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Mn4+‐activated red‐light fluorides are widely used in high‐quality displays, due to the narrow‐spectral emission. However, achieving exceptional chromaticity coordinates and appropriate quantum efficiency (QE) at the same time is a great challenge. Herein, a Li substitution strategy is proposed for enhancing QE and improving the thermal stability of red‐light Mn4+‐activated Cs2NaGaF6 (CNGF). The external quantum efficiency (EQE) of optimal Cs2NaGaF6: Mn4+, Li+ (CNGF: Mn4+, Li+) is improved from 15.79% to 33.61% and thermal stability increases from 68.4% to 85.5% (intensity at 150 °C relative to room temperature). EQE enhancement mechanism on the strategy is explored that Li substitution increases the local structural distortion of Mn4+ for relieving the parity forbidden, and promotes Mn4+ doping in the host lattice, which provides new insights for improving the QE of Mn4+ non‐equivalent doped fluorides. Moreover, with exceptional chromaticity coordinates of (0.7029, 0.2970), optimal sample CNGF: 4.8 mol% Mn4+,0.9 mol% Li+ can be used to fabricate white light‐emitting diode (w‐LED) backlight, which obtains wide color gamut of 110.68% National Television Standards Committee (NTSC) and high luminous efficacy of 110.57 lm W−1, indicating that CNGF: Mn4+, Li+ is a promising candidate for the next generation of wide gamut and efficient displays. [ABSTRACT FROM AUTHOR]

Broadband near‐infrared (NIR) emission phosphors are crucial for the construction of next‐generation smart lighting sources; however, the thermal quenching (TQ) issue poses a significant challenge to their applications. In this study, anti‐TQ NIR emission is demonstrated in hexafluoride phosphors, using a facile Cr3+/Fe3+ co‐doping strategy. Owing to the controlled forward resonance energy transfer (ET) from Cr3+ to Fe3+ and one‐phonon‐assisted back ET from Fe3+ to Cr3+, the thermally enhanced broadband NIR luminescence is realised in series of fluoride such as Na3FeF6:Cr3+, Na3GaF6:Cr3+, Fe3+, K2NaScF6:Cr3+, Fe3+, etc. By varying the chemical composition of the phosphor, the anti‐TQ emission is achieved even upon raising the temperature to ≈423 K. The anti‐TQ luminescence mechanism is investigated, and the ET offset effect on luminescence TQ is demonstrated. More importantly, by combining these phosphors with blue InGaN chip, anti‐/zero‐TQ NIR light emitting diodes with a high photoelectric conversion efficiency even up to 19.13%@20 mA are further fabricated to realize the emerging coded optical wireless‐communication applications. These findings can initiate the exploration of NIR phosphors with anti‐TQ luminescence properties for advanced optoelectronic applications. [ABSTRACT FROM AUTHOR]

Broadband short-wave near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) have been attracting keen interest for miniature NIR spectroscopy, while still lacking sufficient novel broadband NIR-emitting phosphors. Herein, we report a novel MgNb2O6:Cr3+ polycrystalline phosphor with a broad NIR emission band centered at 970 nm and a large full-width at half-maximum of approximately 155 nm under excitation of bluish-green light at around 515 nm. The optimized phosphor MgNb2O6:1%Cr3+ features a high internal quantum efficiency (IQE) of ∼85.5% and a moderate external QE of 25.2%. The fluorescence properties determined by two distorted hexa-coordination octahedral sites (i.e. [MgO6] and [NbO6]), low crystal field strength (Dq/B ∼ 1.65), and Cr3+-doping concentration were systematically investigated for comprehensive understanding of photophysical mechanisms. Besides, this broadband NIR phosphor MgNb2O6:Cr3+ exhibits a moderate thermal quenching of 21.4%@373 K for pc-LED application. An NIR pc-LED self-built by combining the optimal phosphor with a commercial cyan of ∼515 nm exhibits an NIR output power increase from 3.19 to 11.38 mW as the drive current is varied from 40 to 220 mA. With the help of this prototype pc-LED device, multiple applications were successfully performed to clearly recognize blood vessel distributions in the human finger, penetrate a plastic cap, and distinguish multi-color text. Undoubtedly, further development of such broadband short-wave NIR-emitting phosphors will make novel pc-LED devices for significant applications in biomedical imaging, nondestructive safety detection, intelligent identification, etc. [ABSTRACT FROM AUTHOR]

