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Polymers play a crucial role in promoting the progress of high‐performance inverted perovskite solar cells (PSCs). However, few polymers have simultaneously achieved defect passivation and device encapsulation in PSCs. Herein, a telechelic silicone polymer (poly(dimethylsiloxane‐co‐methylsiloxane acrylate) [PDMA]) is introduced, which possesses crosslinking capability to enable structure regulation through a condensation reaction. By leveraging the advantages of the polymers before and after crosslinking, a synergistic strategy of defect healing and device encapsulation for PSCs is developed via the application of the targeted polymer. PDMA as additives anchors tightly at the grain boundaries (GBs) and bridges the perovskite grains, achieving defect passivation and GBs crosslinking, increasing the efficiency of inverted PSCs from 22.32% to 24.41%. Crosslinked PDMA (CPDMA) is used as an encapsulant to encapsulate the entire device, enabling non‐destructive encapsulation at room temperature and inhibiting perovskite degradation under photothermal aging. Remarkably, the PDMA‐modified device with CPDMA encapsulation maintains 98% of its initial efficiency after 1200 h under continuous illumination at 55 ± 5 °C and retains 95% of its original efficiency after 1000 h of damp heat testing, meeting one of the IEC61215:2016 standards. [ABSTRACT FROM AUTHOR]

All‐layer‐inorganic perovskite solar cells (PSCs) are prized for their remarkable thermal stability and low cost. However, "imperfect contact" at the perovskite heterojunction hinders charge transport and causes photochemical deterioration, restricting photovoltaic performance, and operational stability. Herein, an efficient perovskite/TiO2 heterojunction is constructed, produced by adding TiO2 to an antisolvent to concurrently form a CsPbI2Br perovskite layer and a top TiO2 electron transport layer in one step, which significantly improves the interfacial contact and thus facilitates charge transport at the heterojunction. The resultant inverted all‐layer‐inorganic PSCs exhibit a superior efficiency of 17.1%. Moreover, given the high‐quality perovskite/TiO2 heterojunction and low interface defects, the encapsulated PSCs retain 91% or 92% of their initial efficiency for 1000 h under maximum power point tracking or damp‐heat conditions (85 °C and 85% relative humidity), respectively. Surprisingly, the unencapsulated PSCs maintain an initial efficiency of 86% during aging, even at 200 °C for 200 h. [ABSTRACT FROM AUTHOR]

Lead halide perovskite‐based X‐ray detectors show very promising sensitivity and low detection limit, which can be used for next‐generation, room‐temperature radiation detections. It is interesting to find that the diode‐structured X‐ray detector shows very high photocurrent gain under small reversed bias voltage, which is unusual and should be investigated and understood for better device design. In this regard, a lead halide perovskite‐based X‐ray detector with the p–i–n structure is fabricated and studied. The p–i–n structured device shows abnormal and excellent photoconductor properties with high photocurrent gain factor under reverse bias. Further device simulation reveals that the ion migration and accumulation in the perovskite material are responsible for the large band‐bending at the interface, which may induce charge tunneling to reduce the contact resistance and causes the reverse‐biased device to work as a photoconductor rather than a photodiode. This finding provides a new approach to the understanding and design of high‐performance X‐ray detectors utilizing ionic semiconductors like lead halide perovskites. [ABSTRACT FROM AUTHOR]

[4-(3,6-dimethyl-9H-carbazol-9yl)butyl]phosphonic acid (Me-4PACz) self-assembled molecules (SAM) are an effective method to solve the problem of the buried interface of NiO x in inverted perovskite solar cells (PSCs). However, the Me-4PACz end group (carbazole core) cannot forcefully passivate defects at the bottom of the perovskite film. Here, a Co-SAM strategy is employed to modify the buried interface of PSCs. Me-4PACz is doped with phosphorylcholine chloride (PC) to form a Co-SAM to improve the monolayer coverage and reduce leakage current. The phosphate group and chloride ions (Cl - ) in PC can inhibit NiO x surface defects. Meantime, the quaternary ammonium ions and Cl - in PC can fill organic cations and halogen vacancies in the perovskite film to enable defects passivation. Moreover, Co-SAM can promote the growth of perovskite crystals, collaboratively solve the problem of buried defects, suppress nonradiative recombination, accelerate carrier transmission, and relieve the residual stress of the perovskite film. Consequently, the Co-SAM modified devices show power conversion efficiencies as high as 25.09% as well as excellent device stability with 93% initial efficiency after 1000 h of operation under one-sun illumination. This work demonstrates the novel approach for enhancing the performance and stability of PSCs by modifying Co-SAM on NiO x ., (© 2024 Wiley‐VCH GmbH.)