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Thermodynamics shows that the open-circuit voltage (V o c) of a solar cell is dependent on the external radiative efficiency at V o c . In planar solar cells with low photon recycling probability, this efficiency is limited to 2% due to total internal reflection of the emitted light, providing a penalty of 101 mV to the V o c . Tapered nanowire solar cells allow for an adiabatic expansion of the guided optical mode into air, allowing to reduce this loss. For this purpose, we first perform simulations of the photon escape probability in tapered nanowires with both finite difference time domain simulations as well as with rigorous coupled-wave analysis, showing photon escape probabilities up to 47.2% for normally tapered nanowires and up to 92% for inversely tapered nanowires. We subsequently show that by fine tuning the recipe for reactive ion etching of the tapered InP nanowires, we can decrease the nanowire tapering angle from 4.5° down to 1.8°, allowing to significantly increase the measured external radiative efficiency. We finally observe an open-circuit voltage of 0.746 V at a tapering angle of 2.46°. [ABSTRACT FROM AUTHOR]

We investigate microlenses that selectively focus the light on only a small fraction of all nanowires within an arrayed InP nanowire solar cell. The nano-concentration improves both the short-circuit current (J s c ) and the open-circuit voltage (V o c ) of the solar cell. For this purpose, polymethyl methacrylate microlenses with 6 μm diameter were randomly positioned on top of an arrayed nanowire solar cell with 500 nm pitch. The microlenses were fabricated by first patterning cylindrical micropillars, which were subsequently shaped as lenses by using a thermal reflow process. The quality of the microlenses was experimentally assessed by Fourier microscopy showing strong collimation of the emitted photoluminescence. By analyzing the slope of the integrated photoluminescence vs excitation density, we deduce a substantial enhancement of the external radiative efficiency of a nanowire array by adding microlenses. The enhanced radiative efficiency of the lensed nanowire array results in a clear enhancement of the open-circuit voltage for a subset of our solar cells. The microlenses finally also allow to increase the short-circuit current of our relatively short nanowires, providing a route to significantly reduce the amount of expensive semiconductor material. [ABSTRACT FROM AUTHOR]

We present polarized emission from single hexagonal silicon–germanium (hex-SiGe) nanowires. To understand the nature of the band-to-band emission of hex-SiGe, we have performed photoluminescence spectroscopy to investigate the polarization properties of hex-SiGe core–shell nanowires. We observe a degree of polarization of 0.2 to 0.32 perpendicular to the nanowire c-axis. Finite-difference time-domain simulations were performed to investigate the influence of the dielectric contrast of nanowire structures. We find that the dielectric contrast significantly reduces the observable degree of polarization. Taking into account this reduction, the experimental data are in good agreement with polarized dipole emission perpendicular to the c-axis, as expected for the fundamental band-to-band transition, the lowest energy direct band-to-band transition in the hex-SiGe band structure. [ABSTRACT FROM AUTHOR]

Monolithic integration of silicon-based electronics and photonics could open the door toward many opportunities including on-chip optical data communication and large-scale application of light-based sensing devices in healthcare and automotive; by some, it is considered the Holy Grail of silicon photonics. The monolithic integration is, however, severely hampered by the inability of Si to efficiently emit light. Recently, important progress has been made by the demonstration of efficient light emission from direct-bandgap hexagonal SiGe (hex-SiGe) alloy nanowires. For this promising material, realized by employing a nanowire structure, many challenges and open questions remain before a large-scale application can be realized. Considering that for other direct-bandgap materials like GaAs, surface recombination can be a true bottleneck, one of the open questions is the importance of surface recombination for the photoluminescence efficiency of this new material. In this work, temperature-dependent photoluminescence measurements were performed on both hex-Ge and hex-SiGe nanowires with and without surface passivation schemes that have been well documented and proven effective on cubic silicon and germanium to elucidate whether and to what extent the internal quantum efficiency (IQE) of the wires can be improved. Additionally, time-resolved photoluminescence (TRPL) measurements were performed on unpassivated hex-SiGe nanowires as a function of their diameter. The dependence of the surface recombination on the SiGe composition could, however, not be yet addressed given the sample-to-sample variations of the state-of-the-art hex-SiGe nanowires. With the aforementioned experiments, we demonstrate that at room temperature, under high excitation conditions (a few kW cm–2), the hex-(Si)Ge surface is most likely not a bottleneck for efficient radiative emission under relatively high excitation conditions. This is an important asset for future hex-(Si)Ge optoelectronic devices, specifically for nanolasers. [ABSTRACT FROM AUTHOR]

A lossless solar cell operating at the Shockley–Queisser limit generates an open circuit voltage (Voc) equal to the radiative limit. At Voc, the highly directional beam of photons from the sun is absorbed and subsequently externally re‐emitted into a 4π solid angle, providing a large photon entropy loss. A solar cell can beat the Shockley–Queisser limit and approach the 46.7% ultimate limit by decreasing the output solid angle of the light emission at open circuit conditions. Here, a design for an indium phosphide single nanowire solar cell capable to operate 159 mV above the radiative limit is presented. The spontaneous emission factor is first optimized into a guided mode of the nanowire toward 68%. The authors subsequently launch a guided mode at the bottom straight part of the tapered nanowire yielding a photon escape probability of 81% for a tapering angle of θ = 1.2° and a top facet with a radius of 83 nm. When assuming homogeneous light emission along the nanowire, an outcoupling efficiency of 42% of the emitted light is obtained. The final optimization is the reduction of the emission cone toward 11 × 10−3 sr by focusing the guided mode with an external lens. [ABSTRACT FROM AUTHOR]

The solar energy conversion efficiency of photoelectrochemical (PEC) devices is usually limited by poor interface energetics, limiting the onset potential, and light reflection losses. Here, a three-pronged approach to obtain excellent performance of an InP-based photoelectrode for water reduction is presented. First, a buried p-n+ junction is fabricated, which shifts the valence band edge favorably with respect to the hydrogen redox potential. Photoelectron spectroscopy substantiates that the shift of the surface photovoltage is mainly determined by the buried junction. Second, a periodic array of InP nanopillars is created at the surface of the photoelectrode to substantially reduce the optical reflection losses. This device displays an unprecedented photocathodic power-saved efficiency of 15.8% for single junction water reduction. Third, a thin TiO2 protection layer significantly increases the stability of the InP-based photoelectrode. Careful design of the interface energetics based on surface photovoltage spectroscopy allows obtaining a PEC cell with stable record performance in water reduction. [ABSTRACT FROM AUTHOR]

Highly oriented Ge 0.81 Sn 0.19 nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor-liquid-solid mechanism. In this process, liquid metallic Sn seeds enable the anisotropic crystal growth and act as a sole source of Sn for the formation of the metastable Ge 1- x Sn x semiconductor material. The strain relaxation for a lattice mismatch of ε = 2.94% between the Ge (111) substrate and the constant Ge 0.81 Sn 0.19 composition of nanowires is confined to a transition zone of <100 nm. In contrast, Ge 1- x Sn x structures with diameters in the micrometer range show a 5-fold longer compositional gradient very similar to epitaxial thin-film growth. Effects of the Sn growth promoters' dimensions on the morphological and compositional evolution of Ge 1- x Sn x are described. The temperature- and laser power-dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge 0.81 Sn 0.19 ( e . g ., band gap of 0.3 eV at room temperature). These materials  hold promise in applications such as thermal imaging and photodetection as well as building blocks for group IV-based mid- to near-IR photonics.