Broadband near‐infrared (NIR) phosphors have recently received considerable attention in spectroscopy technology fields, but designing inexpensive, emission peaks centered above 800 nm, and multimodal broadband NIR luminescence material still remains a great challenge. Here, by selecting stannate compound Mg2SnO4 (MSO) as the host, a kind of broadband NIR phosphor MSO:Cr3+ with multimode luminescence properties is reported. The designed material exhibits an emission peaking at 800 nm and a full‐width at half maximum of 180 nm (≈2730 cm−1). The site occupation of Cr3+ in MSO is unraveled by density functional theory calculation. The constructed NIR light‐emitting device based on MSO:Cr3+ displays a high NIR output power of 187.19 mW@100 mA and remarkable photoelectric efficiency of 13.67%, and its multifunctional applications in information encryption, non‐destructive detection, and so on are also demonstrated. Additionally, through defect site reconstruction, MSO:Cr3+ presents superior broadband NIR persistent luminescence (PersL) properties with PersL duration time longer than 50 h. This work provides a feasible strategy to develop intelligent optical material integrated with multimodal luminescence through low‐cost stannate compounds as the host toward versatile applications such as non‐destructive detection and bioimaging. [ABSTRACT FROM AUTHOR]

The discovery of highly efficient broadband near infrared (NIR) emission material is urgent and crucial for constructing NIR lighting sources and emerging applications. Herein, a series of NIR emission hexafluorides A2BMF6:Cr3+ (A = Na, K, Rb, Cs; B = Li, Na, K, Cs; M = Al, Ga, Sc, In) peaking at ≈733–801 nm with a full width at half maximum (FWHM) of ≈98–115 nm are synthesized by a general ammonium salt assisted synthesis strategy. Benefiting from the pre‐ammoniation of the trivalent metal sources, the Cr3+ can be more efficiently doped into the A2BMF6 and simultaneously prevent the generation of the competitive phase. Particularly, Na3ScF6:Cr3+ (λem = 774 nm, FWHM ≈ 108 nm) with optimal Cr3+‐doping concentration of 35.96% shows a high internal quantum efficiency of 91.5% and an external quantum efficiency of ≈40.82%. A lighting emitting diode (LED) device with a NIR output power of ≈291.05 mW at 100 mA driven current and high photoelectric conversion efficiency of 20.94% is fabricated. The general synthesis strategy opens up new avenues for the exploration of Cr3+‐doped high efficiency phosphors, and the as‐obtained record NIR output power demonstrates for NIR LED lighting sources applications. [ABSTRACT FROM AUTHOR]

The development of highly efficient and thermally stable broadband near‐infrared (NIR) luminescence materials is a great challenge to advance the next‐generation smart NIR light source. Benefitting from the low phonon energy and relatively weak electron phonon coupling effect of the fluoride, K2NaScF6:Cr3+ phosphor is designed and obtained, which demonstrates a full width at half maximum of 100 nm peaking at ≈765 nm. Upon blue light excitation, the phosphor exhibits a high quantum efficiency of 74% and its emission intensity at 150 °C can keep 89.6% of the initial value at 25 °C. An NIR output power of 159.72 mW (input electric power, 1094 mW) with a high photoelectric conversion efficiency of ≈14.60%, light‐emitting diode (LED) device is presented based on this K2NaScF6:Cr3+ phosphor. Furthermore, applying the high‐power NIR phosphor‐converted LED device as lighting source, clear and quick veins imaging and recognition in fingers, palm, wrist, and arm of the human hand are first realized, suggesting K2NaScF6:Cr3+ phosphor has high promise in practical applications. [ABSTRACT FROM AUTHOR]

