons. When the external magnetic field is perpendicular to the planar structure, the field B_so generates an additional splitting for electron states as compared to the spin splitting in the in-plane field orientation. The anisotropy of spin splitting has been measured and then analyzed in terms of spin-orbit coupling in several AlGaAs/GaAs quantum dots by means of resonanat tunneling spectroscopy. From the measured values and sign of the anisotropy we are able to determine the dominating spin-orbit coupling mechanism.

We study the propagation of edge magnetoplasmons by time-resolved current measurements in a sample which allows for selective detection of edge states in the quantum Hall regime. We observe two decoupled modes of edge and inter-edge magnetoplasmons at filling factors close to 3. From the analysis of the propagation velocities of each mode the internal spatial parameters of the edge structure are derived., Comment: 4 pages, 4 figures, submitted

We have studied the single-electron transport spectrum of a quantum dot in GaAs/AlGaAs resonant tunneling device. The measured spectrum has irregularities indicating a broken circular symmetry. We model the system with an external potential consisting of a parabolic confinement and a negatively charged Coulombic impurity placed in the vicinity of the quantum dot. The model leads to a good agreement between the calculated single-electron eigenenergies and the experimental spectrum. Furthermore, we use the spin-density-functional theory to study the energies and angular momenta when the system contains many interacting electrons. In the high magnetic field regime the increasing electron number is shown to reduce the distortion induced by the impurity., Comment: 6 pages, 8 figures, submitted to PRB

We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as function of bias voltage. Both effects can be linked to the scanning of the 3-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach.

Phonon excitations of fractional quantum Hall states at filling factors nu = 1/3, 2/5, 4/7, 3/5, 4/3, and 5/3 are experimentally shown to be based on Landau level transitions of Composite Fermions. At filling factor nu = 2/3, however, a linear field dependence of the excitation energy in the high-field regime rather hints towards a spin transition excited by the phonons. We propose to explain this surprising observation by an only partially polarized 2/3-ground-state making the energetically lower lying spin transition also allowed for phonon excitations., Comment: 4 pages, 3 figures, 1 table, accepted for Phys. Rev. Lett

We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observed super-Poissonian shot noise up to values of the Fano factor $\alpha \approx 10$., Comment: 4 pages, 4 figures, accepted for Phys. Rev. B

We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and tunnel coupling. In the regime of capacitive coupling we observe the phenomenon of spin blockade in a magnetic field and analyze the influence of capacitive interdot coupling on this effect., Comment: 4 pages, 3 figures

The activation gap $\Delta$ of the fractional quantum Hall states at constant fillings $\nu =2/3$ and 2/5 has been measured as a function of the perpendicular magnetic field $B$. A linear dependence of $\Delta$ on $B$ is observed while approaching the spin polarization transition. This feature allows a direct measurement of the $g$-factor of composite fermions which appears to be heavily renormalized by interactions and strongly sensitive to the electronic filling factor., Comment: 4 pages, 4 figures Changed content: Fokus more on g-factors (and less on other details)