The development of highly efficient and thermally stable broadband near‐infrared (NIR) luminescence materials is a great challenge to advance the next‐generation smart NIR light source. Benefitting from the low phonon energy and relatively weak electron phonon coupling effect of the fluoride, K2NaScF6:Cr3+ phosphor is designed and obtained, which demonstrates a full width at half maximum of 100 nm peaking at ≈765 nm. Upon blue light excitation, the phosphor exhibits a high quantum efficiency of 74% and its emission intensity at 150 °C can keep 89.6% of the initial value at 25 °C. An NIR output power of 159.72 mW (input electric power, 1094 mW) with a high photoelectric conversion efficiency of ≈14.60%, light‐emitting diode (LED) device is presented based on this K2NaScF6:Cr3+ phosphor. Furthermore, applying the high‐power NIR phosphor‐converted LED device as lighting source, clear and quick veins imaging and recognition in fingers, palm, wrist, and arm of the human hand are first realized, suggesting K2NaScF6:Cr3+ phosphor has high promise in practical applications. [ABSTRACT FROM AUTHOR]

Broadband short-wave near-infrared (NIR) phosphor-converted light-emitting diodes ( pc -LEDs) have been attracting keen interest for miniature NIR spectroscopy, while still lacking sufficient novel broadband NIR-emitting phosphors. Herein, we report a novel MgNb 2 O 6 :Cr 3+ polycrystalline phosphor with a broad NIR emission band centered at 970 nm and a large full-width at half-maximum of approximately 155 nm under excitation of bluish-green light at around 515 nm. The optimized phosphor MgNb 2 O 6 :1%Cr 3+ features a high internal quantum efficiency (IQE) of ∼85.5% and a moderate external QE of 25.2%. The fluorescence properties determined by two distorted hexa-coordination octahedral sites ( i.e. [MgO 6 ] and [NbO 6 ]), low crystal field strength ( D q / B ∼ 1.65), and Cr 3+ -doping concentration were systematically investigated for comprehensive understanding of photophysical mechanisms. Besides, this broadband NIR phosphor MgNb 2 O 6 :Cr 3+ exhibits a moderate thermal quenching of 21.4%@373 K for pc -LED application. An NIR pc -LED self-built by combining the optimal phosphor with a commercial cyan of ∼515 nm exhibits an NIR output power increase from 3.19 to 11.38 mW as the drive current is varied from 40 to 220 mA. With the help of this prototype pc -LED device, multiple applications were successfully performed to clearly recognize blood vessel distributions in the human finger, penetrate a plastic cap, and distinguish multi-color text. Undoubtedly, further development of such broadband short-wave NIR-emitting phosphors will make novel pc -LED devices for significant applications in biomedical imaging, nondestructive safety detection, intelligent identification, etc .

Highly efficient and stable broadband near-infrared (NIR) emission phosphors are crucial for the construction of next-generation smart lighting sources; however, the discovery of target phosphors remains a great challenge. Benefiting from the interstitial Li + occupancy-induced relatively large distorted octahedral environment for Cr 3+ and suppressed nonradiative relaxation of the emission centers, an NIR emission fluoride phosphor Na 3 GaF 6 :Cr 3+ ,Li + peaking at 758 nm with a high internal quantum efficiency of 95.8% and an external quantum efficiency of 38.3% is demonstrated. Moreover, it exhibits a good thermal stability (84.9%@150 °C of the integrated emission intensity at 25 °C) and excellent moisture resistance as well. A high-power light-emitting diode (LED) with a record watt-level NIR output (974.12 mW) and a photoelectric conversion efficiency of 20.9% is demonstrated by combining Na 3 GaF 6 :Cr 3+ ,Li + and a blue InGaN chip, and a special information encryption/decryption technology suitable for rapid and long-distance identification of machines is further presented based on this device. This study not only advances the development of efficient NIR emission phosphors for broadband NIR LEDs but also for NIR-related emerging applications and devices.